MIXA150R1200VA preliminary XPT IGBT Module VCES = 1200 V I C25 = 220 A VCE(sat) = 1.8 V Boost Chopper Part number MIXA150R1200VA Backside: isolated 6/7 1/2 9 10 4/5 Features / Advantages: Applications: Package: V1-A-Pack Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - low EMI - square RBSOA @ 3x Ic Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) SONICTM diode - fast and soft reverse recovery - low operating forward voltage AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Pumps, Fans Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 17 mm Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a MIXA150R1200VA preliminary Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = typ. 25C TC = 25C I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage I C = 150 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = I CES collector emitter leakage current VCE = VCES; VGE = 0 V 2.1 V 6.5 V 0.5 mA TVJ = 25C TVJ = 25C 1.8 VCE = 600 V; VGE = 15 V; IC = 150 A t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 5.9 TVJ = 125 C VGE = 15 V; R G = 4.7 short circuit duration VCE = 900 V; VGE = 15 V R G = 4.7 ; non-repetitive I SC short circuit current R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 470 nC 70 ns 40 ns 250 ns 100 ns 14 mJ 16 mJ TVJ = 125 C VCEmax = 1200 V t SC mA 1 500 600 V; IC = 150 A VCEmax = 1200 V V 2.1 5.4 TVJ = 25C VGE = 20 V short circuit safe operating area A A total gate charge I CM V W gate emitter leakage current SCSOA 30 220 150 Q G(on) VGE = 15 V; R G = 4.7 V 695 I GES VCE = 20 TC = 25C TVJ = 125 C inductive load Unit V TC = 80 C TVJ = 125 C 6 mA; VGE = VCE max. 1200 TVJ = 125 C 450 A 10 s A 600 0.18 K/W K/W 0.20 Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 190 A TC = 80 C 130 A TVJ = 25C 2.20 V 0.3 mA I F 80 VF forward voltage I F = 150 A IR reverse current VR = VRRM TVJ = 125C TVJ = 25C TVJ = 125C Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved VR = 600 V -di F /dt = 2500 A/s IF = 150 A; VGE = 0 V TVJ = 125C V 1.95 0.8 mA 20 C 175 A 350 ns 10 mJ 0.28 K/W 0.20 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20130906a MIXA150R1200VA preliminary Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 100 Unit A -40 125 C -40 150 C 2.5 Nm Weight MD 37 2 mounting torque d Spp/App d Spb/Apb VISOL mm 12.0 mm 3600 V 3000 V 50/60 Hz, RMS; IISOL 1 mA Date Code Location Part number M I X A 150 R 1200 VA yywwA Part Number (Typ) Lot No.: 2D Data Matrix Ordering Standard Part Number MIXA150R1200VA Equivalent Circuits for Simulation V0 6.0 terminal to backside t = 1 second t = 1 minute I terminal to terminal creepage distance on surface | striking distance through air isolation voltage R0 = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] Boost Chopper Reverse Voltage [V] V1-A-Pack Marking on Product MIXA150R1200VA Delivery Mode Box IGBT Diode threshold voltage 1.1 1.25 V R 0 max slope resistance * 9.2 5.7 m (c) 2013 IXYS all rights reserved Quantity 10 Code No. 511595 T VJ = 150 C * on die level V 0 max IXYS reserves the right to change limits, conditions and dimensions. g Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a MIXA150R1200VA preliminary Outlines V1-A-Pack 0,5 +0,2 15,8 1 0,25 3,3 0,5 2 0,25 17 13 R2 35 26 63 31,6 50 0,2 38,6 14 0,3 14 0,3 7 0,3 7 0,3 4x45 5 4 3 2 23,5 15 5,5 10 9 8 7 6 0,1 R R 5,5 11 0,3 11 0,3 1 R1 25,75 0,15 0,5 51,5 0,3 6/7 1/2 9 10 4/5 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a MIXA150R1200VA preliminary IGBT 300 300 VGE = 15 V 250 250 200 200 IC TVJ = 125C [A] 11 V 250 200 IC TVJ = 25C 150 300 13 V VGE = 15 V 17 V 19 V IC TVJ = 125C 150 [A] 9V 150 [A] 100 100 100 50 50 50 TVJ = 125C 0 0 0 1 2 3 0 0 1 VCE [V] Fig. 1 Typ. output characteristics 20 2 3 4 5 E 22 RG = 4.7 VCE = 600 V VGE = 15 V TVJ = 125C 18 E Eon Eoff 16 [mJ] 14 Eon 10 Eoff 5 0 Erec 12 0 0 100 200 300 400 500 600 10 0 QG [nC] Fig. 4 Typ. turn-on gate charge 10 11 12 13 IC = 150 A VCE = 600 V VGE = 15 V TVJ = 125C 20 20 [mJ] 15 5 9 Fig. 3 Typ. tranfer characteristics 10 [V] 8 Fig. 2 Typ. output characteristics 25 VGE 7 VGE [V] 30 15 6 VCE [V] 35 IC = 150 A VCE = 600 V TVJ = 25C 50 100 150 200 250 300 IC [A] Fig. 5 Typ. switching energy versus collector current 0 2 4 6 8 10 12 14 16 RG [ ] Fig. 6 Typ. switching energy versus gate resistance 1 ZthJC 0.1 [K/W] Ri 0.027 0.028 0.06 0.065 0.01 0.001 0.01 0.1 1 ti 0.002 0.03 0.03 0.08 10 t [s] Fig. 7 Typ. transient thermal impedance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a MIXA150R1200VA preliminary Diode 300 250 200 IC 150 [A] 100 TVJ = 125C 50 TVJ = 25C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCE [V] Fig. 2 Typ. reverse recovery charge Qrr versus di/dt Fig. 1 Typ. Forward current versus VF Fig. 3 Typ. peak reverse current IRM versus di/dt 11 10 TVJ = 125C 4.7 VR = 600 V Erec 9 [mJ] 8 15 7 27 6 1600 1800 2000 2200 2400 2600 diF /dt [A/s] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 6 Typ. recovery energy Erec versus -di/dt 1 ZthJC 0.1 [K/W] 0.01 0.001 Ri ti 0.054 0.002 0.05 0.03 0.096 0.03 0.08 0.08 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a