6
650VCoolMOS™C7PowerTransistor
IPP65R095C7
Rev.2.0,2013-10-11Final Data Sheet
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.59mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.084
0.202
0.095
-ΩVGS=10V,ID=11.8A,Tj=25°C
VGS=10V,ID=11.8A,Tj=150°C
Gate resistance RG- 0.9 - Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 2140 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 33 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related 1) Co(er) - 69 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time related
2)
Co(tr) - 763 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 14 - ns VDD=400V,VGS=13V,ID=11.8A,
RG=5.3Ω;seetable9
Rise time tr- 12 - ns VDD=400V,VGS=13V,ID=11.8A,
RG=5.3Ω;seetable9
Turn-off delay time td(off) - 60 - ns VDD=400V,VGS=13V,ID=11.8A,
RG=5.3Ω;seetable9
Fall time tf- 7 - ns VDD=400V,VGS=13V,ID=11.8A,
RG=5.3Ω;seetable9
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 12 - nC VDD=400V,ID=11.8A,VGS=0to10V
Gate to drain charge Qgd - 15 - nC VDD=400V,ID=11.8A,VGS=0to10V
Gate charge total Qg- 45 - nC VDD=400V,ID=11.8A,VGS=0to10V
Gate plateau voltage Vplateau - 5.4 - V VDD=400V,ID=11.8A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V