SiHP35N60E
www.vishay.com Vishay Siliconix
S16-1157-Rev. A, 13-Jun-16 1Document Number: 91580
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
E Series Power MOSFET
FEATURES
• A specific on resistance (m-cm2) reduction of
25 %
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Power factor correction power supplies (PFC)
• Hard switching PWM stages
•Computing
- Switch mode power supplies (SMPS)
• Lighting
- Light emitting diode (LED)
- High intensity discharge (HID)
• Telecom
- Server power supplies
• Renewable energy
- Photovoltaic inverters
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Uniterruptable power supplies
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
PRODUCT SUMMARY
VDS (V) at TJ max. 650
RDS(on) typ. () at 25 °C VGS = 10 V 0.082
Qg max. (nC) 132
Qgs (nC) 22
Qgd (nC) 46
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
GD
S
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free and Halogen-free SiHP35N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ± 30
Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C ID
32
ATC = 100 °C 20
Pulsed Drain Current a IDM 80
Linear Derating Factor 2W/°C
Single Pulse Avalanche Energy b EAS 691 mJ
Maximum Power Dissipation PD250 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Drain-Source Voltage Slope TJ = 125 °C dV/dt 57 V/ns
Reverse Diode dV/dt d31
Soldering Recommendations (Peak Temperature) c for 10 s 300 °C
SiHP35N60E
www.vishay.com Vishay Siliconix
S16-1157-Rev. A, 13-Jun-16 2Document Number: 91580
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA -62
°C/W
Maximum Junction-to-Case (Drain) RthJC -0.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.70 - V/°C
Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VGS = ± 30 V - - ± 1 μA
Zero Gate Voltage Drain Current IDSS
VDS = 600 V, VGS = 0 V - - 1 μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 25
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 17 A - 0.082 0.094
Forward Transconductance gfs VDS = 30 V, ID = 17 A - 13 - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 100 V,
f = 1 MHz
- 2760 -
pF
Output Capacitance Coss - 118 -
Reverse Transfer Capacitance Crss -5-
Effective Output Capacitance, Energy
Related a Co(er)
VDS = 0 V to 480 V, VGS = 0 V
- 118 -
Effective Output Capacitance, Time
Related b Co(tr) - 429 -
Total Gate Charge Qg
VGS = 10 V ID = 17 A, VDS = 480 V
-88132
nC Gate-Source Charge Qgs -22-
Gate-Drain Charge Qgd -46-
Turn-On Delay Time td(on)
VDD = 480 V, ID = 17 A,
VGS = 10 V, Rg = 9.1
-2958
ns
Rise Time tr -6192
Turn-Off Delay Time td(off) -78117
Fall Time tf -3264
Gate Input Resistance Rgf = 1 MHz, open drain 0.25 0.5 1
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--32
A
Pulsed Diode Forward Current ISM --80
Diode Forward Voltage VSD TJ = 25 °C, IS = 17 A, VGS = 0 V - 0.9 1.2 V
Reverse Recovery Time trr TJ = 25 °C, IF = IS = 17 A,
dI/dt = 100 A/μs, VR = 25 V
- 455 910 ns
Reverse Recovery Charge Qrr -816μC
Reverse Recovery Current IRRM -30-A
S
D
G
SiHP35N60E
www.vishay.com Vishay Siliconix
S16-1157-Rev. A, 13-Jun-16 3Document Number: 91580
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Coss and Eoss vs. VDS
0
20
40
60
80
100
0 5 10 15 20 25 30
ID, Drain-to-Source Current (A)
VDS, Drain-to-Source Voltage (V)
TJ = 25 °C
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
BOTTOM 5 V
6 V
0
10
20
30
40
50
0 5 10 15 20 25 30
ID, Drain-to-Source Current (A)
VDS, Drain-to-Source Voltage (V)
TJ = 150 °C
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
BOTTOM 5 V
60
0
20
40
60
80
100
0 5 10 15 20 25
ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
TJ = 150 °C
TJ= 25 °C
VDS = 27.4 V
0
0.5
1.0
1.5
2.0
2.5
3.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
RDS(on), Drain-to-Source On-Resistance
(Normalized)
TJ, Junction Temperature (°C)
ID = 17 A
VGS = 10 V
0.1
1
10
100
1000
10 000
100 000
0 100 200 300 400 500 600
C, Capacitance (pF)
VDS, Drain-to-Source Voltage (V)
Ciss
Coss
Crss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
SiHP35N60E
www.vishay.com Vishay Siliconix
S16-1157-Rev. A, 13-Jun-16 4Document Number: 91580
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Safe Operating Area
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Temperature vs. Drain-to-Source Voltage
0
4
8
12
16
20
24
0 30 60 90 120 150 180
VGS, Gate-to-Source Voltage (V)
Qg, Total Gate Charge (nC)
VDS = 480 V
VDS = 300 V
VDS = 120 V
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ISD, Reverse Drain Current (A)
VSD, Source-Drain Voltage (V)
TJ = 150 °C TJ = 25 °C
VGS = 0 V
0.01
0.1
1
10
100
1 10 100 1000
ID, Drain Current (A)
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
Limited by R
DS
(
on
)
*
1 ms
I
DM
Limited
T
C
= 25 °C
TJ = 150 °C
Single Pulse BVDSS Limited
10 ms
100 μs
Operation in this Area
Limited by R
DS
(
on
)
0
10
20
30
25 50 75 100 125 150
ID, Drain Current (A)
TC, Case Temperature (°C)
600
625
650
675
700
725
750
775
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Breakdown Voltage (V)
TJ, Junction Temperature (°C)
ID = 250 μA
SiHP35N60E
www.vishay.com Vishay Siliconix
S16-1157-Rev. A, 13-Jun-16 5Document Number: 91580
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
Fig. 13 - Switching Time Test Circuit
Fig. 14 - Switching Time Waveforms
Fig. 15 - Unclamped Inductive Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
Fig. 17 - Basic Gate Charge Waveform
Fig. 18 - Gate Charge Test Circuit
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Normalized Effective Transient
Thermal Impedance
Pulse Time (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10 V
+
-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-V
DD
10 V
Vary t
p
to obtain
required I
AS
IAS
VDS
VDD
VDS
tp
QGS QGD
QG
V
G
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
SiHP35N60E
www.vishay.com Vishay Siliconix
S16-1157-Rev. A, 13-Jun-16 6Document Number: 91580
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91580.
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED