Semiconductor Group 1 Dec-12-1996
BFR 35AP
NPN Silicon RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents from
0.5mA to 20mA
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFR 35AP GEs Q62702-F938 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CEO 15 V
Collector-emitter voltage
V
CES 20
Collector-base voltage
V
CBO 20
Emitter-base voltage
V
EBO 2.5
Collector current
I
C 30 mA
Base current
I
B 4
Total power dissipation
T
S ≤ 48 °C
P
tot 280 mW
Junction temperature
T
j 150 °C
Ambient temperature
T
A- 65 ... + 150
Storage temperature
T
stg - 65 ... + 150
Thermal Resistance
Junction - soldering point 1)
R
thJS ≤ 365 K/W
1)
T
S is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 2 Dec-12-1996
BFR 35AP
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C = 1 mA,
I
B = 0
V
(BR)CEO 15 - - V
Collector-emitter cutoff current
V
CE = 20 V,
V
BE = 0
I
CES - - 10 µA
Collector-base cutoff current
V
CB = 10 V,
I
E = 0
I
CBO - - 100 nA
Emitter-base cutoff current
V
EB = 2.5 V,
I
C = 0
I
EBO - - 100 µA
DC current gain
I
C = 15 mA,
V
CE = 8 V
h
FE 40 100 200 -
Semiconductor Group 3 Dec-12-1996
BFR 35AP
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
I
C = 15 mA,
V
CE = 8 V,
f
= 500 MHz
f
T
3.5 5 - GHz
Collector-base capacitance
V
CB = 10 V,
f
= 1 MHz
C
cb - 0.38 0.6 pF
Collector-emitter capacitance
V
CE = 10 V,
f
= 1 MHz
C
ce - 0.2 -
Emitter-base capacitance
V
EB = 0.5 V,
f
= 1 MHz
C
eb - 0.7 -
Noise figure
I
C = 2 mA,
V
CE = 6 V,
Z
S =
Z
Sopt
f
= 900 MHz
f
= 1.8 GHz
F
-
- 2.9
1.8 -
-
dB
Power gain 2)
I
C = 15 mA,
V
CE = 8 V,
Z
S =
Z
Sopt
Z
L =
Z
Lopt
f
= 900 MHz
f
= 1.8 GHz
G
ma
-
- 9.5
15 -
-
Transducer gain
I
C = 15 mA,
V
CE = 8 V,
Z
S =
Z
L= 50 Ω
f
= 900 MHz
f
= 1.8 GHz
|
S
21e|2
-
- 7
12.5 -
-
2)
G
ma = |
S
21/
S
12| (k-(k2-1)1/2)
