VS-10CTQ150SPbF, VS-10CTQ150-1PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A VS-10CTQ150SPbF FEATURES VS-10CTQ150-1PbF * 175 C TJ operation * Center tap configuration * Low forward voltage drop * High frequency operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Base common cathode 2 Base common cathode 2 * Guard ring for enhanced ruggedness and long term reliability 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode D2PAK TO-262 * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * AEC-Q101 qualified * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRODUCT SUMMARY D2PAK, Package IF(AV) This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. TO-262 2x5A VR 150 V VF at IF 0.93 V IRM 7 mA at 125 C TJ max. 175 C Diode variation Common cathode EAS 5 mJ MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS 10 A Rectangular waveform VRRM IFSM tp = 5 s sine VF 5 Apk, TJ = 125 C (per leg) TJ Range 150 V 620 A 0.73 V -55 to +175 C VS-10CTQ150SPbF VS-10CTQ150-1PbF UNITS 150 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current, see fig. 5 SYMBOL per leg per device IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 155 C, rectangular waveform 5 s sine or 3 s rect. pulse Following any rated load condition and with rated VRRM applied VALUES 5 10 UNITS A 620 Maximum peak one cycle non-repetitive surge current per leg, see fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 C, IAS = 1 A, L = 10 mH 5 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 1 A Repetitive avalanche current per leg 10 ms sine or 6 ms rect. pulse 115 A Revision: 20-May-14 Document Number: 94116 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10CTQ150SPbF, VS-10CTQ150-1PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 5A Maximum forward voltage drop per leg See fig. 1 VFM (1) IRM (1) Threshold voltage VF(TO) 1.10 TJ = 25 C 0.86 0.05 VR = Rated VR TJ = 125 C V 0.73 TJ = 125 C 10 A UNITS 0.93 TJ = 25 C 10 A 5A Maximum reverse leakage current per leg See fig. 2 VALUES mA 7 TJ = TJ maximum 0.468 V 28 m Forward slope resistance rt Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 C 200 pF Typical series inductance per leg LS Measured lead to lead 5 mm from package body 8.0 nH Maximum voltage rate of change dV/dt 10 000 V/s VALUES UNITS -55 to +175 C Rated VR Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per leg 3.50 RthJC Maximum thermal resistance, junction to case per package DC operation 1.75 Typical thermal resistance, case to heatsink (only for TO-220) RthCS Mounting surface, smooth and greased 0.50 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf * cm (lbf * in) Approximate weight Mounting torque Marking device Case style D2PAK 10CTQ150S Case style TO-262 10CTQ150-1 100 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) C/W TJ = 175 C TJ = 125 C TJ = 25 C 10 1 TJ = 175 C 10 TJ = 150 C 1 TJ = 125 C 0.1 TJ = 100 C 0.01 TJ = 75 C TJ = 50 C 0.001 TJ = 25 C 0.0001 0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) Revision: 20-May-14 Document Number: 94116 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10CTQ150SPbF, VS-10CTQ150-1PbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 C 10 0 20 40 60 80 100 120 160 140 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 PDM t1 t2 0.01 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) 5 170 Average Power Loss (W) Allowable Case Temperature (C) 180 DC 160 150 Square wave (D = 0.50) 80 % rated VR applied 140 130 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 4 3 RMS limit 2 DC 1 See note (1) 0 120 0 2 4 6 8 0 1 2 3 4 5 6 7 8 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Revision: 20-May-14 Document Number: 94116 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10CTQ150SPbF, VS-10CTQ150-1PbF www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V Revision: 20-May-14 Document Number: 94116 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10CTQ150SPbF, VS-10CTQ150-1PbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 C T Q 150 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (10 A) 3 - Circuit configuration: C = common cathode 4 - T = TO-220 5 - Schottky "Q" series 6 - Voltage rating (150 = 150 V) 7 - TRL PbF 8 9 S = D2PAK -1 = TO-262 8 - None = tube (50 pieces) TRL = tape and reel (left oriented - for D2PAK only) TRR = tape and reel (right oriented - for D2PAK only) 9 - PbF = lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95014 Part marking information www.vishay.com/doc?95008 Packaging information www.vishay.com/doc?95032 Revision: 20-May-14 Document Number: 94116 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D2PAK, TO-262 DIMENSIONS - D2PAK in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb 0.004 M B 0.010 M A M B Plating 2x e Base Metal (4) b1, b3 H Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0 to 8 L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 INCHES MAX. MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. INCHES MAX. MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 L3 2 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch Document Number: 95014 Revision: 31-Mar-09 e L4 (7) 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Outline conforms to JEDEC outline TO-263AB For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Outline Dimensions D2PAK, TO-262 Vishay Semiconductors DIMENSIONS - TO-262 in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL A c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 4.06 4.83 0.160 0.190 0.119 A1 2.03 3.02 0.080 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 NOTES 4 4 4 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e 2.54 BSC 0.100 BSC L 13.46 14.10 0.530 0.555 L1 - 1.65 - 0.065 L2 3.56 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches www.vishay.com 2 2 (6) 3 Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 95014 Revision: 31-Mar-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-10CTQ150SPBF VS-10CTQ150STRLPBF VS-10CTQ150-1PBF 10CTQ150S 10CTQ150STRL 10CTQ150STRR VS-10CTQ150STRRPBF