Parameter Symbol Unit
Repetitive peak reverse voltage
Continuous reverse voltage
RMS voltage
voltage
Maximum forward
IF=10.0A
Maxium Forward surge current, 8.3ms
singlehalf sine-wave superimposed on
rate load (JEDEC method)
VR=VRRM TA=25°C
TA=100°CVR=VRRM
Page 1
QW-BB035
Chip Schottky Barrier Rectifier
REV:A
Comchip Technology CO., LTD.
VRRM
VR
VRMS
IO
VF
IFSM
IR
RθJc
TJ
20
20
14
40
40
28
60
60
42
20.0
0.75
150
0.5
50
2.0
80
80
56
150
150
105
V
V
V
A
V
A
mA
°C/W
°C
0.55 1.00
Operating temperature
Storage temperature TSTG -65 to +175 °C
-55 to +125 -55 to +150
Features
-Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
-Low profile surface mounted application in order to
optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Dimensions in inches and (millimeters)
D2PAK
Reverse Voltage: 20 to 200 Volts
Forward Current: 20.0 Amp
RoHS Device
CDBD2020-G Thru. CDBD20200-G
Mechanical data
2020-G
CDBD
2040-G
CDBD
2050-G
CDBD
2060-G
CDBD
2080-G
CDBD
20150-G
CDBD
50
50
35
Junction to Case
0.402(10.20)
0.386(9.80)
0.192(4.8)
0.176(4.4)
0.370(9.40)
0.354(9.00)
0.205(5.20)
0.189(4.80)
0.063(1.60)
0.055(1.40)
0.024(0.60)
0.016(0.40)
0.055(1.40)
0.047(1.20)
0.185(4.70)
0.169(4.30)
0.012(0.30)
0.004(0.10)
0.108(2.70)
0.092(2.30)
0.046(1.20)
0.032(0.80)
Case: TO-263/D2PAK, molded plastic.-
Terminals: solderable per MIL-STD-750, -
method 2026.
Polarity: Indicated by cathode band.-
-Weight:1.46 gram(approx.).
Weunting Position: Any-
30
30
21
2030-G
CDBD
100
100
70
20100-G
CDBD
20200-G
CDBD
200
200
140
0.85
IR
mA
PIN 1
PIN 3 PIN 2
2
13
45
45
31.5
2045-G
CDBD
Maximum Forward rectified current
(See fig. 1)
MaximumReverse
current
Typ.Thermal
resistance
Maximum Ratings (At Ta=25°C, unless otherwise noted)