2SD1609, 2SD1610 Silicon NPN Epitaxial ADE-208-916 (Z) 1st. Edition Sep. 2000 Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Collector power dissipation PC 1.25 1.25 W Junction temperature Tj 150 150 C Storage temperature Tstg -45 to +150 -45 to +150 C 2SD1609, 2SD1610 Electrical Characteristics (Ta = 25C) 2SD1609 2SD1610 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 160 -- -- 200 -- -- V I C = 10 A, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 160 -- -- 200 -- -- V I C = 1 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 5 -- -- 5 -- -- V I E = 10 A, IC = 0 Collector cutoff current I CBO -- -- 10 -- -- -- A VCB = 140 V, IE = 0 -- -- -- -- -- 10 VCB = 160 V, IE = 0 60 -- 320 60 -- 320 VCE = 5 V, IC = 10 mA hFE2 30 -- -- 30 -- -- VCE = 5 V, IC = 1 mA Base to emitter voltage VBE -- -- 1.5 -- -- 1.5 V VCE = 5 V, IC = 10 mA Collector to emitter saturation voltage -- -- 2 -- -- 2 V I C = 30 mA, IB = 3 mA Gain bandwidth product f T -- 140 -- -- 140 -- MHz VCE = 5 V, IC = 10 mA Collector output capacitance -- 3.8 -- -- 3.8 -- pF VCB = 10 V, IE = 0, f = 1 MHz DC current tarnsfer ratio hFE1* Note: 1 VCE(sat) Cob 1. The 2SD1609 and 2SD1610 are grouped by h FE1 as follows. B C D 60 to 120 100 to 200 160 to 320 Maximum Collector Dissipation Curve Typical Output Characteristics 1.0 0.5 0 2 20 Collector current IC (mA) Collector power dissipation PC (W) 1.5 50 100 Ambient temperature Ta (C) 150 16 12 8 4 0 120 110 100 90 80 70 60 50 40 30 20 10 A IB = 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 2SD1609, 2SD1610 DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 500 100 DC current transfer ratio hFE 20 10 -25 50 Ta = 7 5C 25 Collector current IC (mA) VCE = 5 V 5 2 VCE = 5 V Pulse 200 Ta = 75C 100 25 50 20 10 5 1 0 0.2 0.6 0.8 0.4 Base to emitter voltage VBE (V) 1 1.0 2 5 10 20 50 Collector current IC (mA) 100 Gain Bandwidth Product vs. Collector Current Saturation Voltage vs. Collector Current 5 500 Gain bandwidth product fT (MHz) Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) -25 IC = 10 IB Pulse 2 VBE(sat) 1.0 0.5 Ta = -25C 75 0.2 VCE(sat) 25 75 25 25C 0.1 Ta = - 0.05 1 2 5 20 50 10 Collector current IC (mA) 100 VCE = 10 V 200 100 50 20 10 5 0.5 1.0 2 5 10 20 Collector current IC (mA) 50 3 2SD1609, 2SD1610 Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 50 10 5 2 1.0 0.5 4 f = 1 MHz IE = 0 20 1 20 50 100 2 5 10 Collector to base voltage VCB (V) 2SD1609, 2SD1610 Package Dimensions Unit: mm 2.7 0.4 120 3.7 0.7 11.0 0.5 12 0 2.3 0.3 3.1 +0.15 -0.1 12 0 8.0 0.5 15.6 0.5 1.1 0.8 2.29 0.5 2.29 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Mass (reference value) TO-126 Mod -- -- 0.67 g 5 2SD1609, 2SD1610 Cautions 1. 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