This is information on a product in full production.
April 2013 DocID024348 Rev 3 1/20
20
STB13N80K5, STF13N80K5,
STP13N80K5
N-channel 800 V, 0.37 Ω, 12 A Zener-protected SuperMESH™ 5
Power MOSFET in D²PAK, TO-220FP and TO-220 packages
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Worldwide best FOM (figure of merit)
•Ultra low gate charge
•100% avalanche tested
•Zener-protected
Applications
•Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFETs realized in SuperMESH™ 5, a
revolutionary avalanche-rugged very high voltage
Power MOSFET technology based on an
innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
TO-220
123
TAB
123
TO-220FP
1
3
TAB
D
2
PAK
D(2, TAB)
G(1)
S(3)
AM01476v1
Order codes V
DSS
R
DS(on)
I
D
P
TOT
STB13N80K5 800 V < 0.45 Ω12 A 190 W
STF13N80K5 800 V < 0.45 Ω12 A 35 W
STP13N80K5 800 V < 0.45 Ω12 A 190 W
Table 1. Device summary
Order codes Marking Packages Packaging
STB13N80K5 13N80K5 D²PAK Tape and reel
STF13N80K5 13N80K5 TO-220FP Tube
STP13N80K5 13N80K5 TO-220 Tube
www.st.com
Contents STB13N80K5, STF13N80K5, STP13N80K5
2/20 DocID024348 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
DocID024348 Rev 3 3/20
STB13N80K5, STF13N80K5, STP13N80K5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
D²PAK, TO-220 TO-220FP
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25 °C 12 12
(1)
1. Limited by package.
A
I
D
Drain current (continuous) at T
C
= 100 °C 7.6 7.6
(1)
A
I
DM (2)
2. Pulse width limited by safe operating area.
Dra in current (pulsed) 48 48
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C 190 35 W
I
AR
Max current during repetitive or single
pulse avalanche
(pulse width limited by T
jmax
) 4A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V) 148 mJ
V
iso
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;T
C
=25 °C) 2500 V
dv/dt
(3)
3. I
SD
≤ 12 A, di/dt ≤ 100 A/µs, V
Peak
≤ V
(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
dv/dt(4)
4. V
DS
≤ 640 V
MOSFET dv/dt ruggedness 50 V/ns
T
j
T
stg
Operating junction temperature
Storage temperature -55 to 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
D²PAK TO-220 TO-220FP
Rthj-case Thermal resistance junction-case max 0.66 3.57
°C/WRthj-amb Thermal resistance junction-amb max 62.5
Rthj-pcb
(1)
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Thermal resistance junction-pcb max 30
Electrical characteristics STB13N80K5, STF13N80K5, STP13N80K5
4/20 DocID024348 Rev 3
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
Table 4. On/off states
Symbol Parameter Test condition s M in. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
volt a ge (V
GS
= 0) I
D
= 1 mA 800 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0) V
DS
= 800 V
V
DS
= 800 V, Tc=125 °C 1
50 µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0) V
GS
= ± 20 V ±10 µA
V
GS(th)
Gate thresh old voltage V
DS
= V
GS
, I
D
= 100 µA 3 4 5 V
R
DS(on)
Static drain-source on-
resistance V
GS
= 10 V, I
D
= 6 A 0.37 0.45 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
=100 V, f=1 MHz, V
GS
=0
-870- pF
C
oss
Output capacitance - 50 - pF
C
rss
Reverse transfer
capacitance -2-pF
C
o(tr)(1)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when
V
DS
increases from 0 to 80% V
DSS
Equi valent c ap acita nce ti me
related VGS = 0, VDS = 0 to 640 V -110- pF
Co(er)(2)
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance
energy re lated -43-pF
RGIntr insic gate resistance f = 1MHz, ID=0 - 5 - Ω
QgTot al gate charge VDD = 640 V, ID = 12 A
VGS = 10 V
(see Figure 20)
-29-nC
Qgs Gate-s ourc e cha rge - 7 nC
Qgd Gate-drain charge - 18 nC
DocID024348 Rev 3 5/20
STB13N80 K5, STF 13N 80K5 , STP13 N80K5 Elect ri cal chara ct er istics
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve ef ficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time V
DD
= 400 V, I
D
= 6A,
R
G
=4.7 Ω, V
GS
=10 V
(see Figure 22)
-16-ns
t
r
Rise time - 16 - ns
t
d(off)
Turn-off delay time - 42 - n s
t
f
Fall time - 1 6 - ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 14 A
I
SDM
Source-drain current (pulsed) - 56 A
V
SD(1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage I
SD
= 12 A, V
GS
=0 - 1.5 V
t
rr
Reverse recovery time I
SD
= 12 A, V
DD
= 60 V
di/dt = 100 A/µs,
(see Figure 21)
- 406 ns
Q
rr
Reverse recovery charge - 5.7 µC
I
RRM
Reverse recovery current - 28 A
t
rr
Reverse recovery time I
SD
= 12 A,V
DD
= 60 V
di/dt=100 A/µs,
Tj=150 °C
(see Figure 21)
- 600 ns
Q
rr
Reverse recovery charge - 7.9 µC
I
RRM
Reverse recovery current - 26 A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max Unit
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ± 1mA, I
D
= 0 30 - - V
Electrical characteristics STB13N80K5, STF13N80K5, STP13N80K5
6/20 DocID024348 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe ope rating area for D
2
PAK Figure 3. Thermal impedance for D
2
PAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
AM15687v1
I
D
1
0.1
0.01
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
10
AM15688v1
Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
AM15689v1
DocID024348 Rev 3 7/20
STB13N80 K5, STF 13N 80K5 , STP13 N80K5 Elect ri cal chara ct er istics
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Normalized B
VDSS
vs temperature Figure 11. Static drain-source on-resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
I
D
15
10
5
0
010 V
DS
(V)
20
(A)
515
20
25
6V
7V
8V
V
GS
=11V
9V
30 10V
AM15690v1
I
D
15
10
5
0
46V
GS
(V)
8
(A)
57
20
25
30
V
DS
=20V
910
AM15691v1
BV
DSS
-100 T
J
(°C)
(norm)
-50 50
0100
0.85
0.9
0.95
1
1.05
I
D
=1mA
150
1.1
AM15699v1
R
DS(on)
0.3
0.2
0.1
0
26I
D
(A)
(Ω)
48
0.4
0.5
0.6
V
GS
=10V
10 12
0.7
0.8
AM15693v1
V
GS
6
4
2
0
05Q
g
(nC)
(V)
20
8
10 15
10
25
12 600
400
200
0
700
V
DS
V
GS
300
500
100
30
AM15692v1
C
100
10
1
0.1 10 V
DS
(V)
(pF)
1100
Ciss
Coss
Crss
1000
AM15694v1
Electrical characteristics STB13N80K5, STF13N80K5, STP13N80K5
8/20 DocID024348 Rev 3
Figure 14. Normalized gate threshold voltage vs
temperature Figure 15. Normalized on-resistance vs
temperature
Figure 16. Source -drain diode forward
characteristics Figure 17. Output capacitance stored energy
V
GS(th)
0.6
0.4
0.2
0
-100 T
J
(°C)
(norm)
-50
0.8
50
0100
I
D
=100µA
150
1
1.2
AM15696v1
R
DS(on)
2
1.5
1
0.5
-100 T
J
(°C)
(norm)
-50 50
0100
2.5
0
V
GS
=10V
I
D
=6A
150
AM15697v1
V
SD
04I
SD
(A)
(V)
268
0.5
0.6
0.7
0.8
0.9
1
T
J
=-50°C
T
J
=150°C
T
J
=25°C
10
AM15698v1
E
oss
6
4
2
0
0100 V
DS
(V)
(µJ)
400
8
200 300
10
12
500 600 700 800
AM15695v1
Figure 18. Maximum avalanche energy vs.
starting T
j
E
AS
040 T
J
(°C)
(mJ)
20 100
60 80
0
20
40
60
80
120 140
100
120
140
AM15700v1
DocID024348 Rev 3 9/20
STB13N80K5, STF13N80K5, STP13N80K5 Test circuits
3 Test circuits
Figure 19. Switching times test circuit for
resistive load Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load
switching and diode recovery times Figure 22. Unclamped inductive load tes t circuit
Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.3 1000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STB13N80K5, STF13N80K5, STP13N80K5
10/20 DocID024348 Rev 3
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
DocID024348 Rev 3 11/20
STB13N80K5, STF13N80K5, STP13N80K5 Package mechanical data
Table 9. D²PAK (TO-263) mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
A1 0.03 0.23
b0.70 0.93
b2 1.14 1.70
c0.45 0.60
c2 1.23 1.36
D8.95 9.35
D1 7.50
E 10 10.40
E1 8.50
e2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2 0° 8°
Package mechanical data STB13N80K5, STF13N80K5, STP13N80K5
12/20 DocID024348 Rev 3
Figure 25. D²PAK (TO-263) drawing
Figure 26. D²PAK footprint
(a)
a. All dimension are in millimeters
DocID024348 Rev 3 13/20
STB13N80K5, STF13N80K5, STP13N80K5 Package mechanical data
Table 10. TO-220FP mechanical data
Dim. mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D2.5 2.75
E 0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
Package mechanical data STB13N80K5, STF13N80K5, STP13N80K5
14/20 DocID024348 Rev 3
Figure 27. TO-220FP drawing
DocID024348 Rev 3 15/20
STB13N80K5, STF13N80K5, STP13N80K5 Package mechanical data
Table 11. TO-220 type A mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅
P3.75 3.85
Q2.65 2.95
Package mechanical data STB13N80K5, STF13N80K5, STP13N80K5
16/20 DocID024348 Rev 3
Figure 28. TO-220 type A drawing
DocID024348 Rev 3 17/20
STB13N80K5, STF13N80K5, STP13N80K5 Packaging mechanical data
5 Packaging mechanical data
Table 12. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim. mm Dim. mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
Packaging mechanical data STB13N80K5, STF13N80K5, STP13N80K5
18/20 DocID024348 Rev 3
Figure 29. Tape
Figure 30. Reel
DocID024348 Rev 3 19/20
STB13N80K5, STF13N80K5, STP13N80K5 Revision history
6 Revision history
Table 13. Document revision history
Date Revision Changes
07-Mar-2013 1Initial release.
27-Mar-2013 2 Updated Figure 1: Internal schematic diagram.
Minor text changes.
Document status promoted from preliminary data to production data.
15-Apr-2013 3 – Modified: E
AS
value, the entire typ ic al val ue s on Table 5, 6 and 7
– Inserted: Section 2.1: El ectrical characteristics (curves)
– Minor text changes
STB13N80K5, STF13N80K5, STP13N80K5
20/20 DocID024348 Rev 3
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