Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP50R12KE3
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage Tvj = 25°C VRRM 1600 V
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output TC = 80°C IRMSmax 115 A
Durchlaßstrom Grenzeffektivwert proChip
Forward current RMS maximum per Chip TC = 80°C IFRMSM 80 A
Stoßstrom Grenzwert tP = 10 ms, Tvj = 25°C IFSM 500 A
surge forward current tP = 10 ms, Tvj = 150°C 400 A
Grenzlastintegral tP = 10 ms, Tvj = 25°C I2t1250 A2s
I2t - value tP = 10 ms, Tvj = 150°C 800 A2s
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage Tvj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom Tc = 80 °C IC,nom. 50 A
DC-collector current TC = 25 °C IC75 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current tP = 1 ms, TC = 80 °C ICRM 100 A
Gesamt-Verlustleistung
total power dissipation TC = 25°C Ptot 270 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage VGES +/- 20V V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current IF50 A
Periodischer Spitzenstrom
repetitive peak forw. current tP = 1 ms IFRM 100 A
Grenzlastintegral
I2t - value VR = 0V, tp = 10ms, Tvj = 125°C I2t690 A2s
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage Tvj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 40 A
DC-collector current TC = 25 °C IC55 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 80 A
Gesamt-Verlustleistung
total power dissipation TC = 25°C Ptot 200 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage VGES +/- 20V V
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current IF15 A
Periodischer Spitzenstrom
repetitive peak forw. current tP = 1 ms IFRM 30 A
prepared by: Andreas Schulz date of publication:23.04.2002
approved by: Robert Severin revision: 2
1(11)
DB-PIM-IGBT3_2Serie.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP50R12KE3
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate VISOL 2,5 kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier min. typ. max.
Durchlaßspannung
forward voltage Tvj = 150°C, IF = 50 A VF-1-V
Schleusenspannung
threshold voltage Tvj = 150°C V(TO) - - 0,8 V
Ersatzwiderstand
slope resistance Tvj = 150°C rT- - 6,5 mΩ
Sperrstrom
reverse current Tvj = 150°C, VR= 1600 V IR-3-mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip TC = 25°C RAA'+CC' - 4 - mΩ
Transistor Wechselrichter/ Transistor Inverter min. typ. max.
Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 50 A VCE sat - 1,7 2,15 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 50 A - 2 - V
Gate-Schwellenspannung
gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 2,0 mA VGE(TO) 5,0 5,8 6,5 V
Eingangskapazität
input capacitance f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V Cies - 3,5 - nF
Kollektor-Emitter Reststrom
collector-emitter cut off current VGE = 0V, Tvj = 25°C, VCE = 1200 V ICES --5mA
Gate-Emitter Reststrom
gate-emitter leakage current VCE = 0V, VGE =20V, Tvj =25°C IGES - - 400 nA
Einschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 600 V
turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 18 Ohm td,on -85-ns
VGE = ±15V, Tvj = 125°C, RG = 18 Ohm - 90 - ns
Anstiegszeit (induktive Last) IC = INenn, VCC = 600 V
rise time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 18 Ohm tr-30-ns
VGE = ±15V, Tvj = 125°C, RG = 18 Ohm - 45 - ns
Abschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 600 V
turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 18 Ohm td,off - 420 - ns
VGE = ±15V, Tvj = 125°C, RG = 18 Ohm - 520 - ns
Fallzeit (induktive Last) IC = INenn, VCC = 600 V
fall time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 18 Ohm tf-65-ns
VGE = ±15V, Tvj = 125°C, RG = 18 Ohm - 90 - ns
Einschaltverlustenergie pro Puls IC = INenn, VCC = 600 V
turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 18 Ohm Eon - 6,6 - mWs
Lσ = 45 nH
Abschaltverlustenergie pro Puls IC = INenn, VCC = 600 V
turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 18 Ohm Eoff - 5,8 - mWs
Lσ = 45 nH
Kurzschlußverhalten tP ≤ 10µs, VGE ≤ 15V, RG = 18 Ohm
SC Data Tvj≤125°C, VCC =720 V ISC - 200 - A
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DB-PIM-IGBT3_2Serie.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP50R12KE3
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values min. typ. max.
Modulinduktivität
stray inductance module LσCE - - 60 nH
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip TC = 25°C RCC'+EE' - 7 - mΩ
Diode Wechselrichter/ Diode Inverter min. typ. max.
Durchlaßspannung VGE = 0V, Tvj = 25°C, IF = 50 A VF- 1,65 2,15 V
forward voltage VGE = 0V, Tvj = 125°C, IF = 50 A - 1,65 - V
Rückstromspitze IF=INenn, - diF/dt = 1200 A/µs
peak reverse recovery current VGE = -10V, Tvj = 25°C, VR = 600 V IRM -51- A
VGE = -10V, Tvj = 125°C, VR = 600 V - 50 - A
Sperrverzögerungsladung IF=INenn, - diF/dt = 1200 A/µs
recovered charge VGE = -10V, Tvj = 25°C, VR = 600 V Qr- 6,2 - µAs
VGE = -10V, Tvj = 125°C, VR = 600 V - 12 - µAs
Abschaltenergie pro Puls IF=INenn, - diF/dt = 1200 A/µs
reverse recovery energy VGE = -10V, Tvj = 25°C, VR = 600 V Erec - 2,1 - mWs
VGE = -10V, Tvj = 125°C, VR = 600 V - 4,4 - mWs
Transistor Brems-Chopper/ Transistor Brake-Chopper min. typ. max.
Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 40 A VCE sat - 1,8 2,3 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 40 A - 2,15 - V
Gate-Schwellenspannung
gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 1,5 mA VGE(TO) 5,0 5,8 6,5 V
Eingangskapazität
input capacitance f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V Cies - 2,5 - nF
Kollektor-Emitter Reststrom
collector-emitter cut off current VGE = 0V, Tvj = 25°C, VCE = 1200 V ICES - 5,0 500 mA
Gate-Emitter Reststrom
gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA
Schaltverluste und -bedingungen
Switching losses and conditions
Diode Brems-Chopper/ Diode Brake-Chopper min. typ. max.
Durchlaßspannung Tvj = 25°C, IF = 40 A VF- 2,35 2,8 V
forward voltage Tvj = 125°C, IF = 40 A - 2,55 - V
Schaltverluste und -bedingungen
Switching losses and conditions
NTC-Widerstand/ NTC-Thermistor min. typ. max.
Nennwiderstand
rated resistance TC = 25°C R25 -5-
kΩ
Abweichung von R100
deviation of R100 TC = 100°C, R100 = 493 Ω∆R/R -5 5 %
Verlustleistung
power dissipation TC = 25°C P25 20 mW
B-Wert
B-value R2 = R1 exp [B(1/T2 - 1/T1)] B25/50 3375 K
siehe Wechselrichter in Dbl FP40R12KE3
see inverter in datasheet FP40R12KE3
siehe Wechselrichter in Dbl FP15R12KE3
see inverter in datasheet FP15R12KE3
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DB-PIM-IGBT3_2Serie.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP50R12KE3
Thermische Eigenschaften / Thermal properties min. typ. max.
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode RthJC - - 0,65 K/W
thermal resistance, junction to case Trans. Wechsr./ Trans. Inverter - - 0,45 K/W
Diode Wechsr./ Diode Inverter - - 0,75 K/W
Trans. Bremse/ Trans. Brake - - 0,6 K/W
Diode Bremse/ Diode Brake - - 1,5 K/W
Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode λPaste=1W/m*K RthCK - 0,04 - K/W
thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter λgrease=1W/m*K - 0,02 - K/W
Diode Wechsr./ Diode Inverter - 0,04 - K/W
Höchstzulässige Sperrschichttemperatur
maximum junction temperature Tvj - - 150 °C
Betriebstemperatur
operation temperature Top -40 - 125 °C
Lagertemperatur
storage temperature Tstg -40 - 125 °C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation Al2O3
CTI
comperative tracking index 225
Anzugsdrehmoment f. mech. Befestigung Schraube M 5 M 3 - 6 Nm
mounting torque screw M 5
Gewicht
weight G 300 g
Luftstrecke
clearance Pin-Erde
Pin-GND 7,5 mm
Kriechstrecke
creeping distance Pin-Erde
Pin-GND 10 mm
Transiente Thermische Eigenschaften / Transient Thermal properties
ri [K/W]
1 5,077E-02
2 7,893E-02
3 2,032E-01
4 1,142E-01
3,429E-02
2,345E-03 3,333E-037,637E-02
4,933E-01
1,294E-01
7,662E-01
IGBT-Wechselrichter
IGBT-Inverter Diode-Wechselrichter
Diode-Inverter
ri [K/W]τi [s] τi [s]
2,820E-01
2,820E-02
1,128E-01
1,421E-01
4,501E-02
4(11)
DB-PIM-IGBT3_2Serie.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP50R12KE3
IC [A]
VCE [V]
IC [A]
VCE [V]
Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)
Output characteristic Inverter (typical) VGE = 15 V
0
10
20
30
40
50
60
70
80
90
100
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5
Tvj = 25°C
Tvj = 125°C
0
10
20
30
40
50
60
70
80
90
100
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5
Vge=19V
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)
Output characteristic Inverter (typical) Tvj = 125°C
5(11)
DB-PIM-IGBT3_2Serie.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP50R12KE3
IC [A]
VGE [V]
IF [A]
VF [V]
Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) IF = f (VF)
Forward characteristic of FWD Inverter (typical)
0
10
20
30
40
50
60
70
80
90
100
0 2 4 6 8 10 12 14
Tvj=25°C
Tvj=125°C
Übertragungscharakteristik Wechselr. (typisch) IC = f (VGE)
Transfer characteristic Inverter (typical) VCE = 20 V
0
10
20
30
40
50
60
70
80
90
100
0 0,5 1 1,5 2 2,5 3
Tvj = 25°C
Tvj = 125°C
6(11)
DB-PIM-IGBT3_2Serie.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP50R12KE3
600 V
18 Ohm
E [mWs
]
IC [A]
600 V
E [mWs
]
RG [Ω
ΩΩ
Ω]
Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC =
Switching losses Inverter (typical) Tj = 125°C, VGE = ±15 V, RGon = RGoff =
0
2
4
6
8
10
12
14
16
18
20
0 20 40 60 80 100 120
Eon
Eoff
Erec
0
2
4
6
8
10
12
0 5 10 15 20 25 30 35 40
Eon
Eoff
Erec
Schaltverluste Wechselr. (typisch) Eon = f (RG), Eoff = f (RG), Erec = f (RG)
Switching losses Inverter (typical) Tj = 125°C, VGE = +-15 V , Ic = Inenn , VCC =
7(11)
DB-PIM-IGBT3_2Serie.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP50R12KE3
ZthJC [K/W]
t [s]
IC [A]
VCE [V]
Transienter Wärmewiderstand Wechselr. Z
thJC = f (t)
Transient thermal impedance Inverter
0,01
0,1
1
0,001 0,01 0,1 1 10
Zth-IGBT
Zth-FWD
0
20
40
60
80
100
120
0 200 400 600 800 1000 1200 1400
IC,Modul
IC,Chip
Ri und ti-Werte siehe S. 4
Ri and ti-Values see P. 4
Sicherer Arbeitsbereich IGBT-Wechselr. (RBSOA)
Reverse bias save operating area (RBSOA) VGE = 15V, Tj = 125°C
8(11)
DB-PIM-IGBT3_2Serie.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP50R12KE3
IC [A]
VCE [V]
IF [A]
VF [V]
0
10
20
30
40
50
60
70
80
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5
Tvj = 25°C
Tvj = 125°C
Durchlaßkennlinie der Brems-Chopper-Diode (typisch) IF = f (VF)
Forward characteristic of brake-chopper-FWD (typical)
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) IC = f (VCE)
Output characteristic brake-chopper-IGBT (typical) VGE = 15 V
0
10
20
30
40
50
60
70
80
0 0,5 1 1,5 2 2,5 3 3,5 4
Tvj = 25°C
Tvj = 125°C
9(11)
DB-PIM-IGBT3_2Serie.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP50R12KE3
IF [A]
VF [V]
R[Ω
Ω
Ω
Ω]
TC [°C]
Durchlaßkennlinie der Gleichrichterdiode (typisch) IF = f (VF)
Forward characteristic of Rectifier Diode (typical)
0
10
20
30
40
50
60
70
80
90
100
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8
Tvj = 25°C
Tvj = 150°C
NTC- Temperaturkennlinie (typisch) R = f (T)
NTC- temperature characteristic (typical)
Rtyp
100
1000
10000
100000
0 20 40 60 80 100 120 140 160
10(11)
DB-PIM-IGBT3_2Serie.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP50R12KE3
Schaltplan/ Circuit diagram
G
e
hä
usea
b
messungen
/
P
ac
k
age out
li
nes
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
2 31
21
23
22
24
20 19
13
4
16 15
11
18 17
12
56
10
7
14
NTC
9
8
11(11)
DB-PIM-IGBT3_2Serie.xls
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