SANGDEST
MICROELECTRONICS
Technical Data
Green Products
Data Sheet N1226, Rev. C
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn
403CNQ… SERIES
403CNQ080/403CNQ100 SCHOTTKY RECTIFIER
Applications:
High current switching power supply Plating power supply Free-Wheeling diodes
Reverse battery protection Converters UPS System Welding
Features:
175
T
J
operation
Center tap module
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm/ Inches
PRM4 (Non-Isolated)
MARKING,MOLDING RESIN
Marking for 403CNQ080/100, 1st row SS YYWWL, 2nd row 403CNQ080/100
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
Molding resin
Epoxy resin UL:94V-0
SANGDEST
MICROELECTRONICS
Technical Data
Green Products
Data Sheet N1226, Rev. C
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn
403CNQ… SERIES
Maximum Ratings:
Characteristics Symbol Condition Max. Units
80 403CNQ080 Peak Inverse Voltage V
RWM
- 100
403CNQ100 V
200
per leg Max. Average Forward
Current I
F(AV)
50% duty cycle @T
C
=105°C,
rectangular wave form 400
per device A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
I
FSM
8.3 ms, half Sine pulse
3960
A
Non-Repetitive Avalanche
Energy(peg leg) E
AS
T
J
=25,I
AS
=1A,L=30mH 15 mJ
Repetitive Avalanche
Current(peg leg) I
AR
Current decaying linearly to
zero in 1 µsec Frequency
limited by T
J
max. V
A
=1.5×
V
R
typical
1 A
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
V
F1
@ 200A, Pulse, T
J
= 25 °C
@ 400A, Pulse, T
J
= 25 °C 0.83
0.97 V
Max. Forward Voltage Drop
(per leg) *
V
F2
@ 200A, Pulse, T
J
= 125 °C
@ 400A, Pulse, T
J
= 125 °C 0.69
0.82 V
I
R1
@V
R
= rated V
R
T
J
= 25 °C 6 mA
Max. Reverse Current (per
leg) * I
R2
@V
R
= rated V
R
T
J
= 125 °C 140 mA
Max. Junction Capacitance
(per leg) C
T
@V
R
= 5V, T
C
= 25 °C
f
SIG
= 1MHz 5500 pF
Typical Series Inductance
(per leg) L
S
Measured lead to lead 5 mm
from package body 5.0 nH
Max. Voltage Rate of Change
dv/dt - 10,000 V/µs
*
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics Symbol Condition Specification Units
Max. Junction Temperature T
J
- -55 to +175 °C
Max. Storage Temperature T
stg
- -55 to +175 °C
Maximum Thermal
Resistance Junction to Case
(per leg) R
θJC
DC operation 0.20 °C/W
Maximum Thermal
Resistance Junction to Case
(per package) R
θJC
DC operation 0.10 °C/W
Typical Thermal Resistance,
case to Heat Sink R
θcs
Mounting surface, smooth
and greased 0.10 °C/W
Mounting
Torque 24(min)
35(max)
Mounting Torque T
M
- Terminal
Torque 35(min)
46(max)
Kg-cm
Approximate Weight wt - 79 g
Case Style PRM4 Non-Isolated
SANGDEST
MICROELECTRONICS
Technical Data
Green Products
Data Sheet N1226, Rev. C
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn
403CNQ… SERIES
10
100
1000
0.50 0.60 0.70 0.80 0.90
Forward Voltage Drop (V)
Instantaneous Forward Current (A)
TJ=25
-
Typical Instantaneous Forward Voltage Characteristics
SANGDEST
MICROELECTRONICS
Technical Data
Green Products
Data Sheet N1226, Rev. C
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn
403CNQ… SERIES
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve
product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
sales department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC - Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..