SGB30N60 Fast IGBT in NPT-technology C * 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability G E PG-TO-263-3-2 (D-PAK) (TO-263AB) * Qualified according to JEDEC1 for target applications * Pb-free lead plating; RoHS compliant * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGB30N60 VCE IC VCE(sat) Tj Marking Package 600V 30A 2.5V 150C G30N60 PG-TO-263-3-2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current IC Value 600 Unit V A TC = 25C 41 TC = 100C 30 Pulsed collector current, tp limited by Tjmax ICpuls 112 Turn off safe operating area - 112 Gate-emitter voltage VGE 20 V Avalanche energy, single pulse EAS 165 mJ tSC 10 s Ptot 250 W -55...+150 C VCE 600V, Tj 150C IC = 30 A, VCC = 50 V, RGE = 25 , start at Tj = 25C Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Tj , Tstg Soldering temperature (reflow soldering, MSL1) 1 2 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.3 05.03.2009 SGB30N60 Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.5 K/W RthJA 40 Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient 1) Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - 1.7 2.1 2.4 T j = 150 C - 2.5 3.0 3 4 5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =500 A Collector-emitter saturation voltage VCE(sat) V V G E = 15 V, I C =30A T j = 25C Gate-emitter threshold voltage VGE(th) I C =700 A,V C E =V G E Zero gate voltage collector current ICES V C E = 60 0 V,V G E = 0 V A T j = 25C - - 40 T j = 150 C - - 3000 Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 100 nA Transconductance gfs V C E =20V, I C =30A - 20 - S Input capacitance Ciss V C E =25V, - 1600 1920 pF Output capacitance Coss VGE=0V, - 150 180 Reverse transfer capacitance Crss f=1MHz - 92 110 Gate charge QGate V C C = 48 0 V, I C =30A - 140 182 nC - 7 - nH - 300 - A Dynamic Characteristic V G E =15V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current2) IC(SC) V G E =15V,t S C 1 0 s V C C 60 0V, T j 150 C 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.3 05.03.2009 SGB30N60 Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. typ. max. - 44 53 - 34 40 - 291 349 - 58 70 - 0.64 0.77 - 0.65 0.85 - 1.29 1.62 Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 25C , V C C = 40 0 V, I C =30A, V G E = 0 /1 5 V, R G = 11 , L 1 ) =1 80nH , C 1 ) =9 00p F Energy losses include "tail" and diode reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=150 C Parameter Symbol Conditions Value min. typ. max. - 44 53 - 34 40 - 324 389 - 67 80 - 0.98 1.18 - 0.92 1.19 - 1.90 2.38 Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) T j = 150 C V C C = 40 0 V, I C =30A, V G E = 0 /1 5 V, R G = 1 1 , L 1 ) =1 80nH , C 1 ) =9 00p F Energy losses include "tail" and diode reverse recovery. ns mJ Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.3 05.03.2009 SGB30N60 160A Ic 140A tp=4s 100A 15s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A 100A 80A TC=80C 60A TC=110C 40A 20A 0A 10Hz 50s 10A 200s 1ms 1A Ic DC 0.1A 100Hz 1kHz 10kHz 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 11) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 300W 60A 250W 50A IC, COLLECTOR CURRENT 200W 150W 100W Ptot, POWER DISSIPATION Limited by bond wire 50W 0W 25C 40A 30A 20A 10A 50C 75C 100C 0A 25C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C) 50C 75C 100C 125C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C) 4 Rev. 2.3 05.03.2009 90A 90A 80A 80A 70A 70A 60A 50A 40A 30A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT SGB30N60 VGE=20V 15V 13V 11V 9V 7V 5V 20A 10A 0A 0V 1V 2V 3V 4V 15V 13V 11V 9V 7V 5V 50A 40A 30A 20A 0A 0V 5V Tj=+25C -55C +150C 80A 70A 60A 50A 40A 30A 20A 10A 2V 4V 6V 8V 10V VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 90A 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C) 100A IC, COLLECTOR CURRENT VGE=20V 10A VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C) 0A 0V 60A VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V) 4.0V 3.5V IC = 60A 3.0V IC = 30A 2.5V 2.0V 1.5V 1.0V -50C 0C 50C 100C 150C Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.3 05.03.2009 SGB30N60 1000ns 1000ns td(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES td(off) tf td(on) 100ns tf td(on) tr tr 10ns 10A 20A 30A 40A 50A 10ns 0 60A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 11, Dynamic test circuit in Figure E) 20 30 40 RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 30A, Dynamic test circuit in Figure E) 1000ns VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 5.5V td(off) t, SWITCHING TIMES 10 100ns tf tr td(on) 10ns 0C 50C 100C 150C 5.0V 4.5V 4.0V max. 3.5V typ. 3.0V 2.5V min. 2.0V -50C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 30A, RG = 11, Dynamic test circuit in Figure E) 0C 50C 100C 150C Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA) 6 Rev. 2.3 05.03.2009 SGB30N60 4.0mJ 5.0mJ 4.0mJ 3.5mJ 3.0mJ 2.5mJ Eon* 2.0mJ Eoff 1.5mJ 1.0mJ Ets* 2.5mJ 2.0mJ 1.5mJ Eoff Eon* 1.0mJ 20A 30A 40A 50A 60A 0.0mJ 0 70A 10 20 30 40 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 11, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 30A, Dynamic test circuit in Figure E) 3.0mJ 10 K/W 0 *) Eon and Ets include losses due to diode recovery. 2.0mJ Ets* 1.5mJ Eon* 1.0mJ Eoff 0.5mJ 0.0mJ 0C ZthJC, TRANSIENT THERMAL IMPEDANCE 2.5mJ E, SWITCHING ENERGY LOSSES 3.0mJ 0.5mJ 0.5mJ 0.0mJ 10A *) Eon and Ets include losses due to diode recovery. 3.5mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 4.5mJ Ets* *) Eon and Ets include losses due to diode recovery. D=0.5 -1 10 K/W 0.2 0.1 0.05 -2 0.02 10 K/W R,(1/W) 0.3681 0.0938 0.0380 0.01 -3 10 K/W , (s) 0.0555 -3 1.26*10 -4 1.49*10 R1 R2 single pulse C 1= 1/R 1 C 2= 2/R 2 -4 50C 100C 10 K/W 1s 150C 10s 100s 1ms 10ms 100ms 1s tp, PULSE WIDTH Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 30A, RG = 11, Dynamic test circuit in Figure E) Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Rev. 2.3 05.03.2009 SGB30N60 25V 120V 480V 15V 10V Coss 100pF Crss 5V 0V 0nC 50nC 100nC 150nC 10pF 0V 200nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 30A) 20V 30V IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 500A 20 s 15 s 10 s 5 s 0 s 10V 10V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 25 s tsc, SHORT CIRCUIT WITHSTAND TIME Ciss 1nF C, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 20V 11V 12V 13V 14V 450A 400A 350A 300A 250A 200A 150A 100A 50A 0A 10V 15V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C) 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C) 8 Rev. 2.3 05.03.2009 SGB30N60 PG-TO263-3-2 9 Rev. 2.3 05.03.2009 SGB30N60 1 2 r1 r2 n rn Tj (t) p(t) r1 r2 rn TC Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L =180nH a nd Stray capacity C =900pF. 10 Rev. 2.3 05.03.2009 SGB30N60 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 Rev. 2.3 05.03.2009