For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 1
HMC816LP4E
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
v00.1108
General Description
Features
Functional Diagram
Typical Applications
Electrical Specications, TA = +25° C,
Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2
The HMC816LP4E is a GaAs pHEMT Dual Channel
Low Noise Amplier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 230 and 660 MHz. The amplier
has been optimized to provide 0.5 dB noise gure,
22 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC816LP4E shares
the same package and pinout with the HMC817-
LP4E & HMC818LP4E LNAs. The HMC817LP4E can
be biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the LNA for each application.
Low Noise Figure: 0.5 dB
High Gain: 22 dB
High Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
24 Lead 4x4mm QFN Package: 16 mm2
The HMC816LP4E is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Multi-Channel Applications
Parameter Vdd = +3V Vdd = +5V Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range 230 - 450 450 - 660 230 - 450 450 - 660 MHz
Gain 17 21 14 17 19 22 15 19 dB
Gain Variation Over Temperature 0.001 0.002 0.005 0.007 dB/ °C
Noise Figure 0.5 0.9 0.5 0.9 0.5 0.9 0.5 0.9 dB
Input Return Loss 13 17 15 16 dB
Output Return Loss 12 10 13 10 dB
Output Power for 1 dB
Compression (P1dB) 10 14 13 16 15 19 18 21 dBm
Saturated Output Power (Psat) 10 15 14 16.5 16 20 18 21 dBm
Output Third Order Intercept (IP3) 26 28 34 37 dBm
Supply Current (Idd) 24 34 44 24 34 44 68 97 126 68 97 126 mA
* Rbias sets current, see application circuit herein
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 2
Input Return Loss vs. Temperature [1]
Output Return Loss vs. Temperature [1]
Broadband Gain & Return Loss
HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
[1] Vdd = 5V [2] Vdd = 3V
Gain vs. Temperature [2]
Gain vs. Temperature [1]
Reverse Isolation vs. Temperature [1]
-25
-20
-15
-10
-5
0
5
10
15
20
25
0.2 0.4 0.6 0.8 1 1.2 1.4
Vdd= 5V
Vdd= 3V
RESPONSE (dB)
FREQUENCY (GHz)
S21
S22
S11 14
16
18
20
22
24
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
14
16
18
20
22
24
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25C
+85C
- 40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25C
+85C
- 40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25C
+85C
- 40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 3
P1dB vs. Temperature
Psat vs. Temperature
HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Output IP3 and Supply Current vs.
Supply Voltage @ 400 MHz
[1] Measurement reference plane shown on evaluation PCB drawing.
Output IP3 vs. Temperature
Noise Figure vs. Temperature [1]
Output IP3 and Supply Current vs.
Supply Voltage @ 500 MHz
0
0.2
0.4
0.6
0.8
1
0.2 0.3 0.4 0.5 0.6 0.7
Vdd=5V
Vdd=3V
NOISE FIGURE (dB)
FREQUENCY (GHz)
+85C
+25 C
-40C
10
12
14
16
18
20
22
24
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25 C
+85 C
- 40 C
P1dB (dBm)
FREQUENCY (GHz)
Vdd=3V
Vdd=5V
10
12
14
16
18
20
22
24
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25 C
+85 C
- 40 C
Psat (dBm)
FREQUENCY (GHz)
Vdd=3V
Vdd=5V
20
25
30
35
40
45
0.2 0.3 0.4 0.5 0.6 0.7
+25 C
+85 C
- 40 C
IP3 (dBm)
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
22
24
26
28
30
32
34
36
38
0
18
36
54
72
90
108
126
144
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
22
25
28
31
34
37
40
43
0
20
40
60
80
100
120
140
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 4
Power Compression @ 500 MHz [1]
HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Power Compression @ 500 MHz [2]
Power Compression @ 400 MHz [1] Power Compression @ 400 MHz [2]
[1] Vdd = 5V [2] Vdd = 3V
Gain, Power & Noise Figure
vs. Supply Voltage @ 400 MHz
Gain, Power & Noise Figure
vs. Supply Voltage @ 500 MHz
14
16
18
20
22
24
0
0.2
0.4
0.6
0.8
1
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
Gain
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY VOLTAGE (V)
14
16
18
20
22
24
0
0.2
0.4
0.6
0.8
1
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
Gain
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY VOLTAGE (V)
0
5
10
15
20
25
30
35
40
45
-18 -16 -14 -12 -10 -8 -6 -4 -2 0 2
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
40
45
-18 -16 -14 -12 -10 -8 -6 -4 -2
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
40
45
-18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
40
45
50
-18 -16 -14 -12 -10 -8 -6 -4 -2 0 2
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 5
HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Cross Channel Isolation [1]
Output IP3 vs. Rbias @ 400 MHz
Magnitude Balance [1]
Output IP3 vs. Rbias @ 500 MHz
Phase Balance [1]
[1] Vdd = 5V
-1
-0.5
0
0.5
1
0.2 0.3 0.4 0.5 0.6 0.7
AMPLITUDE BALANCE (dB)
FREQUENCY (GHz)
22
24
26
28
30
32
34
36
38
40
1000 10000
Vdd= 3V
Vdd= 5V
IP3 (dBm)
Rbias (Ohms)
500
-40
-30
-20
-10
0
0.2 0.3 0.4 0.5 0.6 0.7
RFIN1 TO RFOUT2
RFIN2 TO RFOUT1
ISOLATION (dB)
FREQUENCY (GHz)
22
24
26
28
30
32
34
36
38
40
1000 10000
Vdd= 3V
Vdd= 5V
IP3 (dBm)
Rbias (Ohms)
500
-2
-1
0
1
2
0.2 0.3 0.4 0.5 0.6 0.7
PHASE BALANCE (degrees)
FREQUENCY (GHz)
Absolute Bias Register for Idd
Range & Recommended Bias Resistor
Vdd (V) Rbias Ω Idd (mA)
Min Max Recommended
3V 4.7k Open
circuit 10k 34
5V 0 Open
circuit
820 65
2k 80
3.92k 90
10k 97
With Vdd = 3V Rbias <4.7k is not recommended and may result in
LNA becoming conditionally unstable.
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 6
HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply
Current vs. Vdd (Rbias = 10kΩ)
Drain Bias Voltage (Vdd1, Vdd2) +6 V
RF Input Power (RFIN1, RFIN2)
(Vdd = +5 Vdc) +10 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 17.86 mW/°C above 85 °C) 1.16 W
Thermal Resistance
(channel to ground paddle) 56 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Vdd1, Vdd2 (V) Idd1, Idd2 (mA)
2.7 24
3.0 34
3.3 44
4.5 82
5.0 97
5.5 110
Note: Amplier will operate over full voltage range shown above.
Outline Drawing
Part Number Package Body Material Lead Finish MSL Rating Package Marking [1]
HMC816LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H816
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reow temperature of 260 °C
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 7
HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Pin Number Function Description Interface Schematic
1, 6 RFIN1, RFIN2 This pins are DC coupled. An off-chip DC blocking capacitor is required.
2, 5, 7, 12, 14,
17, 19, 24 GND These pins and package bottom must be connected to RF/DC ground.
3, 4, 8 - 10,
21 - 23 N/C No connection required. These pins may be connected
to RF/DC ground without affecting performance.
18, 13 RFOUT1,
RFOUT2 These pins are matched to 50 Ohms.
15, 16 RES1, RES2 These pins are used to set the DC current of each amplier via external
bias resistor. See application circuit.
20, 11 Vdd1, Vdd2 Power Supply Voltages for each amplier. Choke inductor and bypass
capacitors are required. See application circuit.
Pin Descriptions
Application Circuit
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 8
HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Evaluation PCB
Item Description
J1 - J4 PCB Mount SMA RF Connector
J5, J6 2mm Vertical Molex 8pos Connector
C1, C2 100 pF Capacitor, 0402 Pkg.
C5, C6 1000 pF Capacitor, 0603 Pkg.
C9, C10 0.47 µF Capacitor, 0402 Pkg.
C11, C12 10k pF Capacitor, 0402 Pkg.
R3, R4 0 Ohm Resistor, 0402 Pkg.
R5, R6 (Rbias1,2) 10k Ohm Resistor, 0402 Pkg.
L1, L2 51 nH Inductor, 0402 Pkg.
L3, L4 47 nH Inductor, 0603 Pkg.
U1 HMC816LP4E Amplier
PCB [2] 122725 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
List of Materials for Evaluation PCB 123191 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
