VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (MAGN-A-PAK Power Modules), 250 A to 320 A FEATURES * High voltage * Electrically isolated base plate * 3000 VRMS isolating voltage * Industrial standard package * Simplified mechanical designs, rapid assembly * High surge capability * Large creepage distances * UL approved file E78996 * Designed and qualified for industrial level * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MAGN-A-PAK DESCRIPTION / APPLICATIONS This VS-VSK series of MAGN-A-PAKs uses high voltage power diodes in two basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges and the single diode module can be used in conjunction with the thyristor modules as a freewheel diode. PRIMARY CHARACTERISTICS IF(AV) 250 A to 320 A Type Modules - diode, high voltage Package MAGN-A-PAK Circuit configuration Two diodes doubler circuit, two diodes common cathode, single diode These modules are intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required (motor drives, etc.) MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS I2t I2t VRRM VSK.270.. UNITS 250 270 320 A 100 100 100 C 393 424 502 50 Hz 7015 8920 10 110 60 Hz 7345 9430 10 580 A 50 Hz 246 398 511 60 Hz 225 363 466 2460 3980 5110 kA2s 400 to 2000 400 to 3000 400 to 2000 V -40 to +150 TJ Revision: 12-Nov-2018 VSK.320.. TC IF(RMS) IFSM VSK.250.. 1 kA2s C Document Number: 93581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 VS-VSK.250 VS-VSK.270 VS-VSK.320 VS-VSK.270 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 30 3000 3100 IRRM MAXIMUM AT 150 C mA 50 FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current Maximum peak, one-cycle forward, non-repetitive surge current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 320 A 100 100 100 C As AC switch 393 424 502 t = 10 ms 7015 8920 10 110 7345 9340 10 580 5900 7500 8500 6180 7850 8900 246 398 511 225 363 466 174 281 361 159 257 330 t = 0.1 ms to 10 ms, no voltage reapplied 2460 3980 5110 t = 10 ms t = 10 ms t = 8.3 ms I2t t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.79 0.74 0.69 High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 0.92 0.87 0.86 Low level forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.63 0.94 0.59 High level forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.49 0.81 0.44 IFM = x IF(AV), TJ = TJ maximum, 180 conduction Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 1.29 1.48 1.28 VFM A kA2s Low level value of threshold voltage Maximum forward voltage drop UNITS 270 t = 8.3 ms Maximum I2t for fusing VSK.250 VSK.270 VSK.320 250 180 conduction, half sine wave t = 8.3 ms IFSM VALUES kA2s V m V BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse leakage current IRRM TJ = 150 C RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, t = 1 s Revision: 12-Nov-2018 2 VALUES UNITS 50 mA 3000 V Document Number: 93581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range VALUES TEST CONDITIONS VSK.250 TJ, TStg RthJC DC operation Maximum resistance, case to heat sink per module RthCS Mounting surface flat, smooth and greased 0.16 Busbar to MAGN-A-PAK 0.125 UNITS C 0.125 K/W 0.035 A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. MAGN-A-PAK to heatsink VSK.320 -40 to +150 Maximum thermal resistance, junction to case per junction Mounting torque 10 % VSK.270 4 to 6 Nm 8 to 10 Approximate weight Case style 800 g 30 oz. MAGN-A-PAK R CONDUCTION PER JUNCTION RECTANGULAR CONDUCTION AT TJ MAXIMUM SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICE 180 120 90 60 30 180 120 90 60 UNITS 30 VSK.250 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.021 0.033 VSK.270 0.008 0.012 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033 VSK.320 0.008 0.010 0.013 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 12-Nov-2018 3 Document Number: 93581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series Vishay Semiconductors 150 VSK.250.. Series R thJC (DC) = 0.16 K/ W 140 130 Conduction Angle 120 110 100 30 60 90 90 120 180 80 0 50 100 150 200 250 300 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (C) www.vishay.com 300 180 120 90 60 30 250 200 RMSLimit 150 100 Conduc tion Angle 50 VSK.250.. Series T J = 150C 0 0 130 Conduction Period 110 30 60 100 90 120 90 180 DC 80 0 50 150 200 250 450 Maximum Average Forward Power Loss (W) VSK.250.. Series R thJC (DC) = 0.16 K/ W 120 100 Fig. 3 - Forward Power Loss Characteristics 150 100 150 200 250 300 350 400 DC 180 120 90 60 30 400 350 300 250 200 RMSLimit 150 Conduction Period 100 VSK.250.. Series TJ= 150C 50 0 0 50 100 150 200 250 300 350 400 Average Forward Current (A) Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 4 - Forward Power Loss Characteristics 600 = 02 0. W K/ ta el -D 180 (Sine) 400 A 0. 08 K/ 0. W 12 K/ W 500 S R th 0.2 K/ W R Maximum Tota l Forward Power Loss (W) Maximum Allowable Case Temperature (C) Fig. 1 - Current Ratings Characteristics 140 50 Average Forward Current (A) Average Forward Current (A) 300 DC 0.2 5 K/ W 0.4 K/ W 200 0.6 K / VSK.250.. Series Per Junc tion TJ = 150C 100 W 0 0 50 100 150 200 250 300 350 400 0 Total RMSOutput Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (C) Fig. 5 - Forward Power Loss Characteristics Revision: 12-Nov-2018 4 Document Number: 93581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors A R t hS K/ W .01 =0 K/ W K/ W W K/ 800 0. 1 /W 3K 0.0 0. 08 180 (Sine) 180 (Rec t) 1000 05 0. 0.1 6K /W 600 e lt -D 0.2 5K /W aR Ma ximum Total Power Lo ss (W) 1200 400 2 x VSK.250.. Series Single Phase Brid ge Connec ted TJ = 150C 200 0.35 K/ W 0 0 100 200 300 400 Total Output Current (A) 0 500 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (C) Fig. 6 - Forward Power Loss Characteristics 0.1 2 0.25 K/ W 3 x VSK.250.. Series Three Phase Brid ge Connec ted TJ = 150C 400 200 aR 600 e lt -D K/ W 0.1 6K /W 800 /W 5K .00 =0 1000 K/ W SA 120 (Rec t) R th 1200 K/ W W K/ 0. 08 W K/ 0. 06 1400 2 0.0 1600 04 0. Maximum Total Power Loss (W) 1800 0.35 K /W 0 0 100 200 300 400 500 600 700 800 0 Total Outp ut Current (A) 25 50 75 100 125 150 Maximum Allowab le Ambient Temp era ture (C) 6500 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 7 - Forward Power Loss Characteristics At Any Ra ted Loa d Cond ition And With Rated VRRM Ap p lied Following Surge. Initia l T J = 150C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6000 5500 5000 4500 4000 3500 3000 2500 VSK.250.. Series Per Junc tion 2000 1500 1 10 100 6500 6000 5500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J = 150C No Voltage Reapp lied Ra ted V RRM Rea pplied 5000 4500 4000 3500 3000 2500 2000 1500 0.01 VSK.250.. Series Per Junc tion 0.1 1 Pulse Train Duration (s) Numb er Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 8 - Maximum Non-Repetitive Surge Current Revision: 12-Nov-2018 7000 Fig. 9 - Maximum Non-Repetitive Surge Current 5 Document Number: 93581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Maximum Allowable Case Temperature (C) Vishay Semiconductors 10000 Instantaneous Forward Current (A) TJ= 25C TJ= 150C 1000 100 VSK.250.. Series Per Junc tion 10 0.5 1 1.5 2 2.5 3 3.5 4 150 VSK.270.. Series R thJC (DC) = 0.125 K/ W 140 130 120 Conduction Period 110 30 100 90 60 90 120 180 DC 80 0 100 200 300 400 500 Average Forward Current (A) Fig. 10 - Forward Voltage Drop Characteristics Fig. 13 - Current Ratings Characteristics 1 Maximum Average Forward Power Loss (W) Transient Thermal Impedanc e Z thJC (K/ W) Instantaneous Forward Voltage (V) Steady State Value: R thJC = 0.16 K/ W (DC Operation) 0.1 0.01 VSK.250.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100 400 350 180 120 90 60 30 300 250 RMS Limit 200 150 Conduc tion Angle 100 VSK.270.. Series TJ= 150C 50 0 0 50 100 150 200 250 300 Average Forward Current (A) Fig. 11 - Thermal Impedance ZthJC Characteristics Fig. 14 - Forward Power Loss Characteristics 150 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (C) Square Wave Pulse Duration (s) VSK.270.. Series R thJC (DC) = 0.125 K/ W 140 130 Conduction Angle 120 110 30 100 60 90 90 120 180 80 0 50 100 150 200 250 300 500 DC 180 400 120 90 350 60 30 300 450 RMS Limit 250 200 150 Conduction Period 100 VSK.270.. Series TJ= 150C 50 0 0 50 100 150 200 250 300 350 400 450 Average Forward Current (A) Average Forward Current (A) Fig. 12 - Current Ratings Characteristics Fig. 15 - Forward Power Loss Characteristics Revision: 12-Nov-2018 6 Document Number: 93581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors W K/ K/ W ta el -D 0.1 6K /W R 180 (Sine) 400 02 0. 500 K/ W = 0. 1 SA th 0. 06 600 R Maximum Total Forwa rd Power Loss (W) 700 0.2 5 K/ W 0.3 K/ W DC 300 0. 4 K/ W 200 0.6 K / VSK.270.. Series Per Junc tion TJ = 150C 100 W 0 0 50 0 100 150 200 250 300 350 400 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (C) Total RMSOutput Current (A) Fig. 16 - Forward Power Loss Characteristics A thS = W K/ 02 0. ta el -D 0.25 K/ 2 x VSK.270.. Series Single Phase Bridge Connec ted TJ = 150C R 0.1 2K /W 0.1 6K /W 600 200 K/ W 0.0 8K /W 800 400 R 1000 W K/ 180 (Sine) 180 (Rec t) 1200 W K/ 0. 06 1400 3 0. 1600 04 0. Maximum Total Power Loss (W) 1800 W 0.4 K/ W 0.6 K/ W 0 0 100 200 300 400 500 Total Output Current (A) 600 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (C) Fig. 17 - Forward Power Loss Characteristics 0. 04 2100 K/ W 02 0. 1800 = A hS R t 0. 06 K/ W 0.1 900 R 120 (Rec t) 1200 K/ W 0.16 3 x VSK.270.. Series Three Phase Bridge Connec ted T J= 150C 600 300 ta el -D 1500 W K/ Maximum Total Power Loss (W) 2400 K/ W 0.25 K/ W 0.4 K/ W 0.6 K/ W 0 0 200 400 600 Total Output Current (A) 800 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (C) Fig. 18 - Forward Power Loss Characteristics Revision: 12-Nov-2018 7 Document Number: 93581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series Vishay Semiconductors 8000 Transient Thermal Impedance Z thJC (K/ W) Peak Half Sine Wave Forward Current (A) www.vishay.com At Any Ra ted Load Cond ition And With Ra ted VRRM Ap plied Following Surge. Initial T J = 150C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 7000 6000 5000 4000 3000 VSK.270.. Series Per Junc tion 2000 1 10 100 1 Steady State Value: R thJC = 0.45 K/ W (DC Operation) 0.1 0.01 VSK.270.. Series Per Junction 0.001 0.001 7000 Ma ximum Non Rep etitive Surge Current Versus Pulse Train Dura tion. Initia l TJ = 150C No Voltage Reap plied Rated V RRM Rea p plied 6000 5000 4000 3000 VSK.270.. Series Per Junction 2000 0.01 0.1 1 VSK.320.. Series R thJC (DC) = 0.125 K/ W 140 130 Conduction Angle 120 110 30 60 100 90 120 90 180 80 0 Maximum Allowa ble Case Temperature (C) Instantaneous Forward Current (A) TJ= 25C TJ= 150C 100 VSK.270.. Series Per Junc tion 1.5 2 2.5 3 3.5 4 Instantaneous Forward Voltage (V) 100 150 200 250 300 350 150 VSK.320.. Series R thJC (DC) = 0.125 K/ W 140 130 120 Conduc tion Period 110 30 60 90 100 120 180 90 DC 80 0 100 200 300 400 500 600 Average Forward Current (A) Fig. 21 - Forward Voltage Drop Characteristics Revision: 12-Nov-2018 50 Fig. 23 - Current Ratings Characteristics 10000 1 100 Average Forward Current (A) Fig. 20 - Maximum Non-Repetitive Surge Current 10 0.5 10 150 Pulse Train Dura tion (s) 1000 1 Fig. 22 - Thermal Impedance ZthJC Characteristics Maximum Allowable Case Temp erature (C) Peak Half Sine Wave Forward Current (A) Fig. 19 - Maximum Non-Repetitive Surge Current 8000 0.1 Square Wave Pulse Duration (s) Numb er Of Equal Amplitude Half Cyc le Current Pulses (N) 9000 0.01 Fig. 24 - Current Ratings Characteristics 8 Document Number: 93581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series Vishay Semiconductors 400 180 120 90 60 30 350 300 250 RMSLimit 200 150 Conduction Angle 100 VSK.320.. Series TJ = 150C 50 0 0 50 100 150 200 250 300 500 Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) www.vishay.com 350 DC 180 120 90 60 30 450 400 350 300 250 RMS Limit 200 Conduc tion Period 150 VSK.320.. Series Per Junction TJ = 150C 100 50 0 0 100 Average Forward Current (A) 200 300 400 500 600 Average Forward Current (A) Fig. 25 - Forward Power Loss Characteristics Fig. 26 - Forward Power Loss Characteristics = 02 0. K/ W W K/ 180 (Sine) 500 K/ W SA th 0. 1 W K/ 0. 06 600 R 04 0. 0.1 6K /W 0.2 K/ W DC R 400 ta el -D Maximum Total Forward Power Loss (W) 700 0.3 K/ W 0.4 K/ W 300 200 0.6 K/ W VSK.320.. Series Per Junc tion TJ = 150C 100 0 0 100 200 300 400 Total RMSOutput Current (A) 500 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (C) Fig. 27 - Forward Power Loss Characteristics 50 75 K/ W a R 600 elt -D 0.1 6 W K/ .02 =0 800 0. 12 K/ W SA 1000 R th 180 (Sine) 180 (Rec t) /W 3K 0.0 W K/ 04 0. W K/ 0. 08 1200 06 0. Maximum Total Power Loss (W) 1400 K/ W 0.25 K/ W 400 0.5 K / 2 x VSK.320.. Series Single Phase Bridge Connec ted T J = 150C 200 W 0. 6 K/ W 0 0 100 200 300 400 500 Total Output Current (A) 600 0 25 100 125 150 Maximum Allowable Ambient Temperature (C) Fig. 28 - Forward Power Loss Characteristics Revision: 12-Nov-2018 9 Document Number: 93581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors h Rt 3 x VSK.320.. Series Three Phase Bridge Connected TJ = 150C 400 R 0.1 2 800 ta el -D 1200 W K/ 120 (Rec t) 1600 02 0. 0. 04 K/ W 0. 05 K/ W 0.0 6K /W 0.0 8K /W 2000 = W K/ 2400 SA 03 0. Maximum Total Power Loss (W) 2800 K/ W 0.2 K / W 0.3 K/ W 0.6 K/ W 0 0 200 400 600 800 Total Output Current (A) 1000 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (C) 10000 10000 At Any Ra ted Load Condition And With Rated VRRM App lied Following Surge. Initial TJ = 150C @60 Hz 0.0083 s @50 Hz 0.0100 s 9000 8000 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 29 - Forward Power Loss Characteristics 7000 6000 5000 4000 VSK.320.. Series Per Junc tion 3000 10 TJ= 150C 1000 VSK.320.. Series Per Junc tion 100 0.5 2000 1 TJ= 25C 100 9000 8000 Ma ximum Non Rep etitive Surge Current Versus Pulse Train Dura tion. Initial TJ = 150C No Vo ltage Reap plied Rated VRRM Reap plied 7000 6000 5000 4000 3000 VSK.320.. Series Per Junc tio n 2000 0.01 0.1 1 Pulse Train Dura tion (s) 2 2.5 3 3.5 4 1 Steady State Value: RthJC = 0.45 K/ W (DC Operation) 0.1 0.01 VSK.320.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 31 - Maximum Non-Repetitive Surge Current Revision: 12-Nov-2018 1.5 Fig. 32 - Forward Voltage Drop Characteristics Transient Thermal Impedanc e Z thJC (K/W) Peak Half Sine Wave Forward Current (A) Fig. 30 - Maximum Non-Repetitive Surge Current 10000 1 Instantaneous Forward Voltage (V) Numb er Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 33 - Thermal Impedance ZthJC Characteristics 10 Document Number: 93581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS-VS KD 320 1 2 3 - 24 PbF 4 5 1 - Vishay Semiconductors product 2 - Circuit configuration (see Circuit Configuration table) 3 - Current rating: IF(AV) rounded 4 - Voltage code x 100 = VRRM (see Voltage Ratings table) 5 - Lead (Pb)-free CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKD... Two diodes doubler circuit - + ~ KD - + ~ VSKC... + Two diodes common cathode - - KC + - - VSKE... + Single diode - KE + - LINKS TO RELATED DOCUMENTS Dimensions Revision: 12-Nov-2018 www.vishay.com/doc?95086 11 Document Number: 93581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MAGN-A-PAK DIMENSIONS in millimeters (inches) O 5.5 35 (1.38) 20 (0.79) 80 (3.15) 50 (1.97) 38 (1.5) 6 (0.24) 3 screws M8 x 1.25 28 (1.12) 6 (0.24) 9 (0.35) 10 (0.39) HEX 13 52 (2.04) 51 (2.01) 32 (1.26) 115 (4.53) 92 (3.62) Notes * Dimensions are nominal * Full engineering drawings are available on request * UL identification number for gate and cathode wire: UL 1385 * UL identification number for package: UL 94 V-0 Document Number: 95086 Revision: 03-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VSKE270-08 VSKJ320-12 VSKJ250-08 VSKH250-08 VSKL250-08 VSKD250-20 VSKC320-20 VSKH250-04 VSKD270-08 VSKD320-20 VSKL250-16D25 VSKE320-20 VSKE320-04 VSKJ320-08 VSKC320-08 VSKJ320-04 VSKJ270-12 VSKC320-04 VSKL250-14D20 VSKD320-08 VSKE320-08 VSKE250-20 VSKJ320-16 VSKD320-04 VSKH250-16D25 VSKH250-14D20 VSKT250-14 VSKD320-12 VSKE320-16 VSKD270-30 VSKC320-12 VSKD32016 VSKE320-12 VSKD270-16 VSKE270-12 VSKL250-12 VSKL250-16 VSKD270-12 VSKE270-16 VSKE270-20 VSKD250-08 VSKE250-04 VSKC250-16 VSKT250-12 VSKT250-16 VSKT250-04 VSKJ320-20 VSKT250-08 VSKL250-14 VSKD250-16 VSKE250-12 VSKD250-04 VSKJ250-16 VSKH250-16 VSKC270-12 VSKH250-14 VSKH250-12 VSKE250-16 VSKC250-08 VSKD250-12 VSKC250-12 VSKE250-08 VS-VSKC320-20PBF VSVSKD270-04PBF VS-VSKC250-08PBF VS-VSKC320-12PBF VS-VSKC320-16PBF VS-VSKD270-16PBF VSVSKD250-08PBF VS-VSKD250-20PBF VS-VSKE320-08PBF VS-VSKE250-08PBF VS-VSKE270-12PBF VSVSKE320-16PBF VS-VSKJ320-08PBF VS-VSKJ320-04PBF VS-VSKJ320-16PBF VS-VSKJ320-12PBF IRKC250-08 IRKC250-12 IRKC250-16 IRKC270-12 IRKC320-04 IRKC320-08 IRKC320-12 IRKC320-20 IRKD250-04 IRKD250-08 IRKD250-12 IRKD250-16 IRKD250-20 IRKD270-08 IRKD270-12 IRKD270-16 IRKD270-30 IRKD32004 IRKD320-08 IRKD320-12 IRKD320-16 IRKD320-20