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AMPLIFIERS - LINEAR & POWER - CHIP
1
HMC7149
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10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
Functional Diagram
Features
Typical Applications
General Description
The HMC7149 is ideal for:
• Test Instrumentation
• General Communications
• Radar
High Psat: +40 dBm
Power Gain at Psat: +10 dB
High Output IP3: +39.5 dBm
Small Signal Gain: 20 dB
Supply Voltage: +28 V @ 680 mA
50 Ohm Matched Input/Output
Die Size: 3.4 x 4.5 x 0.1 mm
The HMC7149 is an 10W Gallium Nitride (GaN) MMIC
Power Amplier which operates between 6 and 18
GHz. The amplier typically provides 20dB of small
signal gain, +40 dBm of saturated output power, and
+39.5 dBm output IP3 at +28 dBm output power per
tone. The HMC7149 draws 680 mA current from
a +28V DC supply. The RF I/Os are matched to 50
Ohms for ease of integration into Multi-Chip-Modules
(MCMs). All electrical performance data was aquired
with the die eutectically attached to 1.02 mm (40 mil)
thick CuMo carrier with multiple 1.0 mil diameter ball
bonds connecting the die to 50 Ohm transmission
lines on alumina.
Parameter Min. Typ. Max. Min. Ty p. Max. Min. Ty p. Max. Min. Ty p. Max. Units
Frequency Range 6 - 10 10 - 14 14 - 16 16 - 18 GHz
Small Signal Gain 19 21 18 20 17 19 18 20 dB
Gain Flatness ±0.5 ±0.6 ±0.5 ±0.7 dB
Gain Variation Over Temperature 0.023 0.02 0.02 0.018 dB/ °C
Input Return Loss 17 17 16 11 dB
Output Return Loss 17 17 18 12dB
Output Power for 4 dB Compression
(P4dB) 35 35 35 36 dBm
Power Gain for 4 dB compression
(P4dB) 17 16 15 17 dB
Saturated Output Power (Psat) 40 40 40 40 dBm
Output Third Order Intercept (IP3) [2] 39.5 39 39.5 40.5 dBm
Power Added Efficiency 22 20 20 20 %
Supply Current (Idd @ Vdd = 28V) 680 680 680 680 mA
Electrical Specications, Tc = +25°C, Vdd= Vdd1 =Vdd2 = +28 V, Idd = 680 mA [1]
[1] Adjust Vgg between -3V and 0V to achieve Idd= 680 mA typical.
[2] Measurement taken at 28V @ 680 mA, Pout/tone = +28 dBm.
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
2
HMC7149
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
Gain and Return Loss
Gain vs. Temperature
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
Pout vs. Frequency
Gain vs. Vdd
15
20
25
30
35
40
45
6 8 10 12 14 16 18
P4dB Psat
Pout (dBm)
FREQUENCY (GHz)
-40
-30
-20
-10
0
10
20
30
4 6 8 10 12 14 16 18 20
S21 S11 S22
Response (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
6 8 10 12 14 16 18
+25C +85C -40C
GAIN (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
6 8 10 12 14 16 18
24V 28V 32V
Gain (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
6 8 10 12 14 16 18
+25C +85C -40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
6 8 10 12 14 16 18
+25C +85C -40C
RETURN LOSS (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
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AMPLIFIERS - LINEAR & POWER - CHIP
3
HMC7149
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
P4dB vs. Temperature
Psat vs. Temperature
P4dB vs. Supply Voltage
Psat vs. Supply Voltage
P4dB vs. Supply Current
Psat vs. Supply Curent
25
30
35
40
45
6 8 10 12 14 16 18
+25C +85C -40C
P4dB (dBm)
FREQUENCY (GHz)
25
30
35
40
45
6 8 10 12 14 16 18
24V 28V 32V
P4dB (dBm)
FREQUENCY (GHz)
30
35
40
45
50
6 8 10 12 14 16 18
+25C +85C -40C
Psat (dBm)
FREQUENCY (GHz)
30
35
40
45
50
6 8 10 12 14 16 18
24V 28V 32V
Psat (dBm)
FREQUENCY (GHz)
25
30
35
40
45
6 8 10 12 14 16 18
340 mA 680 mA 1360 mA
P4dB (dBm)
FREQUENCY (GHz)
30
35
40
45
50
6 8 10 12 14 16 18
340 mA 680 mA 1360 mA
Psat (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
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AMPLIFIERS - LINEAR & POWER - CHIP
4
HMC7149
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
Power Gain vs. Frequency
Output IP3 vs. Temperature
Pout/tone = +28 dBm
Output IM3 @ Vdd= +24V
Output IP3 vs. Supply Voltage
Pout/tone = +28 dBm
Output IP3 vs. Supply Current
Pout/tone = +28 dBm
Output IM3 @ Vdd= +28V
0
5
10
15
20
25
30
6 8 10 12 14 16 18
P4dBm Psat
POWER GAIN (dB)
FREQUENCY (GHz)
33
35
37
39
41
43
6 8 10 12 14 16 18
24V 28V 32V
FREQUENCY (GHz)
IP3 (dBm)
32
34
36
38
40
42
44
46
48
6 8 10 12 14 16 18
340 mA 680 mA 1360 mA
FREQUENCY (GHz)
IP3 (dBm)
10
20
30
40
50
20 22 24 26 28 30 32
6 GHz
8 GHz
10 GHz
12 GHz
14 GHz
16 GHz
18 GHz
Pout/tone(dBm)
IM3 (dBc)
10
20
30
40
50
20 22 24 26 28 30 32
6 GHz
8 GHz
10 GHz
12 GHz
14 GHz
16 GHz
18 GHz
Pout/TONE (dBm)
IM3 (dBc)
33
35
37
39
41
43
6 8 10 12 14 16 18
+25 C +85 C -40 C
FREQUENCY (GHz)
IP3 (dBm)
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
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AMPLIFIERS - LINEAR & POWER - CHIP
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HMC7149
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
Output IM3 @ Vdd= +32V
Power Compression @ 6 GHz
Power Compression @ 12 GHz
Power Compression @ 18 GHz
Gain and Power vs.
Supply Voltage @ 12 GHz
Gain and Power vs.
Supply Curent @ 12 GHz
0
5
10
15
20
25
30
35
40
45
50
0
225
450
675
900
1125
1350
1575
1800
2025
2250
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
Idd
Pout Gain PAE
Pout(dBm), GAIN(dB), PAE(%)
Idd (mA)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
40
45
50
0
225
450
675
900
1125
1350
1575
1800
2025
2250
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Idd
Pout Gain PAE
Pout(dBm), GAIN(dB), PAE(%)
Idd (mA)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
40
45
50
0
225
450
675
900
1125
1350
1575
1800
2025
2250
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
Idd
Pout Gain PAE
Pout(dBm), GAIN(dB), PAE(%)
Idd (mA)
INPUT POWER (dBm)
15
20
25
30
35
40
45
24 26 28 30 32
P4dB(dBm) Psat(dBm) Gain(dB)
Vdd (V)
P4dB (dBm), Psat (dBm), Gain(dB)
15
20
25
30
35
40
45
340 510 680 850 1020 1190 1360
P4dB(dBm) Psat(dBm) Gain(dB)
Idd (mA)
P1dB (dBm), Psat (dBm), GAIN(dB)
10
20
30
40
50
20 22 24 26 28 30 32
6 GHz
8 GHz
10 GHz
12 GHz
14 GHz
16 GHz
18 GHz
Pout/TONE (dBm)
IM3 (dBc)
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
v
AMPLIFIERS - LINEAR & POWER - CHIP
6
HMC7149
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
Reverse Isolation vs. Temperature
Second Harmomonics vs. Supply Current
Second Harmomonics vs. Supply Voltage
Second Harmomonics vs. Pout
Power Dissipation
10
15
20
25
30
35
40
45
0 3 6 9 12 15 18 21 24 27 30
6 GHz
8 GHz
10 GHz
12 GHz
14 GHz
16 GHz
18 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
6 8 10 12 14 16 18
+25 C +85 C -40 C
FREQUENCY (GHz)
ISOLATION (dB)
0
10
20
30
40
50
60
70
6 8 10 12 14 16 18
24V 28V 32V
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
6 8 10 12 14 16 18
340 mA 680 mA 1360 mA
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
6 8 10 12 14 16 18
24 dBm
26 dBm
28 dBm
30 dBm
32 dBm
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
v
AMPLIFIERS - LINEAR & POWER - CHIP
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HMC7149
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
Outline Drawing
[1] Operation outside parameter ranges above can cause permanent damage to the device. These are maximum stress ratings
only. Continuous operation of the device at these conditions is not implied.
[2] Assumes 1mil AuSn die attach to a 40mil CuMo Carrier with 85°C at the back of the carrier.
[3] Restricted by maximum power dissipation
Drain Bias Voltage (Vdd) +32V
Gate Bias Voltage (Vgg) -8V to +0V
Maximum Forward Gate Current 6 mA
Maximum RF Input Power (RFIN) 30 dBm
Maximum Junction Temperature (Tj) 225 °C
Maximum Pdiss (T=85°C)
(Derate 357 mW/°C above 85°C) 50 W
Thermal Resistance [2]2.8 °C/W
Maximum VSWR [3] 6:1
Storage Temperature -55 to +150 °C
Operating Temperature -40 to +85 °C
Absolute Maximum Ratings[1]
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Vdd (V) Idd (mA)
+28.0 680
Typical Supply Current vs. Vdd
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
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AMPLIFIERS - LINEAR & POWER - CHIP
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HMC7149
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
1RFIN This pad is AC coupled and is matched to 50 Ohms.
External blocking capacitor is required.
2Vdd1 Drain Bias
3 RFOUT This pad is DC coupled and is matched to 50 Ohms.
External blocking capacitor is required.
4Vgg2 Gate Bias
5Vdd2 Drain Bias
6Vgg1 Gate Bias
Die Bottom GND Die bottom must be connected to RF/DC ground.
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
v
AMPLIFIERS - LINEAR & POWER - CHIP
9
HMC7149
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
Assembly Diagram
Application Circuit
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
v
AMPLIFIERS - LINEAR & POWER - CHIP
10
HMC7149
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
0.102mm (0.004”) Thick GaN MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
Mounting & Bonding Techniques for GaN MMICs
The die should be eutectically attached directly to the ground plane (see
HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the
chip (Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates
must be used, the die should be raised 0.150mm (6 mils) so that the
surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a
copper tungsten or CuMo heat spreader which is then attached to the
thermally conductive ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD
protective containers, and then sealed in an ESD protective bag for
shipment. Once the sealed ESD protective bag has been opened, all die
should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT
attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
Die placement: A heated vacuum collet (180°C) is the preferred method of pick up. Ensure that the area of vacuum
contact on the die is minimized to prevent cracking under differential pressure. All air bridges (if applicable) must be
avoided during placement. Minimize impact forces applied to the die during auto-placement.
Mounting
The chip is back-metallized with a minimum of 5 microns of gold and is the RF ground and thermal interface. It is
recommended that the chip be die mounted with AuSn eutectic preforms. The mounting surface should be clean
and at.
Eutectic Reow Process: An 80/20 gold tin 0.5mil (13um) thick preform is recommended with a work surface tem-
perature of 280°C. Limit exposure to temperatures above 300°C to 30 seconds maximum. A die bonder or furnace
with 95% N2 / 5% H2 reducing atmosphere should be used. No organic ux should be used. Coefficient of thermal
expansion matching is critical for long term reliability.
Die Attach Inspection: X-ray or acoustic scan is recommended.
Wire Bonding
Thermosonic ball or wedge bonding is the preferred interconnect technique. Gold wire must be used in a diameter
appropriate for the pad size and number of bonds applied. Force, time and ultrasonics are critical parameters: opti-
mize for a repeatable, high bond pull strength. Limit the die bond pad surface temperature to 200°C maximum.
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
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