MMBT2222AT NPN Epitaxial Silicon Transistor Features C * General purpose amplifier transistor. E * Ultra-Small Surface Mount Package for all types. B * General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings Symbol Ta = 25C unless otherwise noted Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA TJ Junction Temperature 150 C TSTG Storage Temperature Range -55 ~ 150 C * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* T =25C unless otherwise noted a Symbol Parameter Max Unit PC Collector Power Dissipation, by RJA 250 mW RJA Thermal Resistance, Junction to Ambient 500 C/W * Minimum land pad. Electrical Characteristics* Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 10A, IE = 0 75 V BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 6 ICEX Collector Cut-off Current VCE = 60V, VEB(OFF) = 3V hFE DC Current Gain VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 150mA VCE (sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VBE (sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.6 fT Current Gain Bandwidth Product VCE = 20V, IC = 20mA, f = 100MHz 300 Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8 pF Cib Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 30 pF td Delay Time 10 ns tr Rise Time VCC = 30V, IC = 150mA IB1 =- IB2 = 15mA 25 ns ts Storage Time 225 ns tf Fall Time 60 ns V 10 nA 0.3 1.0 V V 1.2 2.0 V V 35 50 75 100 MHz * DC Item are tested by Pulse Test : Pulse Width300us, Duty Cycle2% (c) 2007 Fairchild Semiconductor Corporation MMBT2222AT Rev. 1.0.0 www.fairchildsemi.com 1 MMBT2222AT -- NPN Epitaxial Silicon Transistor September 2008 Figure 1. DC Current Gain Figure 2. DC Current Gain Vce=5V Vce=10V o T J=125 C o T J=75 C o o TJ=125 C Current Gain Current Gain T J=25 C o T J=-25 C 100 o TJ=75 C o TJ=25 C o TJ=-25 C 100 10 1 10 100 1000 1 Collector Current, [mA] 10 100 1000 Collector Current, [mA] Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation voltage 1000 Ic=10*Ib Ic=10*Ib o o Base- Emitter Voltage,[mV] Collector-Emitter Voltage,[mV] o T J=125 C o T J=75 C o T J=25 C 100 o T J=-25 C 10 10 TJ=25 C 1000 o TJ=75 C o TJ=125 C 100 100 10 Collector Current, [mA] Base- Collector Juntion Capacitance, Cob[pF] Base-Collector Leakage Current,[nA] Figure 6. Collector-Base Capapcitance 1000 o TJ=125 C 100 o TJ=75 C o TJ=25 C 10 o TJ=-25 C 20 30 40 50 60 70 15 f=1mhz 13 10 8 5 0 5 10 Base- Collector Reverse Voltage, Vcb[V] Base-Collector Revere Voltage, [V] (c) 2007 Fairchild Semiconductor Corporation MMBT2222AT Rev. 1.0.0 100 Collector Current, [mA] Figure 5. Collector- Base Leakage Current 1 10 TJ=-25 C www.fairchildsemi.com 2 MMBT2222AT -- NPN Epitaxial Silicon Transistor Typical Performance Characteristics MMBT2222AT -- NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure 7. Power Derating 300 Power Dissipation, [mW] 250 200 150 100 50 0 0 25 50 75 100 125 150 o Ambient Temperature, T a[ C] (c) 2007 Fairchild Semiconductor Corporation MMBT2222AT Rev. 1.0.0 www.fairchildsemi.com 3 MMBT2222AT -- NPN Epitaxial Silicon Transistor Package Dimensions SOT-523F * Case : SOT-523F * Case Material(Molded Plastic): KTMC1060SC * UL Flammability classification rating : "V0" * Moisture Sensitivity level per JESD22-A1113B : MSL 1 * Lead terminals solderable per MIL-STD7502026 /JESD22A121 * Lead Free Plating : Pure Tin(Matte) Dimensions in Millimeters (c) 2007 Fairchild Semiconductor Corporation MMBT2222AT Rev. 1.0.0 www.fairchildsemi.com 4 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM (R) PDP-SPMTM Power220(R) SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 (c) 2007 Fairchild Semiconductor Corporation MMBT2222AT Rev. 1.0.0 www.fairchildsemi.com 5 MMBT2222AT NPN Epitaxial Silicon Transistor TRADEMARKS