FDD5614P 60V P-Channel PowerTrench(R) MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications. * -15 A, -60 V. RDS(ON) = 100 m @ VGS = -10 V Applications * Fast switching speed * DC/DC converter * High performance trench technology for extremely RDS(ON) = 130 m @ VGS = -4.5 V low RDS(ON) * Power management * Load switch * High power and current handling capability S D G G S TO-252 D Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter -60 V VGSS Gate-Source Voltage 20 V ID Drain Current -15 -45 A W - Continuous (Note 3) - Pulsed PD (Note 1a) Power Dissipation for Single Operation TJ, TSTG (Note 1) 42 (Note 1a) 3.8 (Note 1b) 1.6 Operating and Storage Junction Temperature Range -55 to +175 C Thermal Characteristics RJC Thermal Resistance, Junction-to-Case (Note 1) 3.5 C/W RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 C/W RJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5614P FDD5614P 13'' 12mm 2500 units (c)2005 Fairchild Semiconductor Corporation FDD5614P Rev C1(W) FDD5614P May 2005 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) WDSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = -30 V, ID = -4.5 A 90 mJ -4.5 A Off Characteristics VGS = 0 V, ID = -250 A -60 V BVDSS BVDSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = -48 V, VGS = 0 V -1 A IGSSF Gate-Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics ID = -250 A, Referenced to 25C -49 (Note 2) Gate Threshold Voltage VDS = VGS, ID = -250 A Gate Threshold Voltage Temperature Coefficient ID = -250 A, Referenced to 25C 4 RDS(on) Static Drain-Source On-Resistance 76 99 137 ID(on) On-State Drain Current VGS = -10 V, ID = -4.5 A ID = -3.9 A VGS = -4.5 V, VGS = -10 V,ID = -4.5 A,TJ=125C VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -3 A VDS = -30 V, f = 1.0 MHz V GS = 0 V, VGS(th) VGS(th) TJ mV/C -1 -1.6 -3 V mV/C 100 130 185 -20 m A 8 S 759 pF 90 pF 39 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = -30 V, VGS = -10 V, VDS = -30V, VGS = -10 V ID = -1 A, RGEN = 6 ID = -4.5 A, 7 14 ns 10 20 ns 19 34 ns 12 22 ns 15 24 nC 2.5 nC 3.0 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -3.2 A (Note 2) -0.8 -3.2 A -1.2 V FDD5614P Rev C1(W) FDD5614P Electrical Characteristics the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% PD RDS( ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD5614P Rev C1(W) FDD5614P Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of FDD5614P Typical Characteristics 1.8 15 12 -4.5V -4.0V -6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = -10V -3.5V 9 6 -3.0V 3 -2.5V VGS = -3.5V 1.6 -4.0V 1.4 -4.5V -5.0V 1.2 -6.0V -10V 1 0.8 0 0 1 2 3 4 0 5 2 4 Figure 1. On-Region Characteristics. 10 0.4 ID = -2.3 A ID = -4.5A VGS = -10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 0.3 0.2 TA = 125oC 0.1 TA = 25oC 0 175 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = -5V TA = -55oC IS, REVERSE DRAIN CURRENT (A) 15 ID, DRAIN CURRENT (A) 6 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) o 25 C 12 125oC 9 6 3 VGS = 0V 10 TA = 125oC 25oC 1 -55oC 0.1 0.01 0.001 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD5614P Rev C1(W) FDD5614P Typical Characteristics 1000 f = 1MHz VGS = 0 V ID = -4.5A 8 800 -30V VDS = -40V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 -20V 6 4 CISS 600 400 2 200 0 0 COSS CRSS 0 4 8 12 16 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 30 40 50 60 Figure 8. Capacitance Characteristics. 100 40 P(pk), PEAK TRANSIENT POWER (W) 100s 1ms 10ms RDS(ON) LIMIT 10 100ms 1s 1 10s DC VGS = -10V SINGLE PULSE RJA = 96oC/W 0.1 TA = 25oC 0.01 SINGLE PULSE RJA = 96C/W TA = 25C 30 20 10 0 0.1 1 10 100 0.1 1 -VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 96C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD5614P Rev C1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15