LM113,LM313
LM113/LM313 Reference Diode
Literature Number: SNVS747
LM113/LM313
OBSOLETE
September 22, 2011
Reference Diode
General Description
The LM113/LM313 are temperature compensated, low volt-
age reference diodes. They feature extremely-tight regulation
over a wide range of operating currents in addition to an un-
usually-low breakdown voltage and good temperature stabil-
ity.
The diodes are synthesized using transistors and resistors in
a monolithic integrated circuit. As such, they have the same
low noise and long term stability as modern IC op amps. Fur-
ther, output voltage of the reference depends only on highly-
predictable properties of components in the IC; so they can
be manufactured and supplied to tight tolerances.
Features
■Low breakdown voltage: 1.220V
■Dynamic impedance of 0.3Ω from 500 μA to 20 mA
■Temperature stability typically 1% over−55°C to 125°C
range (LM113), 0°C to 70°C (LM313)
■Tight tolerance: ±5%, ±2% or ±1%
The characteristics of this reference recommend it for use
in bias-regulation circuitry, in low-voltage power supplies
or in battery powered equipment. The fact that the
breakdown voltage is equal to a physical property of silicon
—the energy-band gap voltage—makes it useful for many
temperature-compensation and temperature-
measurement functions.
Schematic and Connection
Diagrams
571320
Metal Can Package
571321
Order Number LM113H, LM113H/883, LM113-1H, LM113-1H/883, LM113-2H, LM113-2H/883 or LM313H
See NS Package Number H02A
© 2011 National Semiconductor Corporation 5713 www.national.com
5713 Version 2 Revision 4 Print Date/Time: 2011/09/22 11:01:06
LM113/LM313 Reference Diode
Typical Applications
Level Detector for Photodiode
571315
Low Voltage Regulator
571316
†Solid tantalum.
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5713 Version 2 Revision 4 Print Date/Time: 2011/09/22 11:01:06
LM113/LM313
Absolute Maximum Ratings (Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Dissipation (Note 1) 100 mW
Reverse Current 50 mA
Forward Current 50 mA
Storage Temperature Range −65°C to +150°C
Lead Temperature
(Soldering, 10 seconds) 300°C
Operating Temperature Range
LM113 −55°C to+125°C
LM313 0°C to +70°C
Electrical Characteristics (Note 2)
Parameter Conditions Min Typ Max Units
Reverse Breakdown Voltage
LM113/LM313 IR = 1 mA 1.160 1.220 1.280 V
LM113-1 1.210 1.22 1.232 V
LM113-2 1.195 1.22 1.245 V
Reverse Breakdown Voltage 0.5 mA ≤ IR ≤ 20 mA 6.0 15 mV
Change
Reverse Dynamic Impedance IR = 1 mA 0.2 1.0 Ω
IR = 10 mA 0.25 0.8 Ω
Forward Voltage Drop IF = 1.0 mA 0.67 1.0 V
RMS Noise Voltage 10 Hz ≤ f ≤ 10 kHz 5 μV
IR = 1 mA
Reverse Breakdown Voltage 0.5 mA ≤ IR ≤ 10 mA 15 mV
Change with Current TMIN ≤ TA ≤ TMAX
Breakdown Voltage Temperature 1.0 mA ≤ IR ≤ 10 mA 0.01 %/°C
Coefficient TMIN ≤ TA ≤ TMAX
Note 1: For operating at elevated temperatures, the device must be derated based on a 150°C maximum junction and a thermal resistance of 80°C/W junction
to case or 440°C/W junction to ambient.
Note 2: These specifications apply for TA = 25°C, unless stated otherwise. At high currents, breakdown voltage should be measured with lead lengths less than
¼ inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances between 200 pF and 0.1 μF, unless isolated
by at least a 100Ω resistor, as it may oscillate at some currents.
Note 3: Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for LM113.
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5713 Version 2 Revision 4 Print Date/Time: 2011/09/22 11:01:06
LM113/LM313
Typical Performance Characteristics
Temperature Drift
571306
Reverse Dynamic Impedance
571307
Reverse Characteristics
571308
Reverse Characteristics
571309
Reverse Dynamic Impedance
571310
Noise Voltage
571311
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5713 Version 2 Revision 4 Print Date/Time: 2011/09/22 11:01:06
LM113/LM313
Forward Characteristics
571312
Response Time
571313
Maximum Shunt Capacitance
571314
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5713 Version 2 Revision 4 Print Date/Time: 2011/09/22 11:01:06
LM113/LM313
Typical Applications
Amplifier Biasing for Constant Gain with Temperature
571317
Constant Current Source
571318
Thermometer
571319
Adjust for 0V at 0°C
Adjust for 100 mV/°C
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5713 Version 2 Revision 4 Print Date/Time: 2011/09/22 11:01:06
LM113/LM313
Physical Dimensions inches (millimeters) unless otherwise noted
Order Number LM113H, LM113H/883, LM113-1H, LM113-1H/883,
LM113-2H, LM113-2H/883 or LM313H
NS Package Number H02A
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5713 Version 2 Revision 4 Print Date/Time: 2011/09/22 11:01:06
LM113/LM313
Notes
LM113/LM313 Reference Diode
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