2SD1609, 2SD1610
Silicon NPN Epitaxial
ADE-208-916 (Z)
1st. Edition
Sep. 2000
Application
Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110
Outline
1. Emitter
2. Collector
3. Base
TO-126 MOD
123
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SD1609 2SD1610 Unit
Collector to base voltage VCBO 160 200 V
Collector to emitter voltage VCEO 160 200 V
Emitter to base voltage VEBO 55V
Collector current IC100 100 mA
Collector power dissipation PC1.25 1.25 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –45 to +150 –45 to +150 °C
2SD1609, 2SD1610
2
Electrical Characteristics (Ta = 25°C)
2SD1609 2SD1610
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage V(BR)CBO 160 — — 200 — — V IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage V(BR)CEO 160 — — 200 — — V IC = 1 mA, RBE = ∞
Emitter to base
breakdown voltage V(BR)EBO 5——5——VI
E
= 10 µA, IC = 0
Collector cutoff current ICBO ——10———µAV
CB = 140 V, IE = 0
—————10 V
CB = 160 V, IE = 0
DC current tarnsfer ratio hFE1*160 — 320 60 — 320 VCE = 5 V, IC = 10 mA
hFE2 30 — — 30 — — VCE = 5 V, IC = 1 mA
Base to emitter voltage VBE — — 1.5 — — 1.5 V VCE = 5 V, IC = 10 mA
Collector to emitter
saturation voltage VCE(sat) ——2 ——2 V I
C
= 30 mA, IB = 3 mA
Gain bandwidth product fT— 140 — — 140 — MHz VCE = 5 V, IC = 10 mA
Collector output
capacitance Cob — 3.8 — — 3.8 — pF VCB = 10 V, IE = 0,
f = 1 MHz
Note: 1. The 2SD1609 and 2SD1610 are grouped by hFE1 as follows.
BCD
60 to 120 100 to 200 160 to 320
Maximum Collector Dissipation
Curve
1.5
1.0
0.5
0 50 100 150
Ambient temperature Ta (°C)
Collector power dissipation PC (W)
Typical Output Characteristics
20
16
12
8
4
024
Collector to emitter voltage VCE (V) 1086
Collector current IC (mA)
IB = 0
10 µA
20
30
40
60
70
80
90
100
110
120
50
2SD1609, 2SD1610
3
100
50
20
10
5
2
10 0.2
Collector current IC (mA)
0.4
Base to emitter voltage VBE (V)
0.6 1.00.8
Typical Transfer Characteristics
VCE = 5 V
Ta = 75°C
–25
25
500
200
100
50
20
10
51 2 20 10010 50
DC current transfer ratio hFE
5
Collector current IC (mA)
VCE = 5 V
Pulse
DC Current Transfer Ratio vs.
Collector Current
Ta = 75°C
25 –25
Saturation Voltage vs. Collector Current
IC = 10 IB
Pulse
5
2
1.0
0.5
0.2
0.1
0.05
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)
12 10
Collector current IC (mA)
55020 100
VBE(sat)
VCE(sat)
Ta = –25°C
Ta = –25°C
25
75
75
25
Gain Bandwidth Product vs.
Collector Current
500
200
100
50
20
10
51.00.5 2
Collector current IC (mA)
2010 505
Gain bandwidth product fT (MHz)
VCE = 10 V
2SD1609, 2SD1610
4
50
20
10
5
2
1.0
0.51
Collector output capacitance Cob (pF)
2510
Collector to base voltage VCB (V)
20 10050
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
IE = 0
2SD1609, 2SD1610
5
Package Dimensions
3.1
φ+0.15
–0.1
8.0 ± 0.5
2.3 ± 0.3
1.1
3.7 ± 0.7
11.0 ± 0.5
15.6 ± 0.5
0.8
2.29 ± 0.5 2.29 ± 0.5 0.55 1.2
2.7 ± 0.4
120°
120°
120°
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
TO-126 Mod
—
—
0.67 g
Unit: mm
2SD1609, 2SD1610
6
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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