IPS80R2K0P7 MOSFET 800VCoolMOSP7PowerTransistor IPAKSL Thelatest800VCoolMOSTMP7seriessetsanewbenchmarkin800V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon'sover18years pioneeringsuperjunctiontechnologyinnovation. tab Features *Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss *Best-in-classDPAKRDS(on) *Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof0.5V *IntegratedZenerDiodeESDprotection *Fullyqualifiedacc.JEDECforIndustrialApplications *Fullyoptimizedportfolio Drain Pin 2, Tab Benefits Gate Pin 1 *Best-in-classperformance *Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts *Easytodriveandtoparallel *BetterproductionyieldbyreducingESDrelatedfailures *Lessproductionissuesandreducedfieldreturns *Easytoselectrightpartsforfinetuningofdesigns Source Pin 3 Potentialapplications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25C 800 V RDS(on),max 2.0 Qg,typ 9 nC ID 3 A Eoss @ 500V 0.85 J VGS(th),typ 3 V ESD class (HBM) 1C - Type/OrderingCode Package IPS80R2K0P7 PG-TO 251-3 Final Data Sheet Marking 80R2K0P7 1 RelatedLinks see Appendix A Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPS80R2K0P7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPS80R2K0P7 1Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 3 1.9 A TC=25C TC=100C - 6.0 A TC=25C - - 6 mJ ID=0.4A; VDD=50V EAR - - 0.05 mJ ID=0.4A; VDD=50V Avalanche current, repetitive IAR - - 0.4 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 24 W TC=25C Operating and storage temperature Tj,Tstg -55 - 150 C - Continuous diode forward current IS - - 2.2 A TC=25C IS,pulse - - 6.0 A TC=25C dv/dt - - 1 V/ns VDS=0to400V,ISD<=0.47A,Tj=25C dif/dt - - 50 A/s VDS=0to400V,ISD<=0.47A,Tj=25C Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) Diode pulse current 3) Reverse diode dv/dt 3) Maximum diode commutation speed 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 5.1 C/W - Thermal resistance, junction - ambient RthJA - - 62 C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - C/W n.a. Soldering temperature, wavesoldering only allowed at leads - - 260 C Tsold 1.6 mm (0.063 in.) from case for 10s 1) Limited by Tj max. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2s 2) Final Data Sheet 3 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPS80R2K0P7 3Electricalcharacteristics atTj=25C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.5 V VDS=VGS,ID=0.05mA - 10 1 - A VDS=800V,VGS=0V,Tj=25C VDS=800V,VGS=0V,Tj=150C - - 1 A VGS=20V,VDS=0V Min. Typ. Max. V(BR)DSS 800 - Gate threshold voltage VGS(th) 2.5 Zero gate voltage drain current IDSS Gate-source leakage curent incl. zener IGSS diode Drain-source on-state resistance RDS(on) - 1.7 4.4 2.0 - VGS=10V,ID=0.94A,Tj=25C VGS=10V,ID=0.94A,Tj=150C Gate resistance RG - 4.0 - f=250kHz,opendrain Unit Note/TestCondition Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 175 - pF VGS=0V,VDS=500V,f=250kHz Output capacitance Coss - 4.0 - pF VGS=0V,VDS=500V,f=250kHz Effective output capacitance, energy related1) Co(er) - 7 - pF VGS=0V,VDS=0to500V Effective output capacitance, time related2) Co(tr) - 61 - pF ID=constant,VGS=0V,VDS=0to500V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=0.94A, RG=33 Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=0.94A, RG=33 Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=0.94A, RG=33 Fall time tf - 20 - ns VDD=400V,VGS=13V,ID=0.94A, RG=33 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 0.6 - nC VDD=640V,ID=0.94A,VGS=0to10V Gate to drain charge Qgd - 4 - nC VDD=640V,ID=0.94A,VGS=0to10V Gate charge total Qg - 9 - nC VDD=640V,ID=0.94A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=0.94A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V 2) Final Data Sheet 4 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPS80R2K0P7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=0.94A,Tf=25C 730 - ns VR=400V,IF=0.47A,diF/dt=50A/s - 3.0 - C VR=400V,IF=0.47A,diF/dt=50A/s - 7 - A VR=400V,IF=0.47A,diF/dt=50A/s Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPS80R2K0P7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 30 25 101 100 s 1 s 1 ms 10 ms 20 100 DC ID[A] Ptot[W] 10 s 15 10-1 10 10-2 5 0 0 25 50 75 100 125 10-3 150 100 101 TC[C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 101 100 s 10 s 0.5 1 s 1 ms 10 ms 0.2 ZthJC[K/W] 100 ID[A] DC 10-1 100 0.1 0.05 0.02 0.01 single pulse 10-2 10-3 100 101 102 103 10-1 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPS80R2K0P7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 8 4.5 20 V 20 V 10 V 8V 7V 7 4.0 10 V 8V 7V 6V 3.5 6 5.5 V 6V 5 5V 4 ID[A] ID[A] 3.0 5.5 V 2.5 2.0 3 2 1.0 4.5 V 1 0 4.5 V 1.5 5V 0.5 0 5 10 15 0.0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25C;parameter:VGS ID=f(VDS);Tj=125C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 10 5V 5.5 V 6V 9 20 VDS[V] 5.4 6.5 V 7V 5.0 10 V 4.6 8 4.2 3.8 RDS(on)[] RDS(on)[] 7 6 3.4 98% 3.0 2.6 5 typ 2.2 4 1.8 1.4 3 1.0 2 0 2 4 6 8 0.6 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[C] RDS(on)=f(Tj);ID=0.94A;VGS=10V 7 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPS80R2K0P7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 7 10 9 25 C 6 8 5 7 120 V 640 V 6 VGS[V] ID[A] 4 150 C 3 5 4 3 2 2 1 1 0 0 2 4 6 8 10 0 12 0 2 VGS[V] 4 6 8 10 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=0.94Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 7 25 C 125 C 6 5 IF[A] EAS[mJ] 101 4 3 100 2 1 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 Tj[C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=0.4A;VDD=50V 8 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPS80R2K0P7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 950 104 900 103 850 2 10 C[pF] VBR(DSS)[V] Ciss 800 101 750 100 Coss Crss 700 -75 -50 -25 0 25 50 75 100 125 150 175 10-1 0 100 200 Tj[C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 2.0 1.8 1.6 1.4 Eoss[J] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 100 200 300 400 500 600 700 800 VDS[V] Eoss=f(VDS) Final Data Sheet 9 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPS80R2K0P7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPS80R2K0P7 6PackageOutlines DOCUMENT NO. Z8B00003329 DIM A A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 MILLIMETERS MIN MAX 2.20 2.35 0.80 1.14 0.64 0.89 0.65 1.15 5.20 5.50 0.46 0.59 0.46 0.89 6.00 6.22 5.04 5.55 6.45 6.70 4.60 5.10 2.28 4.56 3 3.00 3.60 0.80 1.20 0.90 1.25 INCHES MIN 0.087 0.031 0.026 0.026 0.205 0.018 0.018 0.236 0.198 0.254 0.181 MAX 0.093 0.044 0.033 0.045 0.217 0.023 0.023 0.245 0.219 0.264 0.201 0.090 0.180 3 0.118 0.031 0.035 SCALE 0 2.0 0 2.0 4mm EUROPEAN PROJECTION ISSUE DATE 01-04-2016 0.142 0.047 0.049 REVISION 07 Figure1OutlinePG-TO251-3,dimensionsinmm/inches Final Data Sheet 11 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPS80R2K0P7 7AppendixA Table11RelatedLinks * IFXCoolMOSWebpage:www.infineon.com * IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPS80R2K0P7 RevisionHistory IPS80R2K0P7 Revision:2018-02-07,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-03-21 Release of final version 2.1 2018-02-07 Corrected front page text TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2018-02-07