Agilent MSA-2543
Cascadable Silicon Bipolar
Gain Block MMIC Amplifier
Data Sheet
Description
Agilent Technologies’ MSA-2543 is
a low current silicon gain block
MMIC amplifier housed in a 4-lead
SC-70 (SOT-343) surface mount
plastic package.
Providing a nominal 13.8 dB gain
at up to 0 dBm Pout, this device is
ideal for small-signal gain stages
or IF amplification.
The Darlington feedback structure
provides inherent broad band-
width performance. The 25 GHz ft
fabrication process results in a
device with low current draw and
useful operation to past 3 GHz.
Features
• Small signal gain amplifier
• Low current draw
• Wide bandwidth
• 50 Ohms input & output
• Low cost surface mount
small plastic package SOT-343
(4 lead SC-70)
• Tape-and-reel packaging option
available
Specifications
2 GHz; 5V, 12 mA (typ.)
• 13.8 dB associated gain
• 0 dBm P1dB
• 9 dBm P1dB at 30 mA
• 4.5 dB noise figure
• 13 dBm output IP3
• Useful gain past 3 GHz
Surface Mount Package
SOT-343/4-lead SC70
Pin Connections and
Package Marking
Typical Biasing Configuration
RFin
25x
GROUND
RF OUT/BIAS GROUND
Applications
• Cellular/PCS/WLL basestations
• Wireless data/WLAN
• Fiber-optic systems
• ISM
• General purpose gain block
amplifier
Note:
Top View. Package marking provides
orientation and identification. ‘x’ is a character
to identify date code.
C
block
C
block
C
bypass
R
c
VCC =
5
V
V
d
= 3.3 V
RFC
IN OUT
MSA
2
MSA-2543 Absolute Maximum Ratings[1]
Symbol Parameter Units Absolute Maximum
IdDevice Current mA 40
Pdiss Total Power Dissipation[2] mW 140
Pin max. RF Input Power dBm 13
TJmax Junction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
θjc Thermal Resistance[3] °C/W 139
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Ground lead temperature is 25°C. Derate
7.4 mW/°C for TL > 131°C.
3. Thermal resistance measured using 150°C
Liquid Crystal Measurement method.
Electrical Specifications
TA = +25°C, Id = 12 mA, ZO = 50Ω, RF parameters measured in a test circuit for a typical device
Symbol Parameter and Test Condition Frequency Units Min. Typ.[1] Max. σ
VdDevice Voltage V 2.9 3.3 3.8 0.02
GPPower Gain (|S21|2) 900 MHz dB 15 0.3
2 GHz 13 13.8 15 0.2
∆GPGain Flatness 0.1 to 2 GHz dB ±0.55
F3dB 3 dB Bandwidth GHz 3
VSWRin Input Voltage Standing Wave Ratio 0.1 to 2.5 GHz 2:1
VSWRout Output Voltage Standing Wave Ratio 0.1 to 6 GHz 1.7:1
NF 50Ω Noise Figure 900 MHz dB 4.5 0.14
2 GHz 4.5 0.11
P1dB Output Power at 1 dB Gain Compression 900 MHz dBm 0.4 0.1
2 GHz 0.2 0.1
OIP3Output Third Order Intercept Point 900 MHz dBm 13 0.4
2 GHz 13 0.4
DV/dT Device Voltage Temperature Coefficient mV/°C -3.4
Notes:
1. Typical value determined from a sample size of 500 parts from 6 wafers.
2. Standard deviation is based on 500 samples taken from 6 different wafers. Future wafers allocated to this product may have typical values
anywhere between the minimum and maximum specification limits.
Block diagram of 2 GHz production test board used for gain measurements. Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission Line
(0.5 dB loss) DUT
50 Ohm
Transmission Line
Including Bias T
(1.05 dB loss)
Output
3
MSA-2543 Typical Performance
V
d
(V)
Figure 1. Id vs. Vd and Temperature.
I
d
(mA)
-40°C
+25°C
+85°C
35
30
25
20
15
10
5
03 3.83.43.2 3.6
FREQUENCY (GHz)
Figure 2. NF vs. Frequency at Id = 12 mA.
NF (dB)
012
6.5
6.0
5.5
5.0
4.5
4.0 428106
FREQUENCY (GHz)
Figure 3. Gain vs. Frequency at Id = 12 mA.
GAIN (dB)
18
16
14
12
10
8
6
4
2
0012428106
FREQUENCY (GHz)
Figure 4. P1dB vs. Frequency at
Id = 12 mA.
P
1dB
012
2.0
0
-2.0
-4.0
-6.0
-8.0 428106
I
d
(mA)
Figure 5. Gain vs. Id and Temperature at 2 GHz.
GAIN (dB)
16.5
16.0
15.5
15.0
14.5
14.0
13.5
13.0
12.5
12.0 0350 10
520 25 3015
-40°C
+25°C
+85°C
I
d
(mA)
Figure 6. NF vs. Id vs. Temperature at 2 GHz.
NF (dB)
5.2
5.0
4.8
4.6
4.4
4.2
4.0
-40°C
+25°C
+85°C
0402010 30
I
d
(mA)
Figure 7. P1dB vs. Id and Temperature at 2 GHz.
P
1dB
(dBm)
-40°C
+25°C
+85°C
0402010 30
12
10
8
6
4
2
0
-2
-4
I
d
(mA)
Figure 8. NF vs. Id and Frequency.
NF (dBm)
0350 10
520 25 3015
7.0
6.5
6.0
5.5
5.0
4.5
4.0
0.9 GHz
1.9 GHz
0.1 GHz
5.8 GHz
2.4 GHz
8 GHz
7 GHz
10 GHz
9 GHz
I
d
(mA)
Figure 9. P1dB vs. Id and Frequency.
P
1dB
(dBm)
0350 10
520 25 3015
9 GHz
8 GHz
10 GHz
2.4 GHz
4 GHz
5.8 GHz
7 GHz
1.9 GHz
2 GHz
0.1 GHz
0.9 GHz
15
10
5
0
-5
-10
4
MSA-2543 Typical Performance, continued
I
d
(mA)
Figure 10. Gain vs. I
d
and Frequency.
GAIN (dB)
0402010 30
20
16
12
8
4
0
9 GHz
8 GHz
10 GHz
2.4 GHz
5.8 GHz
7 GHz
1.9 GHz
0.1 GHz
0.9 GHz
FREQUENCY (GHz)
Figure 11. Input Return Loss vs. Frequency
and Bias.
IRL (dB)
010
0
-10
-20
-30
-40 4286
12 mA
20 mA
30 mA
FREQUENCY (GHz)
Figure 12. Output Return Loss vs. Frequency
and Bias.
ORL (dB)
0104286
12 mA
20 mA
30 mA
0
-5
-10
-15
-20
-25
-30
MSA-2543 Typical Scattering Parameters
TA = 25°C, Id = 12 mA
Freq s11 s11 s21 s21 s21 s12 s12 s12 s22 s22 K
(GHz) Mag Ang (dB) (Mag) (Ang) (dB) (Mag) (Ang) (Mag) (Ang)
0.1 0.12 0.3 14.54 5.33 173.9 -19.60 0.105 -0.3 0.18 -1.3 1.15
0.5 0.18 11.4 14.78 5.48 160.2 -19.71 0.103 -2.6 0.19 -8.2 1.14
1.0 0.24 13.9 14.70 5.44 140.3 -19.70 0.104 -5.6 0.20 -12.1 1.12
1.5 0.27 5.2 14.25 5.16 121.9 -19.75 0.103 -8.1 0.21 -21.2 1.14
2.0 0.31 -1.6 13.69 4.83 108.2 -19.82 0.102 -9.5 0.22 -27.9 1.16
2.5 0.34 -15.4 13.04 4.49 97.1 -19.81 0.102 -12.4 0.22 -32.6 1.20
3.0 0.36 -23.9 12.48 4.21 85.0 -19.73 0.103 -14.4 0.22 -37.8 1.22
3.5 0.37 -34.3 11.77 3.88 71.1 -19.74 0.103 -17.4 0.23 -44.8 1.28
4.0 0.38 -45.1 11.11 3.59 58.3 -19.81 0.102 -20.7 0.23 -51.1 1.35
4.5 0.38 -54.0 10.63 3.40 48.0 -19.89 0.101 -23.4 0.23 -57.2 1.41
5.0 0.37 -65.1 10.04 3.18 35.7 -19.94 0.101 -26.5 0.22 -65.2 1.50
5.5 0.36 -74.1 9.64 3.04 26.1 -20.00 0.100 -29.1 0.22 -72.0 1.58
6.0 0.35 -84.8 9.21 2.89 14.6 -20.14 0.098 -31.2 0.20 -80.7 1.69
6.5 0.32 -96.3 8.78 2.75 3.1 -20.13 0.098 -32.8 0.18 -91.8 1.79
7.0 0.30 -106.4 8.42 2.64 -6.5 -20.07 0.099 -34.4 0.15 -100.5 1.88
7.5 0.26 -117.3 8.09 2.54 -17.4 -19.94 0.101 -36.4 0.13 -114.7 1.95
8.0 0.23 -129.4 7.81 2.46 -26.8 -19.76 0.103 -37.5 0.11 -130.7 2.00
8.5 0.19 -148.9 7.45 2.36 -38.4 -19.31 0.108 -39.2 0.09 -160.9 2.01
9.0 0.16 -170.2 7.12 2.27 -48.2 -18.85 0.114 -41.3 0.08 171.1 1.99
9.5 0.16 158.6 6.71 2.17 -59.9 -18.27 0.122 -43.5 0.10 140.8 1.95
10.0 0.17 128.0 6.28 2.06 -71.8 -17.58 0.132 -46.8 0.12 115.2 1.87
Notes:
1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the input lead.
The output reference plane is at the end of the output lead. The parameters include the effect of four plated through via holes connecting ground
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each ground lead contact point, one via on each side of that point.
5
MSA-2543 Typical Scattering Parameters
TA = 25°C, Id = 20 mA
Freq s11 s11 s21 s21 s21 s12 s12 s12 s22 s22 K
(GHz) Mag Ang (dB) (Mag) (Ang) (dB) (Mag) (Ang) (Mag) (Ang)
0.1 0.07 19.2 17.12 7.18 173.6 -20.47 0.095 -0.7 0.06 5.0 1.07
0.5 0.13 36.9 17.05 7.12 158.6 -20.52 0.094 -1.8 0.08 4.9 1.07
1.0 0.19 35.7 16.68 6.82 137.4 -20.44 0.095 -3.4 0.12 16.8 1.05
1.5 0.25 17.4 15.92 6.25 118.0 -20.29 0.097 -5.3 0.16 5.2 1.06
2.0 0.29 4.6 15.10 5.69 103.8 -20.21 0.098 -6.9 0.18 -5.1 1.08
2.5 0.33 -3.1 14.26 5.16 92.8 -20.08 0.099 -8.7 0.19 -12.7 1.11
3.0 0.35 -14.1 13.52 4.74 80.9 -20.01 0.100 -11.2 0.20 -20.0 1.14
3.5 0.37 -26.1 12.67 4.30 67.6 -19.97 0.100 -14.4 0.22 -29.2 1.20
4.0 0.37 -37.9 11.91 3.94 55.1 -19.92 0.101 -17.9 0.22 -37.3 1.26
4.5 0.37 -47.3 11.36 3.70 45.2 -19.99 0.100 -20.5 0.22 -45.0 1.33
5.0 0.37 -58.7 10.72 3.44 33.4 -19.99 0.100 -23.4 0.22 -53.8 1.41
5.5 0.36 -67.9 10.29 3.27 24.0 -20.04 0.100 -25.7 0.22 -61.2 1.49
6.0 0.34 -78.9 9.80 3.09 12.8 -20.12 0.099 -28.2 0.20 -70.4 1.59
6.5 0.32 -90.2 9.35 2.94 1.6 -20.04 0.100 -30.1 0.18 -81.2 1.68
7.0 0.29 -99.9 8.99 2.81 -7.7 -19.95 0.101 -31.4 0.15 -89.0 1.76
7.5 0.26 -110.5 8.65 2.71 -18.3 -19.75 0.103 -33.7 0.12 -101.9 1.82
8.0 0.23 -122.0 8.36 2.62 -27.6 -19.51 0.106 -34.8 0.10 -116.6 1.86
8.5 0.18 -140.8 7.99 2.51 -39.1 -19.00 0.112 -36.5 0.08 -146.8 1.86
9.0 0.15 -162.0 7.67 2.42 -48.8 -18.59 0.118 -38.9 0.06 179.8 1.85
9.5 0.14 164.6 7.26 2.31 -60.4 -17.92 0.127 -41.8 0.08 141.9 1.80
10.0 0.15 131.8 6.85 2.20 -72.1 -17.19 0.138 -45.7 0.11 111.7 1.72
Notes:
1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the and of the input lead.
The output reference plane is at the and of the output lead. The parameters include the effect of four plated through via holes connecting ground
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each ground lead contact point, one via on each side of that point.
MSA-2543 Typical Scattering Parameters
TA = 25°C, Id = 30 mA
Freq s11 s11 s21 s21 s21 s12 s12 s12 s22 s22 K
(GHz) Mag Ang (dB) (Mag) (Ang) (dB) (Mag) (Ang) (Mag) (Ang)
0.1 0.03 78.4 17.91 7.86 173.6 -20.96 0.090 -0.5 0.06 15.5 1.06
0.5 0.11 56.5 17.78 7.74 157.9 -20.89 0.090 -0.7 0.09 22.2 1.05
1.0 0.20 49.4 17.31 7.33 136.2 -20.67 0.093 -1.4 0.12 39.7 1.02
1.5 0.25 25.8 16.45 6.65 116.6 -20.47 0.095 -3.4 0.15 21.1 1.03
2.0 0.29 10.4 15.57 6.01 102.3 -20.30 0.097 -4.9 0.18 7.3 1.04
2.5 0.33 1.3 14.67 5.42 91.2 -20.16 0.098 -7.4 0.20 -2.6 1.07
3.0 0.35 -10.6 13.88 4.94 79.4 -20.03 0.100 -9.7 0.21 -11.6 1.10
3.5 0.37 -23.4 12.99 4.46 66.1 -20.02 0.100 -13.6 0.22 -22.5 1.16
4.0 0.37 -35.6 12.20 4.07 53.9 -19.96 0.100 -16.9 0.23 -31.5 1.22
4.5 0.37 -45.4 11.63 3.82 43.9 -19.98 0.100 -19.7 0.24 -39.6 1.28
5.0 0.36 -56.9 10.98 3.54 32.3 -19.94 0.101 -22.5 0.23 -49.1 1.37
5.5 0.36 -66.4 10.53 3.36 22.9 -20.08 0.099 -25.3 0.23 -57.2 1.45
6.0 0.34 -77.4 10.04 3.18 11.8 -20.09 0.099 -27.3 0.22 -66.4 1.54
6.5 0.31 -89.0 9.58 3.01 0.7 -20.13 0.099 -29 0.19 -77.3 1.65
7.0 0.29 -98.7 9.22 2.89 -8.7 -19.95 0.101 -30.8 0.17 -84.9 1.72
7.5 0.25 -109.5 8.88 2.78 -19.1 -19.71 0.103 -32.8 0.14 -96.8 1.77
8.0 0.22 -120.9 8.59 2.69 -28.3 -19.48 0.106 -34 0.11 -110.1 1.81
8.5 0.18 -139.9 8.21 2.57 -39.8 -18.98 0.112 -36 0.08 -137.4 1.82
9.0 0.15 -162.0 7.89 2.48 -49.4 -18.53 0.118 -38.1 0.07 -166.4 1.81
9.5 0.13 163.5 7.49 2.37 -61.1 -17.89 0.128 -41.3 0.07 151.7 1.76
10.0 0.15 129.7 7.09 2.26 -72.7 -17.19 0.138 -44.6 0.10 118.3 1.69
Notes:
1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the and of the input lead.
The output reference plane is at the and of the output lead. The parameters include the effect of four plated through via holes connecting ground
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each ground lead contact point, one via on each side of that point.
6
INPUT
GROUND
INSIDE Package
Port
G
Num=1
C
C2
C=0.1 pF
Port
S1
Num=2
GROUND
OUTPUT
Port
S2
Num=4
Port
D
Num=4
L
L8
L=0.2 nH
R=0.001
C
C3
C=0.11 pF
L
L5
L=0.6 nH
R=0.001
MSub
TLINP
TL12
Z=Z1 Ohm
L=15 mil
K=1
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL2
Z=Z1 Ohm
L=15 mil
K=1
A=0.000
F=1 GHz
TanD=0.001
VIA2
V5
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
VIA2
V1
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
TLINP
TL4
Z=Z2 Ohm
L=25 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL10
Z=Z2 Ohm
L=10.0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
VAR
VAR3
K=5
Z1=30
Z2=85
Var
Ean
TLINP
TL3
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL1
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL5
Z=Z1 Ohm
L=15.0 mil
K=1
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL9
Z=Z2/2 Ohm
L=5.0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL7
Z=Z2 Ohm
L=26.0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL8
Z=Z1 Ohm
L=15.0 mil
K=1
A=0.0000
F=1 GHz
TanD=0.001
VIA2
V2
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
VIA2
V5
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
L
L3
L=0.6 nH
R=0.001
L
L2
L=0.2 nH
R=0.001
die_MSA25
X1
MSUB
MSub2
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
Note:
Vias are not part of the package. They are only added
during simulation to account for the vias in the test fixture.
Port
P1
Num=1
Q1_MS A25
X1
Q2_MS A25
X2
Port
P3
Num=3
Port
P2
Num=2
R
R1
R=500 Ohm
R
R2
R=580 Ohm
R
R3
R=450 Ohm
R
R4
R=2.5 Ohm
MSA-2543 ADS Model
7
Q1 MSA-25 Transistor Model
Q2 MSA-25 Transistor Model
Port
P1
Num=1
Port
P1
Num=1
Port
P1
Num=1
R
RCX
R=12.292289 Ohm
TC1=0.113e-02
R
RBX
R=5.4559755 Ohm
TC1=0.14e-02
R
RE
R=3.14157382 Ohm
Diode
DIODEI
Model=DIODEMI
Mode=nonlinear
C
CCOX
C=0.010173664 pF
Diode_Model
DIODEMI
Is=7.81071283e-18
Rs=
N=1
Tt=
Cjo=1.35716e-14
Vj=0.729
M=0.44
Eg=
Fc=0.8
Tnom=21
Diode
DIODE3
Model=DIODEM3
Mode=nonlinear
Diode
DIODE2
Model=DIODEM2
Mode=nonlinear
BJT4_NPN
BJTl
Model=BJTMI
Area=
Mode=nonlinear
Diode_Model
DIODEM2
Is=1e-24
Rs=
N=1.0029
Tt=
Cjo=1.31257503e-14
Vj=0.8971
M=2.292e-1
Eg=
Fc=0.8
Tnom=21
Diode_Model
DIODEM3
Is=1e-24
Rs=2.63793e2
N=
Tt=
Cjo=6.60918e-14
Vj=0.6
M=0.42
Eg=
Fc=0.8
Tnom=21
BJT_Model
BJTMI
NPN=yes
PNP=no
Bf=le6
lkf=7.34322392e-02
lse=3.5215327e-20
Ne=1.006
Vaf=44
Nf=1
Tf=5.2703649e-12
Xtf=20
Vtf=0.8
Itf=0.113118088
Ptf=22
Xtb=0.7
Approxqb=yes
Br=1
kr=6e-3
Isc=
Nc=2
Var=3.37
Nr=1.005
Tr=4e-9
Eg=1.17
Is=2.22115249e-18
Imax=
Xti=3
Tnom=21
Nk=
Iss=
Ns=
Cjc=1.392204e-14
Vjc=0.6775
Mjc=0.3319
Xcjc=4.2587169e-1
Fc=0.8
Cje=3.724248e-14
Vje=0.9907
Mje=0.5063
Cjs=
Vjs=
Mjs=
Rb=1.836672e1
Irb=4.075817e-5
Rbm=0.1
RbModel=MDS
Re=
Rc=
Kf=6.666068e-23
Af=2
Kb=
Ab=
Fb=
Ffe=
Lateral=no
CEOX
C=3.33633479e-15F
R
RSE
R=1 Ohm
Port
P1
Num=1
Port
P1
Num=1
Port
P1
Num=1
R
RCX
R=3.18472237 Ohm
TC1=0.113e-02
R
RBX
R=0.699275278 Ohm
TC1=0.14e-02
R
RE
R=0.785393454 Ohm
Diode
DIODEI
Model=DIODEMI
Mode=nonlinear
C
CCOX
C=0.040694656pF
Diode_Model
DIODEMI
Is=3.12428513e-17
Rs=
N=1
Tt=
Cjo=5.42864e-14
Vj=0.729
M=0.440
Eg=
Fc=
Tnom=21
Diode
DIODE3
Model=DIODEM3
Mode-nonlinear
Diode
DIODE2
Model=DIODEM2
Mode=nonlinear
BJT4_NPN
BJTl
Model=BJTMI
Area=
Mode=nonlinear
Diode_Model
DIODEM2
Is=1e-24
Rs=
N=1.0029
Tt=
Cjo=5.25030011e-14
Vj=0.8971
M=2.292e-1
Eg=
Fc=0.8
Tnom=21
Diode_Model
DIODEM3
Is=1e-24
Rs=1.8288818e2
N=
Tt=
Cjo=1.7194806e-13
Vj=0.6
M=0.42
Eg=
Fc=0.8
Tnom=21
BJT_Model
BJTMI
NPN=yes
PNP=no
Bf=le6
lkf=2.93728957e-01
lse=1.408613e-19
Ne=1.006
Vaf=44
Nf=1
Tf=5.2703649e-12
Xtf=20
Vtf=0.8
Itf=0.45272352
Ptf=22
Xtb=0.7
Approxqb=yes
Br=1
kr=2.4e-02
Isc=
Nc=2
Var=3.37
Nr=1.005
Tr=4e-9
Eg=1.17
Is=8.088460996e-18
Imax=
Xti=3
Tnom=21
Nk=
Iss=
Ns=
Cjc=5.568816e-14
Vjc=0.6775
Mjc=0.3319
Xcjc=4.2587169e-1
Fc=0.8
Cje=1.489699e-13
Vje=0.9907
Mje=0.5063
Cjs=
Vjs=
Mjs=
Rb=4.59167994
Irb=1.6303268e-4
Rbm=2.5e-02
RbModel=MDS
Re=
Rc=
Kf=4.16629284e-24
Af=2
Kb=
Ab=
Fb=
Ffe=
Lateral=no
CEOX
C=1.3345339e-14F
R
RSE
R=1 Ohm
8
MSA-2543 RFIC Amplifier
Description
Agilent Technologies’ MSA-2543 is
a low current silicon gain block
RFIC amplifier housed in a 4-lead
SC-70 (SOT-343) surface mount
plastic package. Providing a
nominal 14 dB gain at up to
+8 dBm Pout, this device is ideal
for small-signal gain stages or IF
amplification. The Darlington
feedback structure provides
inherent broad bandwidth perfor-
mance. The 25 GHz ft fabrication
process results in a device with
low current draw and useful
operation above 3 GHz.
A feature of the MSA-2543 is its
broad bandwidth that is useful in
many satellite-based TV, cable TV
and datacom systems.
In addition to use in buffer and
driver amplifier applications in the
TV market, the MSA-2543 will find
many applications in wireless
communication systems.
Application Guidelines
The MSA-2543 is very easy to use.
For most applications, all that is
required to operate the MSA-2543
is to apply 12 mA to 30 mA to the
RF Output pin.
RF Input and Output
The RF Input and Output ports of
the MSA-2543 are closely matched
to 50Ω.
DC Bias
The MSA-2543 is a current-biased
device that operates from a 12 mA
to 30 mA current source. Curves
of typical performance as a
function of bias current are shown
in section one of the data sheet.
Figure 1 shows a typical imple-
mentation of the MSA-2543. The
supply current for the MSA-2543
must be applied to the RF Output
pin. The power supply connection
to the RF Output pin is achieved
by means of a RF choke (induc-
tor). The value of the RF choke
must be large relative to 50Ω in
order to prevent loading of the RF
Output. The supply voltage end of
the RF choke is bypassed to
ground with a capacitor. Blocking
capacitors are normally placed in
series with the RF Input and the
RF Output to isolate the DC
voltages on these pins from
circuits adjacent to the amplifier.
The values for the blocking and
bypass capacitors are selected to
provide a reactance at the lowest
frequency of operation that is
small relative to 50Ω.
RFC
V
d
C2
C3
Vcc
25x
C1 Rc
Figure 1. Schematic Diagram with Bias
Connections.
PCB Layout
A recommended PCB pad layout
for the miniature SOT-343 (SC-70)
package that is used by the
MSA-2543 is shown in Figure 2.
1.30
0.051
0.50
0.020
.080
0.031
1.15
0.045
1.71
0.067
0.80
0.031
Figure 2. PCB Pad Layout for MSA-2543.
Package dimensions in mm/inches.
This layout provides ample
allowance for package placement
by automated assembly equipment
without adding parasitics that
could impair the high frequency
RF performance of the MSA-2543.
The layout is shown with a
footprint of a SOT-343 package
superimposed on the PCB pads for
reference.
Starting with the package pad
layout in Figure 3, an RF layout
similar to the one shown in
Figure 3 is a good starting point
for microstripline designs using
the MSA-2543 amplifier.
PCB Materials
FR-4 or G-10 type materials are
good choices for most low cost
wireless applications using single
or multi-layer printed circuit
boards. Typical single-layer board
thickness is 0.020 to 0.031 inches.
Circuit boards thicker than 0.031
inches are not recommended due
to excessive inductance in the
ground vias. This is discussed in
more detail in the section on RF
grounding.
Applications Example
The printed circuit layout in
Figure 3 is a multi-purpose layout
that will accommodate compo-
nents for using the MSA-2543 for
RF inputs from DC through 3 GHz.
This layout is a microstripline
design (solid groundplane on the
backside of the circuit board) with
50Ω interfaces for the RF input
and output. The circuit is fabri-
cated on 0.031-inch thick FR-4
dielectric material. Plated through
holes (vias) are used to bring the
ground to the top side of the
circuit where needed. Multiple
vias are used to reduce the
inductance of the paths to ground.
9
IN OUT
Vcc
MSA-2X43 IP 4/00
Agilent Technologies
Figure 3. Multi-purpose Evaluation Board.
The amplifier and related compo-
nents are assembled onto the
printed circuit board as shown in
Figure 6. The MSA-2X43 circuit
board is designed to use edge-
mounting SMA connectors such as
Johnson Components, Inc., Model
142-0701-881. These connectors
are designed to slip over the edge
of 0.031-inch thick circuit boards
and obviate the need to mount
PCBs on a metal base plate for
testing. The center conductors of
the connectors are soldered to the
input and output microstrip lines.
The ground pins are soldered to
the ground plane on the back of
the board and to the top ground
pads.
DC blocking capacitors are
required at the input and output of
the IC. The values of the blocking
capacitors are determined by the
lowest frequency of operation for
a particular application. The
capacitor’s reactance is chosen to
be 10% or less of the amplifier’s
input or output impedance at the
lowest operating frequency. For
example, an amplifier to be used
in an application covering the
900 MHz band would require an
input blocking capacitor of at least
39 pF, which is 4.5Ω of reactance
at 900 MHz. The Vcc connection to
the amplifier must be RF bypassed
by placing a capacitor to ground at
the bias pad of the board. Like the
DC blocking capacitors, the value
of the Vcc bypass capacitor is
determined by the lowest operat-
ing frequency for the amplifier.
Space is available on the circuit
board to add a bias choke, bypass
capacitors, and collector resistors.
The MSA series of ICs requires a
bias resistor to ensure thermal
stability. The bias resistor value is
calculated from the operating
current value, device voltage and
the supply voltage; see equation
below. When applying bias to the
board, start at a low voltage level
and slowly increase the voltage
until the recommended current is
reached. Both power and gain can
be adjusted by varying Id.
Rc = Vcc – Vd
Ω
Id
Where:
Vcc = The power supply voltage
applied to Rc (volts)
Vd = The device voltage (volts)
Id = The quiescent bias current
drawn by the device
Notes on Rc Selection
The value of Rc is dependant on
Vd, any production variation in Vd
will have an effect on Id. As the
gain and power performance of
the MSA-2543 may be adjusted by
varying Id this will have to be
taken into account. The character-
ization data in section one shows
the relationship between Vd and Id
over temperature. At lower
temperatures the value of Vd
increases. The increase in Vd at
low temperatures and production
variations may cause potential
problems for the amplifier perfor-
mance if it is not taken into
account. One solution would be to
increase the voltage supply to
have at least a 4V drop across the
bias resistor Rc. This will guaran-
tee good temperature stability
over temperature. Table 1 shows
the effects of Rc on the perfor-
mance of the MSA-2543 over
temperature.
An alternative solution would be
to use an active bias circuit
described shown in Figure 4. The
resitors R1 and R2 form a poten-
tial diver circuit to set the base
voltage of the PNP transistor,
typical values for these resistors
are in the order of 5 KΩ. The value
of Rc is approximated by assum-
ing a 1V drop across it, see
equation below. The value of the
RF choke should be large com-
pared to 50Ω, typical value for a
1.9 GHz amplifier would be 22 nH.
The DC blocking capacitors are
calculated as described above. A
typical value for C3 would be
1.0 µF.
Rc = 1 Ω
Id
Table 1. Effects of Rc on Performance over Temperature.
Operating voltage = 3.3V nominally.
Voltage Resistor Temperature, Bias Current, Power Gain @
Drop, volts Value, Ohms °C mA 2.0 GHz, dB
0 0 0 6.3 9.1
25 12.0 13.5
85 28.4 14.3
1.7 150 0 11.3 13.7
25 12.0 13.5
85 13.5 13.1
4.0 330 0 11.8 13.7
25 12.0 13.5
85 12.8 12.8
6.7 510 0 11.8 13.6
25 12.0 13.5
85 12.5 12.8
10
The active bias solution will only
require about a 1.3V difference
between Vcc and Vd for good bias
stability over temperature. For
more details on the active bias
circuit please refer to application
note AN-A003 Biasing MODAMP
MMICs.
RFC
V
d
C2
C3 Vcc
25x
C1 Rc
R2R1
Figure 4. Active Bias Circuit.
1.9 GHz Design
To illustrate the simplicity of using
the MSA-2543, a 1.9 GHz amplifier
for PCS type applications is
presented. The amplifier uses a 5V,
12 mA supply. The input and
output of the MSA-2543 is already
well matched to 50Ω and no
additional matching is needed.
RFC=
22 nH
C2=18 pF
C3=330 pF
Vcc=5V
25x
C1=18 pf Rc=150Ω
Figure 5. Schematic of 1.9 GHz Circuit.
A schematic diagram of the
complete 1.9 GHz circuit with DC
biasing is shown in Figure 5. DC
bias is applied to the MSA-2543
through the RFC at the RF Output
pin. The power supply connection
is bypassed to ground with
capacitor C3. Provision is made
for an additional bypass capacitor,
C4, to be added to the bias line
near the +5 volt connection. C4
will not normally be needed unless
several stages are cascaded using
a common power supply.
The input terminal of the
MSA-2543 is not at ground
potential, an input DC blocking
capacitor is needed.
The values of the DC blocking and
RF bypass capacitors should be
chosen to provide a small reac-
tance (typically < 5 ohms) at the
lowest operating frequency. For
this 1.9 GHz design example,
18 pF capacitors with a reactance
of 4.5 ohms are adequate. The
reactance of the RF choke (RFC)
should be high (i.e., several
hundred ohms) at the lowest
frequency of operation. A 22 nH
inductor with a reactance of
262 ohms at 1.9 GHz is sufficiently
high to minimize the loss from
circuit loading.
Table 2. Component Parts List for the
MSA-2543 Amplifier at 1.9 GHz.
R1 150Ω chip resistor
RFC 22 nH LL1608-FH22N
C1,C2 18 pF chip capacitor
C3 330 pF chip capacitor
The completed 1.9 GHz amplifier
for this example with all compo-
nents and SMA connectors
assembled is shown in Figure 6.
IN OUT
Vcc
MSA-2X43 IP 4/00
Agilent Technologies
25x
Figure 6. Complete 1.9 GHz Amplifier.
Performance of MSA-2543 1.9 GHz
Amplifier
The amplifier is biased at a Vcc of
5 volts, Id of 12 mA. The measured
gain, noise figure, input and
output return loss of the com-
pleted amplifier is shown in
Figures 7. Noise figure is a nomi-
nal 4.5 to 4.7 dB from 1800
through 2000 MHz. Gain is a
minimum of 13.2 dB from
1800 MHz through 2000 MHz. The
amplifier output intercept point
(OIP3) was measured at a nominal
+11.5 dBm. P-1dB measured
+1.5 dBm.
FREQUENCY (GHz)
GAIN, NOISE FIGURE, INPUT and
OUTPUT RETURN LOSS (dB)
1.6 2.62
Output RL
Input RL
Noise
Gain
1.8 2.42.2
16
8
0
-8
-16
-24
Figure 7. Gain, Noise Figure, Input and Output
Return Loss Results.
11
900 MHz Design
The 900 MHz example follows the
same design approach that was
described in the previous
1900 MHz design. A schematic
diagram of the complete 900 MHz
circuit is shown in Figure 8. And
the component part list is show in
Table 3.
RFC=
47 nH
C2=39 pF
C3=680 pF
Vcc=5V
25x
C1=39 pF Rc=56Ω
Figure 8. Schematic of 900 MHz Circuit.
Table 3. Component Parts List for the
MSA-2543 Amplifier at 900 MHz.
R1 56Ω chip resistor
RFC 47 nH LL1608-FH47N
C1,C2 39pF chip capacitor
C3 680 pF chip capacitor
Performance of MSA-2543
900 MHz Amplifier
The amplifier is biased at a Vcc of
5 volts, Id of 30 mA. The measured
gain, noise figure, input and
output return loss of the com-
pleted amplifier is shown in
Figure 9. Noise figure is a nominal
4.5 to 4.7 dB from 800 through
1000 MHz. Gain is a minimum of
16.5 dB from 800 MHz through
1000 MHz. The input return loss at
900 MHz is 14.5 dB with a corre-
sponding output return loss of
15.5 dB. The amplifier output
intercept point (OIP3) was
measured at a nominal +23.5 dBm.
P-1dB measured +11.2 dBm.
FREQUENCY (GHz)
GAIN, NOISE FIGURE,INPUT and
OUTPUT RETURN LOSS (dB)
0.4 1.40.80.6 1.21.0
18
12
6
0
-6
-12
-18
-24
Output RL
Input RL
Noise
Gain
Figure 9. Gain, Noise Figure, Input and Output
Return Loss Results.
Designs for Other Frequencies
The same basic design approach
described above for 1.9 GHz can
be applied to other frequency
bands. Inductor values for match-
ing the input for low noise figure
are shown in Table 4.
Table 4. Input and Output Inductor Values for
Various Operating Frequencies.
Frequency C1 & C2, pF RFC, nH C3, pF
400 MHz 88 100 1500
900 MHz 39 47 680
1900 MHz 18 22 330
2.4 GHz 15 18 270
3.5 GHz 18 15 22
5.8 GHz 1.8 6.8 10
Actual component values may
differ slightly from those shown in
Table 3 due to variations in circuit
layout, grounding, and component
parasitics. A CAD program such as
Agilent Technologies’ ADS® is
recommended to fully analyze and
account for these circuit variables.
Notes on RF Grounding
The performance of the MSA
series is sensitive to ground path
inductance. Good grounding is
critical when using the MSA-2543.
The use of via holes or equivalent
minimal path ground returns as
close to the package edge as is
practical is recommended to
assure good RF grounding.
Multiple vias are used on the
evaluation board to reduce the
inductance of the path to ground.
The effects of the poor grounding
may be observed as a “peaking” in
the gain versus frequency
response, an increase in input
VSWR, or even as return gain at
the input of the RFIC.
A Final Note on Performance
Actual performance of the MSA
RFIC mounted on the demonstra-
tion board may not exactly match
data sheet specifications. The
board material, passive compo-
nents, and connectors all intro-
duce losses and parasitics that
may degrade device performance,
especially at higher frequencies.
Some variation in measured
results is also to be expected as a
result of the normal manufactur-
ing distribution of products.
Statistical Parameters
Several categories of parameters
appear within this data sheet.
Parameters may be described with
values that are either “minimum or
maximum,” “typical,” or “standard
deviations.”
12
The values for parameters are
based on comprehensive product
characterization data, in which
automated measurements are
made on of a minimum of 500
parts taken from six non-consecu-
tive process lots of semiconductor
wafers. The data derived from
product characterization tends to
be normally distributed, e.g., fits
the standard bell curve.
Parameters considered to be the
most important to system perfor-
mance are bounded by minimum
or maximum values. For the
MSA-2543, these parameters are:
Gain (Gtest) and Device Voltage
(Vd). Each of the guaranteed
parameters is 100% tested as part
of the manufacturing process.
Values for most of the parameters
in the table of Electrical Specifica-
tions that are described by typical
data are the mathematical mean
(µ), of the normal distribution
taken from the characterization
data. For parameters where
measurements or mathematical
averaging may not be practical,
such as S-parameters or Noise
Parameters and the performance
curves, the data represents a
nominal part taken from the
center of the characterization
distribution. Typical values are
intended to be used as a basis for
electrical design.
To assist designers in optimizing
not only the immediate amplifier
circuit using the MSA-2543, but to
also evaluate and optimize trade-
offs that affect a complete wire-
less system, the standard devia-
tion (σ) is provided for many of
the Electrical Specifications
parameters (at 25°C) in addition
to the mean. The standard devia-
tion is a measure of the variability
about the mean. It will be recalled
that a normal distribution is
completely described by the mean
and standard deviation.
Standard statistics tables or
calculations provide the probabil-
ity of a parameter falling between
any two values, usually symmetri-
cally located about the mean.
Referring to Figure 10 for ex-
ample, the probability of a param-
eter being between ±1σ is 68.3%;
between ±2σ is 95.4%; and be-
tween ±3σ is 99.7%.
68%
95%
99%
Parameter Value
Mean
(µ), typ
-3σ-2σ-1σ+1σ+2σ+3σ
Figure 10. Normal Distribution.
Phase Reference Planes
The positions of the reference
planes used to specify S-param-
eters for the MSA-2543 are shown
in Figure 11. As seen in the
illustration, the reference planes
are located at the point where the
package leads contact the test
circuit for the RF input and RF
output/bias. As noted under the
s-parameter table in section one of
the data sheet the MSA-2543 was
tested in a fixture that includes
plated through holes through a
0.025" thickness printed circuit
board. Due to the complexity of
de-embedding these grounds, the
S-parameters include the effects
of the test fixture grounds.
Therefore, when simulating the
performance of the MSA-2543 the
added ground path inductance
should be taken into account. For
example if you were designing an
amplifier on 0.031" thickness
printed circuit board material,
only the difference in the printed
circuit board thickness needs to
be included in the simulation, i.e.
0.031" – 0.025" =0.006".
TEST FIXTURE
Input
Reference
Plane
Test Fixture
Vias Output
Reference
Plane
Test Fixture
Vias
25x
Figure 11. Phase Reference Planes.
SMT Assembly
Reliable assembly of surface
mount components is a complex
process that involves many
material, process, and equipment
factors, including: method of
heating (e.g., IR or vapor phase
reflow, wave soldering, etc.)
circuit board material, conductor
thickness and pattern, type of
solder alloy, and the thermal
conductivity and thermal mass of
components. Components with a
low mass, such as the SOT-343
package, will reach solder reflow
temperatures faster than those
with a greater mass.
The MSA-2543 is qualified to the
time-temperature profile shown in
Figure 12. This profile is represen-
tative of an IR reflow type of
surface mount assembly process.
After ramping up from room
temperature, the circuit board
with components attached to it
(held in place with solder paste)
passes through one or more
preheat zones. The preheat zones
increase the temperature of the
board and components to prevent
thermal shock and begin evaporat-
ing solvents from the solder paste.
The reflow zone briefly elevates
the temperature sufficiently to
produce a reflow of the solder.
The rates of change of tempera-
ture for the ramp-up and cool-
down zones are chosen to be low
enough to not cause deformation
13
of the board or damage to compo-
nents due to thermal shock. The
maximum temperature in the
reflow zone (TMAX) should not
exceed 235°C.
These parameters are typical for a
surface mount assembly process
for the MSA-2543. As a general
guideline, the circuit board and
components should be exposed
only to the minimum temperatures
and times necessary to achieve a
uniform reflow of solder.
Electrostatic Sensitivity
RFICs are electrostatic
discharge (ESD) sensi-
tive devices. Although
the MSA-2543 is robust in design,
permanent damage may occur to
these devices if they are subjected
to high energy electrostatic
discharges. Electrostatic charges
as high as several thousand volts
(which readily accumulate on the
human body and on test equip-
ment) can discharge without
detection and may result in
degradation in performance,
reliability, or failure.
Electronic devices may be sub-
jected to ESD damage in any of
the following areas:
• Storage & handling
• Inspection & testing
• Assembly
• In-circuit use
The MSA-2543 is a ESD Class 1
device. Therefore, proper ESD
precautions are recommended
when handling, inspecting, testing,
assembling, and using these
devices to avoid damage.
References
Performance data for MSA series
of amplifiers are found in the
CD ROM Catalog or http://
www.agilent.com/view/rf
Figure 12. Surface Mount Assembly Profile.
Application Notes
AN-S001: Basic MODAMP MMIC
Circuit Techniques
AN-S002: MODAMP MMIC
Nomenclature
AN-S003: Biasing MODAMP
MMICs
AN-S011: Using Silicon MMIC Gain
Blocks as Transimpedance
Amplifiers
AN-S012: MagIC Low Noise
Amplifiers
TIME (seconds)
TMAX
TEMPERATURE (°C)
0
0
50
100
150
200
250
60
Preheat
Zone Cool Down
Zone
Reflow
Zone
120 180 240 300
14
E
D
A
A1
b TYP
e
E1
1.30 (0.051)
BSC
1.15 (.045) BSC
θ
h
C TYP
L
DIMENSIONS ARE IN MILLIMETERS (INCHES)
DIMENSIONS
MIN.
0.80 (0.031)
0 (0)
0.25 (0.010)
0.10 (0.004)
1.90 (0.075)
2.00 (0.079)
0.55 (0.022)
0.450 TYP (0.018)
1.15 (0.045)
0.10 (0.004)
0
MAX.
1.00 (0.039)
0.10 (0.004)
0.35 (0.014)
0.20 (0.008)
2.10 (0.083)
2.20 (0.087)
0.65 (0.025)
1.35 (0.053)
0.35 (0.014)
10
SYMBOL
A
A1
b
C
D
E
e
h
E1
L
θ
1.15 (.045) REF
1.30 (.051) REF
1.30 (.051)2.60 (.102)
0.55 (.021) TYP 0.85 (.033)
Package Dimensions
Outline 43
SOT-343 (SC70 4-lead)
Ordering Information
Part Number No. of Devices Container
MSA-2543-TR1 3000 7” Reel
MSA-2543-TR2 10000 13”Reel
MSA-2543-BLK 100 antistatic bag
15
USER
FEED
DIRECTION COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
P
P
0
P
2
FW
C
D
1
D
E
A
0
8° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
5° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS W
t
1
8.00 ± 0.30
0.255 ± 0.013 0.315 ± 0.012
0.010 ± 0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS C
T
t
5.4 ± 0.10
0.062 ± 0.001 0.205 ± 0.004
0.0025 ± 0.00004
COVER TAPE
Device Orientation
Tape Dimensions
For Outline 4T
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2000 Agilent Technologies, Inc.
5980-1087E (10/00)
