STB13N80K5, STF13N80K5, STP13N80K5 N-channel 800 V, 0.37 , 12 A Zener-protected SuperMESHTM 5 Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes 3 3 1 1 D2PAK 2 TO-220FP TAB VDSS RDS(on) ID PTOT STB13N80K5 800 V < 0.45 12 A 190 W STF13N80K5 800 V < 0.45 12 A 35 W STP13N80K5 800 V < 0.45 12 A 190 W * Worldwide best FOM (figure of merit) * Ultra low gate charge 3 1 * 100% avalanche tested 2 TO-220 * Zener-protected Figure 1. Internal schematic diagram Applications * Switching applications D(2, TAB) Description G(1) S(3) AM01476v1 These devices are N-channel Zener-protected Power MOSFETs realized in SuperMESHTM 5, a revolutionary avalanche-rugged very high voltage Power MOSFET technology based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. Table 1. Device summary Order codes Marking Packages Packaging STB13N80K5 13N80K5 DPAK Tape and reel STF13N80K5 13N80K5 TO-220FP Tube STP13N80K5 13N80K5 TO-220 Tube April 2013 This is information on a product in full production. DocID024348 Rev 3 1/20 www.st.com 20 Contents STB13N80K5, STF13N80K5, STP13N80K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2/20 .............................................. 9 DocID024348 Rev 3 STB13N80K5, STF13N80K5, STP13N80K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220 VGS Gate-source voltage TO-220FP 30 V (1) ID Drain current (continuous) at TC = 25 C 12 12 ID Drain current (continuous) at TC = 100 C 7.6 7.6 (1) A Drain current (pulsed) 48 (1) A Total dissipation at TC = 25 C 190 IDM (2) PTOT IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax ) EAS Single pulse avalanche energy (starting TJ = 25 C, ID=IAS, VDD= 50 V) Viso Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) dv/dt (3) (4) dv/dt Tj Tstg 48 35 A W 4 A 148 mJ 2500 V Peak diode recovery voltage slope 4.5 V/ns MOSFET dv/dt ruggedness 50 V/ns -55 to 150 C Operating junction temperature Storage temperature 1. Limited by package. 2. Pulse width limited by safe operating area. 3. ISD 12 A, di/dt 100 A/s, VPeak V(BR)DSS 4. VDS 640 V Table 3. Thermal data Value Symbol Parameter Unit DPAK Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb (1) Thermal resistance junction-pcb max TO-220 TO-220FP 0.66 3.57 62.5 C/W 30 1. When mounted on 1inch FR-4 board, 2 oz Cu. DocID024348 Rev 3 3/20 Electrical characteristics 2 STB13N80K5, STF13N80K5, STP13N80K5 Electrical characteristics (TCASE = 25 C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage (VGS= 0) ID = 1 mA IDSS Zero gate voltage drain current (VGS = 0) VDS = 800 V VDS = 800 V, Tc=125 C 1 50 A A IGSS Gate body leakage current (VDS = 0) VGS = 20 V 10 A VGS(th) Gate threshold voltage VDS = VGS, ID = 100 A 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID= 6 A 0.37 0.45 Min. Typ. Max. Unit - 870 - pF - 50 - pF V(BR)DSS 800 3 V Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 2 - pF Co(tr)(1) Equivalent capacitance time related - 110 - pF Co(er)(2) Equivalent capacitance energy related - 43 - pF RG Intrinsic gate resistance f = 1MHz, ID=0 - 5 - Qg Total gate charge - 29 - nC Qgs Gate-source charge - 7 nC Qgd Gate-drain charge VDD = 640 V, ID = 12 A VGS =10 V (see Figure 20) - 18 nC VDS =100 V, f=1 MHz, VGS=0 VGS = 0, VDS = 0 to 640 V 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/20 DocID024348 Rev 3 STB13N80K5, STF13N80K5, STP13N80K5 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time VDD = 400 V, ID = 6A, RG=4.7 , VGS=10 V (see Figure 22) Rise time td(off) tf Turn-off delay time Fall time Min. Typ. Max. Unit - 16 - ns - 16 - ns - 42 - ns - 16 - ns Min. Typ. Max. Unit Table 7. Source drain diode Symbol ISD ISDM VSD 1. (1) Parameter Test conditions Source-drain current - 14 A Source-drain current (pulsed) - 56 A 1.5 V Forward on voltage ISD= 12 A, VGS=0 - trr Reverse recovery time - 406 ns Qrr Reverse recovery charge - 5.7 C IRRM Reverse recovery current ISD= 12 A, VDD= 60 V di/dt = 100 A/s, (see Figure 21) - 28 A - 600 ns - 7.9 C - 26 A Min. Typ. Max Unit 30 - - V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD= 12 A,VDD= 60 V di/dt=100 A/s, Tj=150 C (see Figure 21) Pulsed: pulse duration = 300s, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS= 1mA, ID= 0 The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device's ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID024348 Rev 3 5/20 Electrical characteristics 2.1 STB13N80K5, STF13N80K5, STP13N80K5 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK Figure 3. Thermal impedance for D2PAK AM15687v1 ID (A) 10s 100s (on ) DS Op Lim erat ite ion d b in y m this ax are a R is 10 1 1ms 10ms Tj=150C Tc=25C Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP AM15688v1 ID (A) 10 ) Op Lim era ite tion d by in t m his ax ar RD ea S( is on 10s 1 100s 1ms 10ms 0.1 Tj=150C Tc=25C Single pulse 0.01 0.1 10 1 100 VDS(V) Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220 AM15689v1 ID (A) 10 ) (on 1ms DS Op Lim erat ite ion d b in y m this ax are a R is 10s 100s 1 10ms Tj=150C Tc=25C Single pulse 0.1 0.1 6/20 1 10 100 VDS(V) DocID024348 Rev 3 STB13N80K5, STF13N80K5, STP13N80K5 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM15690v1 ID (A) VGS=11V 10V 30 AM15691v1 ID (A) VDS=20V 30 9V 25 25 20 20 8V 15 15 10 10 7V 5 5 6V 0 0 10 5 20 15 0 VDS(V) Figure 10. Normalized BVDSS vs temperature AM15699v1 BVDSS (norm) ID=1mA 1.1 4 5 6 9 8 7 10 VGS(V) Figure 11. Static drain-source on-resistance AM15693v1 RDS(on) () VGS=10V 0.8 0.7 1.05 0.6 0.5 1 0.4 0.95 0.3 0.2 0.9 0.1 0.85 -100 0 -50 50 100 150 Figure 12. Gate charge vs gate-source voltage AM15692v1 VGS (V) 700 VDS VGS 12 0 2 TJ(C) 4 6 8 10 ID(A) 12 Figure 13. Capacitance variations AM15694v1 C (pF) 600 10 500 8 400 6 300 4 200 2 100 1000 Ciss 100 Coss 0 0 5 10 15 20 25 10 0 30 Qg(nC) DocID024348 Rev 3 Crss 1 0.1 1 10 100 VDS(V) 7/20 Electrical characteristics STB13N80K5, STF13N80K5, STP13N80K5 Figure 14. Normalized gate threshold voltage vs temperature AM15696v1 VGS(th) (norm) Figure 15. Normalized on-resistance vs temperature AM15697v1 RDS(on) (norm) ID=100A 1.2 ID=6A VGS=10V 2.5 1 2 0.8 1.5 0.6 1 0.4 0.5 0.2 0 -100 0 -50 50 100 150 0 -100 TJ(C) Figure 16. Source-drain diode forward characteristics AM15698v1 VSD (V) -50 0 50 100 150 TJ(C) Figure 17. Output capacitance stored energy Eoss (J) 1 AM15695v1 12 TJ=-50C 10 0.9 8 0.8 TJ=25C 6 0.7 4 TJ=150C 0.6 2 0.5 0 2 6 4 8 ISD(A) 10 Figure 18. Maximum avalanche energy vs. starting Tj AM15700v1 EAS (mJ) 140 120 100 80 60 40 20 0 0 8/20 20 40 60 80 100 120 140 TJ(C) DocID024348 Rev 3 0 0 100 200 300 400 500 600 700 800 VDS(V) STB13N80K5, STF13N80K5, STP13N80K5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 Figure 21. Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B AM01469v1 Figure 22. Unclamped inductive load test circuit L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID024348 Rev 3 10% AM01473v1 9/20 Package mechanical data 4 STB13N80K5, STF13N80K5, STP13N80K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 10/20 DocID024348 Rev 3 STB13N80K5, STF13N80K5, STP13N80K5 Package mechanical data Table 9. DPAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0 8 DocID024348 Rev 3 11/20 Package mechanical data STB13N80K5, STF13N80K5, STP13N80K5 Figure 25. DPAK (TO-263) drawing 0079457_T Figure 26. DPAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimension are in millimeters 12/20 DocID024348 Rev 3 Footprint STB13N80K5, STF13N80K5, STP13N80K5 Package mechanical data Table 10. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024348 Rev 3 13/20 Package mechanical data STB13N80K5, STF13N80K5, STP13N80K5 Figure 27. TO-220FP drawing 7012510_Rev_K_B 14/20 DocID024348 Rev 3 STB13N80K5, STF13N80K5, STP13N80K5 Table 11. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 P 3.75 3.85 Q 2.65 2.95 DocID024348 Rev 3 15/20 Package mechanical data STB13N80K5, STF13N80K5, STP13N80K5 Figure 28. TO-220 type A drawing 0015988_typeA_Rev_S 16/20 DocID024348 Rev 3 STB13N80K5, STF13N80K5, STP13N80K5 5 Packaging mechanical data Packaging mechanical data Table 12. DPAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID024348 Rev 3 Min. Max. 330 13.2 26.4 30.4 17/20 Packaging mechanical data STB13N80K5, STF13N80K5, STP13N80K5 Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 18/20 DocID024348 Rev 3 STB13N80K5, STF13N80K5, STP13N80K5 6 Revision history Revision history Table 13. Document revision history Date Revision Changes 07-Mar-2013 1 Initial release. 27-Mar-2013 2 Updated Figure 1: Internal schematic diagram. Minor text changes. Document status promoted from preliminary data to production data. 15-Apr-2013 3 - Modified: EAS value, the entire typical values on Table 5, 6 and 7 - Inserted: Section 2.1: Electrical characteristics (curves) - Minor text changes DocID024348 Rev 3 19/20 STB13N80K5, STF13N80K5, STP13N80K5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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