934056688116 - NXP - Datasheet.Live

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ100B

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 (TO92) envelope intended

for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V

VCBO Collector-Base voltage (open emitter) - 700 V

VCEO Collector-emitter voltage (open base) - 350 V

ICCollector current (DC) - 1.0 A

ICM Collector current peak value - 2.0 A

Ptot Total power dissipation Tlead ≤ 25 ˚C - 2.0 W

VCEsat Collector-emitter saturation voltage IC = 1.0 A;IB = 0.2 A 0.27 1.0 V

hFE IC = 1.0 A; VCE = 5 V 12 19

tfi Fall time (Inductive) IC = 1.0 A; IB1= 0.2 A 56 76 ns

PINNING - SOT54 (TO92) PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 Base

2 Collector

3 Emitter

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCESM Collector to emitter voltage VBE = 0 V - 700 V

VCEO Collector to emitter voltage (open base) - 350 V

VCBO Collector to base voltage (open emitter) - 700 V

ICCollector current (DC) - 1.0 A

ICM Collector current peak value - 2.0 A

IBBase current (DC) - 0.5 A

IBM Base current peak value - 1.0 A

Ptot Total power dissipation Tmb ≤ 25 ˚C - 2.0 W

Tstg Storage temperature -65 150 ˚C

TjJunction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Rth j-lead Thermal resistance junction to lead - 60 K/W

Rth j-a Thermal resistance junction to ambient pcb mounted; lead 150 - K/W

length = 4 mm

321

May 2001 1 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ100B

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICES,ICBO Collector cut-off current 1VBE = 0 V; VCE = VCESMmax - 0.8 100 µA

ICES VBE = 0 V; VCE = VCESMmax; - 2.0 500 µA

Tj = 125 ˚C

ICEO Collector cut-off current 1VCEO = VCEOMmax (350V) - - 100 µA

IEBO Emitter cut-off current VEB = 9 V; IC = 0 A - 0.05 100 µA

VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; 350 - - V

L = 25 mH

VCEsat Collector-emitter saturation voltage IC = 1 A; IB = 0.2 A - 0.27 1.0 V

VBEsat Base-emitter saturation voltage IC = 1 A; IB = 0.2 A - 1.03 1.3 V

hFE DC current gain IC = 1mA; VCE = 5 V 17 23 -

hFE IC = 100mA; VCE = 5 V 19 30 46

hFE IC = 1.0 A; VCE = 5 V 9 12 19

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Switching times (resistive load) ICon = 1.0 A; IBon = -IBoff = 0.2 A;

RL = 75 ohms; VBB2 = 4V;

ton Turn-on time 1.0 1.28 µs

tsTurn-off storage time 1.95 2.61 µs

tfTurn-off fall time 0.22 0.30 µs

Switching times (inductive load) ICon = 1.0 A; IBon = 0.2 A; LB = 1 µH;

-VBB = 5 V

tsi Turn-off storage time 0.55 0.74 µs

tfi Turn-off fall time 56 76 ns

Switching times (inductive load) ICon = 1.0 A; IBon = 0.2 A; LB = 1 µH;

-VBB = 5 V; Tj = 100 ˚C

tsi Turn-off storage time - 1.5 µs

tfi Turn-off fall time - 140 ns

1 Measured with half sine-wave voltage (curve tracer).

May 2001 2 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ100B

Fig.1. Test circuit for VCEOsust.

Fig.2. Oscilloscope display for VCEOsust.

Fig.3. Normalised power dissipation.

PD% = 100⋅PD/PD 25˚C = f (Tmb)

Fig.4. Transient thermal impedance.

Zth j-lead = f(t); parameter D = tp/T

Fig.5. Typical DC current gain. hFE = f(IC)

parameter VCE

Fig.6. Typical DC current gain. hFE = f(IC)

parameter VCE

+ 50v

100-200R

Horizontal

Vertical

Oscilloscope

30-60 Hz

300R

1u 100u 10m 1 100

t / s

Zth / (K/W)

100

0.1

0.01

D=0

0.5

0.2

0.1

0.05

0.02

10u 1m 100m 10

D =

VCE / V min

VCEOsust

IC / mA

100

250

0.01 0.05 0.1 0.5 1 2 3

IC/A

HFE

125 C

-40 C

25 C

VCE = 1V

0 20 40 60 80 100 120 140

Tmb / C

PD% Normalised Power Derating

120

110

100

0.01 0.05 0.1 0.5 1 2 3

IC/A

HFE

125 C 25 C

-40 C

VCE = 5V

May 2001 3 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ100B

Fig.7. Collector-Emitter saturation voltage. Fig.8. Base-Emitter saturation voltage.

Solid Lines = typ values, IC/IB = 3 Solid Lines = typ values, IC/IB = 3

INDUCTIVE SWITCHING

Fig.9. Test circuit inductive load. Fig.10. Switching times waveforms with inductive load.

VCC = 300 V; -VBE = 5 V, LC = 200 µH; LB = 1 µH

Fig.11. Inductive switching. Fig.12. Inductive switching.

tfi = f(hFE) tfi = f(IC)

0.01 0.02 0.05 0.1 0.2 0.5 1 2

0.2

0.4

0.6

0.8

1.2

IC/A

VCEsat/V

0.01 0.02 0.05 0.1 0.2 0.5 1 2

0.6

0.7

0.8

0.9

1.1

1.2

1.3

IC/A

VBEsat/V

IBon

-VBB

T.U.T.

VCC

ICon

IBon

-IBoff

ts tf

toff

10 %

90 %

234567891011

100

150

200

HFE GAIN (IC/IB)

tfi /ns

IC = 1.5A

IC = 1A

IC = 0.5A

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2

100

150

200

250

IC/A

tfi /ns

IC/IB = 10

IC/IB = 5

May 2001 4 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ100B

Fig.13. Inductive switching. Fig.14. Inductive switching.

tsi = f(hFE) tsi = f(IC)

RESISTIVE SWITCHING

Fig.15. Test circuit resistive load. VIM = -6 to +8 V Fig.16. Switching times waveforms with resistive load.

VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.

RB and RL calculated from ICon and IBon requirements.

Fig.17. Resistive switching. Fig.18. Resistive switching.

ton = f(IC) ts = f(IC)

234567891011

0.2

0.4

0.6

0.8

HFE GAIN (IC/IB)

tsi /us

IC = 1.5A

IC = 1A

IC = 0.5A

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2

0.2

0.4

0.6

0.8

IC/A

tsi /us

IC/IB = 3

IC/IB = 5

IC/IB = 10

VCC

RT.U.T.

VIM B

10 %

90 %

ton toff

ts tf

IBon

-IBoff

ICon

tr 30ns

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2

0.5

1.5

IC/A

ton /us

IC/IB = 10

IC/IB = 5

IC/IB = 3

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2

0.5

1.5

2.5

IC/A

ts us

IC/IB = 3

IC/IB = 5

IC/IB = 10

May 2001 5 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ100B

Fig.19. Resistive switching.

tf = f(IC)

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2

100

200

500

1,000

2,000

5,000

IC /A

tf /ns

IC/IB = 3

IC/IB = 5

IC/IB = 10

Fig.20. Test Circuit for the RBSOA test.

Vcl ≤ 700V; Vcc = 150V; LB = 1µH; Lc = 200µHFig.21. Reverse bias safe operating area Tj ≤ Tjmax

for -VBE = 9V, 5V,3V & 1V

IBon

-VBB

T.U.T.

VCC

PROBE POINT

VCL(RBSOAR)

0 100 200 300 400 500 600 700 800

0.25

0.5

0.75

1.25

1.5

1.75

2.25

2.5

VCEclamp/V

IC/A

-9V

-5V

-3V

-1V

May 2001 6 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ100B

MECHANICAL DATA

Fig.22. TO92 ; plastic envelope; Net Mass: 0.2 g

Notes

1. Epoxy meets UL94 V0 at 1/8".

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 5.2

5.0

0.48

0.40

0.45

0.40

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

(1)

2.5

0.66

0.56

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43 97-02-28

A L

0 2.5 5 mm

scale

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e1e

May 2001 7 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ100B

DEFINITIONS

DATA SHEET STATUS

DATA SHEET PRODUCT DEFINITIONS

STATUS2STATUS3

Objective data Development This data sheet contains data from the objective specification for

product development. Philips Semiconductors reserves the right to

change the specification in any manner without notice

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the specification without

notice, in ordere to improve the design and supply the best possible

product

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in

order to improve the design, manufacturing and supply. Changes will

be communicated according to the Customer Product/Process

Change Notification (CPCN) procedure SNW-SQ-650A

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2001

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design.

3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is

available on the Internet at URL http://www.semiconductors.philips.com.

May 2001 8 Rev 1.000