LM3478/LM3478Q
May 25, 2011
High Efficiency Low-Side N-Channel Controller for
Switching Regulator
General Description
The LM3478 is a versatile Low-Side N-Channel MOSFET
controller for switching regulators. It is suitable for use in
topologies requiring a low side MOSFET, such as boost, fly-
back, SEPIC, etc. Moreover, the LM3478 can be operated at
extremely high switching frequency in order to reduce the
overall solution size. The switching frequency of the LM3478
can be adjusted to any value between 100kHz and 1MHz by
using a single external resistor. Current mode control pro-
vides superior bandwidth and transient response, besides
cycle-by-cycle current limiting. Output current can be pro-
grammed with a single external resistor.
The LM3478 has built in features such as thermal shutdown,
short-circuit protection, over voltage protection, etc. Power
saving shutdown mode reduces the total supply current to
5µA and allows power supply sequencing. Internal soft-start
limits the inrush current at start-up.
Key Specifications
Wide supply voltage range of 2.97V to 40V
100kHz to 1MHz Adjustable clock frequency
±2.5% (over temperature) internal reference
10µA shutdown current (over temperature)
Features
LM3478Q in MSOP-8 package is AEC-Q100 qualified and
manufactured on an Automotive Grade Flow
8-lead Mini-SO8 (MSOP-8) and SO-8 packages
Internal push-pull driver with 1A peak current capability
Current limit and thermal shutdown
Frequency compensation optimized with a capacitor and
a resistor
Internal softstart
Current Mode Operation
Undervoltage Lockout with hysteresis
Applications
Distributed Power Systems
Battery Chargers
Offline Power Supplies
Telecom Power Supplies
Automotive Power Systems
Typical Application Circuit
10135501
Typical High Efficiency Step-Up (Boost) Converter
© 2011 National Semiconductor Corporation 101355 www.national.com
LM3478/LM3478Q High Efficiency Low-Side N-Channel Controller for Switching Regulator
Connection Diagram
10135502
8 Lead Mini SO8 Package (MSOP-8 Package)
10135590
8 Lead SO-8 Package (SO-8 Package)
Package Marking and Ordering Information
Order Number Package Type Package Marking Supplied As Feature
LM3478MM MSOP-8 S14B 1000 units on Tape and Reel
LM3478MMX 3500 units on Tape and Reel
LM3478QMM MSOP-8 SSUB 1000 units on Tape and Reel AEC-Q100 (Grade 1) qualified.
Automotive Grade Production Flow*
LM3478QMMX 3500 units on Tape and Reel
LM3478MA SO-8 LM3478MA 1000 units on Tape and Reel
LM3478MAX 2500 units on Tape and Reel
* Automotive Grade (Q) product incorporates enhanced manufacturing and support processes for the automotive market, including defect detection methodologies.
Reliability qualification is compliant with the requirements and temperature grades defined in the AEC-Q100 standard. Automotive grade products are identified
with the letter Q. For more information go to http://www.national.com/automotive.
Pin Descriptions
Pin Name Pin Number Description
ISEN 1Current sense input pin. Voltage generated across an external sense
resistor is fed into this pin.
COMP 2 Compensation pin. A resistor, capacitor combination connected to this
pin provides compensation for the control loop.
FB 3 Feedback pin. The output voltage should be adjusted using a resistor
divider to provide 1.26V at this pin.
AGND 4 Analog ground pin.
PGND 5 Power ground pin.
DR 6 Drive pin. The gate of the external MOSFET should be connected to
this pin.
FA/SD 7 Frequency adjust and Shutdown pin. A resistor connected to this pin
sets the oscillator frequency. A high level on this pin for longer than
30 µs will turn the device off. The device will then draw less than 10µA
from the supply.
VIN 8 Power Supply Input pin.
www.national.com 2
LM3478/LM3478Q
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Input Voltage 45V
FB Pin Voltage -0.4V < VFB < 7V
FA/SD Pin Voltage -0.4V < VFA/SD < 7V
Peak Driver Output Current (<10µs) 1.0A
Power Dissipation Internally Limited
Storage Temperature Range −65°C to +150°C
Junction Temperature +150°C
ESD Susceptibilty
Human Body Model (Note 2) 2kV
Lead Temperature
MM Package
Vapor Phase (60 sec.)
Infared (15 sec.)
215°C
260°C
DR Pin Voltage −0.4V VDR 8V
ISEN Pin Voltage 500mV
Operating Ratings (Note 1)
Supply Voltage 2.97V VIN 40V
Junction Temperature
Range −40°C TJ +125°C
Switching Frequency 100kHz FSW 1MHz
Electrical Characteristics
Specifications in Standard type face are for TJ = 25°C, and in bold type face apply over the full Operating Temperature
Range. Unless otherwise specified, VIN = 12V, RFA = 40k
Symbol Parameter Conditions Typical Limit Units
VFB Feedback Voltage VCOMP = 1.4V,
2.97 VIN 40V
1.26
1.2416/1.228
1.2843/1.292
V
V(min)
V(max)
ΔVLINE Feedback Voltage Line
Regulation
2.97 VIN 40V 0.001
%/V
ΔVLOAD Output Voltage Load
Regulation
IEAO Source/Sink ±0.5
%/A (max)
VUVLO Input Undervoltage Lock-out 2.85
2.97
V
V(max)
VUV(HYS) Input Undervoltage Lock-out
Hysteresis
170
130
210
mV
mV (min)
mV (max)
Fnom Nominal Switching Frequency RFA = 40K400
350
440
kHz
kHz(min)
kHz(max)
RDS1 (ON) Driver Switch On Resistance
(top)
IDR = 0.2A, VIN= 5V 16 Ω
RDS2 (ON) Driver Switch On Resistance
(bottom)
IDR = 0.2A 4.5 Ω
VDR (max) Maximum Drive Voltage
Swing(Note 6)
VIN < 7.2V VIN V
VIN 7.2V 7.2
Dmax Maximum Duty Cycle(Note 7) 100 %
Tmin (on) Minimum On Time 325
210
600
nsec
nsec(min)
nsec(max)
ISUPPLY Supply Current (non-
switching)
(Note 9)2.7 3.3
mA
mA (max)
IQQuiescent Current in
Shutdown Mode
VFA/SD = 5V (Note 10),
VIN = 5V
5
10
µA
µA (max)
VSENSE Current Sense Threshold
Voltage
VIN = 5V 156
135/ 125
180/ 190
mV
mV (min)
mV (max)
VSC Short-Circuit Current Limit
Sense Voltage
VIN = 5V 343
250
415
mV
mV (min)
mV (max)
3 www.national.com
LM3478/LM3478Q
Symbol Parameter Conditions Typical Limit Units
VSL Internal Compensation Ramp
Voltage
VIN = 5V 92
52
132
mV
mV(min)
mV(max)
VSL ratio VSL/VSENSE 0.49 0.30
0.70
(min)
(max)
VOVP Output Over-voltage
Protection (with respect to
feedback voltage) (Note 8)
VCOMP = 1.4V 50
32/ 25
mV
mV(min)
MM package 78/ 85 mV(max)
MA package 78/100 mV(max)
VOVP(HYS) Output Over-Voltage
Protection Hysteresis(Note 8)
VCOMP = 1.4V 60
20
110
mV
mV(min)
mV(max)
Gm Error Ampifier
Transconductance
VCOMP = 1.4V
IEAO = 100µA (Source/Sink)
800 600/ 365
1000/ 1265
µmho
µmho (min)
µmho (max)
AVOL Error Amplifier Voltage Gain VCOMP = 1.4V
IEAO = 100µA (Source/Sink)
38
26
44
V/V
V/V (min)
V/V (max)
IEAO Error Amplifier Output Current
(Source/ Sink)
Source, VCOMP = 1.4V, VFB = 0V 110
80/ 50
140/ 180
µA
µA (min)
µA (max)
Sink, VCOMP = 1.4V, VFB = 1.4V −140
−100/ −85
−180/ −185
µA
µA (min)
µA (max)
VEAO Error Amplifier Output Voltage
Swing
Upper Limit
VFB = 0V
COMP Pin = Floating
2.2
1.8
2.4
V
V(min)
V(max)
Lower Limit
VFB = 1.4V
0.56
0.2
1.0
V
V(min)
V(max)
TSS Internal Soft-Start Delay VFB = 1.2V, VCOMP = Floating 4 msec
TrDrive Pin Rise Time Cgs = 3000pf, VDR = 0 to 3V 25 ns
TfDrive Pin Fall Time Cgs = 3000pf, VDR = 0 to 3V 25 ns
VSD Shutdown threshold (Note 5) Output = High 1.27
1.4
V
V (max)
Output = Low 0.65
0.3
V
V (min)
ISD Shutdown Pin Current VSD = 5V −1 µA
VSD = 0V +1
IFB Feedback Pin Current 15 nA
TSD Thermal Shutdown 165 °C
Tsh Thermal Shutdown Hysteresis 10 °C
θJA Thermal Resistance MM Package 200 °C/W
MA Package 151
www.national.com 4
LM3478/LM3478Q
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the
device is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: The human body model is a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin.
Note 3: All limits are guaranteed at room temperature (standard type face) and at temperature extremes (bold type face). All room temperature limits are 100%
tested. All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods. All limits are used to calculate
Average Outgoing Quality Level (AOQL).
Note 4: Typical numbers are at 25°C and represent the most likely norm.
Note 5: The FA/SD pin should be pulled to VIN through a resistor to turn the regulator off. The voltage on the FA/SD pin must be above the maximum limit for
Output = High to keep the regulator off and must be below the limit for Output = Low to keep the regulator on.
Note 6: The voltage on the drive pin, VDR is equal to the input voltage when input voltage is less than 7.2V. VDR is equal to 7.2V when the input voltage is greater
than or equal to 7.2V.
Note 7: The limits for the maximum duty cycle can not be specified since the part does not permit less than 100% maximum duty cycle operation.
Note 8: The over-voltage protection is specified with respect to the feedback voltage. This is because the over-voltage protection tracks the feedback voltage.
The overvoltage protection threshold is given by adding the feedback voltage, VFB to the over-voltage protection specification.
Note 9: For this test, the FA/SD pin is pulled to ground using a 40K resistor.
Note 10: For this test, the FA/SD pin is pulled to 5V using a 40K resistor.
5 www.national.com
LM3478/LM3478Q
Typical Performance Characteristics Unless otherwise specified, VIN = 12V, TJ = 25°C.
IQ vs Input Voltage (Shutdown)
10135503
ISupply vs Input Voltage (Non-Switching)
10135534
ISupply vs VIN (Switching)
10135535
Switching Frequency vs RFA
10135504
Frequency vs Temperature
10135554
Drive Voltage vs Input Voltage
10135505
www.national.com 6
LM3478/LM3478Q
Current Sense Threshold vs Input Voltage
10135545
COMP Pin Voltage vs Load Current
10135562
Efficiency vs Load Current (3.3V In and 12V Out)
10135559
Efficiency vs Load Current (5V In and 12V Out)
10135558
Efficiency vs Load Current (9V In and 12V Out)
10135560
Efficiency vs Load Current (3.3V In and 5V Out)
10135553
7 www.national.com
LM3478/LM3478Q
Error Amplifier Gain
10135555
Error Amplifier Phase
10135556
COMP Pin Source Current vs Temperature
10135536
Short Circuit Sense Voltage vs Input Voltage
10135557
Compensation Ramp vs Compensation Resistor
10135551
Shutdown Threshold Hysteresis vs Temperature
10135546
www.national.com 8
LM3478/LM3478Q
Duty Cycle vs Current Sense Voltage
10135594
9 www.national.com
LM3478/LM3478Q
Functional Block Diagram
10135506
Functional Description
The LM3478 uses a fixed frequency, Pulse Width Modulated
(PWM) current mode control architecture. The block diagram
above shows the basic functionality. In a typical application
circuit, the peak current through the external MOSFET is
sensed through an external sense resistor. The voltage
across this resistor is fed into the Isen pin. This voltage is fed
into the positive input of the PWM comparator. The output
voltage is also sensed through an external feedback resistor
divider network and fed into the error amplifier negative input
(feedback pin, FB). The output of the error amplifier (COMP
pin) is added to the slope compensation ramp and fed into the
negative input of the PWM comparator. At the start of any
switching cycle, the oscillator sets the RS latch using the
switch logic block. This forces a high signal on the DR pin
(gate of the external MOSFET) and the external MOSFET
turns on. When the voltage on the positive input of the PWM
comparator exceeds the negative input, the RS latch is reset
and the external MOSFET turns off.
The voltage sensed across the sense resistor generally con-
tains spurious noise spikes, as shown in Figure 2. These
spikes can force the PWM comparator to reset the RS latch
prematurely. To prevent these spikes from resetting the latch,
a blank-out circuit inside the IC prevents the PWM comparator
from resetting the latch for a short duration after the latch is
set. This duration is about 325ns and is called the blanking
interval and is specified as minimum on-time in the Electrical
Characteristics section. Under extremely light-load or no-load
conditions, the energy delivered to the output capacitor when
the external MOSFET in on during the blanking interval is
more than what is delivered to the load. An over-voltage com-
parator inside the LM3478 prevents the output voltage from
rising under these conditions. The over-voltage comparator
senses the feedback (FB pin) voltage and resets the RS latch.
The latch remains in reset state until the output decays to the
nominal value.
OVER VOLTAGE PROTECTION
The LM3478 has over voltage protection (OVP) for the output
voltage. OVP is sensed at the feedback pin (pin 3). If at any-
time the voltage at the feedback pin rises to VFB+ VOVP, OVP
is triggered. See ELECTRICAL CHARACTERISTICS section
for limits on VFB and VOVP.
OVP will cause the drive pin to go low, forcing the power
MOSFET off. With the MOSFET off, the output voltage will
drop. The LM3478 will begin switching again when the feed-
back voltage reaches VFB + (VOVP - VOVP(HYS)). See
ELECTRICAL CHARACTERISTICS for limits on VOVP(HYS).
OVP can be triggered if the unregulated input voltage crosses
7.2V, the output voltage will react as shown in Figure 1. The
internal bias of the LM3478 comes from either the internal
LDO as shown in the block diagram or the voltage at the Vin
pin is used directly. At Vin voltages lower than 7.2V the inter-
nal IC bias is the Vin voltage and at voltages above 7.2V the
internal LDO of the LM3478 provides the bias. At the
switchover threshold at 7.2V a sudden small change in bias
voltage is seen by all the internal blocks of the LM3478. The
control voltage shifts because of the bias change, the PWM
comparator tries to keep regulation. To the PWM comparator,
www.national.com 10
LM3478/LM3478Q
the scenario is identical to a step change in the load current,
so the response at the output voltage is the same as would
be observed in a step load change. Hence, the output voltage
overshoot here can also trigger OVP. The LM3478 will regu-
late in hysteretic mode for several cycles, or may not recover
and simply stay in hysteretic mode until the load current drops
or Vin is not crossing the 7.2V threshold anymore. Note that
the output is still regulated in hysteretic mode.
Depending on the requirements of the application there is
some influence one has over this effect. The threshold of 7.2V
can be shifted to higher voltages by adding a resistor in series
with Vin. In case Vin is right at the threshold of 7.2V it can
happen that the threshold is crossed over and over due to
some slight ripple on Vin. To minimize the effect on the output
voltage one can filter the Vin pin with an RC filter.
10135511
FIGURE 1. The Feedback Voltage Experiences an
Oscillation if the Input Voltage crosses the 7.2V Internal
Bias Threshold
10135507
FIGURE 2. Basic Operation of the PWM Comparator
SLOPE COMPENSATION RAMP
The LM3478 uses a current mode control scheme. The main
advantages of current mode control are inherent cycle-by-cy-
cle current limit for the switch and simpler control loop char-
acteristics. It is also easy to parallel power stages using
current mode control since current sharing is automatic. How-
ever, current mode control has an inherent instability for duty
cycles greater than 50%, as shown in Figure 3.
A small increase in the load current causes the switch current
to increase by ΔI0. The effect of this load change is ΔI1.
The two solid waveforms shown are the waveforms compared
at the internal pulse width modulator, used to generate the
MOSFET drive signal. The top waveform with the slope Se is
the internally generated control waveform VC. The bottom
waveform with slopes Sn and Sf is the sensed inductor current
waveform VSEN.
10135512
FIGURE 3. Sub-Harmonic Oscillation for D>0.5 and
Compensation Ramp to Avoid Sub-Harmonic Oscillation
11 www.national.com
LM3478/LM3478Q
Sub-harmonic Oscillation can be easily understood as a ge-
ometric problem. If the control signal does not have slope, the
slope representing the inductor current ramps up until the
control signal is reached and then slopes down again. If the
duty cycle is above 50%, any perturbation will not converge
but diverge from cycle to cycle and causes sub-harmonic os-
cillation.
It is apparent that the difference in the inductor current from
one cycle to the next is a function of Sn, Sf and Se as follows:
Hence, if the quantity (Sf - Se)/(Sn + Se) is greater than 1, the
inductor current diverges and subharmonic oscillation results.
This counts for all current mode topologies. The LM3478 has
some internal slope compensation VSL which is enough for
many applications above 50% duty cycle to avoid subhar-
monic oscillation .
For boost applications, the slopes Se, Sf and Sn can be cal-
culated with the formulas below:
Se = VSL x fs
Sf = Rsen x (VOUT - VIN)/L
Sn = VIN x Rsen/L
When Se increases then the factor which determines if sub-
harmonic oscillation will occur decreases. When the duty
cycle is greater than 50%, and the inductance becomes less,
the factor increases.
For more flexibility slope compensation can be increased by
adding one external resistor, RSL, in the Isens path. Figure 4
shows the setup. The externally generated slope compensa-
tion is then added to the internal slope compensation of the
LM3478. When using external slope compensation, the for-
mula for Se becomes:
Se = (VSL + (K x RSL)) x fs
A typical value for factor K is 40 µA.
The factor changes with switching frequency. Figure 5 is used
to determine the factor K for individual applications and the
formula below gives the factor K.
K = ΔVSL / RSL
It is a good design practice to only add as much slope com-
pensation as needed to avoid subharmonic oscillation. Addi-
tional slope compensation minimizes the influence of the
sensed current in the control loop. With very large slope com-
pensation the control loop characteristics are similar to a
voltage mode regulator which compares the error voltage to
a saw tooth waveform rather than the inductor current.
10135513
FIGURE 4. Adding External Slope Compensation
10135595
FIGURE 5. External Slope Compensation
ΔVSL vs RSL
FREQUENCY ADJUST/SHUTDOWN
The switching frequency of the LM3478 can be adjusted be-
tween 100kHz and 1MHz using a single external resistor. This
resistor must be connected between FA/SD pin and ground,
as shown in Figure 6. To determine the value of the resistor
required for a desired switching frequency refer to the typical
performance characteristics or use the following equation:
RFA = 4.503 x 1011 x fS- 1.26
www.national.com 12
LM3478/LM3478Q
10135514
FIGURE 6. Frequency Adjust
The FA/SD pin also functions as a shutdown pin. If a high
signal (>1.35V) appears on the FA/SD pin, the LM3478 stops
switching and goes into a low current mode. The total supply
current of the IC reduces to less than 10 uA under these con-
ditions. Figure 7 shows implementation of the shutdown func-
tion when operating in frequency adjust mode. In this mode a
high signal for more than 30us shuts down the IC. However,
the voltage on the FA/SD pin should be always less than the
absolute maximum of 7V to avoid any damage to the device.
10135516
FIGURE 7. Shutdown Operation in Frequency Adjust Mode
SHORT-CIRCUIT PROTECTION
When the voltage across the sense resistor measured on the
Isen pin exceeds 343 mV, short circuit current limit protection
gets activated. A comparator inside the LM3478 reduces the
switching frequency by a factor of 5 and maintains this con-
dition until the short is removed. In normal operation the
sensed current will trigger the power MOSFET to turn off.
During the blanking interval the PWM comparator will not re-
act to an over current so that this additional 343 mV current
limit threshold is implemented to protect the device in a short
circuit or severe overload condition.
Typical Applications
The LM3478 may be operated in either the continuous (CCM)
or the discontinuous current conduction mode (DCM). The
following applications are designed for the CCM operation.
This mode of operation has higher efficiency and usually low-
er EMI characteristics than the DCM.
BOOST CONVERTER
The boost converter converts a low input voltage into a higher
output voltage. The basic configuration for a boost converter
is shown in Figure 8. In the CCM (when the inductor current
never reaches zero at steady state), the boost regulator op-
erates in two states. In the first state of operation, MOSFET
Q is turned on and energy is stored in the inductor. During this
state, diode D is reverse biased and load current is supplied
by the output capacitor, Cout.
In the second state, MOSFET Q is off and the diode is forward
biased. The energy stored in the inductor is transferred to the
load and the output capacitor. The ratio of the switch on time
to the total period is the duty cycle D:
D = 1 - (Vin / Vout)
Including the voltage drop across the MOSFET and the diode
the definition for the duty cycle is:
D = 1 - ((Vin - Vq)/(Vout + Vd))
Vd is the forward voltage drop of the diode and Vq is the volt-
age drop across the MOSFET when it is on.
13 www.national.com
LM3478/LM3478Q
10135522
FIGURE 8. Simplified Boost Convertert
A. First Cycle Operation B. Second Cycle of Operation
POWER INDUCTOR SELECTION
The inductor is one of the two energy storage elements in a
boost converter. Figure 9 shows how the inductor current
varies during a switching cycle. The current through an in-
ductor is quantified by the following relationship of L, IL and
VL:
The important quantities in determining a proper inductance
value are IL (the average inductor current) and ΔIL (the in-
ductor current ripple). If ΔIL is larger than IL, the inductor
current will drop to zero for a portion of the cycle and the con-
verter will operate in the DCM. All the analysis in this
datasheet assumes operation in the CCM. To operate in the
CCM, the following condition must be met:
Choose the minimum Iout to determine the minimum induc-
tance value. A common choice is to set ΔIL to 30% of IL.
Choosing an appropriate core size for the inductor involves
calculating the average and peak currents expected through
the inductor. In a boost converter the peak inductor current is:
ILPEAK = Average IL(max) + ΔIL(max)
Average IL(max) = Iout / (1-D)
ΔIL(max) = D x Vin / (2 x fs x L)
An inductor size with ratings higher than these values has to
be selected. If the inductor is not properly rated, saturation will
occur and may cause the circuit to malfunction.
The LM3478 can be set to switch at very high frequencies.
When the switching frequency is high, the converter can be
operated with very small inductor values. The LM3478 senses
the peak current through the switch which is the same as the
peak inductor current as calculated above.
www.national.com 14
LM3478/LM3478Q
10135524
FIGURE 9. Inductor Current and Diode Current
15 www.national.com
LM3478/LM3478Q
PROGRAMMING THE OUTPUT VOLTAGE
The output voltage can be programmed using a resistor di-
vider between the output and the FB pin. The resistors are
selected such that the voltage at the FB pin is 1.26V. Pick
RF1 (the resistor between the output voltage and the feedback
pin) and RF2 (the resistor between the feedback pin and
ground) can be selected using the following equation,
RF2 = (1.26V x RF1) / (Vout - 1.26V)
A 100pF capacitor may be connected between the feedback
and ground pins to reduce noise.
SETTING THE CURRENT LIMIT
The maximum amount of current that can be delivered to the
load is set by the sense resistor, RSEN. Current limit occurs
when the voltage that is generated across the sense resistor
equals the current sense threshold voltage, VSENSE. When
this threshold is reached, the switch will be turned off until the
next cycle. Limits for VSENSE are specified in the electrical
characteristics section. VSENSE represents the maximum val-
ue of the internal control signal VCS as shown in Figure 10.
This control signal, however, is not a constant value and
changes over the course of a period as a result of the internal
compensation ramp (VSL). Therefore the current limit thresh-
old will also change. The actual current limit threshold is a
function of the sense voltage (VSENSE) and the internal com-
pensation ramp:
RSEN x ISWLIMIT = VCSMAX = VSENSE - (D x VSL)
Where ISWLIMIT is the peak switch current limit, defined by the
equation below.
10135552
FIGURE 10. Current Sense Voltage vs Duty Cycle
Figure 10 shows how VCS (and current limit threshold voltage)
change with duty cycle. The curve is equivalent to the internal
compensation ramp slope (Se) and is bounded at low duty
cycle by VSENSE, shown as a dotted line. As duty cycle in-
creases, the control voltage is reduced as VSL ramps up. The
graph also shows the short circuit current limit threshold of
343 mV (typical) during the 325 ns (typical) blanking time. For
higher frequencies this fixed blanking time obviously occupies
more duty cycle, percentage wise. Since current limit thresh-
old varies with duty cycle, the following equation should be
used to select RSEN and set the desired current limit threshold:
The numerator of the above equation is VCS, and ISWLIMIT is
calculated as:
To avoid false triggering, the current limit value should have
some margin above the maximum operating value, typically
120%. Values for both VSENSE and VSL are specified in the
characteristic table. However, calculating with the limits of
these two specs could result in an unrealistically wide current
limit or RSEN range. Therefore, the following equation is rec-
ommended, using the VSL ratio value given in the EC table:
RSEN is part of the current mode control loop and has some
influence on control loop stability. Therefore, once the current
limit threshold is set, loop stability must be verified. As de-
scribed in the slope compensation section, the following must
hold true for a current mode converter to be stable:
Sf - Se < Sn + Se
To verify that this equation holds true, use the following equa-
tion:
If the selected RSEN is greater than this value, additional
slope compensation must be added to ensure stability, as
described in the section below.
CURRENT LIMIT WITH EXTERNAL SLOPE
COMPENSATION
RSL is used to add additional slope compensation when re-
quired. It is not necessary in most designs and RSL should be
no larger than necessary. Select RSL according to the fol-
lowing equation:
Where RSEN is the selected value based on current limit. With
RSL installed, the control signal includes additional external
slope to stabilize the loop, which will also have an effect on
the current limit threshold. Therefore, the current limit thresh-
old must be re-verified, as illustrated in the equations below :
VCS = VSENSE – (D x (VSL + ΔVSL))
Where ΔVSL is the additional slope compensation generated
as discussed in the slope compensation ramp section and
calculated as:
ΔVSL = 40 µA x RSL
www.national.com 16
LM3478/LM3478Q
This changes the equation for current limit (or RSEN) to:
The RSEN and RSL values may have to be calculated iteratively
in order to achieve both the desired current limit and stable
operation. In some designs RSL can also help to filter noise
on the ISEN pin.
If the inductor is selected such that ripple current is the rec-
ommended 30% value, and the current limit threshold is 120%
of the maximum peak, a simpler method can be used to de-
termine RSEN. The equation below will provide optimum sta-
bility without RSL, provided that the above 2 conditions are
met:
POWER DIODE SELECTION
Observation of the boost converter circuit shows that the av-
erage current through the diode is the average load current,
and the peak current through the diode is the peak current
through the inductor. The diode should be rated to handle
more than its peak current. The peak diode current can be
calculated using the formula:
ID(Peak) = IOUT/ (1−D) + ΔIL
Thermally the diode must be able to handle the maximum av-
erage current delivered to the output. The peak reverse volt-
age for boost converters is equal to the regulated output
voltage. The diode must be capable of handling this voltage.
To improve efficiency, a low forward drop schottky diode is
recommended.
POWER MOSFET SELECTION
The drive pin of the LM3478 must be connected to the gate
of an external MOSFET. The drive pin (DR) voltage depends
on the input voltage (see typical performance characteristics).
In most applications, a logic level MOSFET can be used. For
very low input voltages, a sub logic level MOSFET should be
used. The selected MOSFET has a great influence on the
system efficiency. The critical parameters for selecting a
MOSFET are:
1. Minimum threshold voltage, VTH(MIN)
2. On-resistance, RDS(ON)
3. Total gate charge, Qg
4. Reverse transfer capacitance, CRSS
5. Maximum drain to source voltage, VDS(MAX)
The off-state voltage of the MOSFET is approximately equal
to the output voltage. Vds(max) must be greater than the out-
put voltage. The power losses in the MOSFET can be cate-
gorized into conduction losses and switching losses. Rds(on)
is needed to estimate the conduction losses, Pcond:
Pcond = I2 x RDS(ON) x D
The temperature effect on the RDS(ON) usually is quite signif-
icant. Assume 30% increase at hot.
For the current I in the formula above the average inductor
current may be used.
Especially at high switching frequencies the switching losses
may be the largest portion of the total losses.
The switching losses are very difficult to calculate due to
changing parasitics of a given MOSFET in operation. Often
the individual MOSFETS datasheet does not give enough in-
formation to yield a useful result. The following formulas give
a rough idea how the switching losses are calculated:
INPUT CAPACITOR SELECTION
Due to the presence of an inductor at the input of a boost
converter, the input current waveform is continuous and tri-
angular as shown in figure 9. The inductor ensures that the
input capacitor sees fairly low ripple currents. However, as the
input capacitor gets smaller, the input ripple goes up. The rms
current in the input capacitor is given by:
The input capacitor should be capable of handling the rms
current. Although the input capacitor is not as critical in a
boost application, low values can cause impedance interac-
tions. Therefore a good quality capacitor should be chosen in
the range of 100µF to 200µF. If a value lower than 100µF is
used, then problems with impedance interactions or switching
noise can affect the LM3478. To improve performance, es-
pecially with Vin below 8 volts, it is recommended to use a 20
Ohm resistor at the input to provide an RC filter. The resistor
is placed in series with the VIN pin with only a bypass capac-
itor attached to the VIN pin directly (see figure 11). A 0.1µF
or 1µF ceramic capacitor is necessary in this configuration.
The bulk input capacitor and inductor will connect on the other
side of the resistor at the input power supply.
10135593
FIGURE 11. Reducing IC Input Noise
17 www.national.com
LM3478/LM3478Q
OUTPUT CAPACITOR SELECTION
The output capacitor in a boost converter provides all the out-
put current when the inductor is charging. As a result it sees
very large ripple currents. The output capacitor should be ca-
pable of handling the maximum rms current. The rms current
in the output capacitor is:
Where
The ESR and ESL of the capacitor directly control the output
ripple. Use capacitors with low ESR and ESL at the output for
high efficiency and low ripple voltage. Surface mount tanta-
lums, surface mount polymer electrolytic, polymer tantalum,
or multi-layer ceramic capacitors are recommended at the
output.
For applications that require very low output voltage ripple, a
second stage LC filter often is a good solution. Most of the
time it is lower cost to use a small second Inductor in the
power path and an additional final output capacitor than to
reduce the output voltage ripple by purely increasing the out-
put capacitor without an additional LC filter.
LAYOUT GUIDELINES
Good board layout is critical for switching controllers. First the
ground plane area must be sufficient for thermal dissipation
purposes and second, appropriate guidelines must be fol-
lowed to reduce the effects of switching noise. Switching
converters are very fast switching devices. In such devices,
the rapid increase of input current combined with the parasitic
trace inductance generates unwanted Ldi/dt noise spikes.
The magnitude of this noise tends to increase as the output
current increases. This parasitic spike noise may turn into
electromagnetic interference (EMI), and can also cause prob-
lems in device performance. Therefore, care must be taken
in layout to minimize the effect of this switching noise. The
current sensing circuit in current mode devices can be easily
affected by switching noise. This noise can cause duty cycle
jittering which leads to increased spectral noise. Although the
LM3478 has 325ns blanking time at the beginning of every
cycle to ignore this noise, some noise may remain after the
blanking time.
The most important layout rule is to keep the AC current loops
as small as possible. Figure 12 shows the current flow of a
boost converter. The top schematic shows a dotted line which
represents the current flow during on-state and the middle
schematic shows the current flow during off-state. The bottom
schematic shows the currents we refer to as AC currents.
They are the most critical ones since current is changing in
very short time periods. The dotted lined traces of the bottom
schematic are the once to make as short as possible.
10135520
FIGURE 12. Current Flow In A Boost Application
The PGND and AGND pins have to be connected to the same
ground very close to the IC. To avoid ground loop currents,
attach all the grounds of the system only at one point.
A ceramic input capacitor should be connected as close as
possible to the Vin pin and grounded close to the GND pin.
For a layout example please see Application Note1204. For
more information about layout in switch mode power supplies
please refer to Application Note 1229.
COMPENSATION
For detailed explanation on how to select the right compen-
sation components to attach to the compensation pin for a
boost topology please see Application Note 1286.
Designing SEPIC Using the LM3478
Since the LM3478 controls a low-side N-Channel MOSFET,
it can also be used in SEPIC (Single Ended Primary Induc-
tance Converter) applications. An example of a SEPIC using
the LM3478 is shown in Figure 13. Note that the output volt-
age can be higher or lower than the input voltage. The SEPIC
uses two inductors to step-up or step-down the input voltage.
The inductors L1 and L2 can be two discrete inductors or two
windings of a coupled inductor since equal voltages are ap-
plied across the inductor throughout the switching cycle. Us-
ing two discrete inductors allows use of catalog magnetics, as
opposed to a custom inductor. The input ripple can be re-
duced along with size by using the coupled windings for L1
and L2.
Due to the presence of the inductor L1 at the input, the SEPIC
inherits all the benefits of a boost converter. One main ad-
vantage of a SEPIC over a boost converter is the inherent
input to output isolation. The capacitor CS isolates the input
from the output and provides protection against a shorted or
malfunctioning load. Hence, the SEPIC is useful for replacing
boost circuits when true shutdown is required. This means
that the output voltage falls to 0V when the switch is turned
off. In a boost converter, the output can only fall to the input
voltage minus a diode drop.
The duty cycle of a SEPIC is given by:
www.national.com 18
LM3478/LM3478Q
In the above equation, VQ is the on-state voltage of the MOS-
FET, Q, and VDIODE is the forward voltage drop of the diode.
10135544
FIGURE 13. Typical SEPIC Converter
POWER MOSFET SELECTION
As in a boost converter, parameters governing the selection
of the MOSFET are the minimum threshold voltage, VTH
(MIN), the on-resistance, RDS(ON), the total gate charge, Qg, the
reverse transfer capacitance, CRSS, and the maximum drain
to source voltage, VDS(MAX). The peak switch voltage in a
SEPIC is given by:
VSW(PEAK) = VIN + VOUT + VDIODE
The selected MOSFET should satisfy the condition:
VDS(MAX) > VSW(PEAK)
The peak switch current is given by:
The rms current through the switch is given by:
POWER DIODE SELECTION
The Power diode must be selected to handle the peak current
and the peak reverse voltage. In a SEPIC, the diode peak
current is the same as the switch peak current. The off-state
voltage or peak reverse voltage of the diode is VIN + VOUT.
Similar to the boost converter, the average diode current is
equal to the output current. Schottky diodes are recommend-
ed.
SELECTION OF INDUCTORS L1 AND L2
Proper selection of inductors L1 and L2 to maintain continu-
ous current conduction mode requires calculations of the
following parameters.
Average current in the inductors:
IL2AVE = IOUT
Peak to peak ripple current, to calculate core loss if neces-
sary:
Maintaining the condition IL > ΔiL/2 to ensure continuous cur-
rent conduction yields:
Peak current in the inductor, to ensure the inductor does not
saturate:
19 www.national.com
LM3478/LM3478Q
IL1PK must be lower than the maximum current rating set by
the current sense resistor.
The value of L1 can be increased above the minimum rec-
ommended to reduce input ripple and output ripple. However,
once DIL1 is less than 20% of IL1AVE, the benefit to output ripple
is minimal.
By increasing the value of L2 above the minimum recom-
mended, ΔIL2 can be reduced, which in turn will reduce the
output ripple voltage:
where ESR is the effective series resistance of the output ca-
pacitor.
If L1 and L2 are wound on the same core, then L1 = L2 = L.
All the equations above will hold true if the inductance is re-
placed by 2L.
SENSE RESISTOR SELECTION
The peak current through the switch, ISW(PEAK) can be adjust-
ed using the current sense resistor, RSEN, to provide a certain
output current. Resistor RSEN can be selected using the for-
mula:
Sepic Capacitor Selection
The selection of the SEPIC capacitor, CS, depends on the
rms current. The rms current of the SEPIC capacitor is given
by:
The SEPIC capacitor must be rated for a large ACrms current
relative to the output power. This property makes the SEPIC
much better suited to lower power applications where the rms
current through the capacitor is relatively small (relative to
capacitor technology). The voltage rating of the SEPIC ca-
pacitor must be greater than the maximum input voltage.
There is an energy balance between CS and L1, which can
be used to determine the value of the capacitor. The basic
energy balance equation is:
where
is the ripple voltage across the SEPIC capacitor, and
is the ripple current through the inductor L1. The energy bal-
ance equation can be solved to provide a minimum value for
CS:
Input Capacitor Selection
Similar to a boost converter, the SEPIC has an inductor at the
input. Hence, the input current waveform is continuous and
triangular. The inductor ensures that the input capacitor sees
fairly low ripple currents. However, as the input capacitor gets
smaller, the input ripple goes up. The rms current in the input
capacitor is given by:
The input capacitor should be capable of handling the rms
current. Although the input capacitor is not as critical in a
boost application, low values can cause impedance interac-
tions. Therefore a good quality capacitor should be chosen in
the range of 100µF to 200µF. If a value lower than 100µF is
used than problems with impedance interactions or switching
noise can affect the LM3478. To improve performance, es-
pecially with VIN below 8 volts, it is recommended to use a
20Ω resistor at the input to provide a RC filter. The resistor is
placed in series with the VIN pin with only a bypass capacitor
attached to the VIN pin directly (see Figure 11). A 0.1µF or 1µF
ceramic capacitor is necessary in this configuration. The bulk
input capacitor and inductor will connect on the other side of
the resistor with the input power supply.
Output Capacitor Selection
The output capacitor of the SEPIC sees very large ripple cur-
rents (similar to the output capacitor of a boost converter). The
rms current through the output capacitor is given by:
The ESR and ESL of the output capacitor directly control the
output ripple. Use low capacitors with low ESR and ESL at
the output for high efficiency and low ripple voltage. Surface
mount tantalums, surface mount polymer electrolytic and
polymer tantalum, Sanyo- OSCON, or multi-layer ceramic ca-
pacitors are recommended at the output for low ripple.
www.national.com 20
LM3478/LM3478Q
Other Application Circuit
10135543
FIGURE 14. Typical Flyback Circuit
21 www.national.com
LM3478/LM3478Q
Physical Dimensions inches (millimeters) unless otherwise noted
www.national.com 22
LM3478/LM3478Q
Notes
23 www.national.com
LM3478/LM3478Q
Notes
LM3478/LM3478Q High Efficiency Low-Side N-Channel Controller for Switching Regulator
For more National Semiconductor product information and proven design tools, visit the following Web sites at:
www.national.com
Products Design Support
Amplifiers www.national.com/amplifiers WEBENCH® Tools www.national.com/webench
Audio www.national.com/audio App Notes www.national.com/appnotes
Clock and Timing www.national.com/timing Reference Designs www.national.com/refdesigns
Data Converters www.national.com/adc Samples www.national.com/samples
Interface www.national.com/interface Eval Boards www.national.com/evalboards
LVDS www.national.com/lvds Packaging www.national.com/packaging
Power Management www.national.com/power Green Compliance www.national.com/quality/green
Switching Regulators www.national.com/switchers Distributors www.national.com/contacts
LDOs www.national.com/ldo Quality and Reliability www.national.com/quality
LED Lighting www.national.com/led Feedback/Support www.national.com/feedback
Voltage References www.national.com/vref Design Made Easy www.national.com/easy
PowerWise® Solutions www.national.com/powerwise Applications & Markets www.national.com/solutions
Serial Digital Interface (SDI) www.national.com/sdi Mil/Aero www.national.com/milaero
Temperature Sensors www.national.com/tempsensors SolarMagic™ www.national.com/solarmagic
PLL/VCO www.national.com/wireless PowerWise® Design
University
www.national.com/training
THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION
(“NATIONAL”) PRODUCTS. NATIONAL MAKES NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE ACCURACY
OR COMPLETENESS OF THE CONTENTS OF THIS PUBLICATION AND RESERVES THE RIGHT TO MAKE CHANGES TO
SPECIFICATIONS AND PRODUCT DESCRIPTIONS AT ANY TIME WITHOUT NOTICE. NO LICENSE, WHETHER EXPRESS,
IMPLIED, ARISING BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS
DOCUMENT.
TESTING AND OTHER QUALITY CONTROLS ARE USED TO THE EXTENT NATIONAL DEEMS NECESSARY TO SUPPORT
NATIONAL’S PRODUCT WARRANTY. EXCEPT WHERE MANDATED BY GOVERNMENT REQUIREMENTS, TESTING OF ALL
PARAMETERS OF EACH PRODUCT IS NOT NECESSARILY PERFORMED. NATIONAL ASSUMES NO LIABILITY FOR
APPLICATIONS ASSISTANCE OR BUYER PRODUCT DESIGN. BUYERS ARE RESPONSIBLE FOR THEIR PRODUCTS AND
APPLICATIONS USING NATIONAL COMPONENTS. PRIOR TO USING OR DISTRIBUTING ANY PRODUCTS THAT INCLUDE
NATIONAL COMPONENTS, BUYERS SHOULD PROVIDE ADEQUATE DESIGN, TESTING AND OPERATING SAFEGUARDS.
EXCEPT AS PROVIDED IN NATIONAL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NATIONAL ASSUMES NO
LIABILITY WHATSOEVER, AND NATIONAL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY RELATING TO THE SALE
AND/OR USE OF NATIONAL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR
PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY
RIGHT.
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS PRIOR WRITTEN APPROVAL OF THE CHIEF EXECUTIVE OFFICER AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
Life support devices or systems are devices which (a) are intended for surgical implant into the body, or (b) support or sustain life and
whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected
to result in a significant injury to the user. A critical component is any component in a life support device or system whose failure to perform
can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness.
National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other
brand or product names may be trademarks or registered trademarks of their respective holders.
Copyright© 2011 National Semiconductor Corporation
For the most current product information visit us at www.national.com
National Semiconductor
Americas Technical
Support Center
Email: support@nsc.com
Tel: 1-800-272-9959
National Semiconductor Europe
Technical Support Center
Email: europe.support@nsc.com
National Semiconductor Asia
Pacific Technical Support Center
Email: ap.support@nsc.com
National Semiconductor Japan
Technical Support Center
Email: jpn.feedback@nsc.com
www.national.com