Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com July 2004
The Communications Edge
AH215
1 Watt, High Linearity HBT Amplifier Product Information
Product Features
• 400 – 2300 MHz
• +31.5 dBm P1dB
• +46 dBm Output IP3
• 18 dB Gain @ 900 MHz
• Single Positive Supply (+5 V)
• SOIC-8 SMT Package
Applications
• Final stage amplifiers for
Repeaters
• Mobile Infrastructure
• Defense / Homeland Security
Product Description
The AH215 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve superior performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +31.5 dBm of compressed 1-dB power.
The part is housed in an industry standard SOIC-8 SMT
package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH215 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
Functional Diagram
Function Pin No.
Vref 1
Input 3
Output 6, 7
Vbias 8
GND Backside Paddle
N/C or GND 2, 4, 5
Specifications (1)
Parameters Units
Min Typ
Max
Test Frequency MHz 2140
Gain dB 10 11
Input Return Loss dB 18
Output Return Loss dB 8
Output P1dB dBm +29 +31.5
Output IP3 (2) dBm +43.8 +45
Noise Figure dB 6.3
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz dBm +26
W-CDMA Channel Power
@ -45 dBc ACPR, 2140 MHz dBm +23
Operating Current Range , Icc (3)
mA 400 450 500
Device Voltage, Vcc V 5
1. Test conditions unless otherwise noted: T = 25ºC, Vsupply = +5 V, Frequency = 2140 MHz in a
tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51 Ω. (ie. total device current
typically will be 461 mA.)
Typical Performance (4)
Parameters Units Typical
Frequency MHz 900 1960 2140
S21 – Gain dB 18 12 11
S11 dB -13 -11 -18
S22 dB -7 -10 -8
Output P1dB dBm +31 +32 +31.5
Output IP3 dBm +46 +46 +45
IS-95A Channel Power
@ -45 dBc ACPR dBm +25.5 +25.5
W-CDMA Channel Power
@ -45 dBc ACPR dBm +23
Noise Figure dB 7.0 5.5 6.2
Supply Bias +5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25° C.
Absolute Maximum Rating Ordering Information
Parameters Rating Part No. Description
Operating Case Temperature -40 to +85 °C AH215-S8 1 Watt, High Linearity InGaP HBT Amplifier
Storage Temperature -65 to +150 °C AH215-S8PCB900 900 MHz Evaluation Board
RF Input Power (continuous) +26 dBm AH215-S8PCB1960 1960 MHz Evaluation Board
Device Volt age +8 V AH215-S8PCB2140 2140 MHz Evaluation Board
Device Current 900 mA
Device Power 5 W
Operation of this device above any of these parameters may cause permanent damage.
2
3
4
7
6
5