BZA856AT/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2000 May 01 2000 Sep 25

DISCRETE SEMICONDUCTORS

BZA800A-series

Quadruple ESD transient voltage

suppressor

ook, halfpage

MBD127

2000 Sep 25 2

NXP Semiconductors Product data sheet

Quadruple ESD transient voltage

suppressor BZA800A-series

FEATURES

•ESD rating >8 kV, according to IEC10 00-4-2

•SOT353 (SC-88A) surface mount pack age

•Common anode configuration.

APPLICATIONS

•Computers and pe ripherals

•Audio and video eq uipment

•Communication syste ms.

DESCRIPTION

Monolithic transient voltage suppressor diode in a five lead

SOT353 (SC-88A) package for 4-bit wide ESD transie nt

suppression.

MARKING

PINNING

TYPE NUMBER MARKING CODE

BZA856A Z1

BZA862A Z2

BZA868A Z3

BZA820A Z4

PIN DESCRIPTION

1cathode 1

2common anode

3cathode 2

4cathode 3

5cathode 4

handbook, halfpage

MGT580

Fig.1 Simplified outline SOT353 (SC- 8 8A) .

2000 Sep 25 3

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800A-series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. DC working current limite d by Ptot(max).

THERMAL CHARACTE RISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

IZworking curr ent Tamb = 25 °C−note 1 mA

IFcontinuous forward current Tamb = 25 °C−200 mA

IFSM non-repetitive peak forward cu rr ent tp = 1 ms; square pulse −3.75 A

Ptot total power dissipation Tamb = 25 °C−335 mW

PZSM non repetitive peak reverse power

dissipation: square pulse; tp = 1 ms; see Fig.3

BZA856A, BZA862A, BZA868A, −24 W

BZA820A −17 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient all diodes loaded 370 K/W

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NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800A-series

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VFforward voltage IF = 200 mA − − 1.3 V

IRreverse current

BZA856A VR = 3 V − − 2 000 nA

BZA862A VR = 4 V − − 700 nA

BZA868A VR = 4.3 V − − 200 nA

BZA820A VR = 15 V − − 100 nA

VZworking voltage IZ = 1 mA

BZA856A 5.32 5.6 5.88 V

BZA862A 5.89 6.2 6.51 V

BZA868A 6.46 6.8 7.14 V

BZA820A 19 20 21 V

rdiff differential resistance IZ = 1 mA

BZA856A − − 400 Ω

BZA862A − − 300 Ω

BZA868A − − 200 Ω

BZA820A − − 125 Ω

SZtemperatur e coe fficient IZ = 1 mA

BZA856A − −0.2 −mV/K

BZA862A −1.8 −mV/K

BZA868A −3−mV/K

BZA820A −16 −mV/K

Cddiode capacitance f = 1 MHz; VR = 0

BZA856A − − 240 pF

BZA862A − − 200 pF

BZA868A − − 180 pF

BZA820A − − 50 pF

IZSM non-repetitive peak reverse current tp = 1 ms; Tamb = 25 °C

BZA856A − − 3.2 A

BZA862A − − 2.9 A

BZA868A − − 2.6 A

BZA820A − − 0.6 A

2000 Sep 25 5

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800A-series

handbook, halfpage

MGT583

10−210−1110

tp (ms)

IZSM

(A)

BZA856A

BZA862A

BZA868A

BZA820A

10−1

Fig.2 Maximum non-repetitive pea k re verse

current as a func tion of pulse time.

handbook, halfpage

102

MGT584

BZA856A, BZA862A, BZA868A

BZA820A

10−210−1110

tp (ms)

PZSM

(W)

Fig.3 Maximum non-repetitive pea k re verse

power dissipation as a func tion of pulse

duration (squ are pulse).

PZSM = VZSM × IZSM.

VZSM is the non-repetitive peak reverse voltage at IZSM.

handbook, halfpage

05 15

200

160

MGT585

120

VR (V)

(pF)

BZA856A

BZA862A

BZA868A

BZA820A

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

Tj = 25 °C; f = 1 MHz.

handbook, halfpage

0 50 100 150

400

300

100

200

MGT586

Tamb (

Ptot

(mW)

Fig.5 Power derating curve.

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NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800A-series

handbook, full pagewidth

MGT587

450 Ω

50 Ω

Note 1: attenuator is only used for open

socket high voltage measurements

IEC 1000-4-2 network

CZ = 150 pF; RZ = 330 Ω

1/4 BZA800A

RG 223/U

50 Ω coax

ESD TESTER DIGITIZING

OSCILLOSCOPE

10×

ATTENUATOR

note 1

GND

unclamped +1 kV ESD voltage waveform

(IEC 1000-4-2 network) clamped +1 kV ESD voltage waveform

(IEC 1000-4-2 network)

GND-1

GND-2

GND-3

GND-4

vertical scale = 100 V/div

horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform

(IEC 1000-4-2 network) clamped −1 kV ESD voltage waveform

(IEC 1000-4-2 network)

vertical scale = 100 V/div

horizontal scale = 50 ns/div vertical scale = 10 V/div

horizontal scale = 50 ns/div

vertical scale = 10 V/div

horizontal scale = 50 ns/div

BZA856A

BZA862A

BZA868A

BZA820A

Fig.6 ESD clamping test set-up an d waveforms.

2000 Sep 25 7

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800A-series

APPLICATION INFORMATION

Typical common anode application

A quadruple transient suppressor in a SOT353 package makes it possible to protect four separate lines using only one

package. Two simplified ex amples are shown in Figs 7 and 8.

handbook, full pagewidth

GND

keyboard,

terminal,

printer,

etc. I/O

BZA800A

FUNCTIONAL

DECODER

MGT581

Fig.7 Computer interface protec tion.

handbook, full pagewidth

MGT582

I/O

ROM

RAM

CPU

CLOCK

GND

VDD

VGG

data bus

control bus

address bus

BZA800A

Fig.8 Microprocessor protection.

2000 Sep 25 8

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800A-series

Device placement and printed-circuit board layout

Circuit board layout is of extreme importance in the

suppression of trans i ents. The clamping voltag e of the

BZA800A is determined by the peak transient current and

the rate of rise of that current (di/d t) . Since parasitic

inductances can furth er add to the clamping voltage

(V = L di/dt) the series cond uctor lengths on the

printed-circuit board should be kept to a minimum. This

includes the lead length of the suppression element.

In addition to minimizing conductor length the following

printed-circuit board layout guidelines are recommended:

1. Place the suppress ion element close to the input

terminals or connectors

2. Keep parallel signal paths to a minimum

3. Avoid running prote ction conductors in parallel with

unprotected conductors

4. Minimize all printed-circuit board loop areas including

power and ground loops

5. Minimize the length of the transient return path to

ground

6. Avoid using shared transient return paths to a common

ground point.

2000 Sep 25 9

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800A-series

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT353

detail X

0 1 2 mm

scale

132

Plastic surface mounted package; 5 leads SOT353

UNIT A1

max bpcD

(2)

HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

97-02-28SC-88A

2000 Sep 25 10

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800A-series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or co mpleting a design.

2. The product s ta tus of device(s) described in this do cument may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t s pecification.

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General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tio n.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

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case of any incons istency or conflict between information

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/03/pp11 Date of release: 2000 Sep 25 Document order number: 9397 750 07142