BCV26, BCV46 PNP Silicon Darlington Transistors * For general AF applications 2 3 * High collector current 1 * High current gain * Complementary types: BCV27, BCV47 (NPN) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV26 30 BCV46 60 Collector-base voltage Unit VCBO BCV26 40 BCV46 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current, tp 10 ms ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg mA TS 74 C 1 -65 ... 150 2011-10-05 BCV26, BCV46 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 210 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BCV26 30 - - IC = 10 mA, IB = 0 , BCV46 60 - - IC = 100 A, IE = 0 , BCV26 40 - - IC = 100 A, IE = 0 , BCV46 80 - - 10 - - Collector-base breakdown voltage Unit V V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 30 , IE = 0 , BCV26 - - 0.1 VCB = 60 , IE = 0 , BCV46 - - 0.1 VCB = 30 , IE = 0 , TA = 150 C, BCV26 - - 10 VCB = 60 , IE = 0 , TA = 150 C, BCV46 - - 10 - - 100 Emitter-base cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain1) - hFE IC = 100 A, VCE = 1 V, BCV26 4000 - - IC = 100 A, VCE = 1 V, BCV46 2000 - - IC = 10 mA, VCE = 5 V, BCV26 10000 - - IC = 10 mA, VCE = 5 V, BCV46 4000 - - IC = 100 mA, VCE = 5 V, BCV26 20000 - - IC = 100 mA, VCE = 5 V, BCV46 10000 - - IC = 0.5 A, VCE = 5 V, BCV26 4000 - - IC = 0.5 A, VCE = 5 V, BCV46 2000 - - VCEsat - - 1 VBEsat - - 1.5 Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA 2 2011-10-05 BCV26, BCV46 1Pulse test: t < 300s; D < 2% Electrical Characteristics at T A = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 200 - MHz Ccb - 4.5 - pF AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 3 2011-10-05 BCV26, BCV46 DC current gain hFE = (IC) VCE = 5 V 10 6 h FE Collector-emitter saturation voltage IC = (VCEsat ), hFE = 1000 BCV 26/46 EHP00298 5 10 3 C 125 C 10 5 BCV 26/46 EHP00296 mA 150 C 25 C -50 C 10 2 25 C 5 5 -55 C 10 4 10 1 5 5 10 3 10 -1 10 0 10 1 10 2 10 0 mA 10 3 0 0.5 1.0 C Collector cutoff current ICBO = (TA) VCB = VCEmax IC = (VBEsat), hFE = 1000 C BCV 26/46 1.5 V CEsat Base-emitter saturation voltage 10 3 V EHP00295 10 4 BCV 26/46 EHP00297 nA mA CBO 150 C 25 C -50 C 10 2 max 10 3 5 10 2 typ 10 1 10 1 5 10 0 0 1.0 2.0 V 10 0 3.0 V BEsat 0 50 100 C 150 TA 4 2011-10-05 BCV26, BCV46 Transition frequency fT = (IC) VCE = 5 V 10 3 BCV 26/46 Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) EHP00294 16 pF MHz CCB(CEB ) fT 10 2 12 10 8 CEB 6 5 4 CCB 2 10 1 10 0 10 1 10 2 mA 0 0 10 3 4 8 12 16 V 22 VCB(VEB C Total power dissipation Ptot = (TS) Permissible Pulse Load Ptotmax/PtotDC = (tp ) 400 10 3 BCV 26/46 Ptot max 5 Ptot DC mW EHP00292 tp D= T T 300 Ptot tp 10 2 250 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 200 150 10 1 100 5 50 0 0 15 30 45 60 75 90 105 120 C TS 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-05 Package SOT23 BCV26, BCV46 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 6 2011-10-05 BCV26, BCV46 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-10-05