Agilent MSA-2543 Cascadable Silicon Bipolar Gain Block MMIC Amplifier Data Sheet Applications * Cellular/PCS/WLL basestations * Wireless data/ WLAN * Fiber-optic systems * ISM Description Agilent Technologies' MSA-2543 is a low current silicon gain block MMIC amplifier housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Features * Small signal gain amplifier Providing a nominal 13.8 dB gain at up to 0 dBm Pout, this device is ideal for small-signal gain stages or IF amplification. * Low cost surface mount small plastic package SOT-343 (4 lead SC-70) * Wide bandwidth Surface Mount Package SOT-343/4-lead SC70 * 50 Ohms input & output * Tape-and-reel packaging option available Pin Connections and Package Marking Specifications 2 GHz; 5V, 12 mA (typ.) RF OUT/BIAS * 13.8 dB associated gain GROUND * 0 dBm P1dB Typical Biasing Configuration VCC = 5 V Rc C bypass IN C block OUT MSA Vd = 3.3 V GROUND RFin * 9 dBm P1dB at 30 mA * 4.5 dB noise figure * 13 dBm output IP3 RFC C block 25x The Darlington feedback structure provides inherent broad bandwidth performance. The 25 GHz ft fabrication process results in a device with low current draw and useful operation to past 3 GHz. * Low current draw * General purpose gain block amplifier * Useful gain past 3 GHz Note: Top View. Package marking provides orientation and identification. `x' is a character to identify date code. MSA-2543 Absolute Maximum Ratings [1] Symbol Parameter Units Absolute Maximum Id Device Current mA 40 Pdiss Total Power Dissipation [2] mW 140 Pin max. RF Input Power dBm 13 TJmax Junction Temperature C 150 TSTG Storage Temperature C -65 to 150 jc Thermal Resistance [3] C/W 139 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Ground lead temperature is 25C. Derate 7.4 mW/C for TL > 131C. 3. Thermal resistance measured using 150C Liquid Crystal Measurement method. Electrical Specifications TA = +25C, Id = 12 mA, ZO = 50, RF parameters measured in a test circuit for a typical device Symbol Parameter and Test Condition Vd Device Voltage GP Frequency 2 Power Gain (|S21| ) Units Min. Typ. [1] Max. V 2.9 3.3 3.8 0.02 13 15 13.8 15 0.3 0.2 900 MHz 2 GHz dB 0.1 to 2 GHz dB 0.55 GHz 3 GP Gain Flatness F3dB 3 dB Bandwidth VSWRin Input Voltage Standing Wave Ratio 0.1 to 2.5 GHz 2:1 VSWRout Output Voltage Standing Wave Ratio 0.1 to 6 GHz 1.7:1 NF 50 Noise Figure 900 MHz 2 GHz dB 4.5 4.5 0.14 0.11 P1dB Output Power at 1 dB Gain Compression 900 MHz 2 GHz dBm 0.4 0.2 0.1 0.1 OIP3 Output Third Order Intercept Point 900 MHz 2 GHz dBm 13 13 0.4 0.4 DV/dT Device Voltage Temperature Coefficient mV/C -3.4 Notes: 1. Typical value determined from a sample size of 500 parts from 6 wafers. 2. Standard deviation is based on 500 samples taken from 6 different wafers. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits. Input 50 Ohm Transmission Line (0.5 dB loss) DUT 50 Ohm Transmission Line Including Bias T (1.05 dB loss) Output Block diagram of 2 GHz production test board used for gain measurements. Circuit losses have been de-embedded from actual measurements. 2 MSA-2543 Typical Performance 35 18 6.5 16 30 6.0 14 20 15 GAIN (dB) 12 NF (dB) Id (mA) 25 5.5 5.0 10 8 6 10 4 4.5 -40C +25C +85C 5 2 0 4.0 3 3.2 3.4 3.6 3.8 0 0 2 Vd (V) 4 6 8 10 12 0 2 4 Figure 1. Id vs. Vd and Temperature. 8 10 12 Figure 3. Gain vs. Frequency at Id = 12 mA. Figure 2. NF vs. Frequency at Id = 12 mA. 16.5 2.0 6 FREQUENCY (GHz) FREQUENCY (GHz) 5.2 16.0 5.0 0 15.5 P1dB -2.0 -4.0 14.5 14.0 13.5 4.4 -8.0 4.2 -40C +25C +85C 12.5 12.0 0 2 4 6 8 10 12 4.0 0 5 10 15 20 25 30 0 35 10 Id (mA) FREQUENCY (GHz) 30 40 Figure 6. NF vs. Id vs. Temperature at 2 GHz. 15 7.0 12 20 Id (mA) Figure 5. Gain vs. Id and Temperature at 2 GHz. Figure 4. P1dB vs. Frequency at Id = 12 mA. 0.1 GHz 10 GHz 10 6.5 NF (dBm) 4 2 8 GHz 5.5 7 GHz 5.8 GHz 5.0 2.4 GHz 1.9 GHz 0.9 GHz 0.1 GHz 0 -40C +25C +85C -2 4.5 -4 P1dB (dBm) 6.0 6 10 20 30 40 Id (mA) Figure 7. P1dB vs. Id and Temperature at 2 GHz. 5 4 GHz 0 5.8 GHz 7 GHz 8 GHz 9 GHz 10 GHz -5 -10 4.0 0 0.9 GHz 1.9 GHz 2 GHz 2.4 GHz 10 9 GHz 8 P1dB (dBm) 4.6 13.0 -6.0 3 -40C +25C +85C 4.8 NF (dB) GAIN (dB) 15.0 0 5 10 15 20 25 Id (mA) Figure 8. NF vs. Id and Frequency. 30 35 0 5 10 15 20 25 Id (mA) Figure 9. P1dB vs. Id and Frequency. 30 35 MSA-2543 Typical Performance, continued 20 0 0 0.1 GHz 0.9 GHz 16 -5 1.9 GHz 2.4 GHz -10 5.8 GHz 7 GHz 8 GHz 9 GHz 10 GHz 8 ORL (dB) IRL (dB) GAIN (dB) -10 12 -20 -20 -30 4 12 mA 20 mA 30 mA 10 20 30 40 12 mA 20 mA 30 mA -25 -40 0 0 -15 -30 0 Id (mA) 2 4 6 8 10 0 FREQUENCY (GHz) Figure 10. Gain vs. Id and Frequency. 2 4 6 8 10 FREQUENCY (GHz) Figure 11. Input Return Loss vs. Frequency and Bias. Figure 12. Output Return Loss vs. Frequency and Bias. MSA-2543 Typical Scattering Parameters TA = 25C, Id = 12 mA Freq (GHz) s11 Mag s11 Ang s21 (dB) s21 (Mag) s21 (Ang) s12 (dB) s12 (Mag) s12 (Ang) s22 (Mag) s22 (Ang) K 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0.12 0.18 0.24 0.27 0.31 0.34 0.36 0.37 0.38 0.38 0.37 0.36 0.35 0.32 0.30 0.26 0.23 0.19 0.16 0.16 0.17 0.3 11.4 13.9 5.2 -1.6 -15.4 -23.9 -34.3 -45.1 -54.0 -65.1 -74.1 -84.8 -96.3 -106.4 -117.3 -129.4 -148.9 -170.2 158.6 128.0 14.54 14.78 14.70 14.25 13.69 13.04 12.48 11.77 11.11 10.63 10.04 9.64 9.21 8.78 8.42 8.09 7.81 7.45 7.12 6.71 6.28 5.33 5.48 5.44 5.16 4.83 4.49 4.21 3.88 3.59 3.40 3.18 3.04 2.89 2.75 2.64 2.54 2.46 2.36 2.27 2.17 2.06 173.9 160.2 140.3 121.9 108.2 97.1 85.0 71.1 58.3 48.0 35.7 26.1 14.6 3.1 -6.5 -17.4 -26.8 -38.4 -48.2 -59.9 -71.8 -19.60 -19.71 -19.70 -19.75 -19.82 -19.81 -19.73 -19.74 -19.81 -19.89 -19.94 -20.00 -20.14 -20.13 -20.07 -19.94 -19.76 -19.31 -18.85 -18.27 -17.58 0.105 0.103 0.104 0.103 0.102 0.102 0.103 0.103 0.102 0.101 0.101 0.100 0.098 0.098 0.099 0.101 0.103 0.108 0.114 0.122 0.132 -0.3 -2.6 -5.6 -8.1 -9.5 -12.4 -14.4 -17.4 -20.7 -23.4 -26.5 -29.1 -31.2 -32.8 -34.4 -36.4 -37.5 -39.2 -41.3 -43.5 -46.8 0.18 0.19 0.20 0.21 0.22 0.22 0.22 0.23 0.23 0.23 0.22 0.22 0.20 0.18 0.15 0.13 0.11 0.09 0.08 0.10 0.12 -1.3 -8.2 -12.1 -21.2 -27.9 -32.6 -37.8 -44.8 -51.1 -57.2 -65.2 -72.0 -80.7 -91.8 -100.5 -114.7 -130.7 -160.9 171.1 140.8 115.2 1.15 1.14 1.12 1.14 1.16 1.20 1.22 1.28 1.35 1.41 1.50 1.58 1.69 1.79 1.88 1.95 2.00 2.01 1.99 1.95 1.87 Notes: 1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead. The parameters include the effect of four plated through via holes connecting ground landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each ground lead contact point, one via on each side of that point. 4 MSA-2543 Typical Scattering Parameters TA = 25C, Id = 20 mA Freq (GHz) s11 Mag s11 Ang s21 (dB) s21 (Mag) s21 (Ang) s12 (dB) s12 (Mag) s12 (Ang) s22 (Mag) s22 (Ang) K 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0.07 0.13 0.19 0.25 0.29 0.33 0.35 0.37 0.37 0.37 0.37 0.36 0.34 0.32 0.29 0.26 0.23 0.18 0.15 0.14 0.15 19.2 36.9 35.7 17.4 4.6 -3.1 -14.1 -26.1 -37.9 -47.3 -58.7 -67.9 -78.9 -90.2 -99.9 -110.5 -122.0 -140.8 -162.0 164.6 131.8 17.12 17.05 16.68 15.92 15.10 14.26 13.52 12.67 11.91 11.36 10.72 10.29 9.80 9.35 8.99 8.65 8.36 7.99 7.67 7.26 6.85 7.18 7.12 6.82 6.25 5.69 5.16 4.74 4.30 3.94 3.70 3.44 3.27 3.09 2.94 2.81 2.71 2.62 2.51 2.42 2.31 2.20 173.6 158.6 137.4 118.0 103.8 92.8 80.9 67.6 55.1 45.2 33.4 24.0 12.8 1.6 -7.7 -18.3 -27.6 -39.1 -48.8 -60.4 -72.1 -20.47 -20.52 -20.44 -20.29 -20.21 -20.08 -20.01 -19.97 -19.92 -19.99 -19.99 -20.04 -20.12 -20.04 -19.95 -19.75 -19.51 -19.00 -18.59 -17.92 -17.19 0.095 0.094 0.095 0.097 0.098 0.099 0.100 0.100 0.101 0.100 0.100 0.100 0.099 0.100 0.101 0.103 0.106 0.112 0.118 0.127 0.138 -0.7 -1.8 -3.4 -5.3 -6.9 -8.7 -11.2 -14.4 -17.9 -20.5 -23.4 -25.7 -28.2 -30.1 -31.4 -33.7 -34.8 -36.5 -38.9 -41.8 -45.7 0.06 0.08 0.12 0.16 0.18 0.19 0.20 0.22 0.22 0.22 0.22 0.22 0.20 0.18 0.15 0.12 0.10 0.08 0.06 0.08 0.11 5.0 4.9 16.8 5.2 -5.1 -12.7 -20.0 -29.2 -37.3 -45.0 -53.8 -61.2 -70.4 -81.2 -89.0 -101.9 -116.6 -146.8 179.8 141.9 111.7 1.07 1.07 1.05 1.06 1.08 1.11 1.14 1.20 1.26 1.33 1.41 1.49 1.59 1.68 1.76 1.82 1.86 1.86 1.85 1.80 1.72 Notes: 1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the and of the input lead. The output reference plane is at the and of the output lead. The parameters include the effect of four plated through via holes connecting ground landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each ground lead contact point, one via on each side of that point. MSA-2543 Typical Scattering Parameters TA = 25C, Id = 30 mA Freq (GHz) s11 Mag s11 Ang s21 (dB) s21 (Mag) s21 (Ang) s12 (dB) s12 (Mag) s12 (Ang) s22 (Mag) s22 (Ang) K 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0.03 0.11 0.20 0.25 0.29 0.33 0.35 0.37 0.37 0.37 0.36 0.36 0.34 0.31 0.29 0.25 0.22 0.18 0.15 0.13 0.15 78.4 56.5 49.4 25.8 10.4 1.3 -10.6 -23.4 -35.6 -45.4 -56.9 -66.4 -77.4 -89.0 -98.7 -109.5 -120.9 -139.9 -162.0 163.5 129.7 17.91 17.78 17.31 16.45 15.57 14.67 13.88 12.99 12.20 11.63 10.98 10.53 10.04 9.58 9.22 8.88 8.59 8.21 7.89 7.49 7.09 7.86 7.74 7.33 6.65 6.01 5.42 4.94 4.46 4.07 3.82 3.54 3.36 3.18 3.01 2.89 2.78 2.69 2.57 2.48 2.37 2.26 173.6 157.9 136.2 116.6 102.3 91.2 79.4 66.1 53.9 43.9 32.3 22.9 11.8 0.7 -8.7 -19.1 -28.3 -39.8 -49.4 -61.1 -72.7 -20.96 -20.89 -20.67 -20.47 -20.30 -20.16 -20.03 -20.02 -19.96 -19.98 -19.94 -20.08 -20.09 -20.13 -19.95 -19.71 -19.48 -18.98 -18.53 -17.89 -17.19 0.090 0.090 0.093 0.095 0.097 0.098 0.100 0.100 0.100 0.100 0.101 0.099 0.099 0.099 0.101 0.103 0.106 0.112 0.118 0.128 0.138 -0.5 -0.7 -1.4 -3.4 -4.9 -7.4 -9.7 -13.6 -16.9 -19.7 -22.5 -25.3 -27.3 -29 -30.8 -32.8 -34 -36 -38.1 -41.3 -44.6 0.06 0.09 0.12 0.15 0.18 0.20 0.21 0.22 0.23 0.24 0.23 0.23 0.22 0.19 0.17 0.14 0.11 0.08 0.07 0.07 0.10 15.5 22.2 39.7 21.1 7.3 -2.6 -11.6 -22.5 -31.5 -39.6 -49.1 -57.2 -66.4 -77.3 -84.9 -96.8 -110.1 -137.4 -166.4 151.7 118.3 1.06 1.05 1.02 1.03 1.04 1.07 1.10 1.16 1.22 1.28 1.37 1.45 1.54 1.65 1.72 1.77 1.81 1.82 1.81 1.76 1.69 Notes: 1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the and of the input lead. The output reference plane is at the and of the output lead. The parameters include the effect of four plated through via holes connecting ground landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each ground lead contact point, one via on each side of that point. 5 MSA-2543 ADS Model INSIDE Package Var Ean VAR VAR3 K=5 Z1=30 Z2=85 TLINP TL3 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 F=1 GHz TanD=0.001 C C2 C=0.1 pF INPUT Port G Num=1 VIA2 V5 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil TLINP TL12 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001 TLINP TL4 Z=Z2 Ohm L=25 mil K=K A=0.000 F=1 GHz TanD=0.001 L L3 L=0.6 nH R=0.001 die_MSA25 X1 VIA2 V1 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil TLINP TL2 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001 TLINP TL10 Z=Z2 Ohm L=10.0 mil K=K A=0.000 F=1 GHz TanD=0.001 L L8 L=0.2 nH R=0.001 C C3 C=0.11 pF GROUND Port S1 Num=2 L L2 L=0.2 nH R=0.001 Note: Vias are not part of the package. They are only added during simulation to account for the vias in the test fixture. VIA2 V2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 F=1 GHz TanD=0.001 MSub MSUB MSub2 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil L L5 L=0.6 nH R=0.001 GROUND TLINP TL9 Z=Z2/2 Ohm L=5.0 mil K=K A=0.0000 F=1 GHz TanD=0.001 TLINP TL5 Z=Z1 Ohm L=15.0 mil K=1 A=0.0000 F=1 GHz TanD=0.001 Port S2 VIA2 Num=4 V5 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 OUTPUT W=40.0 mil TLINP TL7 Z=Z2 Ohm L=26.0 mil K=K A=0.0000 F=1 GHz TanD=0.001 TLINP TL8 Z=Z1 Ohm L=15.0 mil K=1 A=0.0000 F=1 GHz TanD=0.001 Port D Num=4 Port P2 Num=2 R R1 R=500 Ohm Q1_MS A25 X1 Port P1 Num=1 Q2_MS A25 X2 R R2 R=580 Ohm Port P3 Num=3 6 R R3 R=450 Ohm R R4 R=2.5 Ohm Q1 MSA-25 Transistor Model Port P1 Num=1 R RCX R=12.292289 Ohm TC1=0.113e-02 C CCOX C=0.010173664 pF R RBX R=5.4559755 Ohm TC1=0.14e-02 Port P1 Num=1 CEOX C=3.33633479e-15F Diode DIODEI Model=DIODEMI Mode=nonlinear Diode DIODE2 Model=DIODEM2 Mode=nonlinear Diode DIODE3 Model=DIODEM3 Mode=nonlinear BJT4_NPN BJTl Model=BJTMI Area= Mode=nonlinear R RE R=3.14157382 Ohm Port R P1 RSE Num=1 R=1 Ohm BJT_Model BJTMI NPN=yes PNP=no Bf=le6 lkf=7.34322392e-02 lse=3.5215327e-20 Ne=1.006 Vaf=44 Nf=1 Tf=5.2703649e-12 Xtf=20 Vtf=0.8 Itf=0.113118088 Ptf=22 Xtb=0.7 Approxqb=yes Br=1 kr=6e-3 Isc= Nc=2 Var=3.37 Nr=1.005 Tr=4e-9 Eg=1.17 Is=2.22115249e-18 Imax= Xti=3 Tnom=21 Nk= Iss= Ns= Cjc=1.392204e-14 Vjc=0.6775 Mjc=0.3319 Xcjc=4.2587169e-1 Fc=0.8 Cje=3.724248e-14 Vje=0.9907 Mje=0.5063 Cjs= Vjs= Mjs= Rb=1.836672e1 Irb=4.075817e-5 Rbm=0.1 RbModel=MDS Q2 MSA-25 Transistor Model Port P1 Num=1 CEOX C=1.3345339e-14F Diode DIODEI Model=DIODEMI Mode=nonlinear Diode DIODE2 Model=DIODEM2 Mode=nonlinear Diode DIODE3 Model=DIODEM3 Mode-nonlinear BJT4_NPN BJTl Model=BJTMI Area= Mode=nonlinear 7 Port P1 Num=1 Br=1 kr=2.4e-02 Isc= Nc=2 Var=3.37 Nr=1.005 Tr=4e-9 Eg=1.17 Is=8.088460996e-18 Imax= Xti=3 Tnom=21 Nk= Iss= Ns= Diode_Model DIODEM3 Is=1e-24 Rs=2.63793e2 N= Tt= Cjo=6.60918e-14 Vj=0.6 M=0.42 Eg= Fc=0.8 Tnom=21 R RCX R=3.18472237 Ohm TC1=0.113e-02 R RE R=0.785393454 Ohm BJT_Model BJTMI NPN=yes PNP=no Bf=le6 lkf=2.93728957e-01 lse=1.408613e-19 Ne=1.006 Vaf=44 Nf=1 Tf=5.2703649e-12 Xtf=20 Vtf=0.8 Itf=0.45272352 Ptf=22 Xtb=0.7 Approxqb=yes Diode_Model DIODEM2 Is=1e-24 Rs= N=1.0029 Tt= Cjo=1.31257503e-14 Vj=0.8971 M=2.292e-1 Eg= Fc=0.8 Tnom=21 Port P1 Num=1 C CCOX C=0.040694656pF R RBX R=0.699275278 Ohm TC1=0.14e-02 Re= Rc= Kf=6.666068e-23 Af=2 Kb= Ab= Fb= Ffe= Lateral=no Diode_Model DIODEMI Is=7.81071283e-18 Rs= N=1 Tt= Cjo=1.35716e-14 Vj=0.729 M=0.44 Eg= Fc=0.8 Tnom=21 Cjc=5.568816e-14 Vjc=0.6775 Mjc=0.3319 Xcjc=4.2587169e-1 Fc=0.8 Cje=1.489699e-13 Vje=0.9907 Mje=0.5063 Cjs= Vjs= Mjs= Rb=4.59167994 Irb=1.6303268e-4 Rbm=2.5e-02 RbModel=MDS R RSE R=1 Ohm Re= Rc= Kf=4.16629284e-24 Af=2 Kb= Ab= Fb= Ffe= Lateral=no Diode_Model DIODEMI Is=3.12428513e-17 Rs= N=1 Tt= Cjo=5.42864e-14 Vj=0.729 M=0.440 Eg= Fc= Tnom=21 Diode_Model DIODEM2 Is=1e-24 Rs= N=1.0029 Tt= Cjo=5.25030011e-14 Vj=0.8971 M=2.292e-1 Eg= Fc=0.8 Tnom=21 Diode_Model DIODEM3 Is=1e-24 Rs=1.8288818e2 N= Tt= Cjo=1.7194806e-13 Vj=0.6 M=0.42 Eg= Fc=0.8 Tnom=21 MSA-2543 RFIC Amplifier Description Agilent Technologies' MSA-2543 is a low current silicon gain block RFIC amplifier housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Providing a nominal 14 dB gain at up to +8 dBm Pout, this device is ideal for small-signal gain stages or IF amplification. The Darlington feedback structure provides inherent broad bandwidth performance. The 25 GHz f t fabrication process results in a device with low current draw and useful operation above 3 GHz. pin. The power supply connection to the RF Output pin is achieved by means of a RF choke (inductor). The value of the RF choke must be large relative to 50 in order to prevent loading of the RF Output. The supply voltage end of the RF choke is bypassed to ground with a capacitor. Blocking capacitors are normally placed in series with the RF Input and the RF Output to isolate the DC voltages on these pins from circuits adjacent to the amplifier. The values for the blocking and bypass capacitors are selected to provide a reactance at the lowest frequency of operation that is small relative to 50. A feature of the MSA-2543 is its broad bandwidth that is useful in many satellite-based TV, cable TV and datacom systems. C2 Vd 25x RFC Vcc In addition to use in buffer and driver amplifier applications in the TV market, the MSA-2543 will find many applications in wireless communication systems. Application Guidelines The MSA-2543 is very easy to use. For most applications, all that is required to operate the MSA-2543 is to apply 12 mA to 30 mA to the RF Output pin. RF Input and Output The RF Input and Output ports of the MSA-2543 are closely matched to 50. DC Bias The MSA-2543 is a current-biased device that operates from a 12 mA to 30 mA current source. Curves of typical performance as a function of bias current are shown in section one of the data sheet. Figure 1 shows a typical implementation of the MSA-2543. The supply current for the MSA-2543 must be applied to the RF Output 8 Rc C1 C3 Figure 1. Schematic Diagram with Bias Connections. PCB Layout A recommended PCB pad layout for the miniature SOT-343 (SC-70) package that is used by the MSA-2543 is shown in Figure 2. 1.30 0.051 0.80 0.031 1.71 0.067 0.50 0.020 .080 0.031 1.15 0.045 Figure 2. PCB Pad Layout for MSA-2543. Package dimensions in mm/inches. This layout provides ample allowance for package placement by automated assembly equipment without adding parasitics that could impair the high frequency RF performance of the MSA-2543. The layout is shown with a footprint of a SOT-343 package superimposed on the PCB pads for reference. Starting with the package pad layout in Figure 3, an RF layout similar to the one shown in Figure 3 is a good starting point for microstripline designs using the MSA-2543 amplifier. PCB Materials FR-4 or G-10 type materials are good choices for most low cost wireless applications using single or multi-layer printed circuit boards. Typical single-layer board thickness is 0.020 to 0.031 inches. Circuit boards thicker than 0.031 inches are not recommended due to excessive inductance in the ground vias. This is discussed in more detail in the section on RF grounding. Applications Example The printed circuit layout in Figure 3 is a multi-purpose layout that will accommodate components for using the MSA-2543 for RF inputs from DC through 3 GHz. This layout is a microstripline design (solid groundplane on the backside of the circuit board) with 50 interfaces for the RF input and output. The circuit is fabricated on 0.031-inch thick FR-4 dielectric material. Plated through holes (vias) are used to bring the ground to the top side of the circuit where needed. Multiple vias are used to reduce the inductance of the paths to ground. Agilent Technologies IP 4/00 MSA-2X43 IN OUT Vcc Figure 3. Multi-purpose Evaluation Board. The amplifier and related components are assembled onto the printed circuit board as shown in Figure 6. The MSA-2X43 circuit board is designed to use edgemounting SMA connectors such as Johnson Components, Inc., Model 142-0701-881. These connectors are designed to slip over the edge of 0.031-inch thick circuit boards and obviate the need to mount PCBs on a metal base plate for testing. The center conductors of the connectors are soldered to the input and output microstrip lines. The ground pins are soldered to the ground plane on the back of the board and to the top ground pads. DC blocking capacitors are required at the input and output of the IC. The values of the blocking capacitors are determined by the lowest frequency of operation for a particular application. The capacitor's reactance is chosen to be 10% or less of the amplifier's input or output impedance at the lowest operating frequency. For example, an amplifier to be used in an application covering the 900 MHz band would require an input blocking capacitor of at least 39 pF, which is 4.5 of reactance at 900 MHz. The Vcc connection to the amplifier must be RF bypassed by placing a capacitor to ground at the bias pad of the board. Like the DC blocking capacitors, the value of the Vcc bypass capacitor is 9 determined by the lowest operating frequency for the amplifier. Space is available on the circuit board to add a bias choke, bypass capacitors, and collector resistors. The MSA series of ICs requires a bias resistor to ensure thermal stability. The bias resistor value is calculated from the operating current value, device voltage and the supply voltage; see equation below. When applying bias to the board, start at a low voltage level and slowly increase the voltage until the recommended current is reached. Both power and gain can be adjusted by varying Id. Rc = Vcc - Vd Id Where: Vcc = The power supply voltage applied to Rc (volts) Vd = The device voltage (volts) Id = The quiescent bias current drawn by the device Notes on Rc Selection The value of Rc is dependant on Vd, any production variation in Vd will have an effect on Id. As the gain and power performance of the MSA-2543 may be adjusted by varying Id this will have to be taken into account. The characterization data in section one shows the relationship between Vd and Id over temperature. At lower temperatures the value of Vd increases. The increase in Vd at low temperatures and production variations may cause potential problems for the amplifier performance if it is not taken into account. One solution would be to increase the voltage supply to have at least a 4V drop across the bias resistor Rc. This will guarantee good temperature stability over temperature. Table 1 shows the effects of Rc on the performance of the MSA-2543 over temperature. An alternative solution would be to use an active bias circuit described shown in Figure 4. The resitors R1 and R2 form a potential diver circuit to set the base voltage of the PNP transistor, typical values for these resistors are in the order of 5 K. The value of Rc is approximated by assuming a 1V drop across it, see equation below. The value of the RF choke should be large compared to 50, typical value for a 1.9 GHz amplifier would be 22 nH. The DC blocking capacitors are calculated as described above. A typical value for C3 would be 1.0 F. Rc = 1 Id Table 1. Effects of Rc on Performance over Temperature. Operating voltage = 3.3V nominally. Voltage Drop, volts Resistor Value, Ohms Temperature, C Bias Current, mA Power Gain @ 2.0 GHz, dB 0 0 0 25 85 6.3 12.0 28.4 9.1 13.5 14.3 1.7 150 0 25 85 11.3 12.0 13.5 13.7 13.5 13.1 4.0 330 0 25 85 11.8 12.0 12.8 13.7 13.5 12.8 6.7 510 0 25 85 11.8 12.0 12.5 13.6 13.5 12.8 C2 Vd RFC 25x Vcc C3 C1 Rc R1 R2 Figure 4. Active Bias Circuit. 1.9 GHz Design To illustrate the simplicity of using the MSA-2543, a 1.9 GHz amplifier for PCS type applications is presented. The amplifier uses a 5V, 12 mA supply. The input and output of the MSA-2543 is already well matched to 50 and no additional matching is needed. Performance of MSA-2543 1.9 GHz Amplifier The amplifier is biased at a Vcc of 5 volts, Id of 12 mA. The measured gain, noise figure, input and output return loss of the completed amplifier is shown in Figures 7. Noise figure is a nominal 4.5 to 4.7 dB from 1800 through 2000 MHz. Gain is a minimum of 13.2 dB from 1800 MHz through 2000 MHz. The amplifier output intercept point (OIP3) was measured at a nominal +11.5 dBm. P-1dB measured +1.5 dBm. The input terminal of the MSA-2543 is not at ground potential, an input DC blocking capacitor is needed. The values of the DC blocking and RF bypass capacitors should be chosen to provide a small reactance (typically < 5 ohms) at the lowest operating frequency. For this 1.9 GHz design example, 18 pF capacitors with a reactance of 4.5 ohms are adequate. The reactance of the RF choke (RFC) should be high (i.e., several hundred ohms) at the lowest frequency of operation. A 22 nH inductor with a reactance of 262 ohms at 1.9 GHz is sufficiently high to minimize the loss from circuit loading. 16 GAIN, NOISE FIGURE, INPUT and OUTPUT RETURN LOSS (dB) The active bias solution will only require about a 1.3V difference between Vcc and Vd for good bias stability over temperature. For more details on the active bias circuit please refer to application note AN-A003 Biasing MODAMP MMICs. Table 2. Component Parts List for the MSA-2543 Amplifier at 1.9 GHz. R1 150 chip resistor RFC 22 nH LL1608-FH22N C1,C2 18 pF chip capacitor C3 RFC= 22 nH Vcc=5V C1=18 pf Rc=150 C3=330 pF Figure 5. Schematic of 1.9 GHz Circuit. 10 Input RL -8 330 pF chip capacitor Agilent Technologies IP 4/00 MSA-2X43 OUT Vcc Figure 6. Complete 1.9 GHz Amplifier. 1.8 2 2.2 2.4 2.6 Figure 7. Gain, Noise Figure, Input and Output Return Loss Results. The completed 1.9 GHz amplifier for this example with all components and SMA connectors assembled is shown in Figure 6. IN Output RL -16 FREQUENCY (GHz) 25x A schematic diagram of the complete 1.9 GHz circuit with DC biasing is shown in Figure 5. DC bias is applied to the MSA-2543 through the RFC at the RF Output pin. The power supply connection is bypassed to ground with capacitor C3. Provision is made for an additional bypass capacitor, C4, to be added to the bias line near the +5 volt connection. C4 will not normally be needed unless several stages are cascaded using a common power supply. Noise 0 -24 1.6 C2=18 pF 25x Gain 8 C2=39 pF 25x 6 Noise 0 -6 Input RL -12 Output RL -18 0.6 RFC= 47 nH 0.8 1.0 1.2 1.4 FREQUENCY (GHz) Rc=56 C3=680 pF Figure 8. Schematic of 900 MHz Circuit. Table 3. Component Parts List for the MSA-2543 Amplifier at 900 MHz. R1 56 chip resistor RFC 47 nH LL1608-FH47N C1,C2 39 pF chip capacitor C3 680 pF chip capacitor Performance of MSA-2543 900 MHz Amplifier The amplifier is biased at a Vcc of 5 volts, Id of 30 mA. The measured gain, noise figure, input and output return loss of the completed amplifier is shown in Figure 9. Noise figure is a nominal 4.5 to 4.7 dB from 800 through 1000 MHz. Gain is a minimum of 16.5 dB from 800 MHz through 1000 MHz. The input return loss at 900 MHz is 14.5 dB with a corresponding output return loss of 15.5 dB. The amplifier output intercept point (OIP3) was measured at a nominal +23.5 dBm. P-1dB measured +11.2 dBm. 11 Gain 12 -24 0.4 Vcc=5V C1=39 pF 18 GAIN, NOISE FIGURE,INPUT and OUTPUT RETURN LOSS (dB) 900 MHz Design The 900 MHz example follows the same design approach that was described in the previous 1900 MHz design. A schematic diagram of the complete 900 MHz circuit is shown in Figure 8. And the component part list is show in Table 3. Figure 9. Gain, Noise Figure, Input and Output Return Loss Results. Designs for Other Frequencies The same basic design approach described above for 1.9 GHz can be applied to other frequency bands. Inductor values for matching the input for low noise figure are shown in Table 4. Table 4. Input and Output Inductor Values for Various Operating Frequencies. Frequency C1 & C2, pF RFC, nH C3, pF 400 MHz 88 100 1500 900 MHz 39 47 680 1900 MHz 18 22 330 2.4 GHz 15 18 270 3.5 GHz 18 15 22 5.8 GHz 1.8 6.8 10 Actual component values may differ slightly from those shown in Table 3 due to variations in circuit layout, grounding, and component parasitics. A CAD program such as Agilent Technologies' ADS (R) is recommended to fully analyze and account for these circuit variables. Notes on RF Grounding The performance of the MSA series is sensitive to ground path inductance. Good grounding is critical when using the MSA-2543. The use of via holes or equivalent minimal path ground returns as close to the package edge as is practical is recommended to assure good RF grounding. Multiple vias are used on the evaluation board to reduce the inductance of the path to ground. The effects of the poor grounding may be observed as a "peaking" in the gain versus frequency response, an increase in input VSWR, or even as return gain at the input of the RFIC. A Final Note on Performance Actual performance of the MSA RFIC mounted on the demonstration board may not exactly match data sheet specifications. The board material, passive components, and connectors all introduce losses and parasitics that may degrade device performance, especially at higher frequencies. Some variation in measured results is also to be expected as a result of the normal manufacturing distribution of products. Statistical Parameters Several categories of parameters appear within this data sheet. Parameters may be described with values that are either "minimum or maximum," "typical," or "standard deviations." Standard statistics tables or calculations provide the probability of a parameter falling between any two values, usually symmetrically located about the mean. Referring to Figure 10 for example, the probability of a parameter being between 1 is 68.3%; between 2 is 95.4%; and between 3 is 99.7%. Input Reference Plane Test Fixture Vias 25x The values for parameters are based on comprehensive product characterization data, in which automated measurements are made on of a minimum of 500 parts taken from six non-consecutive process lots of semiconductor wafers. The data derived from product characterization tends to be normally distributed, e.g., fits the standard bell curve. Test Fixture Vias Output Reference Plane TEST FIXTURE Parameters considered to be the most important to system performance are bounded by minimum or maximum values. For the MSA-2543, these parameters are: Gain (Gtest) and Device Voltage (Vd). Each of the guaranteed parameters is 100% tested as part of the manufacturing process. Values for most of the parameters in the table of Electrical Specifications that are described by typical data are the mathematical mean (), of the normal distribution taken from the characterization data. For parameters where measurements or mathematical averaging may not be practical, such as S-parameters or Noise Parameters and the performance curves, the data represents a nominal part taken from the center of the characterization distribution. Typical values are intended to be used as a basis for electrical design. To assist designers in optimizing not only the immediate amplifier circuit using the MSA-2543, but to also evaluate and optimize tradeoffs that affect a complete wireless system, the standard deviation () is provided for many of the Electrical Specifications parameters (at 25C) in addition to the mean. The standard deviation is a measure of the variability about the mean. It will be recalled that a normal distribution is completely described by the mean and standard deviation. 12 68% Figure 11. Phase Reference Planes. 95% 99% -3 -2 -1 Mean +1 +2 (), typ +3 Parameter Value Figure 10. Normal Distribution. Phase Reference Planes The positions of the reference planes used to specify S-parameters for the MSA-2543 are shown in Figure 11. As seen in the illustration, the reference planes are located at the point where the package leads contact the test circuit for the RF input and RF output/bias. As noted under the s-parameter table in section one of the data sheet the MSA-2543 was tested in a fixture that includes plated through holes through a 0.025" thickness printed circuit board. Due to the complexity of de-embedding these grounds, the S-parameters include the effects of the test fixture grounds. Therefore, when simulating the performance of the MSA-2543 the added ground path inductance should be taken into account. For example if you were designing an amplifier on 0.031" thickness printed circuit board material, only the difference in the printed circuit board thickness needs to be included in the simulation, i.e. 0.031" - 0.025" =0.006". SMT Assembly Reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: method of heating (e.g., IR or vapor phase reflow, wave soldering, etc.) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. Components with a low mass, such as the SOT-343 package, will reach solder reflow temperatures faster than those with a greater mass. The MSA-2543 is qualified to the time-temperature profile shown in Figure 12. This profile is representative of an IR reflow type of surface mount assembly process. After ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat zones. The preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. The reflow zone briefly elevates the temperature sufficiently to produce a reflow of the solder. The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low enough to not cause deformation of the board or damage to components due to thermal shock. The maximum temperature in the reflow zone (TMAX) should not exceed 235C. human body and on test equipment) can discharge without detection and may result in degradation in performance, reliability, or failure. These parameters are typical for a surface mount assembly process for the MSA-2543. As a general guideline, the circuit board and components should be exposed only to the minimum temperatures and times necessary to achieve a uniform reflow of solder. Electronic devices may be subjected to ESD damage in any of the following areas: * Storage & handling * Inspection & testing * Assembly * In-circuit use Electrostatic Sensitivity RFICs are electrostatic discharge (ESD) sensitive devices. Although the MSA-2543 is robust in design, permanent damage may occur to these devices if they are subjected to high energy electrostatic discharges. Electrostatic charges as high as several thousand volts (which readily accumulate on the Application Notes AN-S001: Basic MODAMP MMIC Circuit Techniques AN-S002: MODAMP MMIC Nomenclature AN-S003: Biasing MODAMP MMICs AN-S011: Using Silicon MMIC Gain Blocks as Transimpedance Amplifiers AN-S012: MagIC Low Noise Amplifiers The MSA-2543 is a ESD Class 1 device. Therefore, proper ESD precautions are recommended when handling, inspecting, testing, assembling, and using these devices to avoid damage. References Performance data for MSA series of amplifiers are found in the CD ROM Catalog or http:// www.agilent.com/view/rf 250 TMAX TEMPERATURE (C) 200 150 Reflow Zone 100 Preheat Zone Cool Down Zone 50 0 0 60 120 180 TIME (seconds) Figure 12. Surface Mount Assembly Profile. 13 240 300 Ordering Information Part Number No. of Devices Container MSA-2543-TR1 3000 7" Reel MSA-2543-TR2 10000 13"Reel MSA-2543-BLK 100 antistatic bag Package Dimensions Outline 43 SOT-343 (SC70 4-lead) 1.30 (0.051) BSC 1.30 (.051) REF 2.60 (.102) E 1.30 (.051) E1 0.85 (.033) 0.55 (.021) TYP 1.15 (.045) BSC e 1.15 (.045) REF D h A b TYP A1 L DIMENSIONS SYMBOL A A1 b C D E e h E1 L MAX. MIN. 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0 (0) 0.35 (0.014) 0.25 (0.010) 0.20 (0.008) 0.10 (0.004) 2.10 (0.083) 1.90 (0.075) 2.20 (0.087) 2.00 (0.079) 0.65 (0.025) 0.55 (0.022) 0.450 TYP (0.018) 1.35 (0.053) 1.15 (0.045) 0.35 (0.014) 0.10 (0.004) 10 0 DIMENSIONS ARE IN MILLIMETERS (INCHES) 14 C TYP Device Orientation REEL TOP VIEW END VIEW 4 mm CARRIER TAPE 8 mm USER FEED DIRECTION COVER TAPE Tape Dimensions For Outline 4T P P2 D P0 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) K0 8 MAX. A0 DESCRIPTION 15 5 MAX. B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 0.05 4.00 0.10 1.75 0.10 0.061 0.002 0.157 0.004 0.069 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 0.30 0.255 0.013 0.315 0.012 0.010 0.0005 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.4 0.10 0.062 0.001 0.205 0.004 0.0025 0.00004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 0.05 0.138 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 0.05 0.079 0.002 www.semiconductor.agilent.com Data subject to change. Copyright (c) 2000 Agilent Technologies, Inc. 5980-1087E (10/00)