Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 60V
▼ Lower Gate Charge RDS(ON) 2Ω
▼ Fast Switching Characteristic ID590mA
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃mA
ID@TA=70℃mA
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient390 ℃/W
Data and specifications subject to change without notice
Parameter
Operating Junction Temperature Range
Continuous Drain Current, VGS @ 10V3470
Pulsed Drain Current11.6
Total Power Dissipation
Storage Temperature Range -55 to 150
Thermal Data
Gate-Source Voltage +20
Continuous Drain Current, VGS @ 10V3590
Parameter Rating
Drain-Source Voltage 60
AP2342GK-HF
1.38
-55 to 150
201111251
Halogen-Free Product
1
D
DS
G
SOT-223
A
dvanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, ultra lo
w
on-resistance and cost-effectiveness.
The SOT-223 package is designed for suface mount application, large
r
heatsink than SO-8 and SOT package.
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=500mA - - 2 Ω
VGS=4.5V, ID=200mA - - 3 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance2VDS=10V, ID=500mA - 0.6 - S
IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA
QgTotal Gate Charge ID=500mA - 1 1.6 nC
Qgs Gate-Source Charge VDS=30V - 0.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 0.3 - nC
td(on) Turn-on Delay Time VDS=30V - 11 - ns
trRise Time ID=500mA - 8 - ns
td(off) Turn-off Delay Time RG=3.3Ω-55-ns
tfFall Time VGS=10V - 30 - ns
Ciss Input Capacitance VGS=0V - 33 53 pF
Coss Output Capacitance VDS=25V - 8 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=0.5A, VGS=0V - - 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP2342GK-HF
3.Surface mounted on 1 in2 copper pad of FR4 board ; 180℃/W when mounted on min. copper pad.
2
AP2342GK-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
20
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
0.4
0.8
1.2
1.6
0246810
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC 10V
7.0V
6.0V
5.0V
VG=4.0V
0
0.4
0.8
1.2
0246810
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC 10V
7.0V
60V
5.0V
VG=4.0V
0.4
0.8
1.2
1.6
2
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D=500mA
VG=10V
1.4
1.5
1.6
1.7
1.8
1.9
2
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (
Ω
)
I
D=200mA
TA=25oC
0
0.1
0.2
0.3
0.4
0.5
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj=25oCTj=150oC
0.0
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
ID=250uA
AP2342GK-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4
0
2
4
6
8
10
0 0.4 0.8 1.2 1.6 2 2.4
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=0.5A
V DS =30V
V DS =48V
0
10
20
30
40
50
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
10
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 180℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
0.2
0.4
0.6
0.8
25 50 75 100 125 150
TA , Ambient Temperature ( oC )
ID , Drain Current (A)
Operation in this area
limited by RDS(ON)
0
0.2
0.4
0.6
0.8
0123456
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
Tj=-40oC
