ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35V; ID=-1.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT23 package APPLICATIONS * DC - DC Converters * Power Management Functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL Top View ZXM61P03FTA 7 8mm embossed 3000 units ZXM61P03FTC 13 8mm embossed 10000 units DEVICE MARKING * P03 PROVISIONAL ISSUE A - JULY 1999 81 ZXM61P03F ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS -30 V Gate- Source Voltage V GS 20 V Continuous Drain Current (V GS=-10V; T A=25C)(b) (V GS=-10V; T A=70C)(b) ID -1.1 -0.9 A Pulsed Drain Current (c) I DM -4.3 A Continuous Source Current (Body Diode)(b) IS -0.88 A I SM -4.3 A Power Dissipation at T A=25C (a) Linear Derating Factor PD 625 5 mW mW/C Power Dissipation at T A=25C (b) Linear Derating Factor PD 806 6.4 mW mW/C Operating and Storage Temperature Range T j:T stg -55 to +150 C VALUE UNIT Pulsed Source Current (Body Diode)(c) LIMIT UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R JA 200 C/W Junction to Ambient (b) R JA 155 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. PROVISIONAL ISSUE A - JULY 1999 82 ZXM61P03F Max Power Dissipation (Watts) CHARACTERISTICS 10 -ID - Drain Current (A) Refer Note (a) 1 DC 1s 100ms 10ms 1ms 100m 100us 0.1 1 100 10 Refer Note (a) 0.4 0.2 0 0 20 40 80 60 100 120 Safe Operating Area Derating Curve 180 Refer Note (b) 140 120 100 D=0.5 60 40 D=0.2 20 D=0.1 Single Pulse D=0.05 0 0.0001 Refer Note (b) 0.6 T - Temperature (C) 160 80 0.8 -VDS - Drain-Source Voltage (V) Thermal Resistance (C/W) Thermal Resistance (C/W) 10m 1.0 0.001 0.01 0.1 1 240 Refer Note (a) 200 160 120 D=0.5 80 40 D=0.2 D=0.1 Single Pulse D=0.05 0 0.0001 0.001 10 160 140 0.01 0.1 1 10 100 1000 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance PROVISIONAL ISSUE A - JULY 1999 83 ZXM61P03F ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs -30 V I D=-250A, V GS=0V -1 A V DS=-30V, V GS=0V 100 nA V GS= 20V, V DS=0V V I D =-250A, V DS= V GS V GS=-10V, I D=-0.6A V GS=-4.5V, I D=-0.3A S V DS=-10V,I D=-0.3A -1.0 0.35 0.55 0.44 DYNAMIC (3) Input Capacitance C iss 140 pF Output Capacitance C oss 45 pF Reverse Transfer Capacitance C rss 20 pF Turn-On Delay Time t d(on) 1.9 ns Rise Time tr 2.9 ns Turn-Off Delay Time t d(off) 8.9 ns Fall Time tf 5.0 Total Gate Charge Qg 4.8 nC Gate-Source Charge Q gs 0.62 nC Gate Drain Charge Q gd 1.3 nC Diode Forward Voltage (1) V SD -0.95 V T j=25C, I S=-0.6A, V GS=0V Reverse Recovery Time (3) t rr 14.8 ns T j=25C, I F=-0.6A, di/dt= 100A/s Reverse Recovery Charge(3) Q rr 7.7 nC V DS=-25 V, V GS=0V, f=1MHz SWITCHING(2) (3) V DD =-15V, I D=-0.6A R G=6.2, R D=25 (Refer to test circuit) ns V DS=-24V,V GS=-10V, I D =-0.6A (Refer to test circuit) SOURCE-DRAIN DIODE (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JULY 1999 84 ZXM61P03F TYPICAL CHARACTERISTICS 10 10 +150C 10V -ID - Drain Current (A) -VGS 9V 8V 7V 6V 5V 4V 1 3V 100m 0.1 10 1 -ID - Drain Current (A) 4V 1 3V 0.1 10 100 -VDS - Drain-Source Voltage (V) Output Characteristics Output Characteristics T=+150C 1 T=+25C 100m VDS=-10V 1.5 5V -VDS - Drain-Source Voltage (V) 10 10m -VGS 9V 8V 7V 6V 10V 100m 100 Normalised RDS(on) and VGS(th) -ID - Drain Current (A) +25C 3.5 2.5 4.5 1.7 RDS(on) 1.5 VGS=-10V ID=-0.6A 1.3 1.1 VGS=VDS 0.9 ID=-250uA VGS(th) 0.7 0.5 -100 -VGS - Gate-Source Voltage (V) 0 +100 +200 Tj - Junction Temperature (C) Normalised RDS(on) and VGS(th) Typical Transfer Characteristics -ISD - Reverse Drain Current (A) RDS(on) - Drain-Source On-Resistance () v Temperature 10 Vg=-3V 1 Vg=-5V Vg=-10V 100m 0.1 1 10 10 1 100m T=+150C T=+25C 10m 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -ID - Drain Current (A) -VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - JULY 1999 85 ZXM61P03F C - Capacitance (pF) 300 -VGS - Gate-Source Voltage (V) TYPICAL CHARACTERISTICS Vgs=0V f=1MHz 250 Ciss Coss Crss 200 150 100 50 0 0.1 1 10 100 14 ID=-0.6A 12 10 VDS=-24V 8 VDS=-15V 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - JULY 1999 86 ZXM61P03F PAD LAYOUT DETAILS N PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C - 1.10 - 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 K 0.01 0.10 0.0004 0.004 L 2.10 2.50 0.0825 0.0985 N NOM 0.95 NOM 0.075 NOM 0.037 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - JULY 1999 88