Transistors
1
Publication date: March 2003 SJC00120BED
2SC2636
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation
■Features
•High transition frequency fT
•M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC50 mA
Collector power dissipation PC400 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 030 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 03V
Base-emitter voltage VBE VCB = 10 V, IE = −2 mA 720 mV
Forward current transfer ratio *hFE VCE = 10 V, IC = 2 mA 25
Transition frequency fTVCB = 10 V, IE = −15 mA, f = 200 MHz 600 1
200 1
600 MHz
Power gain GPVCB = 10 V, IE = −1 mA, f = 100 MHz 20 dB
Reverse transfer capacitance Crb VCB = 6 V, IE = 0, f = 1 MHz 0.8 pF
(Common base)
Reverse transfer capacitance Cre VCE = 10 V, IC = 1 mA, f = 10.7 MHz 1.5 pF
(Common emitter)
Collector-base parameter rbb' • CCVCB = 10 V, IE = −10 mA, f = 31.9 MHz 25 ps
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank T S
hFE 600 to 1
300 900 to 1
600
Unit: mm
6.9
±0.1
2.5
±0.1
(1.0)
(1.0)
(1.5)
(0.85) 0.45
±0.05
0.55
±0.1
(2.5)(2.5)
213
R 0.7
R 0.9
(0.4)
3.5
±0.1
4.5
±0.1
4.1
±0.2
2.4
±0.2
1.25
±0.05
2.0
±0.2
1.0
±0.1
(1.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
2SC2636
2SJC00120BED
IB VBE IC VBE VCE(sat) IC
PC TaIC VCE IC IB
hFE ICfT IECre VCE
0 16040 12080
0
500
400
300
200
100
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
018612
0
24
20
16
12
8
4
T
a
= 25°C
I
B
= 300 µA
50 µA
100 µA
150 µA
200 µA
250 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0 450150 300
0
24
20
16
12
8
4
V
CE
= 10 V
T
a
= 25°C
Base current IB (µA)
Collector current I
C
(mA)
0 1.80.6 1.2
0
400
300
100
200
VCE = 10 V
Ta = 25°C
Base-emitter voltage VBE (V)
Base current IB (µA)
0 2.01.60.4 1.20.8
0
60
50
40
30
20
10
V
CE
= 10 V
T
a
= 75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
0.1 1 10 100
0
240
200
160
120
80
40
VCE = 10 V
Ta = 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
− 0.1 −1−10 −100
0
1 600
1 200
400
800
T
a
= 25°C
V
CE
= 10 V
6 V
Transition frequency fT (MHz)
Emitter current IE (mA)
0.1 1 10 100
0
2.4
2.0
1.6
1.2
0.8
0.4
IC = 1 mA
f = 10.7 MHz
Ta = 25°C
Collector-emitter voltage VCE (V)
Reverse transfer capacitance Cre (pF)
(Common emitter)
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
2SC2636
3
SJC00120BED
Zrb IEGP IENF IE
bib gib brb grb bfb gfb
bob gob
− 0.1 −1−10
0
120
100
80
60
40
20
f = 2 MHz
T
a
= 25°C
V
CE
= 6 V
10 V
Reverse transfer impedance Zrb (Ω)
Emitter current IE (mA)
− 0.1 −1−10 −100
0
40
30
10
20
f = 100 MHz
R
g
= 50 Ω
T
a
= 25°C
V
CE
= 10 V
6 V
Power gain GP (dB)
Emitter current IE (mA)
− 0.1 −1−10 −100
0
12
10
8
6
4
2
V
CE
= 10 V
f = 100 MHz
R
g
= 50 kΩ
T
a
= 25°C
Noise figure NF (dB)
Emitter current IE (mA)
0504010 3020
−60
0
−10
−20
−30
−40
−50
yib = gib + jbib
VCB = 10 V
f = 900 MHz
IE = −2 mA
−5 mA
300
500
600
200
Input conductance g
ib
(mS)
Input susceptance b
ib
(mS)
−1.0 0− 0.2− 0.8 − 0.4− 0.6
−2.4
0
− 0.4
− 0.8
−1.2
−1.6
−2.0
y
rb
= g
rb
+ jb
rb
V
CB
= 10 V
f = 900 MHz
I
E
= −5 mA
−2 mA
300
500
600
200
Reverse transfer conductance g
rb
(mS)
Reverse transfer susceptance brb (mS)
−60 4020−40 0−20
0
48
40
32
24
16
8
y
fb
= g
fb
+ jb
fb
V
CB
= 10 V
f = 200 MHz
I
E
= −5 mA
−2 mA
300
500
600
900
Forward transfer conductance g
fb
(mS)
Forward transfer susceptance bfb (mS)
0 2.01.60.4 1.20.8
0
12
10
8
6
4
2
y
ob
= g
ob
+ jb
ob
V
CE
= 10 V
f = 200 MHz
I
E
= −2 mA −5 mA
300
500
600
900
Output conductance g
ob
(mS)
Output susceptance b
ob
(mS)
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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Electric Industrial Co., Ltd.
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
