UTMC APPLICATION NOTE ___________________________________________________________________________ UT63M14X 5 Volt Only Transceiver Total Dose Test Report Summary Twelve parts were tested during December 1995. Eight of the parts were nominally processed; four of the parts had process parameters pushed toward their process extremes. All twelve parts passed at 25C after exposure to total dose of 10E6 rads(Si). Four of the twelve parts were tested at +125C and -55C and passed. Four separate parts were annealed for 168 hours and passed 25C testing (not tested at 125C or -55C). Test Method Parts were irradiated at approximately 250 rads(Si)/sec in UTMC's Co60 chamber. The first four parts received a split between biased and unbiased conditions, and were irradiated to the following cumulative dose levels: Pre-Rad, 200K, 500K, 1M, 2.5M, 4M, 9M. Based on these test results, UTMC confirmed that the biased irradiation was worst case. The second and third sets of four parts were irradiated under bias. These parts received the following cumulative total dose levels: Pre-rad, 1M, 10M. Bias conditions were as follows: zero volts for RXEN, RXIN, RXIN, TXIN. Five volts for TXIN, TXINB. RXOUT, RXOUT, TXOUT, TXOUT were left floating. Test Results Selected test parameters of interest for two nominally processed parts tested at 25C (many intermediate read points): Table 1: Device #1 Pre-Rad 2E5 Rads(Si) 5E5 Rads(Si) ICC (mA) 15.851 15.857 15.863 VPP, L-L 7.551 7.558 7.557 RXOUT VOL @4.5V 0.392 0.391 RXOUT VOH 3.792 3.797 0.394 3.793 1E6 Rad(si) 2.5E5 Rads(Si) 4E6 Rads(Si) 9E6 Rads(Si) 15.864 15.85 15.847 15.828 7.557 7.544 7.541 7.545 0.395 3.793 @4.5V Page 1 of 4 0.398 3.796 0.407 3.788 0.415 3.79 Table 2: Device #1 Pre-Rad 2E5 Rads(Si) 5E5 Rads(Si) ICC (mA) 16.103 16.095 16.097 VPP, L-L 7.868 7.872 7.871 RXOUT VOL @4.5V 0.395 0.396 RXOUT VOH 3.794 3.794 0.396 3.794 1E6 Rad(si) 2.5E5 Rads(Si) 4E6 Rads(Si) 9E6 Rads(Si) 16.093 16.094 16.09 16.075 7.867 7.835 7.782 7.782 0.399 0.403 0.404 3.794 3.788 3.795 0.397 3.794 @4.5V Selected test parameters of interest for four extreme processed parts tested at 25C: Table 3: Device #1 Pre-Rad 1E6 Rads(Si) 10E6 Rads(Si) ICC (mA) 16.91 16.863 16.863 VPP, L-L 7.96 7.926 7.862 RXOUT VOL @4.5V 0.396 0.403 0.411 RXOUT VOH 3.799 3.788 3.788 @4.5V Page 2 of 4 Table 4: Device #2 Pre-Rad 1E6 Rads(Si) 10E6 Rads(Si) ICC (mA) 16.258 16.214 16.198 VPP, L-L 7.906 7.873 7.807 RXOUT VOL @4.5V 0.39 0.397 0.405 RXOUT VOH 3.801 3.79 3.791 @4.5V Table 5: Device #3 Pre-Rad 1E6 Rads(Si) 10E6 Rads(Si) ICC (mA) 16.182 16.144 16.124 VPP, L-L 7.941 7.911 7.824 RXOUT VOL @4.5V 0.392 0.399 0.407 RXOUT VOH 3.796 3.787 3.788 @4.5V Page 3 of 4 Table 6: Device #4 Pre-Rad 1E6 Rads(Si) 10E6 Rads(Si) ICC (mA) 15.678 15.639 15.635 VPP, L-L 7.893 7.864 7.788 RXOUT VOL @4.5V 0.391 0.398 0.405 RXOUT VOH 3.798 3.788 3.789 @4.5V Page 4 of 4