REVISIONS
LTR DESCRIPTION DATE (YR-MO-DA) APPROVED
A
Add device type 02 and RHA designator “R” requirements.
Make changes to 1.2.2, 1.4, and Table I. Make a change to case outline X
pin 32 under Figure 2. Add paragraphs 1.5, 4.4.4.1, and Table IIB.
Delete AVCC, DVCC, and tCMIN tests as specified under Table I. - ro
08-10-31 R. HEBER
B
Add device type 03 tested at low dose rate. Make change to paragraphs 1.2.2,
1.4, and 1.5. Make changes to footnotes 1/, 2/, and 3/ as specified under
Table I. Make change to Table IIB and paragraph 4.4.4.1. -rrp
11-06-14 C. SAFFLE
C Add single event latchup (SEL) testing information for device types 02 and 03.
Add paragraph 1.4.1. Delete device class M references. - ro 13-06-18 C. SAFFLE
D Add note under Figure 2 terminal connections. - ro 15-12-10 C. SAFFLE
REV
SHEET
REV D D
SHEET 15 16
REV STATUS REV D D D D D D D D D D D D D D
OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14
PMIC N/A PREPARED BY
DAN WONNELL
DLA LAND AND MARITIME
COLUMBUS, OHIO 4321 8-3990
http://www.landandmaritime.dla.mil
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
RAYMOND MONNIN
APPROVED BY
RAYMOND MONNIN
MICROCIRCUIT, DIGITAL-LINEAR, A/D
CONVERTER, 14-BIT, 80 MSPS, MONOLITHIC
SILICON
DRAWING APPROVAL DATE
04-10-25
AMSC N/A
REVISION LEVEL
D
SIZE
A
CAGE CODE
67268
5962-04230
SHEET 1 OF 16
DSCC FORM 2233
APR 97 5962-E110-16
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-04230
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
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APR 97
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962 R 04230 02 V X C
Federal
stock class
designator
RHA
designator
(see 1.2.1)
Device
type
(see 1.2.2)
Device
class
designator
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\ / (see 1.2.3)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type Generic number Operating temperature Circuit function
01 AD6645 -35C TC +85C A/D converter, 14-bit, 80 MSPS
02 AD6645 -55C TA +125C Radiation hardened A/D converter,
14-bit, 80 MSPS
03 AD6645 -55C TA +125C Radiation hardened A/D converter,
14-bit, 80 MSPS
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class Device requirements documentation
Q or V Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style
X See figure 1 52 Quad flat pack with non-conductive tie bars
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
STANDARD
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1.3 Absolute maximum ratings. 1/
Analog supply voltage (AVCC) .................................................................................................. 0 V dc to 7 V dc
Digital supply voltage (DVCC) ................................................................................................... 0 V dc to 7 V dc
Analog input voltage ................................................................................................................. 0 V dc to AVCC
Analog input current ................................................................................................................. 25 mA
Digital input voltage .................................................................................................................. 0 V dc to AVCC
Digital output current ................................................................................................................ 4 mA
Junction temperature (TJ) ......................................................................................................... +175C
Lead temperature (soldering, 10 seconds) ............................................................................... +300C
Storage temperature range ...................................................................................................... -65C to +150C
Thermal resistance, junction-to-case (θJC) ............................................................................... 7.2C/W
1.4 Recommended operating conditions.
Analog supply voltage (AVCC) .................................................................................................. 4.75 V dc to 5.25 V dc
Digital supply voltage (DVCC) ................................................................................................... 3.0 V dc to 3.6 V dc
Case operating temperature range (TC) for device type 01 ...................................................... -35C to +85C
Ambient operating temperature range (TA) for device types 02 and 03 ................................... -55C to +125C
1.4.1 Operating performance characteristics.
AC performance: TA = +25C, AVCC = 5 V, DVCC = 3.3 V, fC = 82 MSPS, fIN = 175 MHz.
Signal to noise ratio (SNR) at -1 dBFS ................................................................................. 71 dB
Signal to noise and distortion (SINAD) at -1 dBFS ............................................................... 70 dB
Worst case second or third harmonic (2nd to 3rd) at -1 dBFS .............................................. -78 dBc
Worst case fourth or higher harmonic (4th plus) at -1 dBFS ................................................. -91 dBc
1.5 Radiation features:
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device type 02 ...................................................................................................................... 100 krads(Si) 2/
Maximum total dose available (dose rate 10 mrads(Si)/s):
Device type 03 ...................................................................................................................... 50 krads(Si) 3/
Single event phenomenon (SEP):
No single event latchup (SEL) occurs at effective linear energy transfer (LET) (see 4.4.4.2):
Device types 02 and 03: ....................................................................................................... 80 MeV-cm2/mg 4/
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883,
method 1019, condition A.
3/ For device type 03, radiation end point limits for the noted parameters are guaranteed for the conditions specified in
MIL-STD-883, method 1019, condition D.
4/ Limits are characterized at initial qualification and after any design or process changes that may affect the SEP
characteristics, but are not production lot tested unless specified by the customer through the purchase order or contract.
For more information on single event effect (SEE) test results, customers are requested to contact the manufacturer.
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-04230
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COLUMBUS, OHIO 43218-3990
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APR 97
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 - Test Method Standard Microcircuits.
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion
Irradiation of semiconductor Devices.
(Copies of these documents are available online at http://www.astm.org or from ASTM International, 100 Barr Harbor Drive,
P.O. Box C700, West Conshohocken, PA, 19428-2959).
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
STANDARD
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3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Timing waveforms. The timing waveforms shall be as specified on figure 3.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the
full case operating temperature range for device type 01 and ambient operating temperature range for device types 02 and 03.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall
be provided with each lot of microcircuits delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
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TABLE IA. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/ 3/
AVCC = 5 V, DVCC = 3.3 V,
fc = 80 MSPS
Group A
subgroups
Device
type
Limits
Unit
unless otherwise specified Min Max
Resolution RES 4/ 5/ 1, 2, 3 All 14 Bits
Offset error OE 1, 2, 3 All -10 +10 mV
M,D,P,L,R 1 02 -10 +10
M,D,P,L 1 03 -10 +10
Gain error AE 1, 2, 3 01 -10 +10 %FS
1 02, 03 -10 +10
2,3 -14 +14
M,D,P,L,R 1 02 -10 +10
M,D,P,L 1 03 -10 +10
Analog supply current IAVCC AVCC = 5.0 V 1, 2, 3 All 320 mA
M,D,P,L,R 1 02 320
M,D,P,L 1 03 320
Digital supply current IDVCC DVCC = 3.3 V 1, 2, 3 All 45 mA
M,D,P,L,R 1 02 45
M,D,P,L 1 03 45
Power consumption PD 4/ 1, 2, 3 All 1.75 W
Differential input voltage VDIFF 5/ 1, 2, 3 01 0.4 Vp-p
Output voltage, logic “1” VOH DVCC = 3.3 V, IOH = 0 5/ 1, 2, 3 01 2.85 V
DVCC = 3.3 V, IOH = 0 4/ 02, 03 2.8
Output voltage, logic “0” VOL DVCC = 3.3 V, IOL = 0 5/ 1, 2, 3 01 0.5 V
DVCC = 3.3 V, IOL = 0 4/ 02, 03 0.5
No missing codes 4/ 4,5,6 02, 03 0 0
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
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TABLE IA. Electrical performance characteristics – continued.
Test
Symbol
Conditions 1/ 2/ 3/
AVCC = 5 V, DVCC = 3.3 V,
fc = 80 MSPS
Group A
subgroups
Device
type
Limits
Unit
unless otherwise specified Min Max
Differential non-linearity DNL 6/ 4,5 02, 03 -1 1.5 LSB
6 -1 2.0
M,D,P,L,R 4 02 -1 1.5
M,D,P,L 4 03 -1 1.5
Signal to noise ratio
(SNR) at -1 dBFS
SNR 70.1 MHz 4/ 6/ 4, 5, 6 01 68.5 dB
150.1 MHz 4/ 6/ 67
30 MHz 4/ 6/ 4,5 02, 03 72
6 70.5
70 MHz 4/ 6/ 4,5 71.5
6 70
Signal to noise ratio
and distortion (SINAD)
at -1 dBFS
SINAD 70.1 MHz 4/ 6/ 4, 5, 6 01 68 dB
150.1 MHz 4/ 6/ 65
30 MHz 4/ 6/ 4,5 02, 03 71.5
6 70
70 MHz 4/ 6/ 4,5 71
6 69.5
Spurious free dynamic
range (SFDR) at
-1 dBFS
SFDR 70.1 MHz 4/ 6/ 4, 5, 6 01 76 dBc
150.1 MHz 4/ 6/ 67
Worst case second or
third harmonic at
-1 dBFS
2nd or 30 MHz 4/ 6/ 4 02, 03 82 dB
3rd 5 80
6 79
70 MHz 4/ 6/ 4 82
5 80
6 79
Worst case fourth or
higher harmonic at
-1 dBFS
4 th 30 MHz 4/ 6/ 4,5 02, 03 84 dB
plus 6 80
70 MHz 4/ 6/ 4,5 84
6 80
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-04230
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COLUMBUS, OHIO 43218-3990
REVISION LEVEL
D
SHEET
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APR 97
TABLE IA. Electrical performance characteristics - continued.
Test
Symbol
Conditions 1/ 2/ 3/
AVCC = 5 V, DVCC = 3.3 V,
fc = 80 MSPS
Group A
subgroups
Device
type
Limits
Unit
unless otherwise specified Min Max
Two tone
intermodulation
distortion (IMD)
rejection
IMDR At -7 dBFS, F1, F2 4/ 6/ 7/ 4, 5, 6 01 75.5 dBc
ENCODE pulse width
HIGH tENCH 4/ 5/ 8/ 9, 10, 11 All 5.625 ns
ENCODE pulse width
LOW tENCL 4/ 5/ 8/ 9, 10, 11 All 5.625 ns
Encode rising to
dataready falling tDR 4/ 5/ 9, 10, 11 All 1.0 3.1 ns
Encode rising to
dataready rising tE_DR 50% duty cycle 4/ 5/ 9, 10, 11 All 7.3 9.4 ns
ENCODE to DATA
falling low tE_FL 4/ 5/ 9, 10, 11 All 2.4 7.0 ns
ENCODE to DATA
rising low tE_RL 4/ 5/ 9, 10, 11 All 1.4 4.7 ns
ENCODE to DATA
delay (hold time) tH_E 4/ 5/ 9, 10, 11 All 1.4 4.7 ns
ENCODE to DATA
delay (setup time) tS_E 4/ 5/ 9, 10, 11 All tENC-
tE
_
FL
(
MAX
)
tENC-
tE
_
FL
(
MIN
)
ns
50% duty cycle 4/ 5/ 5.3 10.0
Dataready to DATA
delay (hold time) tH_DR 50% duty cycle 4/ 5/ 9/ 9, 10, 11 All 6.6 7.9 ns
Dataready to DATA
delay (setup time) tS_DR 50% duty cycle 4/ 5/ 9/ 9, 10, 11 All 2.1 5.1 ns
1/ For device type 01; -35C TC +85C. For device types 02 and 03; -55C TA +125C.
2/ Device type 02 supplied to this drawing has been characterized through all levels M, D, P, L, R of irradiation.
Device type 03 supplied to this drawing has been characterized through all levels M, D, P, L of irradiation. However,
device type 02 is only tested at the “R” level and device type 03 is only tested at the “L” level. Pre and Post irradiation
values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any
RHA level, TA = +25C.
3/ For device type 02, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low
dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified
in MIL-STD-883, method 1019, condition A for device type 02 and condition D for device type 03. Device type 03, has been
tested at low dose rate.
4/ Not tested post irradiation.
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TABLE IA. Electrical performance characteristics - continued.
5/ Parameter tested as part of device initial characterization and after design and process changes.
6/ All AC parameters tested by driving ENCODE and ENCODE differentially.
7/ F1 = 70.1 MHz, F2 = 72.1 MHz.
8/ Parameter is a function of tENCL and tENCH.
9/ Dataready to DATA delay (tH_DR and tS_DR) is dependent on tENC and duty cycle.
TABLE IB. SEP test limits. 1/
Device types SEP Temperature Bias VS Linear energy transfer
(LET)
02 and 03 No SEL +125C +5.25 V and 3.6 V Effective
LET 80 MeV-cm2/mg
1/ For single event phenomenon (SEP) test conditions, see 4.4.4.2 herein.
STANDARD
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Case outline X
Symbol Inches Millimeters
Min Max Min Max
A .099 .131 2.155 3.327
A1 .090 .120 2.286 3.048
A2 .063 .077 1.600 1.956
A3 .019 .031 0.483 0.787
b 0.015 BSC 0.381 BSC
B / C .495 .505 12.573 12.827
B1 / C1 .395 .405 10.033 10.287
D / E 1.440 1.460 36.576 37.084
D1 / E1 .575 .585 14.605 14.859
e .040 BSC 1.016 BSC
L 1.090 1.110 27.686 28.194
L1 .590 .610 14.986 15.494
NOTES:
1. The U.S. Government preferred system of measurement is the metric S.I. system. However, since this item was
originally designed using inch-pound units of measurements, in the event of conflict between the metric and
inch-pound units, the inch-pound units shall take precedence.
2. Dimensions B1/C1 identify the exposed heat sink.
FIGURE 1. Case outline.
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Device types All Device types All
Case outline X Case outline X
Terminal
number Terminal symbol Terminal
number Terminal symbol
1 DVCC 27 GND
2 GND 28
AVCC
3 VREF 29 GND
4 GND 30
AVCC
5 ENC 31 Do not connect
6 ENC 32 Do not connect
7 GND 33
DVCC
8 AVCC 34 GND
9 AVCC 35 DMID
10 GND 36 D0 (LSB)
11 AIN 37 D1
12 AIN 38 D2
13 GND 39 D3
14 AVCC 40 D4
15 GND 41 D5
16 AVCC 42 GND
17 GND 43
DVCC
18 AVCC 44 D6
19 GND 45 D7
20 C1 46 D8
21 GND 47 D9
22 AVCC 48 D10
23 GND 49 D11
24 C2 50 D12
25 GND 51 D13 (MSB)
26 AVCC 52 DRY
Note: It is required that the exposed paddle be soldered to GND plane to achieve the
best electrical and thermal performance. Lid is internally tied to GND via package.
FIGURE 2. Terminal connections.
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NOTE: Normally, tA = -500 ps.
FIGURE 3. Timing waveforms.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q and V.
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b. Interim and final electrical test parameters shall be as specified in table IIA herein.
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein.
4.4.1 Group A inspection.
a. Tests shall be as specified in table IIA herein.
b. Subgroups 7 and 8 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
STANDARD
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TABLE IIA. Electrical test requirements.
Test requirements Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class Q
Device
class V
Interim electrical
parameters (see 4.2)
1 1
Final electrical
parameters (see 4.2)
1,2,3,4,5,6, 1/
9,10,11
1,2,3,4,5,6, 1/ 2/
9,10,11
Group A test
requirements (see 4.4)
1,2,3,4,5,6,9,
10,11
1,2,3,4,5,6,9,10,11
Group C end-point electrical
parameters (see 4.4)
1 1 2/
Group D end-point electrical
parameters (see 4.4)
1 1
Group E end-point electrical
parameters (see 4.4)
1,4 1,4
1/ PDA applies to subgroup 1.
2/ Delta limits as specified in table IIB shall be computed with reference
to the previous interim electrical parameters. Delta parameters are
excluded from PDA.
TABLE IIB. 240 hour burn-in and group C end-point electrical parameters. TA = +25C.
Parameter Device type 240 hour
delta limits
Group C
Delta limits Units
IAVCC 02, 03 6 6 mA
IDVCC 02, 03 2 2 mA
OE 02, 03 4 4 mV
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4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a. End-point electrical parameters shall be as specified in table IIA herein.
b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point
electrical parameter limits as defined in table IA at TA = +25C 5C, after exposure, to the subgroups specified in
table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A for device type 01, condition D for device type 02, and as specified herein.
4.4.4.2 Single event phenomena (SEP). When specified in the purchase order or contract, SEP testing shall be performed on
class V devices. SEP testing shall be performed on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as
approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or
latchup characteristics. Test four devices with zero failures. ASTM F1192 may be used as a guideline when performing SEP
testing. The test conditions for SEP are as follows:
a. The ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive
(i.e. 0 angle 60). No shadowing of the ion beam due to fixturing or package related effects is allowed.
b. The fluence shall be 107 ions/cm2.
c. The flux shall be between 102 and 105 ions/cm2/s.
d. The particle range shall be 20 microns in silicon.
e. The test temperature shall be +125C and the maximum rated operating temperature 10C for single event
latchup testing.
f. Bias conditions shall be AVCC = 5.25 V and VCC = 3.6 V for latchup measurements.
g. For SEP test limits, see Table IB herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-04230
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
D
SHEET
16
DSCC FORM 2234
APR 97
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing.
6.7 Additional information. When applicable, a copy of the following additional data shall be maintained and available from
the device manufacturer:
a. RHA test conditions (SEP).
b. Occurrence of latchup (SEL).
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 15-12-10
Approved sources of supply for SMD 5962-04230 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-0423001QXC 24355 AD6645ASQ/QMLQ
5962R0423002VXC 24355 AD6645ASQ/QMLR
5962L0423003VXC 24355 AD6645ASQ/QMLL
1/ The lead finish shown for each PIN representing a hermetic
package is the most readily available from the manufacturer
listed for that part. If the desired lead finish is not listed contact
the vendor to determine its availability.
2/ Caution. Do not use this number for item acquisition.
Items acquired to this number may not satisfy the performance
requirements of this drawing.
Vendor CAGE Vendor name
number and address
24355 Analog Devices
Route 1 Industrial Park
P.O. Box 9106
Norwood, MA 02062
Point of contact: 7910 Triad Center Drive
Greensboro, NC 27409-9605
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
