APTM10AM05FT - Advanced Power Technology

APTM10AM05FT

APTM10AM05FT– Rev 0 May, 2005

APT website

–

http:/

www.advancedpower.com 1 - 6

VBUS NTC2

OUT

0/VBUS NTC1

NTC 2

OUT

VBUS

NTC 1

S1 S2

0/VBUS

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

ymbol Parameter Ma

ratings Unit

VDSS Drain - Source Breakdown Voltage 100 V

Tc = 25°C 278

ID Continuous Drain Current Tc = 80°C 207

IDM Pulsed Drain current 1100

VGS Gate - Source Voltage ±30 V

RDSon Drain - Source ON Resistance 5 mΩ

PD Maximum Power Dissipation Tc = 25°C 780 W

IAR Avalanche current (repetitive and non repetitive) 100 A

EAR Repetitive Avalanche Energy 50

EAS Single Pulse Avalanche Energy 3000 mJ

VDSS = 100V

RDSon = 4.5mΩ typ @ Tj = 25°C

ID = 278A @ Tc = 25°C

Applicatio

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Motor control

Features

• Power MOS V® FREDFETs

- Low RDSon

- Low input and Miller capacitance

- Low gate charge

- Fast intrinsic reverse diode

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symmetrical design

- Lead frames for power connections

• Internal thermistor for temperature monitoring

• High level of integration

Benefits

• Outstandi ng perfor mance at hi gh freque nc y operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for

easy PCB mounting

• Low profile

hase leg

MOSFET Power Module

APTM10AM05FT

APTM10AM05FT– Rev 0 May, 2005

APT website

–

http:/

www.advancedpower.com 2 - 6

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

VGS = 0V,VDS = 100V Tj = 25°C 200

IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 80V Tj = 125°C 1000

µA

RDS(on) Drain – Source on Resistance VGS = 10V, ID = 125A 4.5 5

mΩ

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 2 4 V

IGS S Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Cis s Input Capacitance 20

Coss Output Capacitance 8

Crss Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1MHz 2.9

Qg Total gate Charge 700

Qgs Gate – Source Charge 120

Qgd Gate – Drain Charge

VGS = 10V

VBus = 50V

ID = 250A 360

Td(on) Tur n-o n Delay Ti me 80

Tr Rise Time 165

Td(off) Turn-off Delay Time 280

Tf Fall Time

Resistive Switching

VGS = 15V

VBus = 66V

ID = 250A

RG = 2.5 Ω 135

Eon Tur n-o n Switchi ng Energy X 1.1

Eoff Turn-off Switching Energy Y

Inductive switching @ 25°C

VGS = 15V, VBus = 66V

ID = 250A, RG =2.5Ω 1.2 mJ

Eon Tur n-o n Switchi ng Energy X 1.22

Eoff Turn-off Switching Energy Y

Inductive switching @ 125°C

VGS = 15V, VBus = 66V

ID = 250A, RG = 2.5Ω 1.28 mJ

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tc = 25°C 278 IS Continuous So urce current

(Body diode)

Tc = 80°C 207 A

VSD Diode Forward Voltage VGS = 0V, IS = - 250A 1.3 V

dv/dt Peak Diode Recovery Z 5 V/ns

Tj = 25°C 190

trr Reverse Recovery Time

IS = - 250A

VR = 50V

diS/dt = 200A/µs Tj = 125°C 370 ns

Tj = 25°C 0.8

Qrr Reverse Recovery Charge

IS = - 250A

VR = 50V

diS/dt = 200A/µs Tj = 125°C 3.4

µC

X Eon includes diode reverse recovery.

Y In accordance with JEDEC standard JESD24-1.

Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.

IS ≤ - 278A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C

APTM10AM05FT

APTM10AM05FT– Rev 0 May, 2005

APT website

–

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Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

RthJC Junction to Case 0.16 °C/W

VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V

TJ Operating junction temperature range -40 150

TSTG Storage Temperature Range -40 125

TC Operating Case Temperature -40 100

°C

Torque Mounting torque To Heatsink M5 1.5 4.7 N.m

Wt Package Weight 160 g

Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).

Symbol Characteristic Min Typ Max Unit

R25 Resistance @ 25°C 50 kΩ

B 25/85 T

25 = 298.15 K 3952 K























−

exp

85/25

Package outline (dimensions in mm)

T: Thermistor temperature

RT: Thermistor value at T

APTM10AM05FT

APTM10AM05FT– Rev 0 May, 2005

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–

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Typical Performance Curve

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.00001 0.0001 0.001 0.01 0.1 1 10

rectangular Pulse Duration (Seconds)

Thermal Impedance (°C/W)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

200

400

600

800

1000

1200

0 4 8 1216202428

VDS , Drain to Source Voltage (V)

ID, Drain Current (A)

Low Voltage Output Characteristics

VGS=15V, 10V & 9V

Transfert Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

120

160

200

240

01234567

VGS, Gate to Source Voltage (V)

ID, Drain Current (A)

VDS > ID(on)xRDS(on)MAX

250µs pulse test @ < 0.5 duty cycle

RDS (on) vs Drain Current

VGS=10V

VGS=20 V

0.8

0.9

1.1

1.2

0 25 50 75 100 125 150 175 200

ID, Drain Current (A)

RDS(on) Drain to Source ON Resistance

Normalized to

VGS=10V @ 125A

100

150

200

250

300

25 50 75 100 125 150

TC, Case Temperature (°C)

ID, DC Drain Current (A)

DC Drain Current vs Case Temperature

APTM10AM05FT

APTM10AM05FT– Rev 0 May, 2005

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–

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0.90

0.95

1.00

1.05

1.10

1.15

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature (°C)

BVDSS

, Drain to Source Breakdown

Volta

(

Normalized

)

Breakdown Voltage vs Temperature ON resistance vs Temperature

0.0

0.5

1.0

1.5

2.0

2.5

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature (°C)

RDS(on), Drain to Source ON resistance

(Normalized)

VGS=10V

ID= 125A

Threshold Voltage vs Temperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

-50 -25 0 25 50 75 100 125 150

TC, Case Temperature (°C)

VGS(TH), Threshold Voltage

(Normalized)

Maximum Safe Operating Area

10ms

1ms

100µs

100

1000

110100

VDS, Drain to Source Voltage (V)

ID, Drain Current (A)

Single pulse

TJ=150°C

limited by

RDSon

Ciss

Crss

Coss

1000

10000

100000

0 1020304050

VDS, Drain to Source Voltage (V)

C, Capacitance (pF)

Capacitance vs Drain to Source Voltage

VDS =20V

VDS=50V

VDS =80V

0 200 400 600 800 1000

Gate Charge (nC)

VGS, Gate to Source Voltage (V)

Gate Charge vs Gate to Source Voltage

ID=250A

TJ=25°C

APTM10AM05FT

APTM10AM05FT– Rev 0 May, 2005

APT website

–

http:/

www.advancedpower.com 6 - 6

Delay Times vs Current

td(on)

td(off)

100

150

200

250

300

350

0 100 200 300 400

ID, Drain Current (A)

td(on) and td(off) (ns)

VDS=66V

RG=2.5Ω

TJ=125°C

L=100µH

Rise and Fall times vs Current

100

150

200

250

0 100 200 300 400

ID, Drain Current (A)

tr and tf (ns)

VDS=66V

RG=2.5Ω

TJ=125°C

L=100µH

Switching Energy vs Current

Eon

Eoff

0.5

1.5

2.5

0 100 200 300 400

ID, Drain Current (A)

Eon and Eoff (mJ)

VDS=66V

RG=2.5Ω

TJ=125°C

L=100µH

Eon

Eoff

0 5 10 15 20 25 30

Gate Resistance (Ohms)

Switching Energy (mJ)

Switching Energy vs Gate Resistance

VDS =66V

ID=200A

TJ=125°C

L=100µH

Hard

switching ZVS

ZCS

100

50 100 150 200 250

ID, Drain Current (A)

Frequency (kHz)

Operating Frequency vs Drain Curren

VDS=66V

D=50%

RG=2.5Ω

TJ=125°C

TC=75°C

TJ=25°C

TJ=150°C

100

1000

0.3 0.5 0.7 0.9 1.1 1.3 1.5

VSD

, Source to Drain Voltage (V)

IDR, Reverse Drain Current (A)

Source to Drain Diode Forward Voltage

APT res erves the right to cha nge , wit ho ut not ice, the s pe cificatio ns and info rma tio n co ntai ne d he re in

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522