1
Rectifier Device Data
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  
. . . employing state–of–the–art epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for high voltage, high frequency
rectification, or as free wheeling and protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Small Compact Surface Mountable Package with J–Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150°C)
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 217 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 260°C
Max. for 10 Seconds
Shipped in 16 mm Tape and Reel, 2500 units per reel
Polarity: Notch in Plastic Body Indicates Cathode Lead
Marking: U3D, U3J
MAXIMUM RATINGS
Ri
Sbl
MURS
Ui
Rating Symbol 320T3 360T3 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200 600 Volts
Average Rectified Forward Current IF(AV) 3.0 @ TL = 140°C
4.0 @ TL = 130°C3.0 @ TL = 130°C
4.0 @ TL = 115°CAmps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM 75 Amps
Operating Junction Temperature TJ
*
65 to +175 °C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Lead RθJL 11 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 3.0 A, TJ = 25°C)
(iF = 4.0 A, TJ = 25°C)
(iF = 3.0 A, TJ = 150°C)
vF0.875
0.89
0.71
1.25
1.28
1.05
Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
iR5.0
15 10
250
µA
Maximum Reverse Recovery T ime
(iF = 1.0 A, di/dt = 50 A/µs)
(iF = 0.5 A, iR = 1.0 A, IREC to 0.25 A)
trr 35
25 75
50
ns
Maximum Forward Recovery T ime
(iF = 1.0 A, di/dt = 100 A/µs, Recovery to 1.0 V) tfr 25 50 ns
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
v
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by MURS320T3/D
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SEMICONDUCTOR TECHNICAL DATA
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
ULTRAFAST RECTIFIERS
3.0 AMPERES
200–600 VOLTS
CASE 403–03
Motorola Preferred Devices
Rev 2
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2Rectifier Device Data
Figure 1. Typical Forward Voltage
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.3 0.60.4 0.8
3.0
0.2
0.1
2.0
0.7
0.7
0.3
0.5
5.0
, INSTANTANEOUS FORW ARD CURRENT (AMPS)
F
0.9
VR, REVERSE VOLTAGE (VOL TS)
06040 100 120
40
80
0.008
0.004
0.002
0.8
0.4
0.2
20
4.0
2.0
8.0
TJ = 175
°
C
IR
20 80 200
Figure 2. Typical Reverse Current*
TC, CASE TEMPERATURE (
°
C)
19090
1.0
2.0
3.0
4.0
5.0
IF(AV)
0
6.0
7.0
8.0
9.0
10
100 110 120 130 140 150 160 170 180
IF(AV), A VERAGE FOR W ARD CURRENT (AMPS)
0 1.51.0
0
2.0
1.0
3.0
5.0
4.0
10
7.0
6.0
P
0.5 5.0
Figure 3. Power Dissipation
Figure 4. Current Derating, Case
010
20
30
40
60
200
10 20 30 40 100
VR, REVERSE VOLTAGE (VOL TS)
Figure 5. Typical Capacitance
0.5
1.0
1.0 1.1 1.2
100
°
C
TJ = 175
°
C
25
°
C160 180
140
0.08
0.04
0.02
, REVERSE CURRENT ( A)
m
TJ = 100
°
C
TJ = 25
°
C
3.02.52.0 4.54.03.5
9.0
8.0
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if VR is sufficiently below
rated VR.
RATED VOLT AGE APPLIED
R
q
JC = 11
°
C/W
TJ = 175
°
C
C, CAPACITANCE (pF)
SQUARE W AVE
dc
, A VERAGE FORWARD CURRENT (AMPS)
TYPICAL CAPACITANCE AT 0 V = 135 pF
dc
SQUARE W AVE
(CAPACITIVE LOAD)IPK
IAV
+
20 10
5.0
i
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
50 60 70 80 90
80
100
0.2
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3
Rectifier Device Data
Figure 6. Typical Forward Voltage
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.5 1.10.7 1.5
3.0
0.05
0.02
2.0
0.7
1.3
0.07
0.5
5.0
, INSTANTANEOUS FORW ARD CURRENT (AMPS)
F
1.7
VR, REVERSE VOLTAGE (VOL TS)
0 300200 400
40
80
0.008
0.004
0.8
0.4
0.2
20
4.0
2.0
8.0
TJ = 175
°
C
IR
100 700
Figure 7. Typical Reverse Current*
TC, CASE TEMPERATURE (
°
C)
90
1.0
2.0
3.0
4.0
5.0
IF(AV)
0
6.0
7.0
8.0
9.0
10
100 110 120 130 140 150 160 170
IF(AV), A VERAGE FOR W ARD CURRENT (AMPS)
0 1.51.0
0
2.0
1.0
3.0
5.0
4.0
10
7.0
6.0
P
0.5 5.0
Figure 8. Power Dissipation
Figure 9. Current Derating, Case
010
20
30
40
60
020 30 40 100
VR, REVERSE VOLTAGE (VOL TS)
Figure 10. Typical Capacitance
0.9
1.0
1.9 2.1 2.3
100
°
C
TJ = 175
°
C
25
°
C
600
500
0.08
0.04
0.02
, REVERSE CURRENT ( A)
m
TJ = 100
°
C
TJ = 25
°
C
3.02.52.0 4.54.03.5
9.0
8.0
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if VR is sufficiently below
rated VR.
C, CAPACITANCE (pF)
SQUARE W AVE
dc
, A VERAGE FORWARD CURRENT (AMPS)
TYPICAL CAPACITANCE AT 0 V = 75 pF
dc
SQUARE W AVE
10 5.0
i
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
50 60 70 80 90
80
100
0.3
0.03
0.1
400
200
10
50
70
90
70 80
0.3
0.2
(CAPACITIVE LOADS)
IPK
IAV
+
20
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4Rectifier Device Data
PACKAGE DIMENSIONS
CASE 403–03
ISSUE B
S
A
DB
J
PK H
C
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.260 0.280 6.60 7.11
B0.220 0.240 5.59 6.10
C0.075 0.095 1.90 2.41
D0.115 0.121 2.92 3.07
H0.0020 0.0060 0.051 0.152
J0.006 0.012 0.15 0.30
K0.030 0.050 0.76 1.27
P0.020 REF 0.51 REF
S0.305 0.320 7.75 8.13
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
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