TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
1
High Power Ka-Band Absorptive SPDT Switch TGS4304
Key Features and Performance
•
32 -
40 GHz Frequency Range
•
> 33 dBm Input P1dB @ VC = +10V
•
On Chip Biasing Resistors
•
On Chip DC Blocks
•
< 1.0 dB Midband
Insertion Loss
•
< 4ns Switching Speed
•
VPIN Technology
•
Chip Dimensions:
1.58 x 1.10 x 0.10 mm
(0.043 x 0.062 x 0.004 inches)
Description
The TriQuint TGS4304 is a GaAs
absorptive single-pole, double-throw
(SPDT) PIN monolithic switch designed
to operate over the Ka-Band frequency
range. This switch maintains a low
insertion loss with high power handling of
33dBm or greater input P1dB at VC
=
+10V. These advantages, along with the
small size of the chip, make the
TGS4304 ideal for use in communication
and transmit/receive applications.
The TGS4304 is 100% DC & RF tested
on-wafer to ensure performance
compliance.
Lead free and RoHS
compliant.
Primary Applications
•
Ka-Band Transmit / Receive
•
Point-to-Point Radio
•
Point-to-Multipoint Radio
Note: This device is early in the characterization process prior
to finalizing all electrical test specifications. Specifications are subject to
change without notice.
Measured Data
VA
= +5V, IA
≈
0mA, VB
= -4V, IB
= 30mA
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
32 33 34 35 36 37 38 39 40
Frequency (GHz)
S21 (dB)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
S11,S22 (dB)
S21
S11
S22
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
2
TABLE I
MAXIMUM RATINGS
Symbol Parameter 1/ Value Notes
VC Control Voltage -5V to +25V 2/
IC Control Current 34 mA 2/
PIN Input Continuous Wave Power 35 dBm
TM Mounting Temperature (30 Seconds) 320 0C
TSTG Storage Temperature -65 to 150 0C
1/ These ratings represent the maximum operable values for this device.
2/ VC and IC are per bias pad.
3/ Operation above 30dBm requires control voltages above +7.5V.
TGS4304
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25°C, Nominal)
(V
A
= +5V, I
A
= 0mA, V
B
= -4V, I
B
= 30mA)
Symbol Parameter Test Conditions Typ Units Notes
IL Insertion Loss
F = 32 – 34 GHz
F = 34 – 37 GHz
F = 37 – 40 GHz
1.3
0.9
1.3
dB
RL Return Loss F = 32 – 40 GHz 10 dB
P1dB
Output Power @
1dB Gain
Compression
V
C
= +5 V
V
C
= +7.5 V
Vc = +10 V
V
C
= +20 V
31
33
34
34.5
dBm 1/
Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
1/ Frequency = 30GHz
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
3
TGS4304
TABLE III
TRUTH TABLE
Selected RF
Output VAVB
RF Out A ≥ +5V @
~0mA
-4V @
30mA
RF Out B -4V @
30mA
≥ +5V @
~0mA
Selected RF
Output IAIB
RF Out A ≥ +5V @
~0mA 30mA
RF Out B 30mA ≥ +5V @
~0mA
Operation at RF power levels >30 dBm requires increasing the positive
voltage level to put a larger reverse bias on the diodes while the negative
voltage level remains at -4V with a current of approximately 30mA. If you
are using -5V, use alternate assembly with off chip resistors.
Bond pads IA and IB bypass the on-chip series resistors to allow adjustment
of the current to the diodes in their forward biased state.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
4
TGS4304
Measured Performance
On State
Off State
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
Frequency (GHz)
S21 (dB)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
S11,S22 (dB)
S21
S11
S22
-80
-70
-60
-50
-40
-30
-20
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
Frequency (GHz)
S31 (dB)
-30
-20
-10
0
10
20
30
S11,S33 (dB)
S31
S11
S33
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
5
-3
-2.5
-2
-1.5
-1
-0.5
18 20 22 24 26 28 30 32 34 36
Pin (dBm)
Gain (dB)
Va=20 V
Va=15 V
Va=10 V
Va=7.5 V
Va=5 V
Measured Performance
30 GHz
|Ib| = 30 mA
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
6
TGS4304
Measured Performance
On State
Measurements include connector / fixture losses of ~ 1dB
Off State
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
Frequency (GHz)
S31 (dB)
-40C
+24C
+85C
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
Frequency (GHz)
S21 (dB)
-40C
+24C
+85C
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
7
Mechanical Drawing TGS4304
Units: millimeters (inches)
Thickness: 0.100 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.051 (0.002)
GND IS BACKSIDE OF MMIC
Bond Pad #1 (RF In) 0.15 x 0.10 (0.006 x 0.004)
Bond Pad #2 (RF Out A) 0.10 x 0.15 (0.004 x 0.006)
Bond Pad #3 (VA) 0.10 x 0.10 (0.004 x 0.004)
Bond Pad #4 (IA) 0.15 x 0.10 (0.006 x 0.004)
Bond Pad #5 (IB) 0.15 x 0.10 (0.006 x 0.004)
Bond Pad #6 (VB) 0.10 x 0.10 (0.004 x 0.004)
Bond Pad #7 (RF Out B) 0.10 x 0.15 (0.004 x 0.006)
0.00 [0.000]
0.10 [0.004]
0.79 [0.031]
0.49 [0.019]
0.34 [0.013]
1.09 [0.043]
1.24 [0.049]
1.48 [0.058]
1.58 [0.062]
0.00 [0.000]
0.10 [0.004]
0.45 [0.018]
1.00 [0.039]
1.10 [0.043]
1
2
3456
7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
8
Chip Assembly & Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGS4304
RF Input
RF Output A RF Output B
VA VB
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
9
Alternate Chip Assembly & Bonding Diagram TGS4304
RF Input
RF Output A RF Output B
VA VB
RR
TABLE IV
BIAS RESISTOR VALUES
Maximum
Negative Bias
Voltage
R
-5V 33 Ohms
-7.5V 117 Ohms
-10V 200 Ohms
-15V 367 Ohms
-20V 533 Ohms
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
10
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 200°C.
Assembly Process Notes
TGS4304
