TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
Devices Qualified Level
2N4150
2N4150S 2N5237
2N5237S 2N5238
2N5238S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N4150
2N4150S 2N5237
2N5237S
2N5238
2N5238S
Unit
Collector-Emitter Voltage VCEO 70 120 170 Vdc
Collector-Base Voltage VCBO 100 150 200 Vdc
Emitter-Base Voltage VEBO 10 Vdc
Collector Current IC 10 Adc
Total Power Dissipation @ TA = +250C(1)
@ TC = +1000C(2) PT 1.0
5.0 W
Operating & Storage Junction Temp. Range
T
J
,
T
stg
-65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
Junction-to-Ambient RθJC
RθJA
0.020
0.175 0C/mW
1) Derate linearly @ 5.7 mW/0C for TA > +250C
2) Derate linearly @ 50 mW/0C for TC > +250C
TO- 5*
2N4150, 2N5237,
2N5238
TO-39*
(TO-205AD)
2N4150S, 2N5237S,
2N5238S
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
IE = 10 µAdc
V(BR)EBO
7.0
Vdc
Collector-Emitter Breakdown Voltage
IC = 0.1 Adc 2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
V(BR)CEO
70
120
170
Vdc
Collector-Emitter Cutoff Current
VEB = 0.5 Vdc, VCE = 60 Vdc 2N4150, 2N4150S
VEB = 0.5 Vdc, VCE = 110 Vdc 2N5237, 2N5237S
VEB = 0.5 Vdc, VCE = 160 Vdc 2N5238, 2N5238S
ICEX
10
10
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N4150, 2N4150S, 2N5237, 2N5237S, 2N5238, 2N5238S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS (con’t)
Collector-Base Cutoff Current
VCE = 60 Vdc 2N4150, 2N4150S
VCE = 110 Vdc 2N5237, 2N5237S
VCE = 160 Vdc 2N5238, 2N5238S
ICEO
10
10
10
µAdc
Emitter-Base Cutoff Current
VBE = 7.0 Vdc
VBE = 5.0 Vdc
IEBO
10
0.1
µAdc
Collector-Base Cutoff Current
VCB = 100 Vdc 2N4150, 2N4150S
VCB = 150 Vdc 2N5237, 2N5237S
VCB = 200 Vdc 2N5238, 2N5238S
VCB = 80 Vdc All Types
ICBO
10
10
10
0.1
µAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 5.0 Vdc 2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
IC = 5.0 Adc, VCE = 5.0 Vdc All Types
IC = 10 Adc, VCE = 5.0 Vdc All Types
hFE
50
50
50
40
10
200
225
225
120
-
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
IC = 10 Adc, IB = 1.0 Adc
VCE(sat)
0.6
2.5
Vdc
Base-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
IC = 10 Adc, IB = 1.0 Adc
VBE(sat)
1.5
25
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.2 Adc, VCE = 10 Vdc, f = 10 MHz
hfe
1.5
7.5
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz 2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
hfe
40
40
40
160
160
250
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
350
pF
SWITCHING CHARACTERISTICS
Delay Time VCC = 20 Vdc, VBB = 5.0 Vdc,
td 50 µs
Rise Time IC = 5.0 Adc, IB1 = 0.5 Adc tr 500 µs
Storage Time VCC = 20 Vdc, VBB = 5.0 Vdc,
ts 1.5 µs
Fall Time IC = 5.0 Adc, IB1 = -IB2 = 0.5 Adc tf 500 µs
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 40 Vdc, IC = 0.22 Adc
Test 2
VCE = 70 Vdc, IC = 90 mAdc
Test 3
VCE = 120 Vdc, IC = 15 mAdc 2N5237, 2N5237S
VCE = 170 Vdc, IC = 3.5 mAdc 2N5238, 2N5238S
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
