MIXA150R1200VA - Zilog - Datasheet.Live

MIXA150R1200VA

preliminary

Boost Chopper

XPT IGBT Module

4/5

1/2

9

10

6/7

Part number

MIXA150R1200VA

Backside: isolated

C25

CE(sat)

VV1.8

CES

220

1200

=

V= V

I= A

Features / Ad vantages: Applications: Package:

● Easy paralleling due to the positive temperature

coefficient of the on-state voltage

● Rugged XPT design (Xtreme light Punch Through)

results in:

- short circuit rated for 10 µsec.

- very low gate charge

- low EMI

- square RBSOA @ 3x Ic

● Thin wafer technology combined with the XPT design

results in a competitive low VCE(sat)

● SONIC™ diode

- fast and soft reverse recovery

- low operating forward voltage

● AC motor drives

● Solar inverter

● Medical equipment

● Uninterruptible power supply

● Air-conditioning systems

● Welding equipment

● Switched-mode and resonant-mode

power supplies

● Inductive heating, cookers

● Pumps, Fans

V1-A-Pack

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Height: 17 mm

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

● Isolation Voltage: V~

3600

IXYS reserves the right to change limits, conditions and dimensions. 20130906aData according to IEC 60747and per semiconductor unless otherwise specified

MIXA150R1200VA

preliminary

-di /dt = A/µs

T = °C

V

CES

V1200

collector emitter voltage

collector emitter saturation voltage

T = 25°C

collect or current A

220

A

C

VJ

Symbol Definition

Ratings

typ. max.min.Conditions Unit

150

V

CE(sat)

total power dissipation 695 W

collector emitter leakage current

6.5 V

turn-on delay time 70 ns

t

reverse bias safe operating area

A

V

GES

V±20

V

GEM

max. transient ga te emitte r vo l t a g e

T = °C

C

V

P

tot

gate emitter threshold voltage

RBSOA

450

±30

T = °C

VJ

V

max. DC gate voltage

I

C25

I

C

T = 25°C

VJ

I = A; V = 15 V

CGE

T = 25°C

VJ

V

GE(th)

I

CES

I = mA; V = V

CGECE

V = V ; V = 0 V

CE CES GE

I

GES

T = 25°C

VJ

gate emitter leakage current V = ±20 V

GE

2.1

5.95.4

mA

1mA

0.5

500

G(on)

total gate charge V = V; V = 15 V; I = A

CE

Q

GE C

470 nC

t

E

d(on)

r

d(off)

f

on

off

40 ns

250 ns

100 ns

14 mJ

16 mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V = V; I = A

V = ±15 V; R = Ω

CE C

GE G

V = ±15 V; R = Ω

GE G

V = V

CEmax

1200

short circuit safe operating area

µs

SCSOA

10T = °C

VJ

V = V; V = ±15 V

CE GE

short circuit duration

t

short circuit current

I

SC

R = Ω; non-repetitive

G

600 A

R

thJC

thermal resistance junction to case 0.18 K/W

V

RRM

V1200

max. repetitive rev ers e voltage T = 25°C

VJ

T = 25°C

forward current A

190

A

C

130T = °C

C

I

F25

I

F

T = 25°C

forward voltage V

2.20

V

VJ

1.95T = 125°C

VJ

V

F

I = A

F

T = 25°C

reverse current mA

0.3

mA

VJ

0.8T = 125°C

VJ

I

RR RRM

T = 125°C

VJ

Q

I

t

rr

RM

rr

20 µC

175 A

350 ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

I = A; V = 0 V

F

FGE

E

rec

10 mJ

reverse recovery energy

R

thJC

thermal resistance junction to case 0.28 K/W

V = V

T = 25°C

C

T = 25°C

VJ

T = °C

VJ

150

6

150

4.7

600

900

2500

600

I

CM

1.8

R

thCH

thermal resistance case to heatsink K/W

R

thCH

thermal resistance case to heatsink K/W

IGBT

Diode

600 V

V = V

CEmax

1200

80

125

nA

0.20

IXYS reserves the right to change limits, conditions and dimensions. 20130906aData according to IEC 60747and per semiconductor unless otherwise specified

MIXA150R1200VA

preliminary

Ratings

Part Number (Typ)

yywwA

Date Code Location

Lot No.:

2D Data Matrix

I

X

M

A

150

R

1200

VA

Part number

IGBT

XPT IGBT

Gen 1 / std

Boost Chopper

V1-A-Pack

Module

=

Current Rating [A]

Reverse Voltage [V]

=

Package

T

VJ

°C

M

D

Nm2.5

mounting torque 2

T

stg

°C125

storage temperature -40

Weight g37

Symbol Definition typ. max.min.Conditions

virt ua l j un ctio n temp eratu re

Unit

VV

t = 1 second

V

t = 1 minute

isolation voltage

mm

6.0

12.0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current 100 A

per terminal

150-40

terminal to terminal

V

1-A-Pack

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

MIXA150R1200VA 511595Box 10MIXA150R1200VAStandard

3000

3600

ISOL

threshold voltage V

mΩ

V

0 max

R

0 max

slope resistance *

1.1

9.2

1.25

5.7

Equivalent Circuits for Simulation

T =

VJ

IV

0

R

0

IGBT Diode

150 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions. 20130906aData according to IEC 60747and per semiconductor unless otherwise specified

MIXA150R1200VA

preliminary

38

1

2

4

5

7

9

10

6

7

14

50

35

5,5

23,5

25,75

51,5

5,5

15

63

13

17

38,6

4x45°

R

R2

R1

±0,3

±0,2

±0,1

±0,15

0,5

R

0,25

±0,25

±0,3

7

±0,3

14

±0,3

11

±0,3±0,3

11

26

31,6

0,5

2

+0,2

3,3

±0,5

15,8

±1

4/5

1/2

9

10

6/7

Outlines V1-A-Pack

IXYS reserves the right to change limits, conditions and dimensions. 20130906aData according to IEC 60747and per semiconductor unless otherwise specified

MIXA150R1200VA

preliminary

0123

0

50

100

150

200

250

300

0 50 100 150 200 250 300

0

5

10

15

20

25

30

35

01234

0

50

100

150

200

250

300

V

CE

[V]

I

C

[A]

Q

G

[nC]

V

GE

[V]

9V

11 V

5 6 7 8 9 10 11 12 13

0

50

100

150

200

250

300

0 100 200 300 400 500 600

0

5

10

15

20

13 V

0 2 4 6 8 10 12 14 16

10

12

14

16

18

20

22

E

[mJ]

E

off

Fig. 1 Typ. output characteristics

V

CE

[V]

I

C

[A]

V

GE

=15V

17 V

19 V

Fig. 2 Typ. output characteristics

I

C

[A]

Fig. 3 Typ. tranfer characteristics

V

GE

[V]

Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy

versus collector current

E

on

Fig. 6 Typ. switching energy

versus gate resistance

R

G

[]

E

[mJ]

I

C

[A]

V

GE

=15V

T

VJ

= 25°C

T

VJ

= 125°C

T

VJ

= 25°C

T

VJ

=125°C

I

C

=150A

V

CE

=600V

R

G

=4.7

V

CE

= 600 V

V

GE

= ±15 V

T

VJ

= 125°C

I

C

=150A

V

CE

= 600 V

V

GE

= ±15 V

T

VJ

= 125°C

E

on

E

off

E

rec

T

VJ

= 125°C

Fig. 7 Typ. transient thermal impedance

0.001 0.01 0.1 1 10

0.01

0.1

1

Z

thJC

[K/W]

t[s]

R

i

t

i

0.027 0.002

0.028 0.03

0.06 0.03

0.065 0.08

IGBT

IXYS reserves the right to change limits, conditions and dimensions. 20130906aData according to IEC 60747and per semiconductor unless otherwise specified

MIXA150R1200VA

preliminary

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

50

100

150

200

250

300

I

C

[A]

V

CE

[V]

T

VJ

= 25°C

T

VJ

=125°C

1600 1800 2000 2200 2400 2600

6

7

8

9

10

11

di

F

/dt [A/μs]

E

rec

[mJ]

T

VJ

= 125°C

V

R

= 600 V

27

15

4.7

Fig. 1 Typ. Forward current

versus V

F

Fig. 2 Typ. reverse recovery

charge Q

rr

versus di/dt

Fig. 3 Typ. peak reverse current

I

RM

versus di/dt

Fig. 4 Dynamic parameters

Q

r

,I

RM

versus T

VJ

Fig. 5 Typ. recovery time

t

rr

versus -di

F

/dt

Fig. 6 Typ. recovery energy

E

rec

versus -di/dt

Fig. 7 Transient thermal impedance junction to case

0.001 0.01 0.1 1 10

0.01

0.1

1

Z

thJC

[K/W]

t[s]

R

i

t

i

0.054 0.002

0.05 0.03

0.096 0.03

0.08 0.08

Diode

IXYS reserves the right to change limits, conditions and dimensions. 20130906aData according to IEC 60747and per semiconductor unless otherwise specified