2SK1817-M N-channel MOS-FET F-III Series 100V > Features - 0,08 20A 40W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 100 20 80 20 20 40 150 -55 ~ +150 Unit V A A A V W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R GSS DS(on) Forward Transconductance Input Capacitance Output Capacitance g C C oss Reverse Transfer Capacitance C rss Turn-On-Time ton (ton=td(on)+tr) t t t Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time - Thermal Characteristics Item Thermal Resistance t V t fs iss d(on) r d(off) f SD rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=100V Tch=25C VGS=0V Tch=125C VGS=20V VDS=0V ID=10A VGS=4V ID=10A VGS=10V ID=10A VDS=25V VDS=25V VGS=0V 10 Typ. Max. Unit V V A mA nA 1,5 10 0,2 10 0,070 2,5 500 1,0 100 0,120 0,053 0,080 20 1850 400 2780 600 S pF pF f=1MHz 120 180 pF VCC=30V ID=20A VGS=10V 5 50 350 8 75 530 ns ns ns RGS=25 IF=2xIDR VGS=0V Tch=25C 100 1,22 150 1,83 ns V IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C 70 Symbol R th(ch-a) Test conditions channel to air R channel to case th(ch-c) Min. 100 1,0 Min. FUJI ELECTRIC GmbH; Lyoner Strae 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56 Typ. ns Max. 62,5 Unit C/W 3,125 C/W 2SK1817-M N-channel MOS-FET 100V 0,08 20A F-III Series 40W > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. Tch Tch [C] Typical Drain-Source-On-State-Resistance vs. ID Gate Threshold Voltage vs. Tch ID [A] Tch [C] VDS [V] C [nF] 8 VDS [V] Qg [nC] Allowable Power Dissipation vs. TC IF [A] Forward Characteristics of Reverse Diode VGS [V] Typical Input Charge 7 6 VGS(th) [V] 5 Typical Capacitance vs. VDS VGS [V] gfs [S] RDS(ON) [] ID [A] Typical Forward Transconductance vs. ID 4 3 ID [A] ID [A] VDS [V] 2 RDS(ON) [] 1 Typical Transfer Characteristics 9 VSD [V] Safe operation area Zth(ch-c) [K/W] 12 11 ID [A] 10 PD [W] Transient Thermal impedance Tc [C] VDS [V] This specification is subject to change without notice! t [s]