ZXM61P03FTC - Zetex Semiconductors

30V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXM61P03F

SUMMARY

V(BR)DSS=-30V; RDS(ON)=0.35V; ID=-1.0A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique

structure that combines the benefits of low on-resistance with fast switching

speed. This makes them ideal for high efficiency, low voltage, power

management applications.

FEATURES

•Low on-resistance

•Fast switching speed

•Low threshold

•Low gate drive

•SOT23 package

APPLICATIONS

•DC - DC Converters

•Power Management Functions

•Disconnect switches

•Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

(inches) TAPE WIDTH (mm) QUANTITY

PER REEL

ZXM61P03FTA 7 8mm embossed 3000 units

ZXM61P03FTC 13 8mm embossed 10000 units

DEVICE MARKING

•P03

Top View

SOT23

PROVISIONAL ISSUE A - JULY 1999

ZXM61P03F

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) RθJA 200 °C/W

Junction to Ambient (b) RθJA 155 °C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t<5 secs.

Impedance graph.

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage VDSS -30 V

Gate- Source Voltage VGS ± 20 V

Continuous Drain Current (VGS=-10V; TA=25°C)(b)

GS=-10V; TA=70°C)(b) ID-1.1

-0.9 A

Pulsed Drain Current (c) IDM -4.3 A

Continuous Source Current (Body Diode)(b) IS-0.88 A

Pulsed Source Current (Body Diode)(c) ISM -4.3 A

Power Dissipation at TA=25°C (a)

Linear Derating Factor PD625

5mW

mW/°C

Power Dissipation at TA=25°C (b)

Linear Derating Factor PD806

6.4 mW

mW/°C

Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

PROVISIONAL ISSUE A - JULY 1999

ZXM61P03F

0.1 100

0.0001 0.1 10

080160

-VDS - Drain-Source Voltage (V)

Safe Operating Area

10m

100m

-I

- Drain Current (A)

D=0.2

D=0.1

Thermal Resistance (°C/W)

180

80 D=0.5

Pulse Width (s)

Transient Thermal Impedance

Max Power Dissipation (Watts)

1.0

0.6

T - Temperature (°C)

Derating Curve

Refer Note (a)

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Transient Thermal Impedance

0.0001

Pulse Width (s)10 1000

120

240

Single Pulse

D=0.5

D=0.05

D=0.2

D=0.1

101

0.8

0.4

0.2

20 40 60 100 120 140

Refer Note (b)

Refer Note (b) Refer Note (a)

100

120

140

160

0.001 0.01 1

200

160

0.001 0.01 0.1 1 100

CHARACTERISTICS

100ms

10ms

1ms

100us

Refer Note (a)

PROVISIONAL ISSUE A - JULY 1999

ZXM61P03F

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V

Zero Gate Voltage Drain Current IDSS -1 µAVDS

=-30V, VGS=0V

Gate-Body Leakage IGSS ±100 nA VGS=± 20V, VDS=0V

Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250µA, VDS

= VGS

Static Drain-Source On-State Resistance

(1) RDS(on) 0.35

0.55 Ω

ΩVGS=-10V, ID=-0.6A

VGS=-4.5V, ID=-0.3A

Forward Transconductance (3) gfs 0.44 S VDS

=-10V,ID=-0.3A

DYNAMIC (3)

Input Capacitance Ciss 140 pF VDS

=-25 V, VGS=0V,

f=1MHz

Output Capacitance Coss 45 pF

Reverse Transfer Capacitance Crss 20 pF

SWITCHING(2) (3)

Turn-On Delay Time td(on) 1.9 ns

VDD

=-15V, ID=-0.6A

RG=6.2Ω, RD=25Ω

(Refer to test circuit)

Rise Time tr2.9 ns

Turn-Off Delay Time td(off) 8.9 ns

Fall Time tf5.0 ns

Total Gate Charge Qg4.8 nC VDS

=-24V,VGS=-10V,

ID=-0.6A

(Refer to test circuit)

Gate-Source Charge Qgs 0.62 nC

Gate Drain Charge Qgd 1.3 nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) VSD -0.95 V Tj=25°C, IS=-0.6A,

VGS=0V

Reverse Recovery Time (3) trr 14.8 ns Tj=25°C, IF=-0.6A,

di/dt= 100A/µs

Reverse Recovery Charge(3) Qrr 7.7 nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - JULY 1999

ZXM61P03F

0.1 1 100

1.5 2.5

0.1 1 10 0.2 0.8 1.4

+200+100-100

0.1 10 100

-VDS - Drain-Source Voltage (V)

Output Characteristics

100m

-I

- Drain Current (A)

-VGS

VDS=-10V

-I

- Drain Current (A)

10m

-VGS - Gate-Source Voltage (V)

Typical Transfer Characteristics

DS(on)

- Drain-Source On-Resistance (Ω)

100m

-ID- Drain Current (A)

On-Resistance v Drain Current

-I

- Drain Current (A)

100m

-VDS - Drain-Source Voltage (V)

Output Characteristics

Normalised R

DS(on)

and V

GS(th)

1.7

1.1

0.5

Tj- Junction Temperature (°C)

Normalised RDS(on) and VGS(th)

v Temperature

-I

- Reverse Drain Current (A)

10m

-VSD - Source-Drain Voltage (V)

Source-Drain Diode Forward Voltage

T=+150°C

T=+25°C

T=+150°C VGS=-10V

T=+25°C

RDS(on)

ID=-0.6A

VGS=VDS

ID=-250uA

VGS(th)

0.4 0.6 1.0 1.2

100m

Vg=-5V

1.5

1.3

0.9

0.7

03.5 4.5

100m

9V 8V 7V

6V -VGS

10V

+150°C

+25°C 9V 10V 6V

Vg=-10V

Vg=-3V

TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE A - JULY 1999

TYPICAL CHARACTERISTICS

0.1 10 100 0 3

-VDS - Drain Source Voltage (V)

Capacitance v Drain-Source Voltage

200

C - Capacitance (pF)

ID=-0.6A

-V

- Gate-Source Voltage (V)

Q -Charge (nC)

Gate-Source Voltage v Gate Charge

VDS=-15V

Coss

Crss

Vgs=0V

f=1MHz

Ciss

300

250

150

100

0.5 1 1.5 2 2.5

3.5 4 4.5

VDS=-24V

Basic Gate Charge Waveform Gate Charge Test Circuit

Switching Time Waveforms Switching Time Test Circuit

ZXM61P03F

PROVISIONAL ISSUE A - JULY 1999

PACKAGE DIMENSIONS PAD LAYOUT DETAILS

DIM Millimetres Inches

Min Max Min Max

A 2.67 3.05 0.105 0.120

B 1.20 1.40 0.047 0.055

C– 1.10 – 0.043

D 0.37 0.53 0.0145 0.021

F 0.085 0.15 0.0033 0.0059

G NOM 1.9 NOM 0.075

K 0.01 0.10 0.0004 0.004

L 2.10 2.50 0.0825 0.0985

N NOM 0.95 NOM 0.037

ZXM61P03F

Zetex plc.

Fields New Road, Chadde rt on, Oldha m, OL9 -8NP, Unit ed Kingdom .

Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)

Fax: (44)161 622 4420

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right to alter without notice the specification, design, price or conditions of supply of any product or service.

PROVISIONAL ISSUE A - JULY 1999