AON7532E
30V N-Channel AlphaMOS
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 28A
R
DS(ON)
(at V
GS
=10V) < 3.5mΩ
R
DS(ON)
(at V
GS
=4.5V) < 5.5mΩ
Typical ESD protection
HBM Class 2
Application
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low R
DS(ON)
at 4.5V V
GS
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
• DC/DC Converters
30
30V
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Drain-Source Voltage
Top View
1
2
3
4
8
7
6
5
DFN 3x3 EP
Top View Bottom View
Pin 1
G
D
S
V
DS
V
GS
I
DM
I
AS
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
3.6 55
4.4
Power Dissipation
B
11
T
C
=100°C
100ns
P
D
112Pulsed Drain Current
C
I
DSM
T
C
=25°C
30
V±20Gate-Source Voltage
Units
Junction and Storage Temperature Range -55 to 150
mJ51
Typ
P
DSM
W
T
A
=70°C 3.2
T
A
=25°C 5
36
28
Power Dissipation
A
28
21 A
T
A
=25°C
W
I
D
V
A45
Avalanche energy L=0.05mH
C
A
T
A
=70°C
T
C
=25°C
T
C
=100°C
Maximum Junction-to-Ambient
A
°C/W
R
θJA
20
45 25
°C
Thermal Characteristics
Parameter
V
Max
Drain-Source Voltage
24
Avalanche Current
C
Continuous Drain
Current
G
Continuous Drain
Current 30.5
Rev.1.0 August 2013
www.aosmd.com Page 1 of 6
AON7532E
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=125°C 5
I
GSS
±10 µA
V
GS(th)
Gate Threshold Voltage 1.4 1.8 2.2 V
2.9 3.5
T
J
=125°C 4.1 5
4.4 5.5 mΩ
g
FS
70 S
V
SD
0.7 1 V
I
S
28 A
C
iss
1950 pF
C
oss
810 pF
C
rss
95 pF
R
g
1.1 2.3 3.5 Ω
Q
g
(10V) 28 40 nC
Q
g
(4.5V) 12.8 20 nC
Q
gs
7 nC
Q
gd
4.8 nC
t
D(on)
8 ns
t
r
6 ns
t
28
ns
Forward Transconductance
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=10V, I
D
=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
G
Input Capacitance
Gate-Body leakage current
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=16A
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
Reverse Transfer Capacitance V
GS
=0V, V
DS
=15V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
Output Capacitance
Turn-On Rise Time
Turn-Off DelayTime
SWITCHING PARAMETERS
Turn-On DelayTime V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
=3
Ω
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
I
DSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage ID=250µA, V
GS
=0V
V
GS
=10V, V
DS
=15V, I
D
=20A
Total Gate Charge
t
D(off)
28
ns
t
f
9 ns
t
rr
17.5 ns
Q
rr
34.5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
Turn-Off Fall Time
R
GEN
=3
Ω
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev. 1.0 August 2013 www.aosmd.com Page 2 of 6
AON7532E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
1
2
3
4
5
6
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=16A
VGS=10V
ID=20A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=3V
3.5V
4.5V
10V
4V
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
2
4
6
8
10
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev. 1.0 August 2013 www.aosmd.com Page 3 of 6
AON7532E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20 25 30
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
100
200
300
400
500
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Coss
C
rss
VDS=15V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
10µs
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
10ms
(Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
RθJC=4.4°C/W
Rev. 1.0 August 2013 www.aosmd.com Page 4 of 6
AON7532E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 12: Power De-rating (Note F)
0
10
20
30
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°
°°
°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
TA=25°C
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
RθJA=55°C/W
Rev. 1.0 August 2013 www.aosmd.com Page 5 of 6
AON7532E
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev. 1.0 August 2013 www.aosmd.com Page 6 of 6
