Rev 3: Nov 2004 AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Product ) is offered in a lead-free package. VDS (V) = 30V ID = 3.8 A RDS(ON) < 60m (VGS = 10V) RDS(ON) < 70m (VGS = 4.5V) RDS(ON) < 155m (VGS = 2.5V) TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 12 V 15 1.4 W 0.9 TJ, TSTG C -55 to 150 Symbol t 10s Steady-State Steady-State A 3.1 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 3.8 TA=25C Power Dissipation A Maximum 30 RJA RJL Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W AO3418, AO3418L Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage On state drain current VGS(th) ID(ON) Conditions Min Typ Max ID=250A, VGS=0V VDS=24V, VGS=0V 30 0.001 1 5 A 1.4 100 1.8 nA V 43 64 52 60 85 70 m 101 11.7 155 m 0.81 1 2.5 V A 226 39 270 VGS=0V, VDS=15V, f=1MHz pF pF VGS=0V, VDS=0V, f=1MHz 29 1.4 VGS=4.5V, VDS=15V, ID=3.8A 3 1.4 1 15 VGS=10V, ID=3.8A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=3.5A VGS=2.5V, ID=1A VDS=5V, ID=3.8A Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=10V, VDS=15V, RL=3.9, RGEN=6 IF=3.8A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/s Body Diode Reverse Recovery Time V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V Units A m S 1.7 3.6 0.55 2.6 3.2 14.5 2.1 10.2 4 5 22 3 13 3.8 5 pF nC nC nC ns ns ns ns ns nC A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3418, AO3418L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 3.5V 12 VDS=5V 8 4V 6V 3V 6 ID(A) ID (A) 9 4 6 VGS=2.5V 125C 3 2 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 200 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 3.5 270 1.8 VGS=4.5V Normalized On-Resistance 175 ID=3.5A 1.6 150 RDS(ON) (m) 25C VGS=2.5V 125 1.7 1.4 100 75 1.2 VGS=4.5V 50 VGS=10V 25 3.6 0 VGS=2.5V ID=1A 1 0.8 0 2 4 6 8 10 VGS=10V ID=3.8A 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 13 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 100 1.0E+01 ID=3.8A 90 1.0E+00 125C 1.0E-01 70 125C IS (A) RDS(ON) (m) 80 1.0E-02 60 25C 25C 50 1.0E-03 40 1.0E-04 30 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3418, AO3418L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 VDS=15V ID=3.8A 350 Capacitance (pF) VGS (Volts) 4 3 2 300 Ciss 250 200 150 Coss Crss 100 1 50 0 0 0 1 2 3 4 5 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 270 TJ(Max)=150C TA=25C 100.0 5 20 TJ(Max)=150C TA=25C 1.7 RDS(ON) limited 100s Power (W) ID (Amps) 10.0 15 10s 1ms 0.1s 10ms 1.0 1s 3.6 10 5 10s DC 0.1 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W 100 0 0.001 13 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000