2N3251A Transistors Si PNP LP HF BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (oC)175o I(CBO) Max. (A)20nO/ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300 @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)1.0 f(T) Min. (Hz) Transition Freq300M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V)250m @I(C) (A) (Test Condition)10m @I(B) (A) (Test Condition)1.0m h(fe) Min. SS Current gain.100oY @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)1.0