AON7532E
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=125°C 5
I
GSS
±10 µA
V
GS(th)
Gate Threshold Voltage 1.4 1.8 2.2 V
2.9 3.5
T
J
=125°C 4.1 5
4.4 5.5 mΩ
g
FS
70 S
V
SD
0.7 1 V
I
S
28 A
C
iss
1950 pF
C
oss
810 pF
C
rss
95 pF
R
g
1.1 2.3 3.5 Ω
Q
g
(10V) 28 40 nC
Q
g
(4.5V) 12.8 20 nC
Q
gs
7 nC
Q
gd
4.8 nC
t
D(on)
8 ns
t
r
6 ns
Forward Transconductance
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=10V, I
D
=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
Input Capacitance
Gate-Body leakage current
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=16A
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
Reverse Transfer Capacitance V
GS
=0V, V
DS
=15V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
Output Capacitance
Turn-On Rise Time
SWITCHING PARAMETERS
Turn-On DelayTime V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
I
DSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage ID=250µA, V
GS
=0V
V
GS
=10V, V
DS
=15V, I
D
=20A
Total Gate Charge
D(off)
t
f
9 ns
t
rr
17.5 ns
Q
rr
34.5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
Turn-Off Fall Time
GEN
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev. 1.0 August 2013 www.aosmd.com Page 2 of 6