THIS PAGE INTENTIONALLY LEFT BLANK
MODULATORS - SMT
10
10 - 10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3 / 495LP3E
General Description
Features
Functional Diagram
The HMC495LP3 & HMC495LP3E are low noise
Wideband Direct Quadrature Modulator RFICs which
are ideal for digital modulation applications from 250 -
3800 MHz including; Cellular/3G, Broadband Wireless
Access & ISM circuits. Housed in a compact 3x3 mm
(LP3) SMT QFN package, the RFIC requires minimal
external components & provides a low cost alternative
to more complicated double upconversion architec-
tures. The RF output port is single-ended and matched
to 50 Ohms with no external components. The LO re-
quires -6 to +6 dBm and can be driven in either dif-
ferential or single-ended mode while the Baseband in-
puts will support modulation inputs from DC - 250 MHz
typical. This device is optimized for a supply voltage of
+3.3V @ 108 mA and will provide stable performance
over a +3V to +3.6V range.
Wideband RF Frequency Range
High Carrier Suppression: 38 dBc
Very Low Noise Floor: -158 dBm/Hz
Low LO Power: -6 to +6 dBm
Differential or Single Ended LO Input
Single Low Current Supply: +3.3V@ 108 mA
Typical Applications
The HMC495LP3 / HMC495LP3E is suitable for
various modulation systems:
• UMTS, GSM or CDMA Basestations
• Fixed Wireless or WLL
• ISM Transceivers, 900 & 2400 MHz
• GMSK, QPSK, QAM, SSB Modulators
Electrical Speci cations, See Test Conditions on following page herein.
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range, RF 450 - 960 1800 - 2200 2100 - 2700 3400 - 3800 MHz
Output Power -7 -5 -8 -6 -9 -7 -11 -9 dBm
Output P1dB 2 1 0 -2 dBm
Output IP3 17 14 14 13 dBm
Output Noise Floor -159 -158 -158 -157 dBm/Hz
Carrier Suppression (uncalibrated) 38 38 35 34 dBc
Sideband Suppression
(uncalibrated) 34 31 30 28 dBc
IM3 Suppression 59 50 50 56 dBc
RF Port Return Loss 18 17 16 13 dB
LO Port Return Loss 13 8 7 5 dB
CDMA IS95
ACPR@ 880 MHz & 1960 MHz -72 -71.5 N/A N/A dBc
Channel Power -15 -18.4 N/A N/A dBm
W-CDMA 3GPP
ACPR@ 1960 & 2140 MHz N/A -60 -59 N/A dBc
Channel Power N/A -17.3 -14.4 N/A dBm
MODULATORS - SMT
10
10 - 11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Electrical Speci cations, (continued)
Parameter Conditions Min. Typ. Max. Units
RF Output
RF Frequency Range 0.25 3.8 GHz
RF Return Loss 16 dB
LO Input
LO Frequency Range 0.25 3.8 GHz
LO Input Power With 68 Ohm shunt resistor on LO port. -6 0 +6 dBm
LO Port Return Loss With 68 Ohm shunt resistor on LO port. 7 dB
Baseband Input Port
Baseband Port Bandwidth With 50Ω source & external 10 pF shunt cap to ground.
Refer to HMC495LP3 Application Circuit. DC 250 MHz
Baseband Input DC Voltage (Vbbdc) This parameter can be varied in order to optimize
the device performance over temperature and/or supply. 1.0 1.15 1.2 V
Baseband Input DC Bias Current (Ibbdc) Single-ended. 40 μA
Single-ended Baseband Input Capacitance De-embed to the lead of the device. 0.5 pF
DC Power Requirements See Test Conditions Below
Supply Voltage (Vcc1, Vcc2, Vb1, Vb2) 3 3.3 3.6 V
Supply Current (Icc1, Icc2, Ib1, Ib2) 108 mA
Parameter Condition
Temperature +25 °C
Baseband Input Frequency 200 kHz
Baseband Input DC Voltage (Vbbdc) 1.15V
Baseband Input AC Voltage (Peak to Peak Differential, I and Q) 800 mV
Baseband Input AC Voltage for OIP3 Measurement (Peak to Peak Differential, I and Q) 400 mV per tone @ 150 & 250 kHz
Frequency Offset for Output Noise Measurements 20 MHz
Supply & Bias Voltage (Vb1, Vb2, Vcc1, Vcc2) 3.3V
LO Input Power 0 dBm
LO Input Mode Single-Ended
Mounting Con guration Refer to HMC495LP3 Application Schematic Herein
Sideband & Carrier Feedthrough Uncalibrated
Test Conditions: Unless Otherwise Speci ed, the Following Test Conditions Were Used
Calibrated vs. Uncalibrated Test Results
During the Uncalibrated Sideband and Carrier Suppression tests, care is taken to ensure that the I/Q signal paths from
the Vector Signal Generator (VSG) to the Device Under Test (DUT) are equal. The “Uncalibrated, +25 °C” Sideband
and Carrier Suppression plots were measured at room temperature, while the “Uncalibrated, over Temperature”
Sideband and Carrier Suppression plots represent the worst case uncalibrated suppression levels measured at T=
-40 °C, +25 °C, and +85 °C.
The “Calibrated, + 25 °C” Sideband Suppression data was plotted after a manual adjustment of the I/Q amplitude
balance and I/Q phase offset (skew) at +25 °C, and at each LO input power level. The +25 °C adjustment settings
were held constant during tests over temperature. The “Calibrated, over Temperature” plots represent the worst case
calibrated Sideband Suppression levels at T= -40 °C, +25 °C, and +85 °C.
The “Calibrated, +25 °C” Carrier Suppression data was plotted after a manual adjustment of the Ip/In & Qp/Qn DC
offsets at +25 °C, and at each LO input power level. The +25 °C adjustment settings were held constant during tests
over temperature. The “Calibrated, over Temperature” plots represent the worst case Carrier Suppression levels
measured at T= -40 °C, +25 °C, and +85 °C.
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3 / 495LP3E
MODULATORS - SMT
10
10 - 12
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Wideband Performance vs. Frequency
Output Noise Floor
and P1dB vs. Frequency
Output IP3 vs. Frequency Return Loss
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0 400 800 1200 1600 2000 2400 2800 3200 3600 4000
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
OUTPUT POWER (dBm), CARRIER SUPPR. (dBc)
SIDEBAND SUPPR. (dBc), 3rd HARMONIC (dBc)
FREQUENCY (MHz)
OUTPUT POWER
3rd HARMONIC
CARRIER SUPPRESSION
SIDEBAND SUPPRESSION
-170
-160
-150
-140
-130
-120
-20
-15
-10
-5
0
5
0 400 800 1200 1600 2000 2400 2800 3200 3600 4000
OUTPUT NOISE (dBm/Hz)
OUTPUT P1dB (dBm)
FREQUENCY (MHz)
SET-UP NOISE FLOOR
0
2
4
6
8
10
12
14
16
18
20
0 400 800 1200 1600 2000 2400 2800 3200 3600 4000
OUTPUT IP3 (dBm)
FREQUENCY (MHz)
-25
-20
-15
-10
-5
0
0 400 800 1200 1600 2000 2400 2800 3200 3600 4000
LO (Single-ended)
RF
RETURN LOSS (dB)
FREQUENCY (MHz)
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3 / 495LP3E
MODULATORS - SMT
10
10 - 13
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Output Noise vs. LO Power
Over Temperature@ 830 MHz
Output Noise vs. LO Power
Over Supply@ 830 MHz
Sideband Suppression*
vs. LO Power@ 830 MHz
Carrier Suppression*
vs. LO Power@ 830 MHz
Output IP3 & Output Power vs.
LO Power Over Temperature@ 830 MHz
Output IP3 & Output Power vs.
LO Power Over Supply@ 830 MHz
-60
-50
-40
-30
-20
-6-5-4-3-2-10123456
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
SIDEBAND SUPPRESSION (dBc)
LO POWER (dBm)
-10
-5
0
5
10
15
20
-9
-8
-7
-6
-5
-4
-3
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
OUTPUT IP3 (dBm)
OUTPUT POWER (dBm)
LO POWER (dBm)
-60
-50
-40
-30
-20
-6-5-4-3-2-10123456
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
CARRIER SUPPRESSION (dBc)
LO POWER (dBm)
-160
-155
-150
-145
-140
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
+25 C
+85 C
-40 C
OUTPUT NOISE (dBm/Hz)
LO POWER
(
dBm
)
-160
-155
-150
-145
-140
-6-5-4-3-2-10123456
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
OUTPUT NOISE (dBm/Hz)
LO POWER
(
dBm
)
* See note titled “Calibrated vs. Uncalibrated test results” herein.
-10
-5
0
5
10
15
20
-9
-8
-7
-6
-5
-4
-3
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
+25 C
+85 C
-40 C
OUTPUT IP3 (dBm)
OUTPUT POWER (dBm)
LO POWER (dBm)
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3 / 495LP3E
MODULATORS - SMT
10
10 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
* See note titled “Calibrated vs. Uncalibrated test results” herein.
Output Noise vs. LO Power
Over Temperature@ 1900 MHz
Output Noise vs. LO Power
Over Supply@ 1900 MHz
Sideband Suppression*
vs. LO Power@ 1900 MHz
Carrier Suppression*
vs. LO Power@ 1900 MHz
Output IP3 & Output Power vs.
LO Power Over Temperature@ 1900 MHz
Output IP3 & Output Power vs.
LO Power Over Supply@ 1900 MHz
-60
-50
-40
-30
-20
-6-5-4-3-2-10123456
UNCALIBRATED, +25 C
CALIBRATED, +25 C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
SIDEBAND SUPPRESSION (dBc)
LO POWER (dBm)
-10
-5
0
5
10
15
20
-9
-8
-7
-6
-5
-4
-3
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
OUTPUT IP3 (dBm)
OUTPUT POWER (dBm)
LO POWER (dBm)
-60
-50
-40
-30
-20
-6-5-4-3-2-10123456
UNCALIBRATED, +25 C
CALIBRATED, +25 C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
CARRIER SUPPRESSION (dBc)
LO POWER (dBm)
-160
-155
-150
-145
-140
-6-5-4-3-2-10123456
+25 C
+85 C
-40 C
OUTPUT NOISE (dBm/Hz)
LO POWER
(
dBm
)
-160
-155
-150
-145
-140
-6-5-4-3-2-10123456
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
OUTPUT NOISE (dBm/Hz)
LO POWER (dBm)
-10
-5
0
5
10
15
20
-9
-8
-7
-6
-5
-4
-3
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
+25 C
+85 C
-40 C
OUTPUT IP3 (dBm)
OUTPUT POWER (dBm)
LO POWER (dBm)
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3 / 495LP3E
MODULATORS - SMT
10
10 - 15
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Output Noise vs. LO Power
Over Temperature@ 2100 MHz
Output Noise vs. LO Power
Over Supply@ 2100 MHz
Sideband Suppression*
vs. LO Power@ 2100 MHz
Carrier Suppression*
vs. LO Power@ 2100 MHz
Output IP3 & Output Power vs.
LO Power Over Temperature@ 2100 MHz
Output IP3 & Output Power vs.
LO Power Over Supply@ 2100 MHz
-60
-50
-40
-30
-20
-6-5-4-3-2-10123456
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
SIDEBAND SUPPRESSION (dBc)
LO POWER (dBm)
-10
-5
0
5
10
15
20
-9
-8
-7
-6
-5
-4
-3
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
OUTPUT IP3 (dBm)
OUTPUT POWER (dBm)
LO POWER (dBm)
-60
-50
-40
-30
-20
-6-5-4-3-2-10123456
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
CARRIER SUPPRESSION (dBc)
LO POWER (dBm)
-160
-155
-150
-145
-140
-6-5-4-3-2-10123456
+25 C
+85 C
-40 C
OUTPUT NOISE (dBm/Hz)
LO POWER
(
dBm
)
-160
-155
-150
-145
-140
-6-5-4-3-2-10123456
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
OUTPUT NOISE (dBm/Hz)
LO POWER
(
dBm
)
-10
-5
0
5
10
15
20
-9
-8
-7
-6
-5
-4
-3
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
+25 C
+85 C
-40 C
OUTPUT IP3 (dBm)
OUTPUT POWER (dBm)
LO POWER (dBm)
* See note titled “Calibrated vs. Uncalibrated test results” herein.
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3 / 495LP3E
MODULATORS - SMT
10
10 - 16
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Cellular CDMA @ 880 MHz
ACPR @ 885 kHz, Vcc= 3.3V, Vdc= 1.15V
PCS CDMA @ 1960 MHz
ACPR @ 885 kHz, Vcc= 3.3V, Vdc= 1.15V
W-CDMA @ 1960 MHz
ACPR @ 3.84 MHz, Vcc= 3.3V, Vdc= 1.15V
W-CDMA @ 2140 MHz
ACPR @ 3.84 MHz, Vcc= 3.3V, Vdc= 1.15V
-100
-90
-80
-70
-60
-50
-40
-30
-20
879 879.3 879.5 879.8 880 880.3 880.5 880.8 881
POWER (dBm)
FREQUENCY (MHz)
CP = -15dBm
ACPR = -72.3dBc
CP = -15dBm
ACPR = -72dBc
-100
-90
-80
-70
-60
-50
-40
-30
-20
1959 1959.25 1959.5 1959.75 1960 1960.25 1960.5 1960.75 1961
POWER (dBm)
FREQUENCY (MHz)
CP = -18.42dBm
ACPR = -71.5dBc
CP = -18.42dBm
ACPR = -71.5dBc
-100
-90
-80
-70
-60
-50
-40
-30
-20
1955 1956 1957 1958 1959 1960 1961 1962 1963 1964 1965
POWER (dBm)
FREQUENCY (MHz)
CP = -17.3dBm
ACPR = -59.7dBc
CP = -17.3dBm
ACPR = -59.8dBc
-100
-90
-80
-70
-60
-50
-40
-30
-20
2135 2136 2137 2138 2139 2140 2141 2142 2143 2144 2145
POWER (dBm)
FREQUENCY (MHz)
CP = -14.4Bm
ACPR = -59.2dBc
CP = -14.4dBm
ACPR = -59.8dBc
Note 1: W-CDMA (Modulation Set-up for ACPR Mode); The Baseband I and Q input signals were generated using “Test Model 1
with 64 channels” settings in the Agilent E3844C.
Note 2: CDMA (Modulation Set-up for ACPR Mode); The Baseband I and Q input signals were generated using the “9 channels
forward” settings in the Agilent E3844C (pilot, paging, sync and 6 traffic channels).
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3 / 495LP3E
MODULATORS - SMT
10
10 - 17
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Absolute Maximum Ratings
Vcc1, Vcc2, VB1, VB2 -0.5 to +6V
LO Input Power +10 dBm Max.
Baseband Input Voltage
(Reference to GND) -0.5 to +1.8V
Channel Temperature 150 °C
Continuous Pdiss (T = 85°C)
(Derate 43.5 mW/°C above 85°C) 2.83 Watts
Thermal Resistance (Rth)
(junction to lead) 23 °C/Watt
Storage Temperature -40 to +150 °C
Operating Temperature -40 to +85 °C
Outline Drawing
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC495LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 495
XXXX
HMC495LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 495
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST
BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
PCB LAND PATTERN.
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3 / 495LP3E
MODULATORS - SMT
10
10 - 18
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pin Number Function Description Interface Schematic
1, 4, 9, 12 GND These pins and the ground paddle must be connected to a
high quality RF/DC ground.
2, 3 LOP, LON
Differential LO input ports. This device may be driven in
either differential or single ended mode. In single ended
mode, one port should be driven by the LO source while
the other port may be terminated with a 50Ω resistor to
ground. An external shunt 68Ω resistor is used to improve
VSWR, while an external 100 pF capacitor is required
to prevent DC supply voltage from appearing on the
customer’s PC board.
5VB2
Bias Voltage for the LO stage. This voltage will affect the
Sideband Suppression, the Output Noise Floor and the
Power Consumption. The ideal voltage range for this port
is between +2.7 Vdc and +3.0 Vdc. The nominal current for
this port is 5.3 mA.
6, 7 Qn, Qp
Differential Quadrature baseband input. These are
high impedance ports. The nominal recommended bias
voltage is between 1.0 - 1.15V. The nominal recommended
baseband input voltage is 800 mV peak to peak differential.
By adjusting the DC bias voltage on ports Qn & Qp, the
Carrier Suppression of the device can be optimized for a
speci c frequency band and LO power level. The typical
offset voltage for optimization is less than 5 mV.
The amplitude and phase difference between the I and Q
inputs can be adjusted in order to optimize the Sideband
Suppression for a speci c frequency band
and LO power level.
8VB1
Bias Voltage for the output stage. This voltage should be
connected to the Vcc supply. Nominal supply voltage is 3.3
Vdc. The nominal current for this port is 2.4 mA.
10 N/C No connect.
11 RFP
RF Output port. This port is matched to 50Ω. A series
capacitor should be connected to this port in order to
prevent the DC supply voltage from appearing on the
customer’s PC board.
Pin Descriptions
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3 / 495LP3E
MODULATORS - SMT
10
10 - 19
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pin Descriptions (continued)
Pin Number Function Description Interface Schematic
13 Vcc1
Supply voltage for the mixer and output stages.
Set to 3.3V for nominal operation. The nominal
current for this port is 37 mA.
14, 15 Ip, In
Differential In-Phase baseband input. These are high
impedance ports. The nominal recommended bias voltage
is between 1.0 - 1.15V.The nominal recommened baseband
input voltage is 800 mV peak to peak differential. By
adjusting the DC bias voltage on ports In & Ip, the Carrier
Suppression of the device can be optimized for a speci c
frequency band and LO power level. The typical offset
voltage for optimization is less than 5 mV.
The amplitude and phase difference between the I and Q
inputs can be adjusted in order to optimize the Sideband
Suppression for a speci c frequency band
and LO power level.
16 Vcc2 Supply voltage for the LO stage. Set to 3.3V for nominal
operation. The nominal current for this port is 64 mA.
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3 / 495LP3E
MODULATORS - SMT
10
10 - 20
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Item Description
J1 - J8 PCB Mount SMA Connector
J9 - J12 DC Molex Connector
C1, C2, C7 100 pF Chip Capacitor, 0402 Pkg.
C3, C6, C8, C11 1000 pF Chip Capacitor, 0402 Pkg.
C4, C5, C9, C10 10 pF Chip Capacitor, 0402 Pkg.
C12 - C15 4.7 uF, Case A, Tantulum
R1, R2 68 Ohms, 0402 Pkg.
R3 62 Ohms, 0402 Pkg.
U1 HMC495LP3 / HMC495LP3E Modulator
PCB [2] 107309 Eval Board
[1] Reference this number when ordering complete evaulation PCB
[2] Circuit Board Material: Rogers 4350
Evaluation PCB
The circuit board used in the nal application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation circuit board shown is available from
Hittite upon request.
List of Materials for Evaluation PCB 107413 [1]
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3 / 495LP3E
MODULATORS - SMT
10
10 - 21
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Application & Evaluation PCB Schematic
Note:
Baseband input frequency range is dependent on value of C4, C5, C9 and C10. The value of 10 pF was chosen to give a typical
response of DC - 250 MHz. Input frequency range can be extended up to 1 GHz with possible degradation of LO leakage and
broadband noise oor response by decreasing the value of C4, C5, C9 & C10.
Characterization Set-up
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3 / 495LP3E
