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UTMC APPLICATION NOTE
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UT63M14X 5 Volt Only Transceiver Total Dose Test Report
Summary
Twelve parts were tested during December 1995. Eight of the parts were nominally processed;
four of the parts had process parameters pushed toward their process extremes. All twelve parts
passed at 25°C after exposure to total dose of 10E6 rads(Si). Four of the twelve parts were tested
at +125°C and -55°C and passed. Four separate parts were annealed for 168 hours and passed
25°C testing (not tested at 125°C or -55°C).
Test Method
Parts were irradiated at approximately 250 rads(Si)/sec in UTMC's Co60 chamber. The first four
parts received a split between biased and unbiased conditions, and were irradiated to the follow-
ing cumulative dose levels: Pre-Rad, 200K, 500K, 1M, 2.5M, 4M, 9M. Based on these test
results, UTMC confirmed that the biased irradiation was worst case.
The second and third sets of four parts were irradiated under bias. These parts received the follow-
ing cumulative total dose levels: Pre-rad, 1M, 10M. Bias conditions were as follows: zero volts
for RXEN, RXIN, RXIN, TXIN. Five volts for TXIN, TXINB. RXOUT, RXOUT, TXOUT,
TXOUT were left floating.
Test Results
Selected test parameters of interest for two nominally processed parts tested
at 25°C (many intermediate read points):
Table 1: Device #1
Pre-Rad 2E5
Rads(Si) 5E5
Rads(Si) 1E6
Rad(si) 2.5E5
Rads(Si) 4E6
Rads(Si) 9E6
Rads(Si)
ICC (mA) 15.851 15.857 15.863 15.864 15.85 15.847 15.828
VPP, L-L 7.551 7.558 7.557 7.557 7.544 7.541 7.545
RXOUT
VOL
@4.5V
0.392 0.391 0.394 0.395 0.398 0.407 0.415
RXOUT
VOH
@4.5V
3.792 3.797 3.793 3.793 3.796 3.788 3.79
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Selected test parameters of interest for four extreme processed parts tested
at 25°C:
Table 2: Device #1
Pre-Rad 2E5
Rads(Si) 5E5
Rads(Si) 1E6
Rad(si) 2.5E5
Rads(Si) 4E6
Rads(Si) 9E6
Rads(Si)
ICC (mA) 16.103 16.095 16.097 16.093 16.094 16.09 16.075
VPP, L-L 7.868 7.872 7.871 7.867 7.835 7.782 7.782
RXOUT
VOL
@4.5V
0.395 0.396 0.396 0.397 0.399 0.403 0.404
RXOUT
VOH
@4.5V
3.794 3.794 3.794 3.794 3.794 3.788 3.795
Table 3: Device #1
Pre-Rad 1E6
Rads(Si) 10E6
Rads(Si)
ICC (mA) 16.91 16.863 16.863
VPP, L-L 7.96 7.926 7.862
RXOUT
VOL
@4.5V
0.396 0.403 0.411
RXOUT
VOH
@4.5V
3.799 3.788 3.788
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Table 4: Device #2
Pre-Rad 1E6
Rads(Si) 10E6
Rads(Si)
ICC (mA) 16.258 16.214 16.198
VPP, L-L 7.906 7.873 7.807
RXOUT
VOL
@4.5V
0.39 0.397 0.405
RXOUT
VOH
@4.5V
3.801 3.79 3.791
Table 5: Device #3
Pre-Rad 1E6
Rads(Si) 10E6
Rads(Si)
ICC (mA) 16.182 16.144 16.124
VPP, L-L 7.941 7.911 7.824
RXOUT
VOL
@4.5V
0.392 0.399 0.407
RXOUT
VOH
@4.5V
3.796 3.787 3.788
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Table 6: Device #4
Pre-Rad 1E6
Rads(Si) 10E6
Rads(Si)
ICC (mA) 15.678 15.639 15.635
VPP, L-L 7.893 7.864 7.788
RXOUT
VOL
@4.5V
0.391 0.398 0.405
RXOUT
VOH
@4.5V
3.798 3.788 3.789
