Voltage Controlled Oscillator
5.458 - 6.129 GHz
Rev. V3
MAOC-011030
2
2
2
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Electrical Specifications: TA = +25°C, VCC = 5.0V3, Z0 = 50 Ω
Parameter Test Conditions Units Min. Typ. Max.
Output Power RF Port, 5.458 - 6.129 GHz
RF/2 Port, 2.729 - 3.0645 GHz dBm 10
0
14
4 —
SSB Phase Noise RF Port, 10 KHz Offset, 5.458 - 6.129 GHz
RF Port, 100 KHz Offset, 5.458 - 6.129 GHz dBc/Hz — -93
-117
—
-105
Harmonics/Subharmonics
VCC=VBUFFER=VTUNE=5V
RF Port, 1/2 Fo
RF Port, 2 Fo dBc — -27
-20 —
Pulling
(Sensitivity to Match)
VCC=VBUFFER=VTUNE=5V
RF Port, VSWR = 1.95:1 to 2.25:1 MHz pk-pk — 6.7 —
Pushing
(Sensitivity to Supply Voltage)
RF Port, VTUNE = 5 V
RF/2 Port, VTUNE = 5 V MHz/V — 10
5 —
Frequency Drift Rate
(Sensitivity to Temperature)
RF Port, 5.458 - 6.129 GHz
RF/2 Port, 2.729 - 3.0645 GHz MHz/ºC — 0.5
0.25 —
Output Return Loss RF Port, 5.458 - 6.129 GHz
RF/2 Port, 2.729 - 3.0645 GHz dB — 5
11 —
Tuning Sensitivity @ RF Port VTUNE = 5 V GHz/V — 0.13 —
Supply Current
I TOTAL (ICC + IBUFFER)
ICC
IBUFFER
mA
—
—
—
185
165
20
205
175
30
Tune Voltage VTUNE V 1.0 — 12.5
Tuning Current Leakage VTUNE = 13 V µA — 5 10
3. VCO can operate over the 4.75 V to 5.25 V supply voltage range.
Absolute Maximum Ratings 4,5,6
Parameter Absolute Maximum
Supply Voltage
(VCC & VBUFFER) +5.5 Vdc
VTUNE 0 to +15 Vdc
Storage Temperature -55ºC to +150ºC
Operating Temperature -40ºC to +85ºC
Case Temperature (TC)
(measured @ exposed pad) +100ºC
Junction Temperature7 +135ºC
ESD Rating: Class 1A
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
4. Exceeding any one or combination of these limits may cause
permanent damage to this device.
5. MACOM does not recommend sustained operation near these
survivability limits.
6. Operating at nominal conditions with TJ ≤ +135°C will ensure
MTBF > 2.5 x 106 hours.
7. Junction Temperature (TJ) = TC + Өjc * (V * I)
Typical thermal resistance (Өjc) = 35° C/W.
a) For TC = 25°C, TJ = 57°C @ 5 V, 185 mA
b) For TC = 85°C, TJ = 118°C @ 5 V, 190 mA