GF1G/17 - Vishay / Semiconductor

GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M

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Revision: 11-Dec-13 1Document Number: 88617

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Surface Mount Glass Passivated Rectifier

FEATURES

• Superectifier structure for high reliability condition

• Ideal for automated placement

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

250 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer,

automotive and telecommunication.

MECHANICAL DATA

Case: DO-214BA, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 1.0 A

VRRM 50 V, 100 V, 200 V, 400 V, 600 V,

800 V, 1000 V

IFSM 30 A

VF1.1 V, 1.2 V

IR5.0 μA

TJ max. 175 °C

Package DO-214BA (GF1)

Diode variations Single die

DO-214BA (GF1)

SUPERECTIFIER®

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT

Device marking code GA GB GD GG GJ GK GM

Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V

Max. RMS voltage VRMS 35 70 140 280 420 560 700 V

Max. DC blocking voltage VDC 50 100 200 400 600 800 1000 V

Max. average forward rectified current at TL = 125 °C IF(AV) 1.0 A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 30 A

Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C

GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M

www.vishay.com Vishay General Semiconductor

Revision: 11-Dec-13 2Document Number: 88617

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve Fig. 2 - Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT

Max. instantaneous forward

voltage 1.0 A VF1.1 1.2 V

Max. DC reverse current at

rated DC blocking voltage

TA = 25 °C IR

5.0 μA

TA = 125 °C 50

Typical reverse recovery time IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A trr 2.0 μs

Typical junction capacitance 4.0 V, 1 MHz CJ15 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT

Typical thermal resistance (1) RJA 80 °C/W

RJL 26

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

GF1J-E3/67A 0.104 67A 1500 7" diameter plastic tape and reel

GF1J-E3/5CA 0.104 5CA 6500 13" diameter plastic tape and reel

GF1JHE3/67A (1) 0.104 67A 1500 7" diameter plastic tape and reel

GF1JHE3/5CA (1) 0.104 5CA 6500 13" diameter plastic tape and reel

100 130110 120 140 150 160 180

0.50

1.00

60 Hz Resistive or Inductive Load

Lead Temperature (°C)

1.25

0.75

0.25

170

Average Forward Rectified Current (A)

P.C.B. Mounted on

0.2" x 0.2" (5.0 mm x 5.0 mm)

Copper Pad Areas

tp, Pulse Width (ms)

Peak Forward Surge Current (A)

0.1 10

100

1000

Sine waveform,

= 25 °C

GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M

www.vishay.com Vishay General Semiconductor

Revision: 11-Dec-13 3Document Number: 88617

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.1

0.01

0.4 0.6 1.4 1.60.8 1.0 1.2

Pulse Width = 300 µs

1 % Duty Cycle

TJ = 25 °C

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

0.1

0.01

200 10040 60 80

= 25 °C

= 100 °C

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (µA)

1100

Reverse Voltage (V)

Junction Capacitance (pF)

= 25 °C

f = 1.0 MHz

sig

= 50 mV

p-p

0.01 100

100

0.1

0.1 1 10

Mounted on

0.2" x 0.27" (5.0 mm x 7.0 mm)

Copper Pad Areas

Transient Thermal Impedance (°C/W)

t - Pulse Duration (s)

0.167 (4.24)

0.187 (4.75)

0.0065 (0.17)

0.015 (0.38)

0.030 (0.76)

0.060 (1.52)

0.196 (4.98)

0.226 (5.74)

0.094 (2.39)

0.114 (2.90)

0.100 (2.54)

0.118 (3.00)

0.040 (1.02)

0.066 (1.68)

0.098 (2.49)

0.108 (2.74)

0.006 (0.152) TYP.

DO-214BA (GF1)

0.076 (1.93)

MAX.

0.220 (5.58)

REF.

0.060 (1.52)

MIN.

Mounting Pad Layout

Cathode Band

0.066 (1.68)

MIN.

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Revision: 08-Feb-17 1Document Number: 91000

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