1
IPS80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
tab
IPAKSL
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Fullyqualifiedacc.JEDECforIndustrialApplications
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj=25°C 800 V
RDS(on),max 2.0 Ω
Qg,typ 9 nC
ID3 A
Eoss @ 500V 0.85 µJ
VGS(th),typ 3 V
ESD class (HBM) 1C -
Type/OrderingCode Package Marking RelatedLinks
IPS80R2K0P7 PG-TO 251-3 80R2K0P7 see Appendix A
2
800VCoolMOSªP7PowerTransistor
IPS80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
800VCoolMOSªP7PowerTransistor
IPS80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
3
1.9 ATC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 6.0 A TC=25°C
Avalanche energy, single pulse EAS - - 6 mJ ID=0.4A; VDD=50V
Avalanche energy, repetitive EAR - - 0.05 mJ ID=0.4A; VDD=50V
Avalanche current, repetitive IAR - - 0.4 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V
Gate source voltage VGS -20
-30
-
-
20
30 Vstatic;
AC (f>1 Hz)
Power dissipation Ptot - - 24 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 150 °C -
Continuous diode forward current IS- - 2.2 A TC=25°C
Diode pulse current2) IS,pulse - - 6.0 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 1 V/ns VDS=0to400V,ISD<=0.47A,Tj=25°C
Maximum diode commutation speed3) dif/dt - - 50 A/µsVDS=0to400V,ISD<=0.47A,Tj=25°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 5.1 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambient
for SMD version RthJA - - - °C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10s
1) Limited by Tj max. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs
4
800VCoolMOSªP7PowerTransistor
IPS80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.05mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=800V,VGS=0V,Tj=25°C
VDS=800V,VGS=0V,Tj=150°C
Gate-source leakage curent incl. zener
diode IGSS - - 1 µA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
1.7
4.4
2.0
-ΩVGS=10V,ID=0.94A,Tj=25°C
VGS=10V,ID=0.94A,Tj=150°C
Gate resistance RG- 4.0 - Ωf=250kHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 175 - pF VGS=0V,VDS=500V,f=250kHz
Output capacitance Coss - 4.0 - pF VGS=0V,VDS=500V,f=250kHz
Effective output capacitance, energy
related1) Co(er) - 7 - pF VGS=0V,VDS=0to500V
Effective output capacitance, time
related2) Co(tr) - 61 - pF ID=constant,VGS=0V,VDS=0to500V
Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=0.94A,
RG=33Ω
Rise time tr- 8 - ns VDD=400V,VGS=13V,ID=0.94A,
RG=33Ω
Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=0.94A,
RG=33Ω
Fall time tf- 20 - ns VDD=400V,VGS=13V,ID=0.94A,
RG=33Ω
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 0.6 - nC VDD=640V,ID=0.94A,VGS=0to10V
Gate to drain charge Qgd - 4 - nC VDD=640V,ID=0.94A,VGS=0to10V
Gate charge total Qg- 9 - nC VDD=640V,ID=0.94A,VGS=0to10V
Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=0.94A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V
5
800VCoolMOSªP7PowerTransistor
IPS80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=0.94A,Tf=25°C
Reverse recovery time trr - 730 - ns VR=400V,IF=0.47A,diF/dt=50A/µs
Reverse recovery charge Qrr - 3.0 - µC VR=400V,IF=0.47A,diF/dt=50A/µs
Peak reverse recovery current Irrm - 7 - A VR=400V,IF=0.47A,diF/dt=50A/µs
6
800VCoolMOSªP7PowerTransistor
IPS80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
5
10
15
20
25
30
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
7
800VCoolMOSªP7PowerTransistor
IPS80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
1
2
3
4
5
6
7
8
20 V 10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5 20 V 10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
02468
2
3
4
5
6
7
8
9
10 5 V 5.5 V 6 V 6.5 V
7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-50 -25 0 25 50 75 100 125 150
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
4.2
4.6
5.0
5.4
98%
typ
RDS(on)=f(Tj);ID=0.94A;VGS=10V
8
800VCoolMOSªP7PowerTransistor
IPS80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
1
2
3
4
5
6
7
25 °C
150 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0246810
0
1
2
3
4
5
6
7
8
9
10
640 V
120 V
VGS=f(Qgate);ID=0.94Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
10-1
100
101
102
25 °C
125 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
1
2
3
4
5
6
7
EAS=f(Tj);ID=0.4A;VDD=50V
9
800VCoolMOSªP7PowerTransistor
IPS80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-75 -50 -25 0 25 50 75 100 125 150 175
700
750
800
850
900
950
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
10-1
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500 600 700 800
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Eoss=f(VDS)
10
800VCoolMOSªP7PowerTransistor
IPS80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
11
800VCoolMOSªP7PowerTransistor
IPS80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
6PackageOutlines
DIM
A
2.0
01-04-2016
ISSUE DATE
EUROPEAN PROJECTION
0.031
0.018
0.018
0.236
0.026
0.181
0.254
0.118
0.087
0.205
0.035
0.026
0.198
MILLIMETERS
4.60
3.00
0.90
3
2.28
4.56
MIN
0.80
0.46
0.65
6.00
0.46
6.45
2.20
0.64
5.04
5.10
1.25
3.60
0.89
6.70
0.89
6.22
0.59
1.15
1.14
2.35
MAX
5.50
5.55
MIN
0.201
3
0.090
0.180
0.049
0.142
INCHES
MAX
0.023
0.045
0.245
0.023
0.033
0.093
0.044
0.264
0.217
0.219
0 2.0
SCALE
4mm
0
DOCUMENT NO.
Z8B00003329
REVISION
07
0.031 0.80 1.20 0.047
A1
b
b2
b4
c
c2
D
D1
E
E1
e
e1
N
L
L1
L2
5.20
Figure1OutlinePG-TO251-3,dimensionsinmm/inches
12
800VCoolMOSªP7PowerTransistor
IPS80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
7AppendixA
Table11RelatedLinks
•IFXCoolMOSWebpage:www.infineon.com
•IFXDesigntools:www.infineon.com
13
800VCoolMOSªP7PowerTransistor
IPS80R2K0P7
Rev.2.1,2018-02-07Final Data Sheet
RevisionHistory
IPS80R2K0P7
Revision:2018-02-07,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2017-03-21 Release of final version
2.1 2018-02-07 Corrected front page text
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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(“Beschaffenheitsgarantie”).
Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.