Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KE3 Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage Tvj = 25C VRRM 1600 V Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output TC = 80C IRMSmax 115 A Durchlastrom Grenzeffektivwert proChip Forward current RMS maximum per Chip TC = 80C IFRMSM 80 A Stostrom Grenzwert tP = 10 ms, T vj = surge forward current tP = 10 ms, T vj = 150C Grenzlastintegral tP = 10 ms, T vj = 2 I t - value 25C IFSM I2 t 25C tP = 10 ms, T vj = 150C 500 A 400 A 1250 A2s 800 A2s Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Tvj = 25C VCES 1200 V Kollektor-Dauergleichstrom DC-collector current Tc = 80 C TC = 25 C IC,nom. 50 A IC 75 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, ICRM 100 A Gesamt-Verlustleistung total power dissipation TC = 25C Ptot 270 W VGES +/- 20V V IF 50 A IFRM 100 A 2 It 690 A2s Tvj = 25C VCES 1200 V TC = 80 C IC,nom. 40 A TC = 25 C IC 55 A T C = 80 C Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral I2t - value VR = 0V, tp = 10ms, Tvj = 125C Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C ICRM 80 A Gesamt-Verlustleistung total power dissipation TC = 25C Ptot 200 W VGES +/- 20V V IF 15 A IFRM 30 A Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms prepared by: Andreas Schulz date of publication:23.04.2002 approved by: Robert Severin revision: 2 1(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KE3 Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. VF - 1 - V Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Tvj = 150C, Schleusenspannung threshold voltage Tvj = 150C V(TO) - - 0,8 V Ersatzwiderstand slope resistance Tvj = 150C rT - - 6,5 m Sperrstrom reverse current Tvj = 150C, IR - 3 - mA RAA'+CC' - 4 - m min. typ. max. - 1,7 2,15 V - 2 - V VGE(TO) 5,0 5,8 6,5 V Cies - 3,5 - nF ICES - - 5 mA IGES - - 400 nA I F = 50 A V R = 1600 V Modul Leitungswiderstand, Anschlusse-Chip TC = 25C lead resistance, terminals-chip Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, IC = 50 A IC = 50 A Gate-Schwellenspannung gate threshold voltage VCE = VGE, IC = 2,0 mA Eingangskapazitat input capacitance f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut off current VGE = 0V, Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE =20V, Tvj =25C Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Tvj = 25C, Tvj = 25C, V CE = IC = INenn, V CC = 1200 V 600 V VGE = 15V, Tvj = 25C, R G = 18 Ohm VGE = 15V, Tvj = 125C, R G = 18 Ohm IC = INenn, 600 V V CC = VGE = 15V, Tvj = 25C, R G = 18 Ohm VGE = 15V, Tvj = 125C, R G = 18 Ohm IC = INenn, 600 V V CC = VGE = 15V, Tvj = 25C, R G = 18 Ohm VGE = 15V, Tvj = 125C, R G = 18 Ohm IC = INenn, 600 V V CC = VGE = 15V, Tvj = 25C, R G = 18 Ohm VGE = 15V, Tvj = 125C, R G = 18 Ohm IC = INenn, 600 V V CC = VGE = 15V, Tvj = 125C, R G = L = V CC = IC = INenn, VGE = 15V, Tvj = 125C, R G = VCE sat 18 Ohm td,on tr td,off tf - 85 - ns - 90 - ns - 30 - ns - 45 - ns - 420 - ns - 520 - ns - 65 - ns - 90 - ns Eon - 6,6 - mWs Eoff - 5,8 - mWs ISC - 200 - A 45 nH 600 V 18 Ohm 45 nH tP 10s, VGE 15V, L = RG = Tvj125C, VCC = 720 V 18 Ohm 2(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KE3 Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip TC = 25C lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy VGE = 0V, Tvj = 25C, IF = 50 A VGE = 0V, Tvj = 125C, IF = 50 A IF=INenn, - diF/dt = VGE = -10V, Tvj = 25C, V R = 600 V 600 V - diF/dt = 600 V VGE = -10V, Tvj = 125C, V R = 600 V - diF/dt = 600 V VGE = -10V, Tvj = 125C, V R = 600 V Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, IC = 40 A IC = 40 A Gate-Schwellenspannung gate threshold voltage VCE = VGE, IC = 1,5 mA Eingangskapazitat input capacitance f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut off current VGE = 0V, Tvj = 25C, V CE = Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25C Schaltverluste und -bedingungen Switching losses and conditions siehe Wechselrichter in Dbl FP40R12KE3 see inverter in datasheet FP40R12KE3 Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25C, Durchlaspannung forward voltage Tvj = 125C, Schaltverluste und -bedingungen Switching losses and conditions LCE - - 60 nH RCC'+EE' - 7 - m min. typ. max. - 1,65 2,15 V - 1,65 - V VF IRM - 51 - A - 50 - A Qr - 6,2 - As - 12 - As 1200 A/s VGE = -10V, Tvj = 25C, V R = Tvj = 25C, max. 1200 A/s VGE = -10V, Tvj = 25C, V R = IF=INenn, typ. 1200 A/s VGE = -10V, Tvj = 125C, V R = IF=INenn, min. 1200 V IF = 40 A IF = 40 A Erec - 2,1 - mWs - 4,4 - mWs min. typ. max. - 1,8 2,3 V - 2,15 - V VGE(TO) 5,0 5,8 6,5 V Cies - 2,5 - nF ICES - 5,0 500 mA IGES - - 400 nA min. typ. max. - 2,35 2,8 V - 2,55 - V min. typ. max. R25 - 5 - k R/R -5 5 % 20 mW VCE sat VF siehe Wechselrichter in Dbl FP15R12KE3 see inverter in datasheet FP15R12KE3 NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance TC = 25C Abweichung von R100 deviation of R100 TC = 100C, R 100 = 493 Verlustleistung power dissipation TC = 25C B-Wert B-value R2 = R1 exp [B(1/T2 - 1/T1)] P25 B25/50 3375 K 3(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KE3 Thermische Eigenschaften / Thermal properties RthJC Gleichr. Diode/ Rectif. Diode Innerer Warmewiderstand thermal resistance, junction to case min. typ. max. - - 0,65 Trans. Wechsr./ Trans. Inverter - - 0,45 K/W K/W Diode Wechsr./ Diode Inverter - - 0,75 K/W Trans. Bremse/ Trans. Brake - - 0,6 K/W Diode Bremse/ Diode Brake - - 1,5 K/W - 0,04 - K/W - 0,02 - K/W - 0,04 - K/W Ubergangs-Warmewiderstand Gleichr. Diode/ Rectif. Diode Paste=1W/m*K thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter grease=1W/m*K RthCK Diode Wechsr./ Diode Inverter Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 125 C 6 Nm Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al2O3 CTI comperative tracking index 225 Schraube M 5 Anzugsdrehmoment f. mech. Befestigung mounting torque M 3 - screw M 5 Gewicht weight G 300 g Luftstrecke clearance Pin-Erde Pin-GND 7,5 mm Kriechstrecke creeping distance Pin-Erde Pin-GND 10 mm Transiente Thermische Eigenschaften / Transient Thermal properties IGBT-Wechselrichter IGBT-Inverter Diode-Wechselrichter Diode-Inverter ri [K/W] i [s] ri [K/W] i [s] 1 5,077E-02 2,345E-03 7,637E-02 3,333E-03 2 7,893E-02 2,820E-01 4,933E-01 3,429E-02 3 2,032E-01 2,820E-02 1,421E-01 1,294E-01 4 1,142E-01 1,128E-01 4,501E-02 7,662E-01 4(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KE3 Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) Output characteristic Inverter (typical) VGE = 15 V 100 90 80 Tvj = 25C Tvj = 125C 70 IC [A] 60 50 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 4 4,5 5 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) Output characteristic Inverter (typical) Tvj = 125C 100 Vge=19V 90 Vge=17V Vge=15V 80 Vge=13V Vge=11V 70 Vge=9V IC [A] 60 50 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 VCE [V] 5(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KE3 Ubertragungscharakteristik Wechselr. (typisch) IC = f (VGE) Transfer characteristic Inverter (typical) VCE = 20 V 100 90 80 Tvj=25C 70 Tvj=125C IC [A] 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) IF = f (VF) 100 90 80 Tvj = 25C Tvj = 125C 70 IF [A] 60 50 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 VF [V] 6(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KE3 Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) Switching losses Inverter (typical) Tj = 125C, V GE = 15 V, VCC = 600 V RGon = RGoff = 18 Ohm 100 120 20 18 Eon Eoff 16 Erec E [mWs] 14 12 10 8 6 4 2 0 0 20 40 60 80 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) Eon = f (RG), Eoff = f (RG), Erec = f (RG) Tj = 125C, V GE = +-15 V , I c = Inenn , VCC = 600 V 12 10 Eon Eoff Erec E [mWs] 8 6 4 2 0 0 5 10 15 20 25 30 35 40 RG [ ] 7(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KE3 Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter ZthJC = f (t) 1 Zth-IGBT ZthJC [K/W] Zth-FWD 0,1 Ri und ti-Werte siehe S. 4 Ri and ti-Values see P. 4 0,01 0,001 0,01 0,1 1 10 t [s] Sicherer Arbeitsbereich IGBT-Wechselr. (RBSOA) Reverse bias save operating area (RBSOA) VGE = 15V, T j = 125C 120 100 IC,Modul 80 IC [A] IC,Chip 60 40 20 0 0 200 400 600 800 1000 1200 1400 VCE [V] 8(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KE3 Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) IC = f (VCE) Output characteristic brake-chopper-IGBT (typical) VGE = 15 V 80 70 Tvj = 25C Tvj = 125C 60 IC [A] 50 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 VCE [V] Durchlakennlinie der Brems-Chopper-Diode (typisch) IF = f (VF) Forward characteristic of brake-chopper-FWD (typical) 80 70 60 Tvj = 25C Tvj = 125C IF [A] 50 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 VF [V] 9(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KE3 Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) IF = f (VF) 100 90 80 70 Tvj = 25C Tvj = 150C IF [A] 60 50 40 30 20 10 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp R[ ] 10000 1000 100 0 20 40 60 80 100 120 140 160 TC [C] 10(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KE3 Schaltplan/ Circuit diagram 21 8 22 20 1 2 3 23 19 7 14 18 13 24 4 12 9 16 17 5 15 6 NTC 11 10 Gehauseabmessungen/ Package outlines Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. 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