○Product structure : Silicon monolithic integrated circuit. ○This product has no designed protection against radioactive rays.
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© 2014 ROHM Co., Ltd. All rights reserved.
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TSZ22111・14・001
TSZ02201-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
Power Management IC for Cell phone・Smart Phone
Power Management IC for Near Field
Communication LSI
BD7602GUL
Summary
BD7602GUL is a Power Management IC for mobile
device with NFC IC.
Each LDO output is controlled by 2 line serial interface
which supports I2C Bus protocol.
This helps to save space to integrate all PMIC for NFC
IC.
Features
Low current consumption 10µA (Typ)
2 Channel LDO
2.7V UVLO detection
1 Channel GPO
Thermal Shut Down function
2 line serial interface which supports I2C bus
protocol.
USE
Smart Phones
Cell Phones
Mobile device which has NFC IC
Key Parameters
Input voltage range ： 2.7V ～ 5.5V
Output voltage(LDO1)： 3.0V(Typ)
Output voltage range(LDO2)： 2.8V ～ 3.3V
Output current(LDO1)： 100mA(Max)
Output current(LDO2)： 150mA(Max)
VBAT operating current： 10μA (Typ)
Operating temperature range： -35°C ～ +85°C
PACKAGE W (Typ) x D (Typ) x H (Max)
VCSP50L1C 1.60mm x 1.60mm x 0.57mm
VCSP50L1C
Application Schematic
DPREF
Voltage
Detect
(2.7V)
LDO1
3.0V
100mA
VREF
(IC Internal
Power）
LDO2
2.8V～3.3V
150mA
I2C
SLAVE
REGISTER
GPO
TSD
VBAT
SCL
SDA
DVDD
GPO
REFC
VOUT2
VOUT1
GND
0.1μF
1μF
DVDD
2.2KΩ2.2KΩ
4.7uF
4.7uF
Figure 1. Application schematic.
Datashee
t
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25.Feb.2014 Rev.001
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TSZ22111・15・001
BD7602GUL
Pinout Diagram
Figure 2. Pinout Diagram
Pin Descriptions
Terminal
Number
Name
Function
Diode
+side
-side
SiA1
VOUT1
LDO1 OUTPUT
VBAT
GND
A2
VBAT
POWER Supply
-
GND
A3
VOUT2
LDO2 OUTPUT
VBAT
GND
B1
GND
Ground
VBAT
-
B2
GPO
GPO OUTPUT
-
GND
B3
DVDD
I2C Serial Interface I/O Power supply
-
GND
C1
REFC
Power for logic circuit.
VBAT
GND
C2
SCL
I2C serial interface CLK input
DVDD
GND
C3
SDA
I2C serial interface DATA inout
DVDD
GND
IC Block Diagram
DPREF
Voltage
Detect
(2.7V)
LDO1
3.0V
100mA
VREF
(IC Internal
Power）
LDO2
2.8V～3.3V
150mA
I2C
SLAVE
REGISTER
GPO
TSD
VBAT
SCL
SDA
DVDD
GPO
REFC
VOUT2
VOUT1
GND
Figure 3. Block Diagram
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TSZ22111・15・001
BD7602GUL
Block Explanation
The output voltage for LDO1 is 3V (Typ) with an output current capability of 100mA (Max). UVLO Function is released when
the IC starts by turning the power ON (VBAT).
LDO1 turns OFF when UVLO function is enabled.
I2C controller can also be used to turn off the IC. When LDO1 turns off, VOUT1 automatically connects with 100Ω
discharge resistance.
VOUT1 needs 4.7uF external capacitor.
LDO2 has an adjustable output voltage from 2.8V to 3.3V.The initial value is 3V (Typ) with an output current capability of
150mA (Max). UVLO Function is released when the IC starts by turning the power ON (VBAT).
LDO2 turns OFF when UVLO function is enabled.
I2C Controller is used to adjust output voltage from 2.8V to 3.3V (8steps). It is also used to turn off the IC.
When LDO2 turns off, VOUT2 automatically connects with 100Ω discharge resistance.
VOUT2 needs 4.7uF external capacitor.
GPO is a logic output pin from register and could be used as enable or disable signal. The register can also set its output to
CMOS type or NMOS type with an output current capability of 3mA.
Initial condition of GPO is disabled or in HI-Z state.
Maximum pull up voltage during NMOS output is equal to VBAT
I2C SLAVE REGISTER is the function for I2C serial interface. Input voltage level is DVDD.
Voltage Detect for VBAT UVLO is 2.7V (Typ). When UVLO is detected, registers are reset.
Also at this time VREF, LDO1 and LDO2 outputs turn off.
VREF is equal to 2.5V (Typ). It powers the internal circuit and cannot be used externally. UVLO Function is released when
the IC starts by turning power ON (VBAT). When UVLO function is detected, IC turns off.
REFC needs 0.1uF external capacitor.
DPREF is reference voltage for LDO VREF and Voltage Detect.
TSD is for thermal shut down function. This prevents damaging and breaking of IC. When IC„s internal temperature rise up
to a certain temperature, LDO1 and LDO2 are automatically turned off. When temperature goes down, LDO1 and LDO2
automatically return to its normal operation.
In this case, register doesn‟t need to be reset.
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25.Feb.2014 Rev.001
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TSZ22111・15・001
BD7602GUL
Absolute Maximum Rating(s) (Ta = 25°C)
Parameter
Symbol
Value
Unit
Power Supply (VBAT)
VINVBAT
-0.3 ～ +7.0
V
Power Supply (DVDD)
VINDVDD
-0.3 ～ +7.0
V
Power Dissipation
Pd
0.66 (Note 1)
W
Operating Temperature Range
Topr
-35 ～ +85
°C
Storage Temperature
Tstg
-55 ～+150
°C
Junction Temperature
Tjmax
150
°C
Other Pin Voltage
VOTH
-0.3 ～ +7.0
V
(Note 1) Derate by 5.2mW/℃when operating above Ta=25℃. (Mounted on a ROHM specification board.50mm x 58mm)
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Recommended Operating Condition (Ta= -35°C to +85°C)
Parameter
Symbol
MIN
TYP
MAC
UNIT
Power Supply(VBAT)
VBAT
2.7
3.6
5.5
V
Power Supply(DVDD)
VDVDD
1.70
1.80
3.50
V
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25.Feb.2014 Rev.001
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TSZ22111・15・001
BD7602GUL
Electrical Characteristic (Unless otherwise specified, VBAT=3.6V, VDVDD=1.8V, Ta=25°C)
Parameter
Symbol
MIN
TYP
MAX
UNIT
Condition
Circuit Current
VBAT Circuit Current(VBAT=3.6V)
ICCBAT
-
10
18
µA
LDO1,2: No Load
VBAT Circuit Current(VBAT=3.1V)
ICCBAT
9.5
15
µA
LDO1,2: No Load
DVDD Circuit Current
ICCDVDD
-
0
1
µA
Voltage Detector
Detect Voltage
VUVLO
2.64
2.70
2.76
V
Down Sweep
Detect Voltage Hysteresis
VUVLOHYS
50
100
150
mV
VREF Output Voltage
VOREF
2.45
2.50
2.55
V
LDO1
Output Voltage
VOUT1
2.94
3.00
3.06
V
IOUT1= 50mA
Output Max Current
IOUT1MAX
100
-
-
mA
Line Regulation
ΔVIS1
-
2
-
mV
VBAT=3.3～4.5V, IOUT1= 50mA
Load Regulation
ΔVLS1
-
20
-
mV
IOUT1= 1～100mA
PSRR
PSRR1
-
45
-
dB
VBAT=4.2V+0.2Vpp,
IOUT1= 50mA
fr=120Hz,BW=20～20kHz
Discharge Resistance
RDIS1
-
100
-
Ω
VBAT=2.5V
LDO2
Output Voltage
VOUT2
2.94
3.00
3.06
V
IOUT1= 50mA
Variable Output Voltage
VO2RNG
2.80
-
3.30
V
Output Max Current
IOUT2MAX
150
-
-
mA
Line Regulation
ΔVIS2
-
2
-
mV
VBAT=VOUT2+0.3V～4.5V,
IOUT2= 50mA
Load Regulation
ΔVLS2
-
20
-
mV
IOUT2= 1～150mA
PSRR
PSRR2
-
45
-
dB
VBAT=4.2V+0.2Vpp,
IOUT2= 50mA
fr=120Hz,BW=20～20kHz
Discharge resistance
RDIS2
-
100
-
Ω
VBAT=2.5V
GPO
Output H Level
VOHGPO
0.8×
VOUT1
-
0.3+
VOUT1
V
ISINKGPO= 3mA
Output L Level
VOLGPO
-0.3
-
0.4
V
ISOURCEGPO= 3mA
NMOS output pulled up max voltage
VMXGPON
-
-
VBAT
V
NMOS output L level
VOLGPON
-0.3
-
0.4
V
ISOURCEGPO= 3mA
NMOS output leak current
ILKGPON
-1
0
1
µA
Terminal voltage=VOUT1, 0V
I2Cserial interface
Input H Level (SCL, SDA)
VIH
0.75×
VDVDD
-
0.3+
VDVDD
V
Input L Level (SCL, SDA)
VIL
-0.3
-
0.25×
VDVDD
V
Input Leak Current (SCL, SDA)
ILK
-1
0
1
µA
Terminal voltage=VDVDD, 0V
Output L Level (SDA)
VOL
-0.3
-
0.4
V
ISOURCE= 6mA
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TSZ22111・15・001
BD7602GUL
Electrical Characteristic (Unless otherwise specified, VBAT=3.6V, VDVDD=1.8V, Ta=-35～85°C( Note2))
Parameter
Symbol
MIN
TYP
MAX
UNIT
Condition
Circuit Current
VBAT Circuit Current(VBAT=3.6V)
ICCBAT
-
10
18
µA
LDO1,2: No Load
VBAT Circuit Current(VBAT=3.1V)
ICCBAT
-
9.5
15
µA
LDO1,2: No Load
DVDD Circuit Current
ICCDVDD
-
0
1
µA
Voltage Detector
Detect Voltage
VUVLO
2.6
2.7
2.8
V
Down Sweep
Detect Voltage Hysteresis
VUVLOHYS
50
100
150
mV
VREF Output Voltage
VOREF
2.4
2.5
2.6
V
LDO1
Output Voltage
VOUT1
2.88
3
3.12
V
IOUT1= 50mA
Output Max Current
IOUT1MAX
100
-
-
mA
Line Regulation
ΔVIS1
-
2
-
mV
VBAT=3.3～4.5V, IOUT1= 50mA
Load Regulation
ΔVLS1
-
20
-
mV
IOUT1= 1～100mA
PSRR
PSRR1
-
45
-
dB
VBAT=4.2V+0.2Vpp,
IOUT1= 50mA
fr=120Hz,BW=20～20kHz
Discharge Resistance
RDIS1
-
100
-
Ω
VBAT=2.5V
LDO2
Output Voltage
VOUT2
2.88
3
3.12
V
IOUT1= 50mA
Variable Output Voltage
VO2RNG
2.8
-
3.3
V
Output Max Current
IOUT2MAX
150
-
-
mA
Line Regulation
ΔVIS2
-
2
-
mV
VBAT=VOUT2+0.3V～4.5V,
IOUT2= 50mA
Load Regulation
ΔVLS2
-
20
-
mV
IOUT2= 1～150mA
PSRR
PSRR2
-
45
-
dB
VBAT=4.2V+0.2Vpp,
IOUT2= 50mA
fr=120Hz,BW=20～20kHz
Discharge resistance
RDIS2
-
100
-
Ω
VBAT=2.5V
GPO
Output H Level
VOHGPO
0.8×
VOUT1
-
0.3+
VOUT1
V
ISINKGPO= 3mA
Output L Level
VOLGPO
-0.3
-
0.4
V
ISOURCEGPO= 3mA
NMOS output pulled up max voltage
VMXGPON
-
-
VBAT
V
NMOS output L level
VOLGPON
-0.3
-
0.4
V
ISOURCEGPO= 3mA
NMOS output leak current
ILKGPON
-1
0
1
µA
Terminal voltage=VOUT1, 0V
I2Cserial interface
Input H Level (SCL, SDA)
VIH
0.75×
VDVDD
-
0.3+
VDVDD
V
Input L Level (SCL, SDA)
VIL
-0.3
-
0.25×
VDVDD
V
Input Leak Current (SCL, SDA)
ILK
-1
0
1
µA
Terminal voltage=VDVDD, 0V
Output L Level (SDA)
VOL
-0.3
-
0.4
V
ISOURCE= 6mA
(Note2)：These are guaranteed by design engineering from -35℃ to 85℃.
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TSZ22111・15・001
BD7602GUL
Characteristic Data(Reference Data)
0
5
10
15
20
25
30
35
40
45
50
-50 050 100
Circuit Current : ICCVBAT[uA]
Temp : Ta[℃]
0
5
10
15
20
25
30
35
40
45
50
0246
Circuit Current : ICCVBAT[μA]
Input Voltage : VBAT[V]
Figure 4. Circuit Current VS temperature Figure 5. Input Current VS Input Voltage
(VBAT=3.6V,Ta=-35℃~85℃) (VBAT=0V~5.5V,Ta=25℃)
0
1
2
3
4
0 2 4 6
Output Voltage : VOUT1「Ｖ］
Input Voltage : VBAT[V]
Io=1mA
Io=30mA
Io=50mA
Io=100mA
0
1
2
3
4
0 2 4 6
Output Voltage : VOUT2[V]
Input Voltage : VBAT[V]
Io=1mA
Io=30mA
Io=50mA
Io=100mA
Figure 6. Output Voltage VS Input Voltage Figure 7. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃) (VBAT=0V~5.5V,Ta=25℃,Vout=2.8V)
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TSZ22111・15・001
BD7602GUL
Characteristic Data(Reference Data) -continuance
0
1
2
3
4
0 2 4 6
Output Voltage : VOUT2[V]
Input Voltage : VBAT[V]
Io=1mA
Io=30mA
Io=50mA
Io=100mA
VOUT2=2.9V
0
1
2
3
4
0 2 4 6
Output Voltage : VOUT2[V]
Input Voltage : VBAT[V]
Io=1mA
Io=30mA
Io=50mA
Io=100mA
VOUT2=2.95V
Figure 8. Output Voltage VS Input Voltage Figure 9. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃,Vout=2.9V) (VBAT=0V~5.5V,Ta=25℃,Vout=2.95V)
0
1
2
3
4
0 2 4 6
Output VOltage : VOUT2[V]
Input Voltage : VBAT[V]
Io=1mA
Io=30mA
Io=50mA
Io=100mA
VOUT2=3.0V
0
1
2
3
4
0 2 4 6
Output Voltage : VOUT2[V]
Input Voltage : VBAT[V]
Io=1mA
Io=30mA
Io=50mA
Io=100mA
VOUT2=3.05V
Figure 10. Output Voltage VS Input Voltage Figure 11. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃,Vout=3.0V) (VBAT=0V~5.5V,Ta=25℃,Vout=3.05V)
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TSZ22111・15・001
BD7602GUL
Characteristic Data(Reference Data) -continuance
0
1
2
3
4
0 2 4 6
Output Voltaqge : VOUT2[V]
Input Voltage : VBAT[V]
Io=1mA
Io=30mA
Io=50mA
Io=100mA
VOUT2=3.1V
0
1
2
3
4
0 2 4 6
Output Voltage : VOUT2[V]
Input Voltage : VBAT[V]
Io=1mA
Io=30mA
Io=50mA
Io=100mA
VOUT2=3.2V
Figure 12. Output Voltage VS Input Voltage Figure 13. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃,Vout=3.1V) (VBAT=0V~5.5V,Ta=25℃,Vout=3.2V)
0
1
2
3
4
0 2 4 6
Output Voltage : VOUT2[V]
Input Volatage : VBAT[V]
Io=1mA
Io=30mA
Io=50mA
Io=100mA
VOUT2=3.3V
Figure 14. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃,Vout=3.3V)
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25.Feb.2014 Rev.001
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TSZ22111・15・001
BD7602GUL
Characteristic Data(Reference Data) -continuance
2.8
2.9
3
3.1
3.2
-50 050 100
Output Voltage : VOUT1[V]
Temp : Ta[℃]
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
-50 050 100
Output Voltage : VOUT2[V]
Temp : Ta[℃]
VOUT2=3.3V
VOUT2=3.2V
VOUT2=3.1V
VOUT2=3.05V
VOUT2=3.0V
VOUT2=2.95V
VOUT2=2.9V
VOUT2=2.8V
Figure 15. Output Voltage VS Temperature Figure 16. Output Voltage VS Temperature
(VBAT=3.6V,Ta=25℃,Io=1mA) (VBAT=3.6V,Ta=25℃,Io=1mA)
0
50
100
150
200
250
300
01234
Output Current : IOUT1MAX[mA]
VOUT1 Voltage : VOUT1[V]
VBAT=3.1V
VBAT=3.3V
VBAT=3.6V
VBAT=3.9V
VBAT=5.5V
0
50
100
150
200
250
300
0 1 2 3 4
Output Current : IOUT2MAX[mA]
VOUT2 Voltage : VOUT2[V]
VBAT=3.1V
VBAT=3.3V
VBAT=3.6V
VBAT=3.9V
VBAT=5.5V
Figure 17. Output Current VS VOUT1 Voltage Figure 18. Output Current VS VOUT2 Voltage
(VBAT=3.6V,Ta=25℃) (VBAT=3.6V,Ta=25℃,VOUT2=3.0V)
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TSZ22111・15・001
BD7602GUL
Characteristic Data(Reference Data) -continuance
0
20
40
60
10 100 1000 10000 100000
Ripple Rejection : PSRR1[dB]
Frequency : fR[Hz]
Io=1mA
Io=50mA
Io=100mA
0
20
40
60
10 100 1000 10000 100000
Ripple Rejection : PSRR2[dB]
Frequency : fR[Hz]
Io=1mA
Io=50mA
Io=100mA
Figure 19. Ripple Rejection VS Frequency Figure 20. Ripple Rejection VS Frequency
(VBAT=4.2V+0.2Vpp,Cout=4.7μF,fR=120Hz,Ta=25℃) (VBAT=4.2V+0.2Vpp,Cout=4.7μF,fR=120Hz,Ta=25℃)
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TSZ22111・15・001
BD7602GUL
Characteristic Data(Reference Data) -continuance
Figure 21. VBAT Response(Rise) Figure 22. VBAT Response(Fall)
(VBAT=4V→5V,Cout=4.7μF,Ta=25℃,Tf=0.5μs) (VBAT=5V→4V,Cout=4.7μF,Ta=25℃,Tf=0.5μs)
Figure 23. VBAT Response(Rise) Figure 24. VBAT Response(Fall)
(VBAT=4V→5V,Cout=4.7μF,Ta=25℃,Tf=0.5μs) (VBAT=5V→4V,Cout=4.7μF,Ta=25℃,Tf=0.5μs)
VBAT:0.5V/Div
VOUT1:20mV/Div
⊿30.83mV
VBAT:0.5V/Div
VOUT1:20mV/Div
⊿104.17mV
VBAT:0.5V/Div
VOUT2:20mV/Div
⊿30.00mV
VBAT:0.5V/Div
VOUT2:20mV/Div
⊿112.50mV
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TSZ22111・15・001
BD7602GUL
Characteristic Data(Reference Data) -continuance
Figure 25. Load Response(Rise) Figure 26. Load Response(Fall)
(VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=1mA→10mA,Tr=0.5μs) (VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=10mA→1mA,Tf=0.5μs)
Figure 27. Load Response(Rise) Figure 28. Load Response(Fall)
(VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=1mA→10mA,Tr=0.5μs) (VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=10mA→1mA,Tf=0.5μs)
IVOUT1 5mA/Div
IVOUT2 5mA/Div
VOUT1 100mV/Div
VOUT1 100mV/Div
IVOUT1 5mA/Div
VOUT2 100mV/Div
IVOUT2 5mA/Div
VOUT2 100mV/Div
⊿36.00mV
⊿32.00mV
⊿32.00mV
⊿30.00mV
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TSZ02011-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
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TSZ22111・15・001
BD7602GUL
Characteristic Data(Reference Data) -continuance
Figure 29. Load Response(Rise) Figure 30. Load Response(Fall)
(VBAT=3.6V,Cout=4.7μTa=25℃,F,Iout=50mA→100mA,Tr=0.5μs) (VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=100mA→50mA,Tf=0.5μs)
Figure 31. Load Response(Rise) Figure 32. Load Response(Fall)
(VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=50mA→100mA,Tr=0.5μs) (VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=100mA→50mA,Tf=0.5μs)
IVOUT1 5mA/Div
IVOUT1 5mA/Div
VOUT1 100mV/Div
VOUT1 100mV/Div
⊿82mV
⊿78mV
IVOUT2 50mA/Div
VOUT2 100mV/Div
⊿82mV
IVOUT2 50mA/Div
VOUT2 100mV/Div
⊿80mV
15/22
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25.Feb.2014 Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
www.rohm.co.jp
TSZ22111・15・001
BD7602GUL
Characteristic Data(Reference Data) -continuance
Figure 33. Rush Current Figure 34. Rush Current
(VBAT=3.6V, LDO_EN=L→H ,Cout=4.7μF,Ta=25℃) (VBAT=3.6V,LDO_EN=L→H Cout=4.7μF,Ta=25℃)
0
0.5
1
1.5
2
2.5
3
3.5
2.5 2.7 2.9 3.1
Output Voltage : VOUT1[V]
Input Voltage : VBAT[V]
Figure 35. Output Voltage VS Input Voltage
(VBAT=3.6V,Ta=25℃)
VBAT 2.0V/Div
VOUT1 2.0V/Div
IVBAT 100A/Div
VBAT 2.0V/Div
VOUT2 2.0V/Div
IVBAT 100A/Div
152mA
164mA
16/22
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25.Feb.2014 Rev.001
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TSZ22111・15・001
BD7602GUL
Characteristic Data(Reference Data) -continuance
2.6
2.8
3
0 2 4
Output Voltage : VOHGPO[V]
Source Current : ISOURCEGPO[mA]
0
100
200
300
0 2 4
Output Voltage : VOLGPO[mV]
Sink Current : ISINKGPO[mA]
Figure 36. Output Voltage VS Source Current(CMOS Output) Figure 37. Output Voltage VS Sink Current(CMOS Output)
(VBAT=3.6V,Ta=25℃) (VBAT=3.6V,Ta=25℃)
0
100
200
300
0 2 4
Output Voltafe : VOLGPON[mV]
Sink Current : ISINKGPO[mA]
Figure 38. Output Voltage VS Sink Current(NMOS Output)
(VBAT=3.6V,Ta=25℃)
17/22
TSZ02011-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
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TSZ22111・15・001
BD7602GUL
I2C Interface Timing Specification
BD7602GUL has 2 line serial interface which supports I2C Bus protocol.
Table 1. I2C slave address
A7
A6
A5
A4
A3
A2
A1
R/W
0
0
1
1
1
1
0
1/0
Figure 39. I2C interface Timing
(Unless otherwise specified, VBAT=3.6V, VDVDD=1.8V, Ta=25°C)
Parameter
Symbol
MIN
TYP
MAX
UNIT
Condition
SCL Clock Frequency
fSCL
-
-
400
kHz
START Hold time
tHD:STA
0.6
-
-
µs
SCL of “L” time
tLOW
1.3
-
-
µs
SCL of “H” time
tHIGH
0.6
-
-
µs
Data input hold time
tHD:DAT
0.0
-
-
ns
Data input setup time
tSU:DAT
100
-
-
ns
STOP condition setup time
tSU:STO
0.6
-
-
µs
18/22
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25.Feb.2014 Rev.001
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TSZ22111・15・001
BD7602GUL
Register Map Table 2.Register Map
Address
Register
name
R/W
INIT
D7
D6
D5
D4
D3
D2
D1
D0
00h
ICREV
R
09h
-
-
DEVICE [2:0]
CHIPREV [2:0]
01h
LDOCNT
R/W
03h
-
-
-
-
-
LDO2_EN
LDO1_EN
02h
LDO2ADJ
R/W
03h
-
-
-
-
-
LDO2_VOUT [2:0]
03h
GPOCNT
R/W
00h
-
-
-
-
-
-
GPO_EN
REG_GPO
04h
GPOMODE
R/W
00h
-
-
-
-
-
-
Reserved
GPO_SEL
Register Detail
Address
Register
name
R/W
INIT
D7
D6
D5
D4
D3
D2
D1
D0
00h
ICREV
R
09h
-
-
DEVICE [2:0]
CHIPREV [2:0]
Bit[5:3]: DEVICE [2:0] DEVICE Name Notification
001: BD7602GUL (Initial Value)
Bit[2:0]: CHIPREV [2:0] CHIP Revision Notification
001: DS1 (Initial Value)
Address
Register
name
R/W
INIT
D7
D6
D5
D4
D3
D2
D1
D0
01h
LDOCNT
R/W
03h
-
-
-
-
-
-
LDO2_EN
LDO1_EN
Bit[1]: LDO2_EN LDO2 Output ON/OFF Control
0: OFF
1: ON (Initial Value)
Bit[0]: LDO1_EN LDO1 Output ON/OFF Control
0: OFF
1: ON (Initial Value)
Address
Register
name
R/W
INIT
D7
D6
D5
D4
D3
D2
D1
D0
02h
LDO2ADJ
R/W
03h
-
-
-
-
-
LDO2_VOUT [2:0]
Bit[2:0]: LDO2_VOUT [2:0] LDO2 Output Voltage set “
000: 2.80V
001: 2.90V
010: 2.95V
011: 3.00V (Initial Value)
100: 3.05V
101: 3.10V
110: 3.20V
111: 3.30V
Address
Register
name
R/W
INIT
D7
D6
D5
D4
D3
D2
D1
D0
03h
GPOCNT
R/W
00h
-
-
-
-
-
-
GPO_EN
REG_GPO
Bit[1]: GPO_EN GPO Enable/Disable Control
0: Disable (Hi-Z) (Initial Value)
1: Enable (Output Type and Output Voltage follow data of address 04h)
Bit[0]: REG_GPO GPO Output Control
0: Low Output (Initial Value)
1: High Output (CMOS Output), Hi-Z (NMOS Output)
Address
Register
name
R/W
INIT
D7
D6
D5
D4
D3
D2
D1
D0
04h
GPOMODE
R/W
00h
-
-
-
-
-
-
Reserved
GPO_SEL
Bit[1]: Reserved Reserved Register （no any function）
In case of writing address 04h, note to set this bit to “0”.
Bit[0]: GPO_SEL GPO Output Type
0: CMOS Output (Initial Value)
1: NMOS Output
19/22
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25.Feb.2014 Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
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TSZ22111・15・001
BD7602GUL
Timing Chart
Figure 40. Timing Chart
VREF
I2C Access
LDO1 Output
GPO Input
GPO Output
2.8V
2.3V (Reference)
2.7V
500µsec
W/R Disable W/R Operation W/R Disable
Write Data
Initial: Hi-Z Initial: Hi-Z
W/R Disable W/R Enable W/R Disable
VBAT(External input)
VBATUVLO(Internal signal)
DVDD(External input)
20/22
TSZ02011-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
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TSZ22111・15・001
BD7602GUL
Operational Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC‟s power
supply terminals.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3. Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4. Thermal Consideration
Should by any chance the power dissipation (Pd) rating be exceeded, the rise in temperature of the chip may result in
deterioration of its properties. The absolute maximum rating of the Pd stated in this specification is when the IC is
mounted on a 1.64mm x 1.64mm x 0.57mm glass epoxy board. In case the absolute maximum rating has been
exceeded, increase the board size and copper area to prevent exceeding the Pd rating.
5. Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.
6. Rush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may
flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring,
and routing of connections.
7. Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
8. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC‟s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
9. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
21/22
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25.Feb.2014 Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
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TSZ22111・15・001
BD7602GUL
Operational Notes – continued
10. Unused Input Terminals
Input terminals of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance
and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input terminals should be connected to
the power supply or ground line.
11. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Figure 41.Example of monolithic IC structure
12. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
13. Save Operating Range
When using this IC, set output transistor not to exceed absolute maximum range or ASO.
14. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be
within the IC‟s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn off all output pins. When the Tj falls below the
TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage
15. Over Current Protection circuit
Because output has an Over Current Protection (OCP) circuit that operates in accordance with the rated output
capacity, IC is protected from breakage or possible damage when the load becomes shorted. This protection circuit is
also effective in preventing damage to the IC in case of sudden and unexpected current surges only and not for its
continuous protection.
N N
P+PN N
P+
P Substrate
GND
NP+N N
P+
NP
P Substrate
GND GND
Parasitic
Elements
Pin A
Pin A
Pin B Pin B
B C
EParasitic
Elements
GND
Parasitic
Elements
CB
E
Transistor (NPN)Resistor
N Region
close-by
Parasitic
Elements
22/22
TSZ02011-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
www.rohm.co.jp
TSZ22111・15・001
BD7602GUL
Ordering Name information
B
D
7
6
0
2
G
U
L
-
E 2
Name of Product
Package
GUL: VCSP50L1C
Packing、forming specification
E2: reel type emboss taping
Package Dimensions
< Tape and Reel Information >
Tape
Embossed carrier tape
Quantity
3000pcs
Direction of feed
E2
The direction is the pin 1 of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
Reel
Direction of feed
1pin
1234
1234
1234
1234
1234
1234
Unit: mm
Datasheet
Datasheet
Notice - GE Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufac ture d for application in ordinar y el ec tronic eq uipments (such as AV equipment ,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred b y you or third parti es arising from the use of an y ROHM’s Prod ucts for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅢ CLASSⅡb CLASSⅢ
CLASSⅣ CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe d esign against the physical injur y, damage to any property, which
a failure or malfunction of our Products may cause. T he following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-produci ng comp onents, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flu x (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Pleas e verify and confirm characteristics of the final or mounted products i n usin g the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding nor mal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissip ation (Pd) depending o n Ambient temper ature (Ta). When us ed in se aled area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specifi ed range described in the product specification.
9. ROHM shall not be in any way responsible or liable for fai lure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active hal ogen ous (chlori ne, bromine, etc.) flu x is used, the residue of flux may negativel y affect product
performance and reliability.
2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specificati on
Datasheet
Datasheet
Notice - GE Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own indepe ndent verificati on and judgme nt in the use of such information
contained in this document. ROHM shall not be in an y way responsible or lia ble for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please t ake special care under dry con dition (e.g. Grounding of human body / equipment / sol der iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportati on
1. Product perfor m ance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solder ability of products out of recommended storage time peri od
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommen de d storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping o f a carton.
4. Use Products within the spec ified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products pl ease dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoi ng information or data will not infringe any int ellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2. No license, e x pressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including b ut not limited to, the developm ent of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
DatasheetDatasheet
Notice – WE Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Datasheet
Part Number bd7602gul
Package VCSP50L1C
Unit Quantity 3000
Minimum Package Quantity 3000
Packing Type Taping
Constitution Materials List inquiry
RoHS Yes
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