Preliminary Technical Information IXTA80N10T7 TrenchMVTM Power MOSFET VDSS ID25 RDS(on) = 100 V = 80 A 14 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M 100 100 V V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, pulse width limited by TJM 80 220 A A IAR EAS TC = 25C TC = 25C 25 400 A mJ dv/dt IS IDM, di/dt 100 A/s, VDD VDSS 3 V/ns 230 W -55 ... +175 175 -55 ... +175 C C C 300 260 C C 3 g TJ 175C, RG = 15 PD TC = 25C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Weight TO-263 (7-lead) (IXTA..7) 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 C Operating Temperature Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 100 VGS(th) VDS = VGS, ID = 100 A 2.5 IGSS VGS = 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 25 A, Note 1 V TJ = 150C 11.5 4.5 V 200 nA 5 150 A A 14 m Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier DS99706 (11/06) (c) 2006 IXYS CORPORATION All rights reserved IXTA80N10T7 Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) gfs VDS= 10 V; ID = 40 A, Note 1 Typ. 33 55 S 3040 pF Ciss Coss TO-263 (7-lead) (IXTA 7) Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz Max. 420 pF 90 pF Crss td(on) Resistive Switching Times 31 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A 54 ns td(off) RG = 15 (External) 40 ns tf 48 ns Qg(on) 60 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 21 nC 15 nC 0.65 C/W RthJC Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain Source-Drain Diode Symbol Test Conditions TJ = 25C unless otherwise specified) IS VGS = 0 V ISM Characteristic Values Min. Typ. Max. 80 A Pulse width limited by TJM 220 A VSD IF = 25 A, VGS = 0 V, Note 1 1.1 V t rr IF = 25 A, -di/dt = 100 A/s 100 ns VR = 25 V, VGS = 0 V Notes: 1. Pulse test, t 300 s, duty cycle d 2 %. PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTA80N10T7 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 250 80 V GS = 10V V GS = 10V 9V 8V 70 225 200 9V 60 I D - Amperes I D - Amperes 175 50 40 7V 30 150 8V 125 100 75 7V 20 50 6V 10 25 6V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 12 14 16 18 20 Fig. 4. R DS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150C 80 2.8 V GS = 10V 9V 8V 70 2.4 R DS(on) - Normalized 50 7V 40 V GS = 10V 2.6 60 I D - Amperes 10 V DS - Volts V DS - Volts 30 6V 20 2.2 2.0 1.8 I D = 80A 1.6 I D = 40A 1.4 1.2 1.0 10 5V 0.8 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 Fig. 5. R DS(on) Normalized to ID = 40A Value v s. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 90 4.6 4.2 V GS = 10V 15V - - - - 80 TJ = 175C 3.8 70 3.4 ID - Amperes R DS(on) - Normalized 25 T J - Degrees Centigrade V DS - Volts 3 2.6 2.2 60 50 40 30 1.8 20 1.4 1 10 TJ = 25C 0 0.6 0 25 50 75 100 125 150 175 I D - Amperes (c) 2006 IXYS CORPORATION All rights reserved 200 225 250 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 175 IXTA80N10T7 Fig. 8. Transconductance Fig. 7. Input Admittance 140 80 120 70 25C 60 g f s - Siemens 100 I D - Amperes TJ = - 40C 80 60 TJ = 150C 25C - 40C 40 50 150C 40 30 20 20 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 0 8 20 40 VGS - Volts 60 80 100 120 140 160 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 250 10 225 9 VDS = 50V 200 8 I D = 25A 175 7 VGS - Volts IS - Amperes I G = 10mA 150 125 100 TJ = 150C 75 6 5 4 3 TJ = 25C 50 2 25 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 0 10 VSD - Volts 20 30 40 50 60 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Capacitance - PicoFarads f = 1 MHz C iss Z(th)JC - C / W 1,000 C oss 100 0.10 C rss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA80N10T7 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 70 70 RG = 15 RG = 15 65 V GS = 10V 65 V GS = 10V 60 t r - Nanoseconds t r - Nanoseconds V DS = 50V 55 I D = 30A 50 TJ = 25C V DS = 50V 45 60 55 50 45 TJ = 125C I D = 10A 40 40 35 35 25 35 45 55 65 75 85 95 105 115 125 10 12 14 16 18 T J - Degrees Centigrade 90 220 TJ = 125C, V GS = 10V 85 200 V DS = 50V I D = 30A 80 70 140 65 120 60 I D = 10A 55 80 50 60 45 40 40 20 0 35 40 45 50 76 48 72 td(off) - - - - tf 46 45 60 44 56 43 48 41 44 35 40 40 30 39 25 35 65 75 85 95 105 115 36 125 td(off) - - - - 250 70 140 TJ = 125C, V GS = 10V 230 66 130 62 58 44 54 TJ = 125C - Nanoseconds 45 46 41 42 40 38 60 39 34 50 38 30 40 26 I D - Amperes (c) 2006 IXYS CORPORATION All rights reserved 28 30 190 170 I D = 10A 100 42 24 210 110 50 22 V DS = 50V 120 43 TJ = 25C 270 150 90 130 80 110 70 90 d ( o f f ) - Nanoseconds 46 tf t f - Nanoseconds V DS = 50V 150 t 47 160 74 d(off) t f - Nanoseconds 55 78 t 48 RG = 15, V GS = 10V 20 45 Fig. 18. Resistive Turn-off Switching Times v s. Gate Resistance td(off) - - - - tf 18 52 I D = 30A T J - Degrees Centigrade 49 16 64 42 55 50 14 I D = 10A V DS = 50V Fig. 17. Resistiv e Turn-off Switching Times v s. Drain Current 12 68 RG =15, V GS = 10V R G - Ohms 10 30 d ( o f f ) - Nanoseconds 75 160 d ( o n ) - Nanoseconds 180 30 28 49 47 t f - Nanoseconds td(on) - - - - 25 26 t tr t t r - Nanoseconds 95 240 20 24 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 260 15 22 I D - Amperes Fig. 15. Resistiv e Turn-on Switching Times vs. Gate Resistance 100 20 70 I D = 30A 50 30 15 20 25 30 35 40 45 50 55 R G - Ohms IXYS REF: T_80N10T (3V) 6-21-06.xls